GB2294584B - Improvements in or relating to transistors - Google Patents

Improvements in or relating to transistors

Info

Publication number
GB2294584B
GB2294584B GB9421789A GB9421789A GB2294584B GB 2294584 B GB2294584 B GB 2294584B GB 9421789 A GB9421789 A GB 9421789A GB 9421789 A GB9421789 A GB 9421789A GB 2294584 B GB2294584 B GB 2294584B
Authority
GB
United Kingdom
Prior art keywords
transistors
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9421789A
Other versions
GB2294584A (en
Inventor
David Arthur Garnham
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Power Innovations Ltd
Texas Instruments Ltd
Original Assignee
Power Innovations Ltd
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Power Innovations Ltd, Texas Instruments Ltd filed Critical Power Innovations Ltd
Priority to GB9421789A priority Critical patent/GB2294584B/en
Publication of GB2294584A publication Critical patent/GB2294584A/en
Application granted granted Critical
Publication of GB2294584B publication Critical patent/GB2294584B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
GB9421789A 1994-10-28 1994-10-28 Improvements in or relating to transistors Expired - Fee Related GB2294584B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9421789A GB2294584B (en) 1994-10-28 1994-10-28 Improvements in or relating to transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9421789A GB2294584B (en) 1994-10-28 1994-10-28 Improvements in or relating to transistors

Publications (2)

Publication Number Publication Date
GB2294584A GB2294584A (en) 1996-05-01
GB2294584B true GB2294584B (en) 1998-08-05

Family

ID=10763571

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9421789A Expired - Fee Related GB2294584B (en) 1994-10-28 1994-10-28 Improvements in or relating to transistors

Country Status (1)

Country Link
GB (1) GB2294584B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431480B1 (en) * 2015-03-27 2016-08-30 Texas Instruments Incorporated Diluted drift layer with variable stripe widths for power transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1206202A (en) * 1967-04-04 1970-09-23 Itt Junction transistors

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1206202A (en) * 1967-04-04 1970-09-23 Itt Junction transistors

Also Published As

Publication number Publication date
GB2294584A (en) 1996-05-01

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee