GB2387024A - Vcsel - Google Patents
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- GB2387024A GB2387024A GB0201753A GB0201753A GB2387024A GB 2387024 A GB2387024 A GB 2387024A GB 0201753 A GB0201753 A GB 0201753A GB 0201753 A GB0201753 A GB 0201753A GB 2387024 A GB2387024 A GB 2387024A
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- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
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- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
- H01S5/1085—Oblique facets
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
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- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
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- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
- H01S5/32366—(In)GaAs with small amount of N
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
Abstract
A vertical cavity surface emitting semiconductor laser (VCSEL) with a triangular or truncated triangular prism optical cavity resonator based on III-V and II-VI semiconductor compounds and their alloys is disclosed. The use of a triangular or truncated triangular prism optical cavity resonator with a high quality factor for vertical and lateral confinement of light allows both the advantages of usual VCSELs and lateral cavity triangular lasers. In an alternative embodiment a lateral emission can be redirected vertically by a mirror or grating (see figures 2 and 3).
Description
LASER DIODES
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to semiconductor laser diodes. More particularly, the invention relates to vertical cavity surface emitting semiconductor lasers (VCSELs).
2. Description of the Prior Art
Laterally emitting semiconductor laser diodes with various shapes of laser cavities, such as micro-disk, micro-arc-ring, triangular ridge, L- shape ridge, U-shape ridge and bow-tie lasers, are known. Recently, a laterally emitting semiconductor laser device with an equilateral- triangle resonance cavity composed of an ordinary laterally emitting laser device and a flat waveguide comprising a lower limit layer, an active region and an upper limit layer has been suggested (CN 1267106). Its advantages are simple structure, easy implementation, uniformly distributed light field in the equilateral-triangle optical cavity,
high directivity of laser radiation and small size.
However, a laterally emitting semiconductor laser device with an equilateral-triangle resonance cavity is not suitable for many applications, such as optical fibre communication, optical disk writing and reading heads and others based on a single VCSEL or a VCSEL array geometry.
Conventional VCSELs having cylindrical or square prism shaped vertical optical cavity resonators cannot provide total internal reflection conditions for lateral propagation of optical modes and, thus, have lower quality factors of their vertical optical cavities, resulting in higher threshold currents and a higher demand on mirror quality.
To overcome these disadvantages, the present invention provides a VCSEL (and arrays or matrixes of such VCSELs) having a vertical optical cavity resonator shaped as a triangular or truncated triangular prism.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a VCSEL with a higher quality factor of its vertical optical cavity resulting in a lower threshold current and lower demand on mirror quality compared to a conventional VCSEL having a cylindrical or square prism shaped vertical optical cavity resonator.
The present invention provides a VCSEL having a vertical optical cavity resonator shaped as a triangular or truncated triangular prism (T-VCSEL).
A general structure of a T-VCSEL according to an example of the invention is shown in Fig. 1. An active layer 1 of a T-VCSEL can be made of a III-V or II-VI semiconductor double heterostructure, a single quantum well, multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB--2 352 326.
An optical cavity 2 of the T-VCSEL is made of a heterostructure or double heterostructure or index-graded structure or another wave-guiding structure and upper and lower vertical mirrors 3 and 4 made of semiconductor superlattices or layered metal-
dielectric interference mirrors or layered dielectric-dielectric interference mirrors or any other high quality mirrors with a reflectivity higher then 95% for vertical light confinement and is a triangular or truncated triangular prism mesa structure 5 for lateral confinement of light.
Current is applied to the T-VCSEL via an upper semi-transparent metallic contact 6, linked to upper conducting mirror 3 through a contact layer 7, and a lower electrode 8, linked to lower conducting mirror 4 through a conducting substrate 9.
The current results in light generation in the active layer 1 and vertical light output 10 through semi-transparent metallic contact 6 The T-VCSEL can operate in single or multiple mode regimes depending on the quality of the mirrors and the lateral size of the triangular prism. The better the reflectivity of the
mirrors, the higher the lateral size of the triangular prism resonator that can be used for a single mode regime and the higher is the power output for a single mode T-VCSEL.
