GB2354342B - A phase shift mask - Google Patents

A phase shift mask

Info

Publication number
GB2354342B
GB2354342B GB0020497A GB0020497A GB2354342B GB 2354342 B GB2354342 B GB 2354342B GB 0020497 A GB0020497 A GB 0020497A GB 0020497 A GB0020497 A GB 0020497A GB 2354342 B GB2354342 B GB 2354342B
Authority
GB
United Kingdom
Prior art keywords
phase shift
shift mask
mask
phase
shift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB0020497A
Other versions
GB2354342A (en
GB0020497D0 (en
Inventor
Jo-Hyun Park
Kwang-Soo No
Eun-Ah Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of GB0020497D0 publication Critical patent/GB0020497D0/en
Publication of GB2354342A publication Critical patent/GB2354342A/en
Application granted granted Critical
Publication of GB2354342B publication Critical patent/GB2354342B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
GB0020497A 1999-09-18 2000-08-18 A phase shift mask Expired - Lifetime GB2354342B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990040288A KR20010028191A (en) 1999-09-18 1999-09-18 Phase shift mask using CrAlON as a phase shift material and manufacturing method thereof

Publications (3)

Publication Number Publication Date
GB0020497D0 GB0020497D0 (en) 2000-10-11
GB2354342A GB2354342A (en) 2001-03-21
GB2354342B true GB2354342B (en) 2003-07-16

Family

ID=19612179

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0020497A Expired - Lifetime GB2354342B (en) 1999-09-18 2000-08-18 A phase shift mask

Country Status (7)

Country Link
US (1) US6387573B1 (en)
JP (1) JP2001109129A (en)
KR (1) KR20010028191A (en)
DE (1) DE10046067A1 (en)
FR (1) FR2798739A1 (en)
GB (1) GB2354342B (en)
TW (1) TW417041B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4043774B2 (en) * 2001-12-11 2008-02-06 大日本印刷株式会社 Data correction method for phase shift mask
DE10208785B4 (en) * 2002-02-28 2008-01-31 Qimonda Ag Lithography process for photomask production by electron beam lithography
KR100474012B1 (en) * 2002-06-08 2005-03-10 주식회사 피케이엘 Method for manufacturing phase-shift mask
GB0215243D0 (en) * 2002-07-02 2002-08-14 Koninkl Philips Electronics Nv Mask and manufacturing method using mask
US6855463B2 (en) * 2002-08-27 2005-02-15 Photronics, Inc. Photomask having an intermediate inspection film layer
WO2005024518A2 (en) * 2003-09-05 2005-03-17 Schott Ag Phase shift mask blank with increased uniformity
JP4525893B2 (en) * 2003-10-24 2010-08-18 信越化学工業株式会社 Phase shift mask blank, phase shift mask and pattern transfer method
JP2005234209A (en) * 2004-02-19 2005-09-02 Shin Etsu Chem Co Ltd Method for producing halftone phase shift mask blank, halftone phase shift mask blank, halftone phase shift mask and method for transferring pattern
JP5588633B2 (en) * 2009-06-30 2014-09-10 アルバック成膜株式会社 Phase shift mask manufacturing method, flat panel display manufacturing method, and phase shift mask
KR20120098017A (en) * 2011-02-28 2012-09-05 에스케이하이닉스 주식회사 Method for fabricating semiconductor device
KR102487988B1 (en) 2020-10-23 2023-01-12 인하대학교 산학협력단 Method and Apparatus for Determining Optical Constant of Attenuated Phase Shifting Layer for the Fabrication Processes of Attenuated Phase-Shift Mask Blank using the Measured and the Calculated Transmittance, Surface Reflectance and Backside Reflectance at a Wavelength Region of the Light Source of the Exposure Process
KR20220098556A (en) 2021-01-04 2022-07-12 인하대학교 산학협력단 Transition-metal-composition attenuated phase shift mask blanks including thin attenuated phase shift layers consist of transition-metal-compositions and their fabrication method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536604A (en) * 1992-07-17 1996-07-16 Kabushiki Kaisha Toshiba Exposure mask

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3064769B2 (en) 1992-11-21 2000-07-12 アルバック成膜株式会社 PHASE SHIFT MASK, ITS MANUFACTURING METHOD, AND EXPOSURE METHOD USING THE PHASE SHIFT MASK
KR100627210B1 (en) * 1995-08-04 2006-12-01 다이니폰 인사츠 가부시키가이샤 Phase Shift Mask
KR100230376B1 (en) * 1996-10-16 1999-11-15 윤종용 Phase shift mask and manufacturing method thereof
JP3417798B2 (en) * 1997-05-19 2003-06-16 株式会社東芝 Exposure mask

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5536604A (en) * 1992-07-17 1996-07-16 Kabushiki Kaisha Toshiba Exposure mask

Also Published As

Publication number Publication date
JP2001109129A (en) 2001-04-20
GB2354342A (en) 2001-03-21
US6387573B1 (en) 2002-05-14
TW417041B (en) 2001-01-01
KR20010028191A (en) 2001-04-06
DE10046067A1 (en) 2001-05-03
FR2798739A1 (en) 2001-03-23
GB0020497D0 (en) 2000-10-11

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20200817