GB2290307A - Process for preparing a superconductive YBa2CU3O7-x film - Google Patents
Process for preparing a superconductive YBa2CU3O7-x film Download PDFInfo
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- GB2290307A GB2290307A GB9409534A GB9409534A GB2290307A GB 2290307 A GB2290307 A GB 2290307A GB 9409534 A GB9409534 A GB 9409534A GB 9409534 A GB9409534 A GB 9409534A GB 2290307 A GB2290307 A GB 2290307A
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- film
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- ybco
- silver
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 16
- 238000005979 thermal decomposition reaction Methods 0.000 claims abstract description 16
- 238000009792 diffusion process Methods 0.000 claims abstract description 15
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 6
- 238000000137 annealing Methods 0.000 claims abstract description 5
- 238000005245 sintering Methods 0.000 claims abstract description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 42
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 238000005036 potential barrier Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000007769 metal material Substances 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 239000012071 phase Substances 0.000 description 28
- 239000010949 copper Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000003746 solid phase reaction Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910002244 LaAlO3 Inorganic materials 0.000 description 2
- 229910002370 SrTiO3 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical group Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000657 niobium-tin Inorganic materials 0.000 description 1
- WWZKQHOCKIZLMA-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O WWZKQHOCKIZLMA-UHFFFAOYSA-N 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0548—Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
A process for preparing a superconductive YBa2CU3O7-x (YBCO) film is provided by forming a Y2BaCuO5 (211) film by thermal decomposition of a coating using metal-organic compounds, forming the (035) or (037) phase comprising an oxide or a mixture of an oxide and a carbonate, if necessary, with the addition of silver to thereby produce a two-layer structure of the (211) - (035) phases, subjecting the structure to heat treatment to cause diffusion reaction and sintering, and subjecting the resultant YBa2CU3Ox film to annealing.
Description
PROCESS FOR PREPARING
A SUPERCONDUCTIVE YBa2Cu3 07-X FILM
This invention relates to a process for preparing a superconductive YBCO film.
It is known that highly grain-oriented oxide superconductors exhibit low barriers to electrical conductivity in the grain boundaries, thus enabling a high current density. As an effective process for preparing a highly oriented film, it has been proposed to form a film on a single crystal substrate by means of epitaxial growth with the film having lattice constants (a, b and c) close to those of the substrate, and a grain-orientated structure in a-axis, b-axis and c-axis directions. Epitaxial growth may be achieved by vapor deposition methods such as laser ablation deposition and CVD.Using such methods, YBCO films having critical current densities (Jc) of at least 106 A/cm2 (77K, OT) were actually formed on single crystal substrates such as MgO, SrTiO3 and LaAlO3. They are, however, formed only for use in small electronic components because single crystal substrates are expensive and films cannot be fabricated over large areas. There has, therefore, been a need to provide a technique capable of forming a high quality film even on polycrystalline or metallic substrates for a variety of industrial applications.
The use of the above mentioned vapor deposition methods to form a YBCO film on a polycrystalline substrate 4 2 lowers its c to a level as low as 104 A/cm2. Japanese Patent Public Disclosure (kokai) No. 64-65003 discloses a thermal decomposition coating method. The method is capable of preparing a YBCO film on a single crystal substrate with the YBCO film having a Jc of at least 1 x 106 A/cm2, and therefore is expected to be widely used in future applications. However, the films formed on polycrystalline YSZ or silver substrates using such a method results in an insufficient c-axis orientation and a Jc of less than 1000 A/cm2. Further, a method which involves partial melting to enhance grain orientation and promote grain growth has been studied.In this method, films of inferior quality having low critical current densities (Jc) of a few thousand A/cm2 have been produced, because they are required to be heated at temperatures of 970 CC or more, thus causing problems such as reaction between film and substrate, the occurrence of cracks due to shrinkage during solidification, the incidence of impurities, etc.
A method using a diffusion reaction has long been known as an effective means of enhancing grain orientation.
Wires of superconductive materials such as NbTi and Nb3Sn have been prepared using a diffusion reaction. The preparation of YBCO films by the diffusion reaction method has been proposed by Tachikawa et al. of Tokai University.
