GB2284504A - Method of making an integrated high power limiter and amplifier - Google Patents

Abstract

One or more semiconductor layers 80 are epitaxially grown on a semi-insulating substrate 12. Schottky and ohmic contacts are formed by depositing metallic areas 80-92 at the same time as laying down conductive lines and thereafter selectively etching the insulating and metallic layers. The Schottky diodes are formed in anti-parallel configuration between a conductor line connecting input and output ends and a ground reference (Fig 5 not shown). The diodes form a limiter protection for a low-noise amplifier connected to the conductor output end and also integrated onto the substrate. The arrangement allows the integration of the limiter and amplifier using a GaAs monolithic structure. <IMAGE>

Description

INTEGRATED LIMITER AND AMPLIFYING r BACKGROUND AND SUMMARY The invention relates to microwave and millimeter wave monolithic integrated circuits (MMIC), and more particularly to protection of high performance low noise receiver amplifiers from excessive rf input power, spike leakage, and electromagnetic pulses.

It is known in the prior art to provide high power limiters formed of silicon PIN diodes to protect low noise receiver amplifiers operating in the microwave to millimeter wave frequency ranges. A drawback of PIN diodes is that they are not GaAs MIMIC compatible, and hence are not monolithically integratable with the receiver amplifier. This in turn requires the forming of discrete devices which are later connected in a circuit which then must be noise matched, adjusted, etc. for various resistance, capacitance, inductance and parasitic values.

The present invention overcomes the drawbacks of non-MMIC compatible limiters and provides the capability to protect low noise receiver amplifiers operating in the microwave to millimeter wave frequency ranges. The present invention adapts MOTT-barrier Schottky junctions with MMIC compatible processing to provide a limiter formed by an anti-parallel array of Schottky junctions monolithically integrated on the same substrate with the low noise receiver amplifier. The invention enables the formation of matrix junction arrays in accordance with system power protection requirements as well as monolithically integrating the limiter formed thereby with the low noise receiver amplifying elements, including MESFETs, HEMS, HBTs, etc. The NNIC compatibility also provides the tools to reduce volume, size, weight, and cost, as well as parasitic elemental values in order to efficiently operate at very high frequencies. Furthermore, it has been found that the present approach is more effective against spike leakage and radiation tolerance than PIN diode limiters.

In one aspect of the invention, a Schottky diode array is embedded in an on-chip low pass impedance matching structure that transforms 50 ohms to Zwtt the source impedance required for the minimum FET noise figure. By absorbing the diode's junction capacitance, Cjot into the low pass structure, the bandwidth is maximized and the noise is minimized. Thus, it is possible to achieve a noise matched rf protected low noise receiver amplifier that only requires an output matching network to make it a complete low noise module. No further input matching is required. Eliminating the need for a separate noise matching network results in at least several tenths of dB reduction in input losses and a corresponding reduction in the amplifier noise figure.

The Schottky diode based high power limiter technology of the present invention provides solutions to many of the problems of PIN diode limiters, and provides superior insertion loss at microwave and millimeter wave frequencies, excellent spike and flat leakage performance, and total compatibility with MMIC fabrication techniques. Limiters in accordance with the invention having a pulsed power handling capability in excess of 100 watts, and insertion losses as much as 1 dB less than that of PIN diode limiters of comparable power handling capability, have been achieved up through 30 GHz. Spike leakage is a major problem with slow responding PIN diodes. Limiters in accordance with the invention have measured in the 1.0 x 109 joules range, a factor of 10 lower than an accepted safe lower limit for sub 0.5 micron gallium arsenide FZTs and KEMTs.

In another aspect of the invention, high performance limiters have been fabricated using molecular beam epitaxy. This yields active layers having ultrasharp doping profiles for lowest series resistance and highest cutoff frequency. This enables production of rf protected millimeter wave transistors, including 0.25 micron gate length millimeter wave FETs having nearly 5 dB of gain at 35 Gaz. The quarter micron gates can be defined by electron beam lithography.

The processes for the Schottky diodes and for the receiver amplifier, including a gallium arsenide FET, are MMIC compatible, and further accommodate integration of passive resistors, inductors, and capacitors, as well as transmission lines. In addition to the limiting action that occurs when the diode is driven to its low resistance state, the diode's junction capacitance under forward bias increases by a factor of nearly three, shifting the cutoff frequency of the matching structure to a point below the operating band, resulting in additional isolation.

As noted above, PIN diode limiter technology is subject to limitations for low noise amplifier protection. These limitations include: high insertion loss, typically 2 dB up to 18 GHz and 4 dB up to 40 GRz for pulsed power levels of 10 watts, two microsecond pulse width; flat leakage levels that often exceed 100 milliwatts, which could damage HEMT low noise amplifiers; and spike leakage levels up to 100 x 109 joules which would damage most MESFETs and KEMTs. Furthermore, the material and processing are totally incompatible with MMIC fabrication techniques, precluding integration of the limiter function with the low noise amplifier. In one embodiment of the present invention, pulsed levels up to 45 dBm can be handled, and still achieve an insertion loss of approximately 0.7 dB and an isolation of over 20 dB with 45 dBm applied at 16 GHz. Two microsecond pulses up to 45 dBm are safely handled by a single anti-parallel pair of diodes (lxl array). A 2x2 array provides power handling capability of 54 dBm.

BRIEF DESCRIPTION OF THE DRAWINGS Prior Art FIG. 1 is a schematic diagram of a conventional receiver protection circuit.

FIG. 2 shows the diode equivalent circuit for each of the diodes of FIG. 1 for the small signal state.

FIG. 3 shows the diode equivalent circuit for each of the diodes of FIG. 1 for the large signal state.

FIG. 4 is a schematic circuit diagram of diodes embedded in low pass ladder filter structure.

Present Invention FIG. 5 is a schematic circuit diagram of ladder filter structure in accordance with the invention.

FIG. 6 shows a diode equivalent circuit for one of the diodes of FIG. 5 in the off state.

FIG. 7 is a plot of frequency versus insertion loss, showing insertion loss of the limiter of FIG.

10.

FIG. 8 is a plot of applied power versus power incident on FET 202 of FIG. 34.

FIG. 9 is a plot of depth versus carrier concentration, showing doping profiles of MBE grown active layers for a limiter diode, MESFET and HEMS.

FIG. 10 shows a high power limiter integrated circuit constructed in accordance with the invention.