The higher quality factor of optical cavity resonator for a T-VCSEL, compared to a conventional VCSEL having a cylindrical or square prism shape of vertical optical cavity resonator, allows higher power output to be achieved for a single mode regime at the same quality of mirrors or the same power output with lower mirror quality.
For poor quality of the vertical mirrors, with a reflectivity less then 95%, another design of a T-VCSEL with a sidewall reflector can be used.
Such variants of a T-VCSEL design are shown in Fig. 2 and Fig. 3.
The active layer 1 can be made of a III-V or II-VI semiconductor double heterostructurej a single quantum well, multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326.
The optical cavity 2 of the T-VCSEL is made of a heterostructure or double heterostructure or an index-graded structure or another wave- guiding structure, upper and lower vertical mirrors 3 and 4 made of semiconductor superlattices or layered metal-
dielectric interference mirrors or layered dielectric-dielectric interference mirrors or arty other mirrors for vertical light confinement in a triangular or truncated triangular prism mesa structure 5 for lateral confinement of light.
Current is applied to the T-VCSEL via upper metallic contact 6, linked to upper conducting mirror 3 through contact layer 7, and lower electrode 8, linked to lower conducting mirror 4 through the conducting substrate 9.
The current results in light generation in active layer 1 and vertical light output 10, via a sidewall reflector 11.
The sidewall reflector 11 for vertical light output can be a mirror (Fig. 2) or an optical grating (Fig. 3).
Such a mirror can be made by etching, or gluing, or depositing of a lateral prism made of dielectric, or metal, or plastic covered by metal.
An optical grating can be made as a relief on the substrate in the vicinity of the side-walls of the triangular or truncated triangular vertical prism resonator.
For a T-VCSEL operating in a multiple-mode regime the optical grating (Fig. 3) can also divide or separate the optical modes by an output angle.
BRIEF DESCRIPTION
OF THE DRAWINGS
In the accompanying drawings: Fig. 1 shows the principal design of a TVCSEL; Fig. 2 shows a variant of T-VCSEL design with a mirror sidewall reflector; Fig. 3 shows a variant of T-N7CSEL design with a sidewall reflector made of an optical grating; and Figs. 4-8 show further T-VCSEL designs.
DETAILED DESCRIPTION OF THE P1lEFERED EMBODIMENTS
The invention will be more fully understood by reference to the following examples: EXAMPLE 1
The principal scheme of a single mode T-VCSEL generating light with a wavelength in the region 700 - 1000 nm according to Example 1 is shown in Fig. 1.
It has a lower electrode 8 to a conducting n-GaAs substrate 9 with a surface plane orientation (111) and a triangular or truncated triangular mesa structure 5 comprising a
s high-index GaAs optical cavity 2, containing an active layer 1 made of an InGaAs/GaAlAs double heterostructure or an InGaAs/GaAlAs single quantum well or InGaAs/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an e-type AlGaAs superlattice, an upper mirror 3, made of a p-type AlGaAs superlattice, an upper contact layer 7 made of p- type AlGaAs and a semi-transparent metallic contact 6. Current is applied to the T-VCSEL via upper semi-transparent metallic contact 6, linked to upper conducting mirror 3 through contact layer 7, and lower electrode 8, linked to lower conducting mirror 4 through the conducting substrate 9.
The current results in light generation in active layer 1 and vertical light output 10 through semi-transparent metallic contact 6.
EXAMPLE 2
The principal scheme of a multiple wavelength T-VCSEL generating light with a wavelength in the region 700 - 1000 rim according to Example 2 is shown in Fig. 4.
It has a lower electrode 8 to a conducting n-GaAs substrate 9 with a surface plane orientation (111) and a triangular or truncated triangular mesa structure 5 comprising a high-index GaAs optical cavity 2, containing an active layer l made of an InGaAs/GaAlAs double heterostructure or an InGaAs/GaAlAs single quantum well or InGaAs/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an interface between the high-index GaAs optical cavity layer 2 and an e- type AlGaAs cladding layer 12, an upper mirror 3, made of an interface between the high-index GaAs optical cavity layer 2 and a p-type AlGaAs cladding and contact layer 7, and a metallic contact 6.
Current is applied to the active layer of the multiple wavelength T-VCSEL via upper metallic contact 6, linked to contact and cladding layer 7, and lower electrode 8, linked to lower conducting cladding layer 12 through the conducting substrate 9.
The current results in lateral emission of light generated in active layer 1. The vertical light output 10 and wavelength separation is achieved by light scattering on a sidewall
reflector 11, comprising an optical grating made as a relief on the substrate in the vicinity of the side walls of the mesa structure.
EXAMPLE 3
The principal scheme of a single mode T-VCSEL generating light with a wavelength in the region 1300 rim or 1550 nm according to Example 3 is shown in Fig. 1.
It has a lower electrode 8 to a conducting n-InP substrate 9 with a surface plane orientation (111) and a triangular or truncated triangular mesa structure 5 comprising a high-index InGaAsP or AlGaAsSb optical cavity 2, containing an active layer 1 made of an InGaAsP/InGaAsP double heterostructure or an InGaAsP/InGaAsP single quantum well or InGaAsP/InGaAsP multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an e-type InGaAsP/InGaAsP or AlGaPSb/ AlGaPSb superlattice, an upper mirror 3, made of a p-
type InGaAsP/InGaAsP or AlGaPSb/ AlGaPSb superlattice, an upper contact and cladding layer 7 made of p-type InP and a semi-transparent metallic contact 6. Current is applied to the T-VCSEL via upper semi-transparent metallic contact 6, linked to upper conducting mirror 3 through contact layer 7, and lower electrode 8, linked to lower conducting mirror 4 through the conducting substrate 9.
The current results in light generation in active layer 1, and vertical light output 10, through semi-transparent metallic contact 6.
EXAMPLE 4
The principal scheme of a multiple wavelength T-VCSEL generating light with a wavelength in the region 1300 rim or 1550 rim according to Example 4 is shown in Fig. 4.
It has a lower electrode 8 to a conducting n-InP substrate 9 with a surface plane orientation (111) and a triangular or truncated triangular mesa structure 5, comprising a high-index InGaAsP or AlGaAsSb optical cavity 2, containing an active layer 1 made of an InGaAsP/InGaAsP double heterostructure or an InGaAsP/InGaAsP single quantum well or InGaAsP/InGaAsP multiple quantum wells or a current asymmetric resonance
tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an interface between the high-index optical cavity layer 2 and an etype AlGaInP cladding layer 12, an upper mirror 3, made of an interface between the high-index optical cavity layer 2 and a p-type AlGaInP cladding and contact layer 7, and a metallic contact 6.
Current is applied to the active layer of the multiple wavelength T-VCSEL via upper metallic contact 6, linked to contact and cladding layer 7, and lower electrode 8, linked to lower conducting cladding layer 12 through the conducting substrate 9.
The current results in lateral emission of light generated in active layer 1. The vertical light output 10 and wavelength separation is achieved by the light scattering on a sidewall reflector 11, comprising an optical grating made as a relief on the substrate in vicinity of the side walls of the mesa structure.
EXAMPLE 5
The principal scheme of a single mode T-VCSEL generating light with a wavelength in the region 1300 rim according to Example 5 is shown in Fig. 1.
It has a lower electrode 8 to a conducting n-GaAs substrate 9 with a surface plane orientation (111) and a triangular or truncated triangular mesa structure 5 comprising a high-index GaAs optical cavity 2, containing an active layer 1 made of a: GaAsSb/GaAlAs double heterostructure or an InGaAsN/GaAlAs double heterostructure or a GaAsSb/GaAlAs single quantum well or an InGaAsN/GaAlAs single quantum well or GaAsSb/GaAlAs multiple quantum wells or InGaAsN/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an e-type AlGaAs superlattice, an upper mirror 3 made of a p-
type AlGaAs superlattice, upper contact layer 7 made of p-type AlGaAs and a semi-
transparent metallic contact 6. Current is applied to the T-VCSEL via upper semi-
transparent metallic contact 6, linked to upper conducting mirror 3 through contact layer 7, and lower electrode 8, linked to lower conducting mirror 4 through the conducting substrate 9.
The current results in light generation in active layer 1 and vertical light output 1O, through semi-transparent metallic contact 6.
EXAMPLE 6
The principal scheme of a multiple wavelength T-VCSEL generating light with a wavelength in the region 1300 nm according to Example 6 is shown in Fig. 4.
It has a lower electrode 8 to a conducting n-GaAs substrate 9 with a surface plane orientation (111) and a triangular or truncated triangular mesa structure 5 comprising a high-index GaAs optical cavity 2 containing an active layer 1, made of a GaAsSb/GaAlAs double heterostructure or an InGaAsN/GaAlAs double heterostructure or a GaAsSb/GaAlAs single quantum well or an InGaAsN/GaAlAs single quantum well or GaAsSb/GaAlAs multiple quantum wells or InGaAsN/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an interface between the high-index GaAs optical cavity layer 2 and an e-type AlGaAs cladding layer 12, an upper mirror 3, made of an interface between the high-index GaAs optical cavity layer 2 and a p-type AlGaAs cladding and contact layer 7, and a metallic contact 6.
Current is applied to the active layer of the multiple wavelength T-VCSEL via upper metallic contact 6, linked to contact and cladding layer 7, and lower electrode 8, linked to lower conducting cladding layer 12 through the conducting substrate 9.
The current results in lateral emission of light generated in active layer 1. The vertical light output 10 and wavelength separation is achieved by the light scattering on a sidewall reflector 11 comprising an optical grating made as a relief on the substrate in the vicinity of the side walls of the mesa structure.
EXAMPLE 7
The principal scheme of a single mode T-NtCSEL generating light with a wavelength in the region 400-700 rim according to Example 7 is shown in Fig. 5.
It has a lower electrode 8 to a conducting wurtzite n-GaN layer 13, grown on a sapphire substrate 14 with a surface plane orientation (0001) with the use of a BAlGaInN buffer layer 15 according to GB-A-2 350 721 and a triangular or truncated triangular mesa structure 5 comprising a highindex InGaAlN optical cavity 2, containing an active layer 1 made of an InGaN/InGaAlN double heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an e-type AlGaN superlattice, an upper mirror 3, made of a p-type AlGaN superlattice, an upper contact layer 7 made of p-type InAlGaN and a semi-transparent metallic contact 6. Current is applied to the T-VCSEL via upper semi-transparent metallic contact 6, linked to upper conducting mirror 3 through contact layer 7, and lower electrode 8, linked to lower conducting mirror 4 through the layer 13.
The current results in light generation in active layer 1 and vertical light output 10, through semi-transparent metallic contact 6.
EXAMPLE 8
The principal scheme of a multiple wavelength T-VCSEL generating light with a wavelength in the region 400-700 rim according to Example 8 is shown in Fig. 6.
It has a lower electrode 8 to a conducting n-GaN layer 13, grown on a sapphire substrate 14 with a surface plane orientation (0001), with the use of a BAlGaInN buffer layer 15 according to GB-A-2 350 721 and a triangular or truncated triangular mesa structure 5 comprising a highindex InGaAlN optical cavity 2, containing an active layer 1 made of an InGaN/InGaAlN double heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an interface between the high-index InGaAlN optical cavity layer 2 and an e-type AlGaN cladding layer 12, an upper mirror 3, made of an interface between the high-index InGaAlN optical cavity layer 2 and a p-type AlGaN cladding and contact layer 7, and a metallic contact 6.
Current is applied to the active layer of the multiple wavelength T-VCSEL via upper metallic contact 6, linked to contact and cladding layer 7, and lower electrode 8, linked to lower conducting cladding layer 12, through the conducting layer 13.
The current results in lateral emission of light generated in active layer 1. The vertical light output l O and wavelength separation is achieved by light scattering on a sidewall reflector 1 l, comprising an optical grating made as a relief on the substrate in vicinity of the side walls of the mesa structure.
EXAMPLE 9
The principal scheme of a single mode T-VCSEL generating light with a wavelength in the region 400-700 rim according to Example 9 is shown in Fig. 7.
