GB2364276A - Method of forming an inkjet nozzle over an ink energising element on a substrate including the step of forming a sacrificial oxide bump on the substrate - Google Patents
Method of forming an inkjet nozzle over an ink energising element on a substrate including the step of forming a sacrificial oxide bump on the substrate Download PDFInfo
- Publication number
- GB2364276A GB2364276A GB0122864A GB0122864A GB2364276A GB 2364276 A GB2364276 A GB 2364276A GB 0122864 A GB0122864 A GB 0122864A GB 0122864 A GB0122864 A GB 0122864A GB 2364276 A GB2364276 A GB 2364276A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- forming
- oxide
- ink jet
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 title claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 66
- 238000010304 firing Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 231100000069 corrosive reaction Toxicity 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/1433—Structure of nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/162—Manufacturing of the nozzle plates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
A method of forming an ink jet nozzle includes a series of processing steps including etching, patterning and photoresists to form a positively sloped sacrificial oxide bump 66 (Fig.4C) on the surface of a substrate 50. The sacrificial bump is removed by wet oxide etching to form the nozzle 80 (Fig.4H). The nozzle includes silicon-oxide layer 52, 56, 72 and the top layer 72 may be chemically-mechanically polished (Figs.4E,4F) down to an etch-stop SiN or SiC layer 70 to form an orifice layer 74 (Fig.4H). A nozzle including an oxide-nitride or oxide-carbide composite orifice layer (41,Fig.2) is also disclosed.
Description
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METHOD OF FORMING INK JET NOZZLES This invention relates generally to forming an ink jet print nozzle.
Ink jet printing mechanisms use pens that shoot droplets of ink onto a printable surface to generate an image. Ink jet printing mechanisms may be used in a wide variety of applications, including computer printers, plotters, copiers, and facsimile machines.
For convenience, the concepts ofthe invention are discussed in the context of a printer.
An ink jet printer typically includes a print head having a multitude of independently addressable firing units. Each firing unit includes an ink chamber connected to a common ink source, and to an ink jet print nozzle. A transducer within each ink chamber provides the impetus for expelling ink droplets through the associated ink jet print nozzle. Typically, the transducer is a firing resistor which heats the ink until the ink droplets are expelled through the inkjet print nozzle.
Generally, a substrate supports the firing resistors. An orifice layer which includes the ink jet nozzles is attached to the substrate so that each ink jet nozzle corresponds with an associated firing resistor and forms an ink chamber.
To obtain a high resolution printed output, it is desirable to maximize the density ofthe firing units, requiring miniaturization ofthe print head components. The substrate
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that supports the firing resistors and the orifice layer that provides the ink jet nozzle above each resistor are subject to small dimensional variations that can accumulate and limit miniaturization.
Monolithic print heads have been developed through print head manufacturing processes which use photo imaging techniques similar to those used in semiconductor manufacturing. The components are constructed on a flat wafer by selectively adding and subtracting layers ofvarious materials. Using photo-imaging techniques, dimensional variations are limited. Further variations do not accumulate because each layer is registered to an original reference on the wafer.
Existing monolithic print heads are complex to manufacture. Further, the ink jet nozzles are formed from either a polymer or metal material. Polymer and metal materials offer limited performance because the surfaces of these materials can be rough, and because these materials react corrosively with the ink. It is important that the surface of the ink jet nozzle be smooth so as to not interrupt the flow of ink through the ink jet nozzles. Further, corrosive reactions to the ink cause the ink jet nozzles to break down and deteriorate.
It is desirable to have an ink jet nozzle in which the surface ofthe ink jet nozzle is formed from a material which is smoother than presently existing materials. Further, the material would not react to ink which flows through the ink jet nozzle thereby increasing the useful life of the ink jet nozzle.
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According to an aspect of the present invention, there is provided a method of forming an ink jet nozzle over an ink energizing element on an upper surface of a substrate, the method comprising: creating a positive sloped sacrificial oxide bump on the surface; depositing an etch stop layer and an oxide layer over the surface and the sacrificial bump; polishing the oxide to the etch stop layer forming an orifice layer; creating an opening in the orifice layer over the sacrificial oxide bump; and removing the sacrificial oxide bump.
