GB2351860B - Method of controlling the switching DI/DT and DV/DT of a mos-gated power transistor - Google Patents

Method of controlling the switching DI/DT and DV/DT of a mos-gated power transistor

Info

Publication number
GB2351860B
GB2351860B GB0025680A GB0025680A GB2351860B GB 2351860 B GB2351860 B GB 2351860B GB 0025680 A GB0025680 A GB 0025680A GB 0025680 A GB0025680 A GB 0025680A GB 2351860 B GB2351860 B GB 2351860B
Authority
GB
United Kingdom
Prior art keywords
mos
switching
controlling
power transistor
gated power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0025680A
Other versions
GB0025680D0 (en
GB2351860A (en
Inventor
Stefano Clemente
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Priority claimed from GB9722243A external-priority patent/GB2318467B/en
Publication of GB0025680D0 publication Critical patent/GB0025680D0/en
Publication of GB2351860A publication Critical patent/GB2351860A/en
Application granted granted Critical
Publication of GB2351860B publication Critical patent/GB2351860B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/12—Measuring rate of change
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Conversion In General (AREA)
GB0025680A 1996-10-21 1997-10-21 Method of controlling the switching DI/DT and DV/DT of a mos-gated power transistor Expired - Fee Related GB2351860B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2884096P 1996-10-21 1996-10-21
GB9722243A GB2318467B (en) 1996-10-21 1997-10-21 Method of controlling the switching di/dt and dv/dt of a mos-gated power transistor

Publications (3)

Publication Number Publication Date
GB0025680D0 GB0025680D0 (en) 2000-12-06
GB2351860A GB2351860A (en) 2001-01-10
GB2351860B true GB2351860B (en) 2001-03-21

Family

ID=26312463

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0025680A Expired - Fee Related GB2351860B (en) 1996-10-21 1997-10-21 Method of controlling the switching DI/DT and DV/DT of a mos-gated power transistor

Country Status (1)

Country Link
GB (1) GB2351860B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101454979B (en) * 2006-05-29 2013-03-27 皇家飞利浦电子股份有限公司 Switching circuit arrangement
WO2007138509A2 (en) 2006-05-29 2007-12-06 Koninklijke Philips Electronics N.V. Switching circuit arrangement
CN106226673B (en) * 2016-09-12 2023-02-17 河北工业大学 Combined type fault automatic detection device of IGBT
CN111527684B (en) 2018-07-17 2023-09-22 富士电机株式会社 Power module with built-in driving circuit
EP4063878A1 (en) 2021-03-25 2022-09-28 Nxp B.V. Integrated circuit and associated method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947063A (en) * 1987-10-09 1990-08-07 Western Digital Corporation Method and apparatus for reducing transient noise in integrated circuits
EP0493185A1 (en) * 1990-12-27 1992-07-01 Automobiles Peugeot Control circuit for a force commutated power transistor
GB2257854A (en) * 1991-07-16 1993-01-20 Motorola Inc Drive circuits
EP0645889A1 (en) * 1993-09-13 1995-03-29 Siemens Aktiengesellschaft Method and device for limiting the rate of current decrease at swith-off of semiconductor power switches with MOS control imput

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4947063A (en) * 1987-10-09 1990-08-07 Western Digital Corporation Method and apparatus for reducing transient noise in integrated circuits
EP0493185A1 (en) * 1990-12-27 1992-07-01 Automobiles Peugeot Control circuit for a force commutated power transistor
GB2257854A (en) * 1991-07-16 1993-01-20 Motorola Inc Drive circuits
EP0645889A1 (en) * 1993-09-13 1995-03-29 Siemens Aktiengesellschaft Method and device for limiting the rate of current decrease at swith-off of semiconductor power switches with MOS control imput

Also Published As

Publication number Publication date
GB0025680D0 (en) 2000-12-06
GB2351860A (en) 2001-01-10

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20041021