It has a lower electrode 8 to a conducting n-SiC substrate 16, a BAlGaInN buffer layer 15 according to GB-A-2 350 721, an n-GaN layer 13 and a triangular or truncated triangular mesa structure 5, comprising a highindex InGaAlN optical cavity 2, containing an active layer l made of an InGaN/InGaAlN double heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an e-type AlGaN superlattice, an upper mirror 3, made of a p-type AlGaN superlattice, an upper contact layer 7 made of p-type InAlGaN and a semi-transparent metallic contact 6. Current is applied to the T-VCSEL via upper semi-transparent metallic contact 6, linked to upper conducting mirror 3 through contact layer 7, and lower electrode 8, linked to lower conducting mirror 4 through the conducting substrate 16.
The current results in light generation in active layer l and vertical light output 10 through semi-transparent metallic contact 6.
EXAMPLE 10
The principal scheme of multiple wavelength T-VCSEL generating light with a wavelength in the region 400-700 rim according to Example 10 is shown in Fig. 8.
It has a lower electrode 8 to a conducting n-SiC substrate 16, a BAlGaInN buffer layer 15 according to GB-A-2 350 721 and a triangular or truncated triangular mesa structure 5 comprising a high-index InGaAlN optical cavity 2, containing an active layer 1 made of an InGaN/InGaAIN double heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure according to GB-A-2 352 326, a lower mirror 4, made of an interface between the high-index InGaAlN optical cavity layer 2 and an etype AlGaN cladding layer 12, an upper mirror 3, made of an interface between the high-index InGaAIN optical cavity layer 2 and a p-type AlGaN cladding and contact layer 7, and a metallic contact 6.
Current is applied to the active layer of the multiple wavelength T-VCSEL via upper metallic contact 6, linked to contact and cladding layer 7, and lower electrode 8, linked to lower conducting cladding layer 12, through the conducting substrate 16.
The current results in lateral emission of light generated in active layer 1. The vertical light output 10 and wavelength separation is achieved by light scattering on a sidewall reflector 11, comprising an optical grating made as a relief on the substrate in vicinity of the side walls of the mesa structure.
Claims (1)
1. A semiconductor vertical cavity surface emitting laser with a threedimensional optical cavity resonator shaped as a triangular or truncated triangular prism mesa structure (T-VCSEL).
2. A T-VCSEL with vertical light output through a semi-transparent metallic contact comprising: an active layer made of a III-V or II-VI semiconductor double heterostructure, a single quantum well, multiple quantum wells or a current asymmetric resonance tunuelling structure; an optical cavity made of a heterostructure or a double heterostructure or index-
graded structure or other wave-guiding structure, upper and lower mirrors made of semiconductor superlattices or layered metal-dielectric interference mirrors or layered dielectric-dielectric interference mirrors or any other high quality mirrors with a reflectivity higher than 95% for vertical light confinement and a triangular or truncated triangular prism mesa structure for lateral confinement of light; an upper semi-transparent metallic contact linked to the upper conducting mirror through a contact layer; and a lower electrode linked to the lower conducting mirror through a conducting substrate. 3. A T-VCSEL with vertical light output through a sidewall reflector comprising: an active layer made of a III-V or II-VI semiconductor double heterostructure, a single quantum well, multiple quantum wells or a current asymmetric resonance tunnelling structure; an optical cavity made of a heterostructure or a double heterostructure or index-
graded structure or other wave-guiding structure, upper and lower mirrors made of
semiconducting superlattices or layered metal-dielectric interference mirrors or layered dielectric-dielectric interference mirrors or any interface between two dielectrics with different refractive indexes operating as mirrors for vertical light confinement and a triangular or truncated triangular prism mesa structure for lateral confinement of light; an upper metallic contact linked to the upper conducting mirror through a contact layer; a lower electrode linked to the lower conducting mirror through a conducting substrate; and a sidewall reflector for vertical light output.
4. A T-VCSEL according to claim 3, wherein the sidewall reflector comprises a mirror. 5. A T-VCSEL according to claim 4, wherein the mirror has been made by etching, gluing or depositing of dielectric or metal or plastic covered by a metal lateral prism.