The proposed process comprises coating a paste made of a powdered mixture of the (035) oxide and silver on a porous sintered Y2BaCuO5 substrate, and subjecting it to a hightemperature reaction to form a YBCO film on the remaining unreacted (211) phase of the substrate. The resultant YBCO film was relatively dense and grains thereof were orientated toward the c-axis in the neighborhood of the interface.
Further, the film exhibited an improvement in joe Jc in comparison with that prepared in accordance with a conventional method. Such a relatively dense film shows that a slight liquid phase reaction occurred during sintering of the greenbody. However, films formed in this way still suffered from weak link problems at grain boundaries and the resulting sintered bodies exhibited of of less than 5000 A/cm2. In addition, because the preparation process requires the use of the (211) phase as a substrate, its industrial application is limited.
For example, flexible and conductive metals, which are the most preferred substrate materials for superconductive wires or tapes, and Awl203, MgO and YSZ, which are preferred for microwave devices due to their small dielectric loss, are not suitable as a substrate material in this process.
This is because a relatively dense sintered layer of the (211) phase can only be obtained by a high-temperature treatment of at least 9500C, which will cause problems such as reaction between the substrate and the (211) layer, when this (211) layer is prepared on one of these preferred substrate materials, Further, cracks will develop in the (211) phase due to the thermal expansion difference between (211) and the substrate. Furthermore, the diffusion reaction between (211) and (035) can occur upon high-temperature heat treatment of more than 850 CC over an extended period of time in air or oxygen. Because
YBCO produced by this reaction is relatively reactive, it was difficult to prevent the occurrence of a reaction between the YBCO film and the substrate.For the aforementioned reasons, it was necessary to use a sintered substrate of the (211) phase in this method.
According to the present invention, a process is described for preparing a superconductive YBa2Cu3 07-x (YBCO) film on a substrate comprising the steps of: a. forming a Y2BaCuO5 (211) film on a substrate by
thermal decomposition of a coating using metal-organic
compounds, b. forming on this (211) layer a film of the (035) or (037)
phase or a phase composition close thereto comprising
an oxide or a mixture of an oxide and a carbonate,
if necessary, with the addition of silver to thereby
produce a two-layered structure, c. the ratio of weight or thickness of the (211) layer
and the (035) or (037) layer should be controlled
to have the same molar volume and the react to yield
a uniform YBCO film in accordance with the formula
(211) + (035) = 2 (123); deviations from this precise
ratio can be used to control the final composition
of the film, d. alternatively, a three-layer structure can be formed
comprising 211-Ag-035, e. subjecting the resultant two or three-layered structure
to heat treatment under a partial oxygen pressure of 1 x 10-5 5 to 1 x 10 1 atm at a temperature of 650 to 930"C to cause a diffusion reaction and sintering to
thereby produce a YBa2Cu 30x film, and f. subjecting the YBa2Cu30x film to annealing in an oxygen
atmosphere at a temperature of 350 to 900 CC to cause
oxidation of the film.
The process of the invention is characterized by a film forming process and heat-treatment conditions and is capable of solving the above-mentioned problems. The process requires a combination of a diffusion reaction and thermal decomposition of a coating using metal-organic compounds, thus making it possible to prepare a uniform YBCO film of highly oriented grains with a high Jc . When thermal decomposition is employed, neither a single crystal substrate nor a vacuum chamber is required. Accordingly, films having a large area or continuous length can be easily prepared. That is to say, the invention has various applications such as in superconductive films for electronic devices, superconductive wires, and superconductive magnetic tapes and coils.
The invention will now be described by way of example and with reference to the accompanying drawings in which:
Fig. 1 shows a pattern of X-ray diffraction (XRD) of a YBCO film prepared on a silver substrate prepared in accordance with the invention;
Figs. 2 and 3 show the temperature dependence of magnetic susceptibility of YBCO films (including silver) prepared on a YSZ substrate in accordance with the invention;
Fig. 4 shows the effect of silver-addition to the (035) phase with silver being added within the range of
O to 1.2 molar ratio;
Fig. 5 shows measurements of critical current densities (Jc) of a YBCO film prepared by means of the invention; and
Fig. 6 shows the temperature dependence of magnetic susceptibility for a two-layered structure of the (211) (035) phases and a three-layered structure of the (211)
Ag - (035) phases.