FIG. 11 is an electric circuit diagram of the circuit of FIG. 10.

FIGS. 12-33 illustrate the sequential processing steps for fabricating the structure of FIG. 10.

FIG. 34 shows a microwave and millimeter wave monolithic integrated circuit constructed in accordance with the invention.

FIG. 5 is an electric circuit diagram of the circuit of FIG. 34.

FIGS. 36-50 illustrate the sequential processing steps for fabricating the structure of FIG. 34.

DETAILED DESCRIPTION Prior Art Conventional receiver protection circuits employ one or more diodes such as 302, 304, 306, 308, FIG. 1, connected across a transmission line 310, 312.

In the small signal state, the diodes are not conducting and thus appear as a very high resistance 314, FIG. 2, in parallel shunt with the diode zero-bias junction capacitance 316 shown at Cjo. In the large signal state, the diodes present a low resistance 318, FIG. 3, and therefore a large reflection coefficient to the incident power, reflecting most of it. The input impedance is shown at Zin the output impedance is shown at Z, and the characteristic line impedance is shown at Z. Because of the presence of the reactive element Cjo the protection circuit will exhibit increasing insertion loss with increasing frequency unless compensation is provided.

By embedding the diode in the filter structure shown in FIG. 4, an all pass transfer function can be approximated over a fairly wide frequency range. The filter structure, typically a low pass ladder, absorbs the junction capacitance, thereby extending the frequency range of operation to f the cutoff frequency of the resulting filter. The filter is typically designed to have equal input and output impedances, 9 and Zout, e.g, 50 ohms, to allow the protection circuit to be inserted in the signal path of a 50 ohm system with minimal effect.

Present Invention In the present invention, FIG. 5, the filter structure has unequal input and output impedances, Zin and Zt. The filter network parameters, including inductances 320, 322, and the Cjo capacitance 324, FIG. 6, Zt is transformed to a low, complex value, with Zin typically equal to 50 ohms. Zout is made equal to Zwt, the source impedance required for the minimum transistor noise figure Fjn for transistor 326, and the filter also functions as the noise matching network for transistor 326.

This eliminates the need for a separate matching network with its attendant loss which would add directly to the transistor noise figure Fitn The result is superior gain and noise performance relative to the performance obtained with a conventional approach that uses a 50 ohm limiter followed by a noise matched transistor.

In FIG. 5, the filter structure makes use of the FET gate-source junction as one element of an antiparallel pair of diodes 328, 330 to achieve symmetric clipping of voltage waveform at the gate 332 of the =T- when rectifying diodes are used as limiting elements.

This reduces circuit complexity and circuit losses because one less diode is required.

A property of diodes under forward bias wherein the junction capacitance increases by nearly a factor of three relative to the zero bias capacitance is used to increase the isolation of the limiter in nalLow- band applications, e.g. up to 20% bandwidth. By making the filter cutoff frequency slightly higher than the upper frequency of the operating band, additional isolation is obtained as the filter cutoff frequency is shifted down in frequency due to the increase in capacitance that occurs when a large signal is applied.

The present invention provides novel Schottky diode based, high power limiter technology affording solutions to many of the problems of PIN diode limiters.

Advantages of the present invention include superior insertion loss at microwave and millimeter wave frequencies, excellent spike and flat leakage performance, and compatibility with MMIC fabrication techniques. Limiters having a pulsed power handling capability in excess of 100 watts, and insertion losses as much as 1 db less than that of PIN diode limiters of comparable power handling capability, have been demonstrated up through 30 GHz.

Spike leakage is a major problem with slow responding PIN diodes. Limiters in accordance with the present invention measure in the 1.0 x v joules range, a factor of

10 lower than the usual saf lower limit for sub 0.5 U micron GaAs FETs and HEMTs.

The high performance Schottky diodes are preferably fabricated using epitaxial layers grown by molecular beam epitaxy. This yields active layers having ultrasharp doping profiles as shown in FIG. 9 and very high ( > 1019 cm'3) N layers for lowest resistance and highest cutoff frequency. The above growth process also makes possible the fabrication of 0.25 micron gate length millimeter wave FETs having nearly 5 dB of gain at 35 GHz. The process for both the Schottky diode and the FET are MMIC compatible, and hence permit integration of the two on a common substrate. Furthermore, the process accommodates the integration of passive resistances, inductances, and capacitances, as well as transmission lines. The Schcttky diode array is embedded in an onchip low pass impedance matching structure that transforms 50 ohms to Z t, the source impedance required for minimum GaAs FET noise figure. By absorbing the diodes junction capacitance, Cjo, into the low pass structure, the bandwidth is maximized and the loss is minimized.

There is thus achieved a noise matched rf protected transistor that only requires an output matching network to make it a complete low noise amplifier module. No further input matching is required. In addition to the limiting action that occurs when the diode is driven to its low resistance state, a factor of nearly three increase in the diodes junction capacitance under forward bias shifts the cutoff frequency of the matching structures to a point below the operating band, resulting in additional isolation. The present approach to integrating the protective limiter function with the transistor offers numerous performance advantages over conventional approaches, including noise figure and gain. Eliminating the need for a separate noise matching network results in several tenths of a db reduction in input losses and a corresponding reduction in amplifier noise figure.

The maximum available gain of the limiter of FIG. 10, to be described, is plotted in FIG. 7. Incident power to the FET of FIG. 34, to be described, versus applied power up to an input of 10 watts is plotted in FIG. 8. With 10 watts applied, the incident power is +19.5 dBm. This is considered safe for a 0.25 micron GaAs FET. If it is determined that a flat leakage level of +19.5 dBm is excessive, an additional limiter section can be included or further optimization of the diode design parameters can be easily performed to lower the level. Array 14, FIGS. 10 and 11, is a typical 1x1 array. Arrays 14 and 34 together form a 1x2 array.

Arrays 14, 34, 44, 56 together form a 2x2 array. Various other array configurations may be fabricated.