6. A T-VCSEL according to claim 4, wherein the sidewall reflector comprises an optical grating.
7. A T-VCSEL according to claim 6, wherein the optical grating has been made as a relief on the surface in the vicinity of sidewalls of the triangular or truncated triangular mesa structure.
8. A T-VCSEL according to claim 6 or 7, wherein the optical grating is for both vertical light output and division or separation of optical modes in a multiple mode regime. 9. A T-VCSEL generating light with a wavelength in the region 700 - 1000 rim comprising:
a lower electrode to a conducting n-GaAs substrate with a surface plane orientation (1 1 1); a triangular or truncated triangular mesa structure, comprising a high-index GaAs optical cavity, containing an active layer made of an InGaAs/GaAlAs double heterostructure or an InGaAs/GaAlAs single quantum well or InGaAs/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror made of an etype AlGaAs superlattice; an upper mirror made of a p-type AlGaAs superlattice; an upper contact layer made of p-type AlGaAs; and a semitransparent metallic contact.
10. A multiple wavelength T-VCSEL generating light with a wavelength in the region 700 - 1000 rim comprising: a lower electrode to a conducting nGaAs substrate with a surface plane orientation (11 1); a triangular or truncated triangular mesa structure, comprising a high-index GaAs optical cavity, containing an active layer made of an InGaAs/GaAlAs double heterostructure or an InGaAs/GaAlAs single quantum well or InGaAs/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an interface between the high-index optical cavity layer and an e-type AlGaAs cladding layer; an upper mirror, made of an interface between the high-index optical cavity layer and a ptype AlGaAs cladding and contact layer; a metallic contact; and
a sidewall reflector, comprising an optical grating made as a relief on the surface in vicinity of side walls of the mesa structure; 11. A TVCSEL generating light with a wavelength in the region 1300 rim or 1550 rim comprising: a lower electrode to a conducting n-InP substrate with a surface plane orientation (111);
a triangular or truncated triangular mesa structure, comprising a highindex InGaAsP or AlGaAsSb optical cavity, containing an active layer made of an InGaAsP/InGaAsP double heterostructure or an InGaAsP/InGaAsP single quantum well or InGaAsP/InGaAsP multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an etype InGaAsP/InGaAsP or AlGaPSb/ AlGaPSb superlattice; an upper mirror, made of a p-type InGaAsP/InGaAsP or AlGaPSb/ AlGaPSb superlattice; an upper contact and cladding layer made of p-type InP; and a semitransparent metallic contact.
17. A multiple wavelength T-VCSEL generating light with a wavelength in the region 1300 nm or 1550 rim comprising: a lower electrode to a conducting n-InP substrate with a surface plane orientation (111);
a triangular or truncated triangular mesa structure, comprising a highindex InGaAsP or AlGaAsSb optical cavity, containing an active layer made of an
InGaAsP/InGaAsP double heterostructure or an InGaAsP/InGaAsP single quantum well or InGaAsP/InGaAsP multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an interface between the high-index optical cavity layer and an e-type AlGaInP cladding layer; an upper mirror, made of an interface between the high-index optical cavity layer and a p-t>1pe AlGaInP cladding and contact layer; a metallic contact; and a sidewall reflector, comprising an optical grating made as a relief on the surface in the vicinity of side walls of the mesa structure.
13. A T-VCSEL generating light with a wavelength in the region 1300 rim comprising: a lower electrode to a conducting n-GaAs substrate with a surface plane orientation (11 1); a triangular or truncated triangular mesa structure, comprising a high-index GaAs optical cavity, containing an active layer made of a GaAsSb/GaAlAs double heterostructure or an InGaAsN/GaAlAs double heterostructure or a GaAsSb/GaAlAs single quantum well or an InGaAsN/GaAlAs single quantum well or GaAsSb/GaAlAs multiple quantum wells or InGaAsN/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror made of an etype AlGaAs superlattice; an upper mirror made of a p-type AlGaAs superlattice; an upper contact layer made of p-type AlGaAs; and
a semi-transparent metallic contact.