The method according to preferred embodiments of the present invention includes the following steps. First, a positive sloped sacrificial oxide bump is created on the surface.
Next, a nitride or carbide composite layer and an oxide layer are deposited over the surface and the sacrificial bump. The oxide and composite layers are polished forming an orifice layer. An opening in the orifice layer is created over the sacrificial oxide bump.
Finally, the sacrificial oxide bump is removed yielding an ink jet nozzle.
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Other aspects and advantages of the present invention will become apparent from the following detailed description, taken in conjunction with the accompanying drawings, illustrating by way of example the principles of the invention.
Figure 1 is a perspective view of an ink jet pen having a print head which includes ink jet nozzles formed according to the invention.
Figure 2 is a cross-sectional view of an ink jet nozzle formed according to an embodiment of the invention.
Figure 3 is a perspective view of the nozzle shown in Figure 2.
Figure 4A-4H show a series of steps in the formation of a nozzle according to an embodiment of the invention.
Figures 5A, 5B show alternative processing steps to the processing steps shown in Figures 4A-4C.
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As shown in the drawings for purposes of illustration reference is made to a monolithic ink jet nozzle. The ink jet nozzle is formed form an oxide-nitride or oxide carbide composition. The composition provides an ink jet nozzle which is smoother than presently used polymer ink jet nozzles. Further, the composition does not react to ink
passing through the ink nozzle. Therefore, the ink nozzle lasts longer than presently existing ink jet nozzles.
Figure 1 is a perspective view of an ink jet pen 10 having a print head 12 which includes ink jet nozzles 18 formed according to the invention. The ink jet pen 10 also includes a lower portion 14 containing ink reservoir that supplies ink to the print head 12.
Figure 2 is a cross-sectional view of an ink jet nozzle formed according to an embodiment of the invention. This embodiment includes an ink jet nozzle 18. The ink jet nozzle 18 is formed by a frustoconical firing chamber 36 of an orifice layer 30 attached to a silicon substrate 20. The substrate 20 includes a top surface 22 that is typically coated with a passivation layer 24.
A thin film resistor 26 is typically formed over the top surface 22. The top surface 22 of the substrate forms a bottom section ofthe ink jet nozzle 18 which receives ink. The orifice layer 30 has a lower surface 32 that confonnally rests above the top surface 22.
The ink jet nozzle 18 include walls 41 which are negatively sloped from a smaller circular external orifice 16 to a larger circular base periphery 40. The larger circular base periphery 40 is centered around the thin film resistor 26. The ink jet nozzle 18 is aligned on an axis of the thin film resistor 26.
The passivation layer 24 defines several ink supply vias 42 dedicated to the ink jet nozzle 18. The vias 42 are entirely encircled by the lower periphery 40 ofthe ink jet nozzle 18.
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The walls 41 of the ink jet nozzle 18 are formed from a oxide-nitride or oxide- carbide material. The oxide-nitride or oxide-carbide material allows the walls 41 to be smoother than previously possible. Polymer walls, for example,. are rougher. Rough walls impede the flow of ink flowing through the ink jet nozzle 18. The smooth walls 41 of the ink jet nozzle 18 of the invention do not impede the flow of ink passing through the frustoconical firing chamber 36 as much as rough polymer or rough metal walls.
The oxide-nitride or oxide-carbide walls 41 of the ink jet nozzle ofthe invention do not react to ink passing though the frustoconical firing chamber 36. Prior art ink jet nozzles are generally formed from materials which react to ink which makes physical contact with the surface of the nozzles. The reactions reduce the useable life time of the ink jet nozzle. That is, the material ofthe inkjet nozzle begins to break down, thereby reducing the performance ofthe ink jet nozzle.
The substrate 20 includes a tapered trench 44 which provides a path for ink to flow between the reservoir 14 and the ink jet nozzle 18.
Figure 3 is a perspective view of a nozzle formed according to an embodiment of the invention. A conductor 46 provides a conductive path for current flowing through the thin film resistor 26. The thin film resistor 26 is a firing resistor which heats the ink until the ink droplets are expelled through the ink jet print nozzle 18.
