GB2274468B - Phosphorous effusion apparatus and method for molecular beam epitaxy - Google Patents
Phosphorous effusion apparatus and method for molecular beam epitaxyInfo
- Publication number
- GB2274468B GB2274468B GB9400672A GB9400672A GB2274468B GB 2274468 B GB2274468 B GB 2274468B GB 9400672 A GB9400672 A GB 9400672A GB 9400672 A GB9400672 A GB 9400672A GB 2274468 B GB2274468 B GB 2274468B
- Authority
- GB
- United Kingdom
- Prior art keywords
- phosphorous
- molecular beam
- beam epitaxy
- effusion
- effusion apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/066—Heating of the material to be evaporated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES09300063A ES2067381B1 (en) | 1993-01-14 | 1993-01-14 | PHOSPHORUS EFFUSION CELL FOR EPITAXIA OF MOLECULAR BEAMS. |
GB9400573A GB9400573D0 (en) | 1993-01-14 | 1994-01-13 | Phosphorus effusion cell for molecular beam epitaxy |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9400672D0 GB9400672D0 (en) | 1994-03-09 |
GB2274468A GB2274468A (en) | 1994-07-27 |
GB2274468B true GB2274468B (en) | 1996-09-18 |
Family
ID=26154688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9400672A Expired - Lifetime GB2274468B (en) | 1993-01-14 | 1994-01-14 | Phosphorous effusion apparatus and method for molecular beam epitaxy |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2274468B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6030458A (en) * | 1997-02-14 | 2000-02-29 | Chorus Corporation | Phosphorus effusion source |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0132322A2 (en) * | 1983-06-29 | 1985-01-30 | Stauffer Chemical Company | Thermal crackers for forming pnictide films in high vacuum processes |
EP0154072A2 (en) * | 1984-02-17 | 1985-09-11 | Stauffer Chemical Company | Production of high purity white phosphorus |
US5041719A (en) * | 1990-06-01 | 1991-08-20 | General Electric Company | Two-zone electrical furnace for molecular beam epitaxial apparatus |
US5156815A (en) * | 1988-09-08 | 1992-10-20 | Board Of Regents, The University Of Texas System | Sublimating and cracking apparatus |
-
1994
- 1994-01-14 GB GB9400672A patent/GB2274468B/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0132322A2 (en) * | 1983-06-29 | 1985-01-30 | Stauffer Chemical Company | Thermal crackers for forming pnictide films in high vacuum processes |
EP0154072A2 (en) * | 1984-02-17 | 1985-09-11 | Stauffer Chemical Company | Production of high purity white phosphorus |
US5156815A (en) * | 1988-09-08 | 1992-10-20 | Board Of Regents, The University Of Texas System | Sublimating and cracking apparatus |
US5041719A (en) * | 1990-06-01 | 1991-08-20 | General Electric Company | Two-zone electrical furnace for molecular beam epitaxial apparatus |
Also Published As
Publication number | Publication date |
---|---|
GB2274468A (en) | 1994-07-27 |
GB9400672D0 (en) | 1994-03-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PE20 | Patent expired after termination of 20 years |
Expiry date: 20140113 |