14. A multiple wavelength T-VCSEL generating light with a wavelength in the region 1300 nm comprising: a lower electrode to a conducting n-GaAs substrate with a surface plane orientation (11 1); a triangular or truncated triangular mesa structure, comprising a high-index GaAs optical cavity, containing an active layer made of a GaAsSb/GaAlAs double heterostructure or an InGaAsN/GaAlAs double heterostructure or a GaAsSb/GaAlAs single quantum well or an InGaAsN/GaAlAs single quantum well or GaAsSb/GaAlAs multiple quantum wells or InGaAsN/GaAlAs multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an interface between the high-index optical cavity layer and an e-type AlGaAs cladding layer; an upper mirror, made of an interface between the high-index optical cavity layer and a p-type AlGaAs cladding and contact layer; a metallic contact; and a sidewall reflector, comprising an optical grating made as a relief in the vicinity of side walls of the mesa structure.
15. A single mode T-VCSEL generating light with a wavelength in the region 400-
700 nm comprising: a lower electrode to a conducting wurtzite n-GaN layer, grown on a sapphire substrate with a surface plane orientation (0001); a BAlGaInN buffer layer;
a triangular or truncated triangular mesa structure comprising a highindex InGaAlN optical cavity, containing an active layer made of an InGaN/InGaAlN double heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an e-type AlGaN superlattice; an upper mirror, made of a p-type AlGaN superlattice; an upper contact layer made of p-type InAlGaN; and a semi-transparent metallic contact.
l 6. A multiple wavelength T-VCSEL generating light with a wavelength in the region 400-700 urn comprising: a lower electrode to a conducting nGaN layer, grown on a sapphire substrate with a surface plane orientation (0001); a BAlGaInN buffer layer; a triangular or truncated triangular mesa structure, comprising a high-index InGaAlN optical cavity, containing an active layer made of an InGaN/InGaAlN double heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an interface between the high-index optical cavity layer and an e-type AlGaN cladding layer; an upper mirror, made of an interface between the high-index optical cavity layer and a p- type AlGaN cladding and contact layer; a metallic contact; and
a sidewall reflector, comprising an optical grating made as a relief in the vicinity of side walls of the mesa structure.
17. A single mode T-VCSEL generating light with a wavelength in the region 400-
700 nm comprising: a lower electrode to a conducting n-SiC substrate; a BAlGaInN buffer layer; an n-GaN layer; a triangular or truncated triangular mesa structure, comprising a high-index InGaAlN optical cavity, containing an active layer made of an InGaN/InGaAlN double heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an e-type AlGaN superlattice; an upper mirror, made of a p-type AlGaN superlattice; an upper contact layer made of a p-type InAlGaN; and a semi-transparent metallic contact.
1B. A multiple wavelength T-VCSEL generating light with a wavelength in the region 400-700 rim comprising: a lower electrode to a conducting nSiC substrate; a BAlGaInN buffer layer; a triangular or truncated triangular mesa structure, comprising a high-index InGaAlN optical cavity, containing an active layer made of an InGaN/InGaAlN double
heterostructure or an InGaN/InGaAlN single quantum well or InGaN/InGaAlN multiple quantum wells or a current asymmetric resonance tunnelling structure; a lower mirror, made of an interface between the high-index optical cavity layer and an e-type AlGaN cladding layer; an upper mirror, made of an interface between the high-index optical cavity layer and a ptype AlGaN cladding and contact layer; an upper metallic contact; and a sidewall reflector, comprising an optical grating made as a relief in the vicinity of side walls of the mesa structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0201753A GB2387024A (en) | 2002-01-25 | 2002-01-25 | Vcsel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0201753A GB2387024A (en) | 2002-01-25 | 2002-01-25 | Vcsel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0201753D0 GB0201753D0 (en) | 2002-03-13 |
| GB2387024A true GB2387024A (en) | 2003-10-01 |
