GB2383206B - Ferroelectric memory devices with memory cells in a row connected to different plate lines - Google Patents

Ferroelectric memory devices with memory cells in a row connected to different plate lines

Info

Publication number
GB2383206B
GB2383206B GB0304157A GB0304157A GB2383206B GB 2383206 B GB2383206 B GB 2383206B GB 0304157 A GB0304157 A GB 0304157A GB 0304157 A GB0304157 A GB 0304157A GB 2383206 B GB2383206 B GB 2383206B
Authority
GB
United Kingdom
Prior art keywords
plate lines
different plate
row connected
memory cells
memory devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0304157A
Other versions
GB0304157D0 (en
GB2383206A (en
Inventor
Byung-Gil Jeon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2001-0000944A external-priority patent/KR100407578B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0304157D0 publication Critical patent/GB0304157D0/en
Publication of GB2383206A publication Critical patent/GB2383206A/en
Application granted granted Critical
Publication of GB2383206B publication Critical patent/GB2383206B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
GB0304157A 2001-01-08 2002-01-07 Ferroelectric memory devices with memory cells in a row connected to different plate lines Expired - Fee Related GB2383206B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2001-0000944A KR100407578B1 (en) 2001-01-08 2001-01-08 Ferroelectric memory
GB0200268A GB2374474B (en) 2001-01-08 2002-01-07 Ferroelectric memory devices with memory cells in a row connected to different plate lines

Publications (3)

Publication Number Publication Date
GB0304157D0 GB0304157D0 (en) 2003-03-26
GB2383206A GB2383206A (en) 2003-06-18
GB2383206B true GB2383206B (en) 2003-11-12

Family

ID=26246919

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0304157A Expired - Fee Related GB2383206B (en) 2001-01-08 2002-01-07 Ferroelectric memory devices with memory cells in a row connected to different plate lines

Country Status (1)

Country Link
GB (1) GB2383206B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0278167A2 (en) * 1987-02-12 1988-08-17 Ramtron International Corporation Self restoring ferroelectric memory
JP2001358312A (en) * 2000-06-12 2001-12-26 Fujitsu Ltd Semiconductor memory device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0278167A2 (en) * 1987-02-12 1988-08-17 Ramtron International Corporation Self restoring ferroelectric memory
JP2001358312A (en) * 2000-06-12 2001-12-26 Fujitsu Ltd Semiconductor memory device

Also Published As

Publication number Publication date
GB0304157D0 (en) 2003-03-26
GB2383206A (en) 2003-06-18

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20140107