The limiter technology of the present invention includes numerous desirable characteristics. A MOTT-barrier junction is used to achieve lowest series resistance. Batch processing is used to define monolithic arrays of diodes. The diode junction can be integrated if desired with a diamond heat sink to achieve low thermal resistance, e.g. less than 80C per watt. Refractory and gold metallurgies are used for highest reliability. Plasma dry etch processes are used to accurately define small junction areas corresponding to Cjo < 0.05 pf. Active epilayers with high carrier concentration are used to achieve excellent radiation hardening. Molecular beam epitaxy is employed to grow epitaxial layers having extremely sharp N/N+ interfaces, yielding devices with nearly ideal MOTT-barrier characteristics. Typical doping profiles for diodes, FETs and REBUS are shown in FIG. 9. using the above noted technology and processing, devices have been developed with the following characteristics: thermal resistance < 800C per watt for Cjo - 0.1 pf, with diamond heat sink bonded to the junctions; on resistance < 1.5 ohms, with Cjo 0.1 pf; on resistance 5 2.5 ohms, with Cjo - 0.007 pf; ideality factor n S 1.08; series inductance Ls S 0.2 nE; shunt capacitance Cp < 0.02 pf; V characteristics satisfying the thermionic emission equation; AC/AV s 0, which is indicative of a MOTT-barrier, where AC is the change in capacitance, and AV is the change in voltage.

In a further desirable aspect of the invention, for lowest possible resistance, the ohmic contact is placed within 4 microns of the junction periphery and recessed within the N+ layer which has a carrier concentration of > 1x1019 cm~, FIG. 9. The latter also reduces skin effect contribution.

FET 202, FIG. 34, is a 0.25 micron gate length MESFET exhibiting the following dc and rf characteristics, including: a transconductance of 250 mS/mm; 2.3 dB noise figure at 18 GXz, a noise figure of 4.2 dB at 40 GRz; and a maximum available gain of 5 dB at 35 GXz. It is anticipated that with additional optimization the noise figure will be < 1.9 dB at 18 GHz, and 5 4.0 dB at 40 GHz. It is also anticipated that further development of HEMT technology using molecular beam epitaxy will surpass the above stated MESFET performance.

FIG. 10 shows a high power limiter 10 for a low noise amplifier. The limiter includes a substrate 12, a first anti-parallel array 14 of Schottky diodes 16, 18 monolithically integrated on substrate 12. Diodes 16 and 18 are arranged in parallel, FIG. 11, in an reverse polarity relative to each other between a first input node 20 and a first output node 22. A conductor 24 on substrate 12 has a first end 26 providing a limiter input for receiving a signal, and second end 28 providing a limiter output for connection to a low noise amplifier, such as a FET, HEMT, etc. Input node 20 is coupled to conductor 24 at connection node 30 intermediate ends 26 and 28. Node 22 is coupled to ground reference 32.

Another anti-parallel array 34 of Schottty diodes 36, 38 is monolithically integrated on substrate 12 and coupled in series with array 14 between conductor 24 and ground reference 32. Schottky diodes 36 and 38 are arranged in parallel and in reverse polarity relative to each other between an input node 40 and an output node 42. Input node 40 is coupled to output node 22. Output node 42 is coupled to ground reference 32.

Another anti-parallel array 44 of Schottky diodes 46, 48 is monolithically integrated on substrate 12 and coupled in parallel with array 14 between conductor 24 and the ground reference. Schottky diodes 46 and 48 are arranged in parallel and in reverse polarity relative to each other between input node 50 and output node 52. Input node 50 is coupled to conductor 24 at connection node 30 intermediate ends 26 and 28. Output node 52 is coupled to the ground ref hence at 54.

Another anti-parallel array 56 of Schottky diodes 58 and 60 is monolithically integrated on substate 12 and coupled in series with array 44 between conductor 24 and the ground reference at 54. Schottky diodes 58 and 60 are arranged in parallel and in reverse polarity relative to each other between input node 62 and output node 64. Input node 62 is coupled to output node 52. Output node 64 is coupled to the ground reference at 54.

Limiter 10 provides impedance transformation and matching for a low noise amplifier without a separate noise matching network. Conductor 24 includes inductors 66, 68 transforming the impedance at input end 26 to a different impedance at the output end 28 matching the low noise amplifier. Inductors 66 and 68 are connected in series with each other between ends 26 and 28. Nodes 20 and 50 are coupled to conductor 24 at connection node 30 intermediate inductors 66 and 68.

Another Schottky diode 70 and resonating capacitors 72, 74, 76 are monolithically integrated on substrate 12. Resonating capacitor 72 and arrays 14 and 34 are connected in series between the ground reference at 32 and conductor 24 at connection node 30 intermediate inductors 66 and 68. Resonating capacitor 72 tunes out the parasitic inductance of Schottky diodes 16, 18, 36, 38 to reduce the reactive portion of the diode impedance.

Resonating capacitor 74 and arrays 44 and 56 are connected in series between the ground reference at 54 and conductor 24 at connection node 30 intermediate inductors 36 and 38. Resonating capacitor 74 tunes out the parasitic inductance of Schottky diodes 46, 48, 58, 60 to reduce the reactive portion of the diode impedance.

Schottky diode 70 and resonating capacitor 76 are connected in series between the ground reference at 32 and conductor 24 at connection node 78 intermediate inductor 68 and conductor end 28. Resonating capacitor 76 tunes out the parasitic inductance of Schottky diode 70 to reduce the reactive portion of the diode impedance. The constructions shown in FIGS. 10 and 11 provide an odd number of Schottky diodes monolithically integrated on substrate 12, with Schottky diode 70 being the odd Schot- tky diode.

The process for fabricating the structure of FIG. 10 is shown beginning in FIG. 12. N3 layer 80, N layer 82, and N layer 84 are epitaxially grown on GaAs semi-insulating substrate 12. Photoresist masking material is then applied, masked, and exposed, followed b; etching of the unexposed photoresist, N layer 84, N+ layer 82, and part of N8 layer 80, followed by removal of the remaining photoresist, to yield mesa 86, FIG. 13.

This is followed by deposition of Ta layer 88, Au layer 90, and Ta layer 92, FIG. 14, for forming Schottky contacts with N layer 84 therebelow, to be described.

Photoresist is then applied and exposed through areas 94 and 96 of mask 98, FIG. 15, to define the Schottky array location, e.g. areas 94 and 96 define the locations for Schottky diodes 16 and 18 of array 14.

The processing shown in FIGS. 11-14 of U.S.

Patent 4,876,176, incorporated herein by preference, is then followed. The unexposed photoresist and Ta layer 92 therebelow are etched with CF4/02, and then the remainder of the photoresist is removed, as shown in FIG. 12 of the '176 patent, followed by etching of Au layer 90 with Ar/O2, as shown in FIG. 13 of the '176 patent, followed by CF,/Ot etching of top Ta layer 92 and bottom Ta layer 88 which is not covered by Au layer 90, as shown in FIG.