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ID=9929761
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0201753A Withdrawn GB2387024A (en) | 2002-01-25 | 2002-01-25 | Vcsel |
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| Country | Link |
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| GB (1) | GB2387024A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008130628A (en) * | 2006-11-17 | 2008-06-05 | Hitachi Displays Ltd | Liquid-crystal display device |
| CN100433474C (en) * | 2007-03-30 | 2008-11-12 | 东南大学 | Prism type vertical cavity surface emitting laser |
| CN111555115A (en) * | 2020-05-19 | 2020-08-18 | 北京工业大学 | VCSEL array chip for emitting coherent light |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269592A (en) * | 1975-12-08 | 1977-06-09 | Toshiba Corp | Semiconductor luminescent element |
| US4950622A (en) * | 1988-04-28 | 1990-08-21 | Korea Advanced Institute Of Science And Technology | Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode |
| JPH04216691A (en) * | 1990-12-17 | 1992-08-06 | Sony Corp | Semiconductor laser device and its manufacture |
| US5291033A (en) * | 1991-05-29 | 1994-03-01 | Eastman Kodak Company | Semiconductor light-emitting device having substantially planar surfaces |
| US5379314A (en) * | 1992-10-20 | 1995-01-03 | Sony Corporation | Semiconductor laser and method of manufacturing semiconductor laser |
| US5383215A (en) * | 1992-08-25 | 1995-01-17 | Sony Corporation | Semiconductor laser which has a (100) top surface and a stripe ridge which extends in the horizontal <01-1> axis direction and has side wall surfaces (110) and a triangular region between (111) faces |
| GB2313234A (en) * | 1993-07-20 | 1997-11-19 | Mitsubishi Electric Corp | Laser diode array |
| JPH10200187A (en) * | 1997-01-06 | 1998-07-31 | Fujitsu Ltd | Surface emission semiconductor laser and fabrication thereof |
| JP2000323790A (en) * | 1999-05-14 | 2000-11-24 | Canon Inc | Semiconductor near-field light source, its manufacture, and near-field optical system using the same |
| GB2350721A (en) * | 1999-08-24 | 2000-12-06 | Arima Optoelectronics Corp | Growing semiconductor layers |
-
2002
- 2002-01-25 GB GB0201753A patent/GB2387024A/en not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5269592A (en) * | 1975-12-08 | 1977-06-09 | Toshiba Corp | Semiconductor luminescent element |
| US4950622A (en) * | 1988-04-28 | 1990-08-21 | Korea Advanced Institute Of Science And Technology | Method for manufacturing a surface emitting type AlGaAs/GaAs semiconductor laser diode |
| JPH04216691A (en) * | 1990-12-17 | 1992-08-06 | Sony Corp | Semiconductor laser device and its manufacture |
| US5291033A (en) * | 1991-05-29 | 1994-03-01 | Eastman Kodak Company | Semiconductor light-emitting device having substantially planar surfaces |
| US5383215A (en) * | 1992-08-25 | 1995-01-17 | Sony Corporation | Semiconductor laser which has a (100) top surface and a stripe ridge which extends in the horizontal <01-1> axis direction and has side wall surfaces (110) and a triangular region between (111) faces |
| US5379314A (en) * | 1992-10-20 | 1995-01-03 | Sony Corporation | Semiconductor laser and method of manufacturing semiconductor laser |
| GB2313234A (en) * | 1993-07-20 | 1997-11-19 | Mitsubishi Electric Corp | Laser diode array |
| JPH10200187A (en) * | 1997-01-06 | 1998-07-31 | Fujitsu Ltd | Surface emission semiconductor laser and fabrication thereof |
| JP2000323790A (en) * | 1999-05-14 | 2000-11-24 | Canon Inc | Semiconductor near-field light source, its manufacture, and near-field optical system using the same |
| GB2350721A (en) * | 1999-08-24 | 2000-12-06 | Arima Optoelectronics Corp | Growing semiconductor layers |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008130628A (en) * | 2006-11-17 | 2008-06-05 | Hitachi Displays Ltd | Liquid-crystal display device |
| CN100433474C (en) * | 2007-03-30 | 2008-11-12 | 东南大学 | Prism type vertical cavity surface emitting laser |
| CN111555115A (en) * | 2020-05-19 | 2020-08-18 | 北京工业大学 | VCSEL array chip for emitting coherent light |
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| Publication number | Publication date |
|---|---|
| GB0201753D0 (en) | 2002-03-13 |
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