GB2320363B - Semiconductor switching device - Google Patents
Semiconductor switching deviceInfo
- Publication number
- GB2320363B GB2320363B GB9719607A GB9719607A GB2320363B GB 2320363 B GB2320363 B GB 2320363B GB 9719607 A GB9719607 A GB 9719607A GB 9719607 A GB9719607 A GB 9719607A GB 2320363 B GB2320363 B GB 2320363B
- Authority
- GB
- United Kingdom
- Prior art keywords
- switching device
- semiconductor switching
- semiconductor
- switching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9719607A GB2320363B (en) | 1996-12-12 | 1997-09-15 | Semiconductor switching device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9625839.7A GB9625839D0 (en) | 1996-12-12 | 1996-12-12 | Semiconductor switching devices |
GB9719607A GB2320363B (en) | 1996-12-12 | 1997-09-15 | Semiconductor switching device |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9719607D0 GB9719607D0 (en) | 1997-11-19 |
GB2320363A GB2320363A (en) | 1998-06-17 |
GB2320363B true GB2320363B (en) | 2001-04-18 |
Family
ID=26310612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9719607A Expired - Fee Related GB2320363B (en) | 1996-12-12 | 1997-09-15 | Semiconductor switching device |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2320363B (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0485059A2 (en) * | 1990-09-28 | 1992-05-13 | Kabushiki Kaisha Toshiba | Semiconductor device including a pin-diode having high breakdown voltage |
US5414290A (en) * | 1993-05-07 | 1995-05-09 | Abb Management Ag | IGBT with self-aligning cathode pattern and method for producing it |
-
1997
- 1997-09-15 GB GB9719607A patent/GB2320363B/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0485059A2 (en) * | 1990-09-28 | 1992-05-13 | Kabushiki Kaisha Toshiba | Semiconductor device including a pin-diode having high breakdown voltage |
US5414290A (en) * | 1993-05-07 | 1995-05-09 | Abb Management Ag | IGBT with self-aligning cathode pattern and method for producing it |
Also Published As
Publication number | Publication date |
---|---|
GB2320363A (en) | 1998-06-17 |
GB9719607D0 (en) | 1997-11-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2309336B (en) | Semiconductor device | |
GB2316208B (en) | Semiconductor device | |
EP0951071A4 (en) | Semiconductor device | |
GB2309589B (en) | Semiconductor device | |
GB2316533B (en) | Semiconductor device | |
SG63690A1 (en) | Semiconductor device | |
GB2310758B (en) | Semiconductor device | |
EP0836226A4 (en) | Semiconductor device | |
SG54501A1 (en) | Semiconductor device | |
GB9713846D0 (en) | Semiconductor device | |
EP0855719A4 (en) | Semiconductor device | |
GB9625839D0 (en) | Semiconductor switching devices | |
GB9604764D0 (en) | Semiconductor device fabrication | |
SG68622A1 (en) | Semiconductor device | |
GB2285882B (en) | Semiconductor switching devices | |
GB2355585B (en) | Semiconductor device | |
GB2320363B (en) | Semiconductor switching device | |
GB2310317B (en) | Semiconductor device | |
EP0855740A4 (en) | Semiconductor device | |
GB2355328B (en) | Semiconductor device | |
GB2314673B (en) | Semiconductor device | |
GB9609834D0 (en) | Semiconductor device | |
GB9623445D0 (en) | Semiconductor device | |
GB9610447D0 (en) | Semiconductor device | |
GB9609873D0 (en) | Semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20030915 |