14 of the '176 patent, yielding the structure shown in FIG. 16, including Ta layers 100 and 102, and Au layers 104 and 106. A top view of the structure of FIG. 16 is shown in FIG. 17. Metallization 104 and 100 form a Schottky contact with N layer 84 at Schottky barrier junction 84a. Netallization 106 and 102 form a Schottky contact with N layer 84 at Schottky barrier junction 84b.

SiOz layer 108, FIG; 18, is then deposited, followed by deposition of Si3N4 layer 110. Photoresist is then applied, and exposed through areas 112 and 114 of mask 116, FIG. 19. The exposed photoresist and the Si3N4 layer 110 and SiO2 layer 108 therebelow are etched using CF or CF4/02, to yield the structure shown in FIG. 20, and in top view in FIG. 21. The etched holes are shown at 118 and 120, where the Si3N4 and SiO2 have been etched away. With photoresist 122 still in place, N layer 84 is etched, and N+ layer 82 is partially etched, followed by electron beam deposition of GeAu layer 124 and Au layer 126, yielding the structure shown in FIG. 22, including GeAu layer 128 and Au layer 130 in hole 118, and GeAu layer 132 and Au layer 134 in hole 120. Au layer 126, GeAu layer 124, and photoresist 122 over Si3N; layer 110 are then removed by lift-off techniques, and the remaining GeAu layers 128, 132 and Au layers 130, 134 are annealed and sinter alloyed, to yield the structure in FIG. 23, including ohmic contacts 136 and 138.

In an alternate embodiment, following the step in FIG. 16, N layer 84 is etched to yield the struc ture shown in FIG. 24, including N regions 140 and 142.

The remaining noted steps through FIG. 23 are then performed, yielding the structure in FIG. 25, which is preferred for improved breakdown voltage. Continued processing of the structure of FIG. 25 will now be described, though the processing also applies to the structure of FIG. 23.

Photoresist is applied over the surface of the structure of FIG. 25, and is exposed through mask 98, FIG. 15, followed by etching with CF or CF4/O2, followed by removal of the photoresist, to yield the structure shown in FIG. 26, and in top view in FIG. 27. The processing illustrated in FIGS. 1-5 of incorporated U.S.

Patent 4,876,176 is then performed, as described at column 4, line 56 through column 5, line 25 of the '176 patent, and if resistors are desired, the process illustrated in FIG. 6 of the '176 patent is performed, as described at column 5, lines 25-32 of the '176 patent.

This yields the structure of FIG. 28, where the reference characters Ta1, Au,, Ta2, Ta205, Ta3, and Au2, are used from the '176 patent where appropriate to facilitate understanding. Structure 144 is a capacitor, and structure 146 is an inductor, as shown in FIG. 5 of the '176 patent. The capacitor is provided by the oxide layer Ta205 between the metal layers. FIG. 29 is a perspective view of the left portion of FIG. 28 and shows diode pair array 14, FIGS. 10 and 11, including diodes 16 and 18, Au metallization 20 providing the cathode for diode 16 and the anode for diode 18, and Au metallization 22 providing the anode for diode 16 and the cathode for diode 18.

Metallization 20 includes finger portion 148 providing the anode for diode 18. Metallization 22 includes finger portion 150 providing the anode for diode 16.

Photoresist is then applied, and exposed through mask 116, FIG. 19, followed by etching of SiO2 layer 108 and Si3N4 layer 110 using a combination of chemical etching and plasma etching, preferably to etch the Si3N4 and SiOz using CF or Cm/02 followed by chemical etching of the SiO2 using buffered HF, followed by etching of the N layer 84 if the structure of FIG. 23 was followed, and then by etching of the N+ layer 82 and N1 layer 80, to yield the structure shown in FIG. 30, and in perspective view in FIG. 31, including air gap 152 below diode leads 154 and 156 adjacent respective finger portions 148 and 150.

The wafer is then immersed in a solution of H202, as described in U.S. Patent 4,098,921, incorporated herein by reference, and in "An Improved High Temperature GaAs Schottky Junction, J. Calviello and J. Wallace, Conference on Active Semiconductor Devices for Microwave and Integrated Optics, Cornell University, Ithaca, New York, August 19-21, 1975, to form a native oxide passivation layer 158 in air gap 152, FIG. 32. The process of FIGS. 7 and 8 of incorporated U.S. Patent 4,876,176 is then followed, as described at column 5, lines 33+ of the '176 patent, to yield the structure shown in FIG. 33, including via holes such as 160 for grounding or other connection, and bridging connectors such as 162 for connecting circuits such as inductor 146 to capacitor 144.

FIGS. 34 and 35 show an MMIC, microwave and millimeter wave monolithic integrated circuit 200, and use like reference numerals from FIGS. 10 and 11 where appropriate to facilitate understanding. An amplifier 202 is monolithically integrated on the same substrate 12 with high power limiter 10. In the embodiment shown, amplifier 202 is a FET, field effect transistor, including a drain 204, gate 206, source 208, and gate-source junction 210, which is also schematically shown in dashed line at 210a. Schottky diode 70 and junction 210 are in parallel and in reverse polarity relative to each other, as shown at 210a, to form an anti-parallel array 212 of diodes 70 and 210 at 210a. The construction of FIGS. ically integrated on substrate 12, with Schottky diode 70 being the odd Schottky diode. The anti-parallel diode arrays 14, 34, 44, 56, 212 provide symmetrical clipping of the signal, with one less diode than otherwise required.

The processing for the structure of FIG. 34 is shown beginning in FIG. 36. Starting with GaAs semiinsulating substrate 220, and using molecular beam epi- taxy, there is epitaxially grown Nt buffer layer 222, active N layer 224, N+ layer 226, AlGaAs layer 228, Nt layer 230, and N layer 232. Active layer 224 is for the amplifier, e.g. FET such as a MESrLl, MOSFET, HEMT, EBT (heterojunction bipolar transistor), etc. N+ layer 226 above active layer 224 is for low resistivity ohmic contact. The structure is then processed as above described in connection with FIGS. 13-16, and including the etching step of FIG. 24, to yield the structure shown in FIG. 37, including N regions 234, 236, Ta regions 238, 240, Au regions 242, 244, corresponding respectively to regions 140, 142, 100, 102, 104, 106, FIG. 24. The AlGaAs layer 228 is a stop etch layer for the noted processing of FIGS. 13-24. The stop etch layer 228 is then removed.

