GB2379799A - Integrated dual frequency noise attenuator and transient suppressor - Google Patents

Integrated dual frequency noise attenuator and transient suppressor

Info

Publication number
GB2379799A
GB2379799A GB0229769A GB0229769A GB2379799A GB 2379799 A GB2379799 A GB 2379799A GB 0229769 A GB0229769 A GB 0229769A GB 0229769 A GB0229769 A GB 0229769A GB 2379799 A GB2379799 A GB 2379799A
Authority
GB
United Kingdom
Prior art keywords
electrodes
dual frequency
capacitors
semiconductor
transient suppressor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0229769A
Other versions
GB0229769D0 (en
Inventor
Hayworth Wilson
Jeffrey Cain
John Barris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Avx Components Corp
Original Assignee
AVX Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AVX Corp filed Critical AVX Corp
Publication of GB0229769D0 publication Critical patent/GB0229769D0/en
Publication of GB2379799A publication Critical patent/GB2379799A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1783—Combined LC in series path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0085—Multilayer, e.g. LTCC, HTCC, green sheets

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thermistors And Varistors (AREA)
  • Filters And Equalizers (AREA)

Abstract

An integral dual frequency by-pass and transient suppressor device (10) has at least two ceramic semiconductor layers (11 and 31), the upper surfaces of which are formed with electrodes (12 and 13) of generally U-shaped configuration. The base portions (14 and 14a) of the electrodes are exposed at opposite surfaces of the semiconductor layers, the leg portions (15 and 16) of the U-shaped electrodes extending toward the base portions of electrodes of opposite polarity. The overlap (19) or registration area of one pair of legs (15 and 15a) differs from the overlap area (20) of the other leg pair (16 and 16a) with the result that two capacitors of different values are formed, the capacitors being in parallel and accordingly defining a low impedance path at two discrete frequencies. By varying the conductive paths as a function of the length of the electrode and/or the base of the U, a desired internal inductance is developed. Use of a semiconductor material in place of a dielectric provides transient energy suppression by shunting to ground any signal introduced to the device at a level at or above the breakdown voltage of the semiconductor.
GB0229769A 2000-08-01 2001-08-01 Integrated dual frequency noise attenuator and transient suppressor Withdrawn GB2379799A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22217100P 2000-08-01 2000-08-01
PCT/US2001/024125 WO2002011160A1 (en) 2000-08-01 2001-08-01 Integrated dual frequency noise attenuator and transient suppressor

Publications (2)

Publication Number Publication Date
GB0229769D0 GB0229769D0 (en) 2003-01-29
GB2379799A true GB2379799A (en) 2003-03-19

Family

ID=22831165

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0229769A Withdrawn GB2379799A (en) 2000-08-01 2001-08-01 Integrated dual frequency noise attenuator and transient suppressor

Country Status (6)

Country Link
JP (1) JP2004505577A (en)
CN (1) CN1436354A (en)
AU (1) AU2001283077A1 (en)
DE (1) DE10196201T1 (en)
GB (1) GB2379799A (en)
WO (1) WO2002011160A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7321485B2 (en) 1997-04-08 2008-01-22 X2Y Attenuators, Llc Arrangement for energy conditioning
US9054094B2 (en) 1997-04-08 2015-06-09 X2Y Attenuators, Llc Energy conditioning circuit arrangement for integrated circuit
US7336468B2 (en) 1997-04-08 2008-02-26 X2Y Attenuators, Llc Arrangement for energy conditioning
DE10202915A1 (en) * 2002-01-25 2003-08-21 Epcos Ag Electro-ceramic component with internal electrodes
KR20060031943A (en) * 2004-10-11 2006-04-14 삼성전기주식회사 Varistor-lc filter compositon device
JP2008535207A (en) 2005-03-01 2008-08-28 エックストゥーワイ アテニュエイターズ，エルエルシー Regulator with coplanar conductor
DE102022114552A1 (en) 2022-06-09 2023-12-14 Tdk Electronics Ag Process for producing a multilayer varistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898562A (en) * 1997-05-09 1999-04-27 Avx Corporation Integrated dual frequency noise attenuator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5898562A (en) * 1997-05-09 1999-04-27 Avx Corporation Integrated dual frequency noise attenuator

Also Published As

Publication number Publication date
WO2002011160A1 (en) 2002-02-07
GB0229769D0 (en) 2003-01-29
JP2004505577A (en) 2004-02-19
CN1436354A (en) 2003-08-13
DE10196201T1 (en) 2003-04-17
AU2001283077A1 (en) 2002-02-13

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)