GB2326276A - Dimensionally reducing patterns for making I.C.s - Google Patents

Dimensionally reducing patterns for making I.C.s Download PDF

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Publication number
GB2326276A
GB2326276A GB9712001A GB9712001A GB2326276A GB 2326276 A GB2326276 A GB 2326276A GB 9712001 A GB9712001 A GB 9712001A GB 9712001 A GB9712001 A GB 9712001A GB 2326276 A GB2326276 A GB 2326276A
Authority
GB
United Kingdom
Prior art keywords
pattern
shrink
making
patterns
shrinking
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB9712001A
Other versions
GB9712001D0 (en
Inventor
Timothy Michael William Fryer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to GB9712001A priority Critical patent/GB2326276A/en
Publication of GB9712001D0 publication Critical patent/GB9712001D0/en
Publication of GB2326276A publication Critical patent/GB2326276A/en
Withdrawn legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M5/00—Duplicating or marking methods; Sheet materials for use therein
    • B41M5/0005—Enlarging or reduction of graphic information on a support by stretching or contracting the support, optionally in combination with the recording
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0338—Process specially adapted to improve the resolution of the mask

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)

Abstract

A pattern, for example in a photoresist for making an I.C. is dimensionally reduced by applying the pattern to a surface which is subsequently shrunk. The pattern may be applied to a stretched elastic sheet which is then released. Memory alloys or heat shrinkable plastics may alternatively by used.

Description

Pattern
The subject of the present invention is a means of prsJducing small patterns.
To produce integrated circuits it is necessary to etch very small designs on a silicon substrate. This is usually done by the photoresist process, in which an image of a template is projected onto the substrate and developed photochemically, forming a mask on the substrate. The substrate is then etched, with the masked surface being protected from the etchant, thereby enabling a pattern to be etched onto the surface.
This process is able to produce very fine designs. However, the resolution of the design is ultimately limited by diffraction, which prevents it being less than the wavelength of the radiation used to project the image. Whilst it is theoretically possible to produce ever smaller patterns by using radiation of shorter wavelength, in practice t.his is not feasible. Below 1()0() angstroms radiation begins to become more like a stream of particles and less like a wave. It cannot easily be reflected or refracted and it vmdergoes indiscriminate absorption. Such radiation is not readily collimated into the beam necessary for projecting the image.
The ptlrpose of the present invention is to produce patterns that are smaller than those that can be produced using current technology.
Nature Qf the Process The essential feature of the process is as follows.
A pattern is applied to a surface or is incorporated in a mass of material. The surface (or mass of material) is then made to shrink thereby causing the pattern to shrink. The pattern may either be used as it is or it may be transferred to another surface.
The pattern may be made by adding material to the surface, by removing material from the surface or by the simultaneous addition and removal of material to and from the surface.
The pattern may be applied to the surface by all the methods of the current state of the art. Thus it may be applied by the photoresist method, which is the preferred method. It may be applied mechanically, by a cutting process, for instance.
Contact processes, for instance, printing or transfer processes may be used. A stream of particles, which may be neutral or charged, in a vacuum may be used to produce the pattern. C)ther methods may be used.
Various methods may be used to shrink the surface.
In the preferred mode, the pattern is applied to a sheet of stretched elastic material. The sheet is then released, allowing the sheet. to regain its original shape thereby causing the pattern to shrink. Memory alloys and heat shrinkable plastics may also be used. For these two materials the surface need not be under tension when the pattern is applied. Shrinking is induced by heating it.
In an alternative mode, mecanical deformation is used to shrink the pattern.
Here a slug of material is drawn or extruded, thereby causing it to become thinner and so shrinking the pattern, which is preferrably on a surface which is at right angles to the direction of drawing or extrusion.
The pattern may be on the surface of the material, it may be within the material or it may be within the material and extend to a surface or surfaces.
Whilst it is preferred that the pattern is deposited on a solid material, other phases may be used. Thus, it may be deposited onto the surface of a viscous liquid which is then drawn or extruded.
Various means may be used to transfer the shninken pattern. The methods suggested for creating the pattern on the surface may be used. The preferred method is the photoresist process.
For such a process, the surface on which the pattern has been deposited should be permeable to the radiation used. If not t.hen it should be removed, by a chemical process, for instance, leaving the pattern. To minimise the effects of diffraction the pattern should be as close as possible to the surface that is to receive it.
Alternatively, instead of light an electron beam may be used.
This has the advantage of a lower wavelength, resulting in less diffraction The shrinking process may be repeated tmtil a pattern of the desired size is obtained.
,Applicatlons The principal application of the current invention is in the product of integrated circuits. Other appplications are the production of fine mesh for use in electrodes in fuel cells or for use as a reflecting material.It may also be used in nanotechnology to make templates for the production of components or systems. It may have other applications.