In the next step, the diode array mesa 246 and the FET mesa 248 are defined. Photoresist is applied, masked, and exposed, and then the N+ layer 226 and active layer 224 and part of the buffer layer 222 are etched, followed by removal of the-photoresist, to yield the structure in FIG. 38. siOz and Si3N4 are then deposited, as in FIG. 18, followed by application of photoresist, which is masked and exposed for the diode contacts, FIG. 19, and for the FET contact for source and drain, and then etched to yield the structure in FIG. 39, including SiOz layer 250, Si3N4 layer 252, and photoresist 254, corresponding respectively to layers 108, 110, 122, FIG. 20 Holes 256 and 258 correspond respectively to holes 118 and 120 in FIG. 20. Holes 260 and 262 provide source and drain contact holes, to be described. A monolayer of the N+ layer in holes 256, 258, 260, 262 is then etched to clean the surface for ohmic contact definition, followed by the processes described above in connection with FIGS. 22 and 23, including electron beam deposition of GeAu and Au layers comparably to layers 124 and 126, and including the noted lift-off and annealing, to yield the structure shown in FIG. 40, including ohmic contacts 264 and 266 for the FET, and ohmic contacts 268 and 270 which are comparable to contacts 136 and 138 in FIG. 23. Photoresist is then applied, masked exposed, and etched to open holes to the Sc;hottky Au regions 242 and 244, as in PIGS. 26 and 27, resulting in the struc ture e in FIG. 41, and in top view in FIG. 42.

In the next step, PMMA (poly methyl methacrylate) is applied and EBL (electron beam lithography) is used for gate lengths less than 0.5 microns, or alternatively photoresist is applied for gate lengths greater than 0.5 microns. The P!MA is exposed by EBL, or the photoresist is masked and exposed, followed by removal of the exposed PNNA or photoresist, to yield the structure in FIG; 43, including P.or on photoresist layer 272, and hole 274. The Si3N4 layer 252, SiOt layer 250, N+ layer 226, and part of N active layer 224 in hole 274 are then etched, FIG. 44, to define the FET gate. Ti layer 276, Pt layer 278, and Au layer 280 are then deposited, yielding the structure in FIG. 45, including Ti region 282, Pt region 284, and Au region 286 in hole 274. The metals are then lifted off, and then the photoresist or PNMA layer 272 is dissolved, yielding the structure in FIG.

46. The structure provides a passivated conducting channel including the recessed channel. The metallization is deposited by evaporation in a vacuum, and the metal layers 282, 284, 286 have a total height greater than the height of the recessed channel in N+ layer 226 and the portion of active layer 224. As shown in FIG.

47, the total height 288 of metallization layers 282, 284, 286 is greater than the height 290 of the recessed channel. Height 288 is also greater than height 290 plus the thickness of SiO2 layer 250 and Si3N, layer 252, such that gold layer 286 is above the top of layer 252. A top view of the structure of FIG. 46 is shown in FIG. 48.

The processing is then continued as described above beginning with FIG. 28 to deposit the seven metal and dielectric layers to define the microwave and millimeter wave capacitors, inductors, etc., including the above noted via holes and bridging connectors, to provide the circuit of FIG. 34.

The gate contact structure is shown in FIG.

49, including portion 292 of the above noted Tar layer, and portion 294 of the above noted Au1 layer. In another embodiment, a T-type gate is provided by etching portions of the Si3N4 layer 252 and SiO2 layer 250 adjacent contact metallizations 286 and 284, to yield the structure in FIG. 50, to decrease parasitic capacitance between the gate and source and between the gate and drain.

It is recognized that various equivalents, alternatives and modifications are possible within the scope of the appended claims.

Claims (45)

CLAIMS:

1. A method for making a high power limiter for a low noise amplifier comprising providing a semiinsulating substrate, epitaxially growing one or more semiconductor layers on said substrate, etching said one or more semiconductor layers to form a mesa, depositing a first set of one or more metal layers on said substrate, including said mesa, for forming Schottky contacts with one of said semiconductor layers therebelow, locating areas on said mesa for Schottky diodes, etching said first set of one or more metal layers and leaving metallization providing Schottky contacts at said areas, depositing one or more insulating layers on said substrate, including said mesa and said Schottky contacts, etching a first set of holes in said one or more insulating layers to expose said one or more semiconductor layers on said mesa, depositing a second set of one or more metal layers in said first set of holes, to form ohmic contacts with said one or more semiconductor layers, etching a second set of holes in said one or more insulating layers to expose said Schottky contacts, depositing a series of layers of metals and oxides on said substrate, including said mesa and including in said first and second sets of holes, etching said series of layers to form a capacitor provided by an oxide layer between metal layers of said series and to form an inductor by a metal layer of said series and to form conductors electrically contacting said ohmic contacts and said Schottky contacts, such that said Schottky diodes form an anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, one of said conductors of said series having a first end providing a limiter input for receiving a signal and a second end providing a limiter output for connection to said low noise amplifier, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference.

2. The method according to claim 1 comprising, after said step of depositing said one or more insulating layers, applying masking material and etching said first set of holes in said one or more insulating layers to expose said one or more semiconductor layers on said mesa, leaving said masking material in place and etching portions of said one or more semiconductor layers in said first set of holes and depositing said second set of one or more metal layers on said masking material and in said holes on said one or more semicondcutor layers, removing said second set of one or more metal layers on said masking material outside of said first set of holes, and removing said masking material.

3. The method according to claim 2 comprising etching said one or more insulating layers beneath portions of said conductors of said series adjacent said Schottky contacts to form an air gap, and forming a native oxide passivation layer in said air gap.

4. The method according to claim 1 comprising providing said one or more semiconductor layers by an N+ layer and by an N layer on said N+ layer, and comprising, during said step of etching said first set of one or more metal layers, also etching said N layer outside of said areas providing said Schottky diodes to leave regions of said N layer beneath said metallization providing said Schottky contacts, for improved breakdown voltage.

5. The method according to claim 1 comprising providing said second set of one or more metal layers by a GeAu layer and a Au layer, electron beam depositing said GeAu layer and said Au layer in said first set of holes, and annealing and sinter alloying said GeAu and Au layers in said first set of holes to provide ohmic contacts.

