GB2379086B - Defect reduction for interdiffused mercury cadmium telluride based infrared detector materials - Google Patents

Defect reduction for interdiffused mercury cadmium telluride based infrared detector materials

Info

Publication number
GB2379086B
GB2379086B GB0216208A GB0216208A GB2379086B GB 2379086 B GB2379086 B GB 2379086B GB 0216208 A GB0216208 A GB 0216208A GB 0216208 A GB0216208 A GB 0216208A GB 2379086 B GB2379086 B GB 2379086B
Authority
GB
United Kingdom
Prior art keywords
interdiffused
infrared detector
cadmium telluride
mercury cadmium
defect reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0216208A
Other versions
GB2379086A (en
GB0216208D0 (en
Inventor
Pradip Mitra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lockheed Martin Corp
Original Assignee
Lockheed Corp
Lockheed Martin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/882,881 external-priority patent/US5998235A/en
Application filed by Lockheed Corp, Lockheed Martin Corp filed Critical Lockheed Corp
Publication of GB0216208D0 publication Critical patent/GB0216208D0/en
Publication of GB2379086A publication Critical patent/GB2379086A/en
Application granted granted Critical
Publication of GB2379086B publication Critical patent/GB2379086B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
GB0216208A 1997-06-26 1998-06-23 Defect reduction for interdiffused mercury cadmium telluride based infrared detector materials Expired - Lifetime GB2379086B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/882,881 US5998235A (en) 1997-06-26 1997-06-26 Method of fabrication for mercury-based quaternary alloys of infrared sensitive materials
GB9813545A GB2326762B (en) 1997-06-26 1998-06-23 Defect reduction for interdiffused mercury cadmium telluride based infrared detector materials

Publications (3)

Publication Number Publication Date
GB0216208D0 GB0216208D0 (en) 2002-08-21
GB2379086A GB2379086A (en) 2003-02-26
GB2379086B true GB2379086B (en) 2003-04-09

Family

ID=26313918

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0216208A Expired - Lifetime GB2379086B (en) 1997-06-26 1998-06-23 Defect reduction for interdiffused mercury cadmium telluride based infrared detector materials

Country Status (1)

Country Link
GB (1) GB2379086B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954182A (en) * 1980-11-13 1990-09-04 Energy Conversion Devices, Inc. Multiple cell photoresponsive amorphous photo voltaic devices including graded band gaps
US5633514A (en) * 1993-09-07 1997-05-27 Sony Corporation Semiconductor light emitting device with lattice-matching and lattice-mismatching
US5838053A (en) * 1996-09-19 1998-11-17 Raytheon Ti Systems, Inc. Method of forming a cadmium telluride/silicon structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954182A (en) * 1980-11-13 1990-09-04 Energy Conversion Devices, Inc. Multiple cell photoresponsive amorphous photo voltaic devices including graded band gaps
US5633514A (en) * 1993-09-07 1997-05-27 Sony Corporation Semiconductor light emitting device with lattice-matching and lattice-mismatching
US5838053A (en) * 1996-09-19 1998-11-17 Raytheon Ti Systems, Inc. Method of forming a cadmium telluride/silicon structure

Also Published As

Publication number Publication date
GB2379086A (en) 2003-02-26
GB0216208D0 (en) 2002-08-21

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)

Free format text: REGISTERED BETWEEN 20091008 AND 20091014

PE20 Patent expired after termination of 20 years

Expiry date: 20180622