Claims (1)

  1. Pattern Miniaturiser
    Claims 1) A method of shrinking patterns by applying them to a surface which is subsequently shrink.
    2) A method of shrinking patterns by depositing them within a mass of material which is subsequently shrv 3) A process as claimed in claims 1 and 2 . where the pattern is applied to a solid medium.
    4) A process as claimed in claims 1 and 2, where the pattern is applied to a liquid medium.
    5) A process as described in claims 1, 2, 3 and 4 where the pattern is applied to a stretched elastic material which is subsequently shrink.
    6) A process as described in claims 1, 2, 3 and 4 where the pattern is applied to a memory alloy which is then caused to shrink.
    7) A process as described in claims 1, 2, 3 and 4 where t.he pattern is applied to a heat shrinkable plastic which is then caused to shrink.
    8) A process as described in claims 1, 2, 3, 4, 5, 6.. and 7 where the medium holding the design is shrink by mechanical deformation.
    9) A process as described in claims 1, 3, 4, 5, 6, 7 and 8 where the pattern is formed by the removal of material from the surface.
    10) A process as described in claims 1 3, 4, 5, 6. 7 and 8 where the pattern is formed by the addition of material to the surface.
    11) A process as described in claims 1, 3, 4, 5. 6, 7 and 8 where the pattern is formed by the addition and removal of material from and to the surface.
    12) A process as described in claims 1 to 11 where the shrinking process is repeated.
    13) A process as described in claims 1 to 12 used in the mantlfacture of integrated circuits.
GB9712001A 1997-06-11 1997-06-11 Dimensionally reducing patterns for making I.C.s Withdrawn GB2326276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9712001A GB2326276A (en) 1997-06-11 1997-06-11 Dimensionally reducing patterns for making I.C.s

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9712001A GB2326276A (en) 1997-06-11 1997-06-11 Dimensionally reducing patterns for making I.C.s

Publications (2)

Publication Number Publication Date
GB9712001D0 GB9712001D0 (en) 1997-08-06
GB2326276A true GB2326276A (en) 1998-12-16

Family

ID=10813874

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9712001A Withdrawn GB2326276A (en) 1997-06-11 1997-06-11 Dimensionally reducing patterns for making I.C.s

Country Status (1)

Country Link
GB (1) GB2326276A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029845A2 (en) * 2005-09-06 2007-03-15 Canon Kabushiki Kaisha Method and device for manufacturing structure having pattern, and method for manufacturing mold
WO2008024643A2 (en) * 2006-08-11 2008-02-28 Battelle Memorial Institute Patterning non-planar surfaces
JP2012099835A (en) * 2005-09-06 2012-05-24 Canon Inc Method of manufacturing structure having pattern

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504793A (en) * 1995-02-17 1996-04-02 Loral Federal Systems Company Magnification correction for 1-X proximity X-Ray lithography

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5504793A (en) * 1995-02-17 1996-04-02 Loral Federal Systems Company Magnification correction for 1-X proximity X-Ray lithography

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007029845A2 (en) * 2005-09-06 2007-03-15 Canon Kabushiki Kaisha Method and device for manufacturing structure having pattern, and method for manufacturing mold
WO2007029845A3 (en) * 2005-09-06 2007-08-30 Canon Kk Method and device for manufacturing structure having pattern, and method for manufacturing mold
JP2007276441A (en) * 2005-09-06 2007-10-25 Canon Inc Method and apparatus for manufacturing structure having pattern, and method for manufacturing mold
JP2012099835A (en) * 2005-09-06 2012-05-24 Canon Inc Method of manufacturing structure having pattern
US8293125B2 (en) 2005-09-06 2012-10-23 Canon Kabushiki Kaisha Method and device for manufacturing structure having pattern, and method for manufacturing mold
WO2008024643A2 (en) * 2006-08-11 2008-02-28 Battelle Memorial Institute Patterning non-planar surfaces
WO2008024643A3 (en) * 2006-08-11 2008-09-04 Battelle Memorial Institute Patterning non-planar surfaces
US8017308B2 (en) 2006-08-11 2011-09-13 Battelle Memorial Institute Patterning non-planar surfaces
US8891065B2 (en) 2006-08-11 2014-11-18 Battelle Memorial Institute Patterning non-planar surfaces

Also Published As

Publication number Publication date
GB9712001D0 (en) 1997-08-06

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