Figures 4A-4H show a series of processing steps in the formation of a nozzle according to an embodiment ofthe invention. First, a structure as shown in Figure 4A is formed which includes a substrate 50, a first silicon-oxide (Si02) layer 52 and tantalum (Ta) layer 54. A second silicon-oxide layer 56 is deposited over the Ta layer 54. A poly-silicon layer 58 is deposited over the second-silicon oxide layer 56. Finally, a photo-resist layer 60 is deposited over the poly-silicon layer 58. The photo-resist layer 60 is patterned so that an island 62 ofphoto-resist is located where an ink jet nozzle is to be formed over the
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substrate 50. The photo-resist layer 60 pattern can be formed by a standard lithography process.
Figure 4B shows the structure of Figure 4A in which portions of the poly-silicon layer 58 and the photo-resist layer 60 have been removed through dry etching. Dry etching the poly-silicon layer 60 forms a pattern in the poly-silicon layer 58 as determined by the pattern originally formed in the photo-resist layer 60.
Figure 4C shows the structure of Figure 4B in which the second silicon-oxide layer 56 has been wet oxide isotopically etched. An aperture 64 is formed in the siliconoxide layer as determined by the pattern of the poly-silicon layer 58. The aperture 64 encircles a sacrificial bump 66. The sacrificial bump 66 is located where the ink jet nozzle is to be formed. The sacrificial bump 66 include positively sloped edges 68 which define the negatively sloped edges ofthe ink jet nozzle to be formed.
Figure 4D shows the structure of Figure 4C in which the poly-silicon layer 58 has been etched away, and a silicon-nitride (Si3N4) or silicon-carbide (SiC) layer 70 has been deposited over the second silicon-oxide layer 56.
Figure 4E shows the structure of Figure 4D in which a third silicon-oxide layer 72 has been deposited over the silicon-nitride layer 70.
Figure 4F shows the structure ofFigure 4E in which the third silicon-oxide layer 72 has been chemically-mechanically polished (CMP). The third silicon-oxide layer 72 is chemically-mechanically polished down to the silicon-nitride or silicon-carbide layer 70 forming an orifice layer 74. The orifice layer 74 includes the second silicon-oxide layer 56, the silicon-nitride or silicon-carbide layer 70, and portions of the third silicon-oxide layer 72.
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Figure 4G shows the structure of Figure 4F in which a protective layer 75 and second photo-resist layer 76 have been deposited over the orifice layer 74. The protective layer 75 and the second photo-resist 76 include an opening 78 aligned with the sacrificial bump 66. A portion of the silicon-nitride layer 70 which is aligned with the opening 78 is nitride dry etched down to the silicon-oxide layer 56 leaving the sacrificial bump 66 exposed. The protective layer is either a silicon-carbide and a silicon-nitride. Silicon- carbide may be the preferred protective layer 75 material because silicon-carbide provides a very hard surface.
Figure 4H shows the structure of Figure 4G in which the exposed sacrificial bump 66 and the second photo-resist layer 76 have been removed through wet oxide etching.
Removing the sacrificial bump 66 results in the formation of an inkjet nozzle 80 in the orifice layer 74.
Figures 5A, 5B show alternative processing steps to the processing steps shown in Figures 4A, 4B, 4C. First, a structure as shown in Figure 5A is formed which includes a substrate 50, a first silicon-oxide (Si02) layer 52 and tantalum (Ta) layer 54. A second silicon-oxide layer 56 is deposited over the Ta layer 54. Finally, a photo-resist layer 60 is deposited over the silicon-oxide layer 56. The photo-resist layer 60 is patterned so that an island 62 of photo-resist is located where an ink jet nozzle is to be formed over the substrate 50. The photo-resist layer 60 pattern can be formed by a standard lithography process.
Figure 5B shows the structure of Figure SA in which the second silicon-oxide layer 56 has been dry etched. An aperture 64 is formed in the silicon-oxide layer as determined by the pattern of the photo-resist layer 60. The aperture 64 encircles a sacrificial bump 66. The sacrificial bump 66 is located where the ink jet nozzle is to be formed. The sacrificial bump 66 include positively sloped edges 68 which define the negatively sloped edges of the ink jet nozzle to be formed.
<Desc/Clms Page number 9>
Subsequent processing steps to the structure shown in Figure 5B are the same as those shown in Figures 4D-4H.