In the process of the invention, a film of the (211) phase ranging in thickness from 0.1 to 10 p is formed on an appropriate substrate such as YSZ, MgO, BaZrO31 SrTiO3 LaAlO3, Awl203, or Ag- or Ni-based alloys which are heatresistant and less reactive to YBCO using thermal decomposition of a metal-organic compound.
In the thermal decomposition method, materials such as metal-organic acid salts, alcoxides and acetylacetonates are mixed in such amounts that the molar ratio of Y:Ba:Cu is 2:1:1 and the mixture is dissolved in a solvent such as toluene to prepare a solution. Next, the solution is coated on a substrate, dried, and heated up to a temperature of 300 to 500"C to cause thermal decomposition of the metal-organic compounds and combustion of the organic component to remove them. As a result, a film comprising a mixture of Y2031 BaC03 and CuO is obtained. After this process has been repeated to gain a desired thickness, a film thus obtained is subjected to heat-treatment at 800 to 950"C to allow a solid-phase reaction between the components to thereby yield the (211) phase.Since the thermal decomposition method is capable of producing a film of dense fine grains, there occurs a solid-phase reaction at relatively low temperatures without any reaction between the (211) phase and the substrate, thus providing a film of the dense (211) phase.
The film is uniform and free of macroscopic defects because the (211) phase is comprised of fine grains and, therefore, is highly resistance to stress due to the thermal expansion difference between film and substrate. Subsequently, a film of the (035) phase is formed in a similar way. In the thermal decomposition method, a solution in which the molar ratio of Ba:Cu is 3:5 is prepared and coated on a substrate plus 211 film to cause thermal decomposition at 300 to 500 cm, thus producing a composite film. Adding silver to the (035) phase accelerates diffusion and sintering, thus improving bonding between grains. Therefore, preferred properties can be obtained by heat treatment at lower temperatures.The thermal decomposition method is usually conducted by adding silver naphthenate to a coating solution, and therefore is advantageous in that 1) silver is uniformly diffused in the coating solution, and 2) the amount of silver can easily be controlled. Effects can be obtained when an amount of 1 to 30 wt of silver is added.
Excessive amounts of silver will be precipitated on the surface of the coated film upon heat-treatment.
To obtain a uniform YBCO film, the ratio of weight or thickness of (211) phase and (035) or (037) layer should be controlled to have the same molar volume and react completely in accordance with the formula (211) + (035) = 2 (123). When the ratio is deviated from this value, that is in the case of excess (211) phase, then (211) may remain at the bottom of the produced YBCO film, while (035) or (037) phase may remain on the surface of the YBCO film in the case of an excess of (035) or (037). The 211 film remaining at the bottom of the YBCO film may act as a potential barrier layer to prevent reaction and diffusion between the YBCO film and the substrate.
In this way, a film is produced of a two-layered structure of the (211) - (035) phases (including silver).
Alternatively, there is produced a three-layered structure of the (211) - Ag - (035) phases. The three-layered structure is advantageous in grain orientation because in addition to the effect of Ag-addition, diffusion reaction uniformly occurs.
The two- or three-layer structure is subjected to heat treatment under an oxygen partial pressure of 1 x 10 to 1 x 10 1 atm at 650 to 930 CC for 0.1 to 50 hours to cause a diffusion reaction between the two phases to thereby yield a YBCO film in accordance with the following formulae:
Y2BaCuO5 + (3BaC03 + 5CuO) = 2YBa2Cu306 5 + 3CO2, or
Y2BaCuO5 + (3BaCuO2 + 2CuO) = 2YBa2Cu3065 A low partial oxygen pressure is effective for preparing a YBCO film of high quality upon low-temperature heat treatment because it accelerates solid phase reaction and diffusion. Diffusion is better accelerated when silver is added.The combination of a partial oxygen pressure of 1 x 10-5 5 to 5 x 10 2 atm with the addition of silver enables a high quality film to be formed at relatively low temperatures, very advantageous in view of avoiding a reaction between the film(s) and the substrate. The resultant YBCO film has a tetragonal structure and poor superconducting properties due to oxygen insufficiency.