6. The method according to claim 5 comprising, after said step of depositing one or more insulating layers, applying masking material on said one or more insulating layers, etching said first set of holes, leaving said masking material in place and electron beam depositing said GeAu and Au layers on said masking material and in said first set of holes, lifting off said Au layer, said GeAu layer and said masking material over said one or more insulating layers prior to said annealing.

7. The method according to claim 1 comprising providing said inductor formed by said metal layer of said series along one of said conductors of said series between said first and second ends and transforming the impedance at said first end to a different impedance at said second end matching said low noise amplifier.

8. The method according to claim 7 comprising providing said capacitor formed by said oxide layer between said metal layers in series with said antiparallel array between said ground reference and said conductor intermediate said first and second ends such that said capacitor tunes out the parasitic inductance of said first and second Schottky diodes to reduce the reactive portion of the diode impedance.

9. A method for making a high power limiter for a low noise amplifier comprising providing a GaAs semiinsulating substrate, epitaxially growing an NB layer, an N+ layer, and an N layer on said substrate, etching said N layer, said N+ layer, and a portion of said NB layer to provide a mesa, depositing a first Ta layer, a first Au layer, and a second Ta layer on said substrate, including said mesa, for forming Schottky contacts with said N layer therebelow, locating areas on said mesa for Schottky diodes, etching said second Ta layer, said first Au layer, and said first Ta layer and leaving a portion of said first Ta layer and a portion of said first Au layer providing a first Schottky contact, and leaving another portion of said first Ta layer and another portion of said first Au layer providing a second Schottky contact, depositing a sio2 layer and a Si3N4 layer on said substrate, including said mesa and said Schottky contacts, applying masking material on said Si3N4 layer, etching a first set of holes in said masking material, said Si3N4 layer, and said sio2 layer, leaving said masking material in palce and electron beam depositing a GeAu layer and a second Au layer on said masking material and also in said first set of holes to yield a GeAu layer and an Au layer in a first hole of said first set, and a GeAu layer and an Au layer in a second hole of said first set, lifting off said masking material, said second Au layer, and said GeAu layer over said Si3N4 layer, annealing and sinter alloying said Au layer and GeAu layer in said first hole, and said Au layer and said GeAu layer in said second hole to yield a first ohmic contact in said first hole, and a second ohmic contact in said second hole, etching a second set of holes in said Si3N4 layer and said sio2 layer to expose said Schottky contacts formed by said regions remaining from said first Ta layer and said first Au layer, depositing a series of layers comprising a third Ta layer, a third Au layer, a fourth Ta layer, a Ta205 layer, a fifth Ta layer, and a fourth Au layer, on said substrate, including said mesa and including in said first set of holes, and said second set of holes over said Schottky contacts, etching said series of layers to form a capacitor provided by said Ta2O5 layer between said fourth Ta layer and said fifth Ta layer, and to form an inductor provided by said third Ta layer and said third Au layer, and to form conductors provided by said third Ta layer and said third Au layer contacting said ohmic contacts and said Schottky contacts, such that said Schottky diodes form an anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, a conductor provided by said third Au layer and said third Ta layer on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output for connection to said low noise amplifier, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference.

10 . The method according to claim 9 comprising, during said step of etching said second Ta layer, said first Au layer, and said first Ta layer, also etching said N layer outside of said Schottky contact areas to leave a region of said N layer below said first Schottky contact, and to leave another region of said N layer below said second Schottky contact.

11. An MMIC, microwave and millimeter wave monolithic integrated circuit, comprising a substrate, an amplifier monolithically integrated on said substrate, a high power limiter integrated on the same said substrate with said amplifier.

12. The invention according to claim 11 wherein said limiter comprises a plurality of Schottky diodes.

13. The invention according to claim 12 wherein said amplifier comprises a FET, field effect transistor, monolithically integrated on said substrate and having a junction, and comprising a first anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, a conductor on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output coupled to said FET, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference, and comprising a third Schottky diode monolithically integrated on said substrate, wherein said third Schottky diode and said junction are in parallel and in reverse polarity relative to each other to form a second anti-parallel array of diodes.

14. The invention according to claim 13 comprising an odd number of Schottky diodes monolithically integrated on said substrate, said third Schottky diode being the odd Schottky diode, said first and second anti-parallel arrays of diodes providing symmetrical clipping of said signal with one less diode.

15. The invention according to claim 13 wherein said FET comprises a gate, source and drain, and wherein said third Schottky diode is arranged in parallel and in reverse polarity with the gate to source junction of said FET.

16. The invention according to claim 15 comprising first and second resonating capacitors monolithically integrated on said substrate, said first resonating capacitor being cennected in series with said first anti-parallel array between said conductor and said ground reference and tuning out the parasitic inductance of said first and second Schottky diodes to reduce the reactive portion of the diode impedance, said second resonating capacitor being connected in series with said third Schottky diode between said conductor and said ground reference and tuning out the parasitic inductance of said third Schottky diode to reduce the reactive portion of the diode impedance.

17. The invention according to claim 15 wherein said first anti-parallel array is coupled to said conductor at a first connection node, and said third Schottky diode is coupled to said conductor at a second connection node, and said conductor includes first and second inductors connected in series with each other between said first and second ends of said conductor, said first inductor being between said first end of said conductor and said first connection node, said second inductor being between said first connection node and said second connection node, said second connection node being between said second inductor and said gate of said FET.

18. A method for making an MMIC, microwave and millimeter wave monolithic integrated circuit comprising providing a semi-insulating substrate, monolithically integrating an amplifier on said substrate, monolithically integrating a high power limiter on the same said substrate with said amplifier.

19. The method according to claim 18 comprising monolithically integrating a plurality of Schottky diodes on said substrate forming said limiter.