Although specific embodiments of the invention have been described and illustrated, the invention is not to be limited to the specific forms or arrangements ofparts so described and illustrated. The invention is limited only by the claims.
Claims (11)
1. A method of forming an ink jet nozzle over an ink energizing element on an upper surface of a substrate, the method comprising: creating a positive sloped sacrificial oxide bump on the surface; depositing an etch stop layer and an oxide layer over the surface and the sacrificial bump; polishing the oxide to the etch stop layer forming an orifice layer; creating an opening in the orifice layer over the sacrificial oxide bump; and removing the sacrificial oxide bump.
2. The method of forming an ink jet nozzle as recited in claim 1, wherein the step of creating a sacrificial bump comprises: depositing a silicon-oxide layer over the upper surface of the substrate; depositing a hard mask layer over the silicon-oxide layer; removing a pattern of the hard mask layer so that an island of hard mask layer is located over the ink energizing element; wet oxide isotropic etching the silicon-oxide forming apertures in the silicon-oxide where the hard mask layer has been removed; and etching the remaining hard mask layer and any residual resist.
3. The method of forming an ink jet nozzle as recited in claim 1, wherein the step of creating a sacrificial bump comprises: depositing a hard mask layer over the silicon layer; removing a pattern of the hard mask layer so that an island of hard mask layer is located over the ink energizing element; dry etching the silicon-oxide forming apertures in the silicon-oxide where the hard mask layer has been removed; and etching the remaining hard mask layer and any residual resist.
4. The method of forming an ink jet nozzle as recited in claim 2, wherein the step of removing a pattern of the hard mask layer comprises:
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depositing a resist layer over the hard mask layer so that an island of resist is located over the ink energizing element; and dry etching the hard mask layer so that the hard mask layer is removed where the resist layer does not exist.
5. The method of forming an ink jet nozzle as recited in claim 2, wherein the step of depositing a hard mask layer comprises depositing a poly-silicon layer.
6. The method of forming an ink jet nozzle as recited in claim 1, wherein the step of depositing an etch layer comprises depositing a nitride layer.
7. The method of forming an ink jet nozzle as recited in claim 1, wherein the step of depositing an etch layer comprises depositing a carbide layer.
8. The method of forming an ink jet nozzle as recited in claim 1, wherein the step of polishing the oxide to the etch stop layer comprises chemically-mechanically polishing the oxide layer to the etch stop layer.
9. The method of forming an ink jet nozzle as recited in claim 1, wherein the step of removing the sacrificial oxide bump comprises: forming a hole in the orifice layer exposing the sacrificial oxide bump; and wet etching the sacrificial oxide bump forming the ink jet nozzle.
10. The method of forming an ink jet nozzle as recited in claim 9, wherein the step of forming a hole in the orifice layer comprises: depositing a photo-resist pattern over the orifice layer; and dry etching the orifice layer forming a hole where the photo-resist does not exist.
11. A method of forming an inkjet nozzle substantially as herein described with reference to each of the accompanying drawings.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/005,319 US6154234A (en) | 1998-01-09 | 1998-01-09 | Monolithic ink jet nozzle formed from an oxide and nitride composition |
| GB9900441A GB2333065B (en) | 1998-01-09 | 1999-01-08 | Monolithic ink jet nozzle with an oxide-nitride or oxide-carbide composite orifice layer |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB0122864D0 GB0122864D0 (en) | 2001-11-14 |
| GB2364276A true GB2364276A (en) | 2002-01-23 |
| GB2364276B GB2364276B (en) | 2002-03-06 |
Family
ID=26314967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0122864A Expired - Fee Related GB2364276B (en) | 1998-01-09 | 1999-01-08 | Method of forming ink jet nozzles |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2364276B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5016024A (en) * | 1990-01-09 | 1991-05-14 | Hewlett-Packard Company | Integral ink jet print head |
-
1999
- 1999-01-08 GB GB0122864A patent/GB2364276B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5016024A (en) * | 1990-01-09 | 1991-05-14 | Hewlett-Packard Company | Integral ink jet print head |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2364276B (en) | 2002-03-06 |
| GB0122864D0 (en) | 2001-11-14 |
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| Date | Code | Title | Description |
|---|---|---|---|
| 732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20120329 AND 20120404 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20150108 |