Then, the film is subjected to annealing in an oxygen atmosphere at 350 to 900QC to fully oxidize the film to thereby produce a YBCO ortho rhombic structure film.
Fig. 1 shows measurements of a pattern of X-ray diffraction for the YBCO film. As can easily be seen, diffraction peaks are observed only for the (001) planes.
This indicates that grains are highly orientated with the c-axis normal to the plane of the film.
Fig. 2 shows the temperature dependence of magnetic susceptibility for YBCO films prepared on YSZ substrates under the same heat treatment conditions (at 7700C for 12 or 24 hours) except for oxygen partial pressure.
Fig. 3 shows the temperature dependence of magnetic susceptibility for YBCO films prepared on a YSZ substrate under the same oxygen partial pressure of 3 x 10 4 atm, but at different temperatures for different times. A film which exhibits a sharp magnetic susceptibility transition is believed to have a higher critical temperature and better superconducting properties. The figures indicate that the most preferred properties are imparted to a film which was subjected to heat treatment for diffusion at about 770"C in a 0.03% 02-containing atmosphere (an oxygen partial pressure of 3 x 10-4 atm).
Fig. 4 shows the effect of silver addition to the (035) phase with silver being added within the range of
O to 1.2 molar ratio. As is obvious from the figure, the most favorable magnetic susceptibilities can be obtained with films having about 0.6 to 0.9 molar weights (about 4 to 8 wt%) silver. Further, it is found that a change in magnetization (superconducting transition) is sharp at a
Tc (onset) of > 90K.
Fig. 5 shows measurements of critical current densities (Jc) of a YBCO film prepared on a silver substrate (2 pm x 6 mm x 10 mm) by the dc four point probe method. The figure indicates that the film has 2 a Jc (77K, OT, 1 pV/cm) of more than 20,000 A/cm2. The c value is the highest reported for YBCO films directly formed on a silver substrate.
Fig. 6 shows the temperature dependence of magnetic fundamental susceptibility of real (') and imaginary (") components of (relative) for the (211) - (035) phases and the (211) - Ag - (035) phases in the YBCO films prepared on YSZ substrates upon heat treatment in 0.03% oxygencontaining atmosphere at 770C for 12 hours in accordance with the process of the invention. The figure indicates that the YBCO film prepared upon heat treatment of the three-layer structure has an enhanced Tc and a sharp superconducting transition.
As discussed on the foregoing pages, the process of the invention is capable of forming a film of highly oritentated-grains having excellent superconducting properties even on polycrystalline or metallic substrates.
In some embodiments of the invention, the use of the thermal decomposition method is particularly advantageous in making superconductive films of large area and continuous length because no vacuum apparatus is required.
Examples: 1. A film in which the molar ratio of Y:Ba:Cu is 2:1:1
was formed on a YSZ substrate by thermal decomposition
coating using yttrium octylate, barium naphthenate,
copper and silver. The film was subjected to heat
treatment in air at 900 CC for one hour to yield the
green (211) phase film about 0.4 p thick. Next, a
(035) film about 0.8 p thick was formed thereon by
the thermal decomposition method and the film thus
treated was subjected to heat treatment in a 0.03%
oxygen-containing Ar atmosphere at 7700C for 12 hours,
and then subjected to annealing at 450 CC for 2 hours
and allowed to cool in furnace to thereby produce a
YBCO film of 8 mm x 25 mm. The YBCO film was measured
for magnetic susceptibility and critical current
density. The film showed a Tc (onset) of 90.5K and 2
a Jc of 2300 A/cm (77K, OT, 1 pV/cm).
2. A (211) phase film about 0.4 p thick was formed on
a silver substrate, and a film about 1.0 p thick in
which the composition Y:Ba:Cu:Ag is 0:3:7:0.9 was
formed thereon, and heat treated in the same ways
as in Example 1. The prepared YBCO film showed a
Tc (onset) of 90.OK and a Jc of 13,500 A/cm2 (77K,
OT, 0.1 pV/cm) and 16,000 A/cm2 (77K, OT, 1 pV/cm).