20. The method according to claim 19 comprising epitaxially growing a first set of one or more semiconductor layers, a stop etch layer, and a second set of one or more semiconductor layers on said substrate, etching said second set of one or more semiconductor layers to define a first section providing a Schottky diode array section, depositing a first set of one or more metal layers on said substrate, including said first section, forming Schottky contacts with one of said semiconductor layers of said second set therebelow, locating areas in said first section for Schottky diodes, etching said first set of one or metal layers and leaving metallization providing Schottky contacts at said areas, removing said stop etch layer outside said first section, etching said second set of one or more semiconductor layers to define a second section on said substrate having a mesa formed by said second set of one or more semiconductor layers and to define a mesa at said first section formed by said first set of one or more semiconductor layers and by said stop etch layer and by said second set of one or more semiconductor layers, depositing one or more insulating layers on said substrate, including said mesas at said first and second sections and said Schottky contacts, etching a first set of holes in said one or more insulating layers to expose said one or more semiconductor layers of said second set on said mesa of said first section, and etching a second set of holes in said one or more insulating layers to expose said one or more semiconductor layers of said first set of said mesa of said second section, depositing a second set of one or more metal layers in said first set of holes to form a first set of ohmic contacts with said second set of one or more semiconductor layers, and in said second set of holes to form a second set of ohmic contacts with said first set of one or more semiconductor layers, etching a third set of holes in said one or more insulating layers to expose said Schottky contacts, etching a gate hole in said one or more insulating layers to expose a portion of said first set of one or more semiconductor layers adjacent said second set of ohmic contacts, depositing gate metallization in said gate hole, depositing conductor metallization electrically contacting said first set of ohmic contacts, said second set of ohmic contacts, said Schottky contacts, and said gate metallization, such that said Schottky diodes form an anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, said conductor metallization on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output coupled to said gate metallization, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference.

21. The method according to claim 20 comprising, after said step of etching said third set of holes in said one or more insulating layers, applying masking material selected from the group consisting of PMMA and photoresist to said substrate, including said mesas of said first and second sections, etching said masking material and said one or more insulating layers and a portion of said first set of one or more semiconductor layers at said gate hole, leaving said masking material in place and depositing a third set of one or more metal layers on said substrate, including on said masking material on said mesas of said first and second sections and in said gate hole, lifting off said third set of one or more metal layers and said masking layer and leaving the portion of said third set of one or more metal layers in said gate hole as said gate metallization.

22. The method according to claim 21 comprising depositing said third set of one or more metal layers in said gate hole to a height greater than the height of the etched depth into said first set of one or more semiconductor layers.

23. The method according to claim 22 comprising depositing said third set of one or more metal layers in said gate hole to a height greater than the height of the etched depth into said first set of one or more semiconductor layers plus the height of said one or more insulating layers, such that the top layer of said third set of one or more metal layers is above the top layer of said one or more insulating layers.

24. The method according to claim 23 comprising additionally etching portions of said one or more insulating layers and said first set of one or more semiconductor layers adjacent said third set of one or more metal layers in said gate hole.

25. The method according to claim 24 comprising depositing said conductor metallization on the top layer of said third set of one or more metal layers and spacing said conductor metallization above said first set of one or more semiconductor layers at said last mentioned etched portion of said one or more insulating layers.

26. The method according to claim 20 comprising, after said step of depositing said gate metallization, depositing a series of layers of metals and oxides on said substrate. including said mesas of said first and second sections, said first set of holes, said second set of holes, said third set of holes, and said gate hole, etching said series of layers to form a capacitor provided by an oxide layer between metal layers of said series and to form an inductor provided by a metal layer of said series, and to form conductors electrically contacting said first set of ohmic contacts, said second set of ohmic contacts, said Schottky contacts, and said gate metallization.

27. The method according to claim 20 comprising, after said step of depositing said one or more insulating layers, applying masking material and etching said first set of holes in said one or more insulating layers to expose said one or more semiconductor layers of said second set on said mesa of said first section, and etching said second set of holes in said one or more insulating layers to expose said one or more semiconductor layers of said first set on said mesa of said second section, leaving said masking material in place and etching portions of said one or more semiconductor layers in said first set of holes and in said second set of holes and depositing said second set of one or more metal layers on said masking material and in said first and second sets of holes on said one or more semiconductor layers, removing said second set of one or more metal layers on said masking material outside of said first and second sets of holes, and removing said masking material.

28. The method according to claim 27 comprising etching said one or more insulating layers beneath portions of said conductor metallization adjacent said Schottky contacts to form an air gap, and forming a native oxide passivation layer in said air gap.

29. The method according to claim 20 comprising providing said one or more semiconductor layers of said second set by an N+ layer and by an N layer on said N+ layer, and comprising during said step of etching said first set of one or more metal layers, also etching said N layer outside of said areas providing said Schottky diodes to leave regions of said N layer beneath said metallization providing said Schottky contacts, for improved breakdown voltage.

30. The method according to claim 20 comprising providing said second set of one or more metal layers by a GeAu layer and a Au layer, electron beam depositing said GeAu layer and said Au layer in said first and second sets of holes, and annealing and sinter alloying said GeAu and Au layers in said first and second sets of holes to provide ohmic contacts.

31. The method according to claim 30 comprising, after said step of depositing said one or more insulating layers, applying masking material on said one or more insulating layers, etching said first set of holes and said second set of holes, leaving said masking material in place and electron beam depositing said GeAu and Au layers on said masking material and in said first set of holes and in said second set of holes, lifting off said Au layer, said GeAu layer anc said masking material over said one or more insulatinc layers prior to said annealing.

32. The method according to claim 26 comprisinc providing said inductor formed by said metal layer oJ said series along one of said conductors of saic series between said first and second ends anc transforming the impedance at said first end to different impedance at said second end matching saic low noise amplifier.

33. The method according to claim 32 comprisinc providing said capacitor formed by said oxide layer between said metal layers in series with said antiparallel array between said ground reference and saic conductor intermediate said first and second ends sucI that said capacitor tunes out the parasitic inductance of said first and second Schottky diodes to reduce the reactive portion of the diode impedance.

34. A method for making an MMIC, microwave anc millimeter wave monolithic integrated circuit comprising providing a GaAs semi-insulating substrate epitaxially growing an NB layer, a first N layer, first N+ layer, a AlGaAs layer, a second N+ layer, anc a second N layer on said substrate, etching said second N layer and said second N+ layer, with said AlGaAs layer acting as a stop etch layer, depositing a first Ta layer, a first Au layer, and a second Ta layer on said second N layer for forming Schottky contacts, locating areas for Schottky diodes at a first section of said substrate, etching said second Ta layer, said first Au layer, and said first Ta layer and leaving a portion of said first Ta layer and a portion of said first Au layer providing a first Schottky contact, and leaving another portion of said first Ta layer and another portion of said first Au layer providing a second Schottky contact, removing said AlGaAs layer outside said first section, etching said first N+ layer and said first N layer to define a first mesa at said first section of said substrate and to define a second mesa at a second section of said substrate, depositing a sio2 layer and a Si3N4 layer on said substrate, including said first and second mesas and said Schottky contacts, applying photoresist on said Si3N4 layer, etching a first set of holes in said photoresist, said Si3N4 layer and said SiO2 layer on said first mesa, etching a second set of holes in said photoresist, said Si3N4 layer, and said sio2 layer on said second mesa, leaving said photoresist in place and electron beam depositing a GeAu layer and a second Au layer on said photoresist and also in said first and second sets of holes to yield a GeAu layer and an Au layer in the holes, lifting off said photoresist, said second Au layer, and said GeAu layer over said Si3N4 layer, annealing and sinter alloying said Au layer and GeAu layer in said holes to yield first and second sets of ohmic contacts, etching a third set of holes in said Si3N4 layer and said SiO2 layer to expose said Schottky contacts formed by said regions remaining from said first Ta layer and said first Au layer, applying masking material selected from the group consisting of PMMA and photoresist to said substrate, including said first and second mesas etching said masking material and said Si3N4 layer and said SiO2 layer and a portion of said first N+ layer on said second mesa to provide a gate hole, depositing a Ti layer, a Pt layer, and a third Au layer on said substrate, including said masking material on said first and second mesas and in said gate hole, lifting off said third Au layer, said Pt layer, said Ti layer, and said masking material and leaving the portion of said Ti layer, said Pt layer, and said third Au layer in said gate hole as gate metallization, depositing a series of layers comprising a third Ta layer, a fourth Au layer, a fourth Ta layer, a Ta205 oxide layer, a fifth Ta layer, and a fifth Au layer, on said substrate, including said first and second mesas and including in said first set of holes, said second set of holes, said third set of holes, and on said gate metallization, etching said series of layers to form a capacitor provided by said Ta205 oxide layer between said fourth Ta layer and said fifth Ta layer, and to form an inductor provided by said third Ta layer and said fourth Au layer, and to form conductors provided by said third Ta layer and said fourth Au layer contacting said ohmic contacts and said Schottky contacts and said gate metallization, such that said Schottky diodes form an anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, a conductor provided by said fourth Au layer and said third Ta layer on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output coupled to said gate metallization, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference.

35. The method according to claim 34 comprising during said step of etching said second Ta layer, said first Au layer, and said first Ta layer, also etching said second N layer outside of said Schottky contact areas to leave a region of said second N layer below said first Schottky contact, and to leave another region of said second N layer below said second Schottky contact.

36. The method according to claim 34 comprising depositing said Ti layer, said Pt layer, and said third Au layer in said gate hole to a height greater than the height of the etched depth into said first N+ layer and said first N layer.

37. The method according to claim 36 comprising depositing said Ti layer, said Pt layer, and said third Au layer in said gate hole to a height greater than the height of said etched depth into said first N+ layer and said first N layer plus the height of said SiO2 layer and said Si3N4 layer, such that said third Au layer is above said Si3N4 layer, and provides a hermetically sealed transistor channel.

38. The method according to claim 37 comprising additionally etching portions of said Si3N4 layer, said SiO2 layer and said first N+ layer adjacent said Ti layer, said Pt layer, and said third Au layer in said gate hole.

39. The method according to claim 38 comprising depositing said third Ta layer and said fourth Au layer on said third Au layer and spacing said conductor metallization provided by said third Ta layer and said fourth Au layer above said first N+ layer at said last mentioned etched portion of said Si3N4 layer and said sio2 layer.

40. A method substantially as herein described with reference to the accompanying drawings.

41. A high power limiter for a low noise amplifier, comprising a substrate, a first anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, a conductor on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output for connection to said low noise amplifier, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference.

42. A high power limiter providing impedance transformation and matching for a low noise amplifier without a separate noise matching network, comprising a substrate, a first anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and first output node, a conductor on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output for connection to said low noise amplifier, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference, said conductor including inductor means transforming the impedance at said first end to a different impedance at said second end matching said low noise amplifier.

43. A high power limiter for a low noise amplifier, comprising a substrate, a first anti-parallel array of Schottky diodes monolithically integrated on said substrate and comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, a conductor on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output for connection to said low noise amplifier, said conductor comprising first and second inductors connected in series with each other between said first and second ends of said conductor, said first input node being coupled to said conductor intermediate said first and second inductors, said first output node being coupled to a ground reference.

44. A high power limiter for a low noise amplifier, comprising a substrate, a conductor on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output for connection tp said low noise amplifier and including first and second inductors connected in series with each other between said first and second ends of said conductor and including a first connection node between said first and second inductors and a second connection node between said second inductor and said second end of said conductor, first, second and third capacitors monolithically integrated on said substrate, first, second, third and fourth anti-parallel arrays of Schottky diodes monolithically integrated on said substrate, said first anti-parallel array comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, said second antiparallel array comprising third and fourth Schottky diodes arranged in parallel and in reverse polarity relative to each other between a second input node and a second output node, said third anti-parallel array comprising fifth and sixth Schottky diodes arranged in parallel and in reverse polarity relative to each other between a third input node and a third output node, said fourth anti-parallel array comprising seventh and eighth Schottky diodes arranged in parallel and in reverse polarity relative to each other between a fourth input node and a fourth output node, a ninth Schottky diode monolithically integrated on said substrate and coupled in series with said third capacitor between said second connection node and a ground reference, said first capacitor being connected between said first connection node and said first input node, said first output node being connected to said second input node, said second output node being connected to said ground reference, said second capacitor being connected between said first connection node and said third input node, said third output node being connected to said fourth input node, said fourth output node being connected to said ground reference.

45. A high power limiter for a low noise amplifier comprising a substrate, an odd number of Schottky diodes monolithically integrated on said substrate comprising a first anti-parallel array of Schottky diodes comprising first and second Schottky diodes arranged in parallel and in reverse polarity relative to each other between a first input node and a first output node, a conductor on said substrate having a first end providing a limiter input for receiving a signal and a second end providing a limiter output for connection to said low noise amplifier, said first input node being coupled to said conductor intermediate said first and second ends of said conductor, said first output node being coupled to a ground reference, a third said Schottky diode coupled between said ground reference and said conductor, said third Schottky diode being the odd Schottky diode.