Although the invention has been shown and described with respect to a preferred embodiment thereof, it should be understood by those skilled in the art that various changes and omissions in the form and detail thereof may be made without departing from the scope of the invention.
Claims (4)
1. A process for preparing a superconductive YBa2Cu307 x (YBCO) film on a substrate by thermal decomposition of a coating using metal-organic compounds, comprising the steps of:
a. forming a Y2BaCuO5 (211) film on a substrate
b. forming on this (211) film a film of the (035) or (037) phase or a phase composition close to them comprising an oxide or a mixture of an oxide and a carbonate, if necessary, with the addition of silver to thereby produce a two-layer structure of the (211) - (035) phases,
c. determining the thickness of the 211 phase as a potential barrier layer by controlling the ratio of the precursor layers,
d. subjecting the resultant two-layer structure to heat treatment under an oxygen partial pressure of 1 x to to 1 x 10 1 atm at a temperature of 650 to 9300C to cause diffusion reaction and sintering to thereby produce a YBa2Cu 30x film, and
e. subjecting the YBa2Cu30x film to annealing in an oxygen atmosphere at a temperature of 350 to 9000C to cause oxidation of the film.
2. A process according to Claim 1, in which in step (b), prior to formation of the film of the (035) phase, a silver film is formed on the film of the (211) phase to produce a three-layer structure of the (211) - Ag - (035) phases.
3. A process according to Claim 1 or 2, in which the substrate comprises polycrystalline or metallic materials.
4. A process as herein before described with reference to the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9409534A GB2290307B (en) | 1994-05-12 | 1994-05-12 | Process for preparing a superconductive YBa2Cu307-X film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9409534A GB2290307B (en) | 1994-05-12 | 1994-05-12 | Process for preparing a superconductive YBa2Cu307-X film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9409534D0 GB9409534D0 (en) | 1994-06-29 |
| GB2290307A true GB2290307A (en) | 1995-12-20 |
| GB2290307B GB2290307B (en) | 1998-01-07 |
Family
ID=10755031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9409534A Expired - Fee Related GB2290307B (en) | 1994-05-12 | 1994-05-12 | Process for preparing a superconductive YBa2Cu307-X film |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2290307B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100443440C (en) * | 1996-07-12 | 2008-12-17 | 郑州大学 | Method for preparing yttrium barium copper oxygen superconductive material |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0310245A2 (en) * | 1987-09-30 | 1989-04-05 | General Motors Corporation | Formation of film superconductors by metallo-organic deposition |
| EP0340865A2 (en) * | 1988-05-06 | 1989-11-08 | Koninklijke Philips Electronics N.V. | Method for producing a superconductive Ca-Sr-Bi-Cu-O layer |
| EP0356352A2 (en) * | 1988-08-25 | 1990-02-28 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Yttrium rich conductive articles and processes for their preparation |
| US5019552A (en) * | 1990-02-20 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Long-laser-pulse method of producing thin films |
-
1994
- 1994-05-12 GB GB9409534A patent/GB2290307B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0310245A2 (en) * | 1987-09-30 | 1989-04-05 | General Motors Corporation | Formation of film superconductors by metallo-organic deposition |
| EP0340865A2 (en) * | 1988-05-06 | 1989-11-08 | Koninklijke Philips Electronics N.V. | Method for producing a superconductive Ca-Sr-Bi-Cu-O layer |
| EP0356352A2 (en) * | 1988-08-25 | 1990-02-28 | EASTMAN KODAK COMPANY (a New Jersey corporation) | Yttrium rich conductive articles and processes for their preparation |
| US5019552A (en) * | 1990-02-20 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Long-laser-pulse method of producing thin films |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100443440C (en) * | 1996-07-12 | 2008-12-17 | 郑州大学 | Method for preparing yttrium barium copper oxygen superconductive material |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2290307B (en) | 1998-01-07 |
| GB9409534D0 (en) | 1994-06-29 |
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