GB2260517B - Plasma treatment process - Google Patents

Plasma treatment process

Info

Publication number
GB2260517B
GB2260517B GB9122244A GB9122244A GB2260517B GB 2260517 B GB2260517 B GB 2260517B GB 9122244 A GB9122244 A GB 9122244A GB 9122244 A GB9122244 A GB 9122244A GB 2260517 B GB2260517 B GB 2260517B
Authority
GB
United Kingdom
Prior art keywords
treatment process
plasma treatment
plasma
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9122244A
Other versions
GB9122244D0 (en
GB2260517A (en
Inventor
Roger James Williamson
David John Carter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Priority to GB9122244A priority Critical patent/GB2260517B/en
Publication of GB9122244D0 publication Critical patent/GB9122244D0/en
Publication of GB2260517A publication Critical patent/GB2260517A/en
Application granted granted Critical
Publication of GB2260517B publication Critical patent/GB2260517B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • ing And Chemical Polishing (AREA)
GB9122244A 1991-10-19 1991-10-19 Plasma treatment process Expired - Fee Related GB2260517B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9122244A GB2260517B (en) 1991-10-19 1991-10-19 Plasma treatment process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9122244A GB2260517B (en) 1991-10-19 1991-10-19 Plasma treatment process

Publications (3)

Publication Number Publication Date
GB9122244D0 GB9122244D0 (en) 1991-12-04
GB2260517A GB2260517A (en) 1993-04-21
GB2260517B true GB2260517B (en) 1995-05-03

Family

ID=10703236

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9122244A Expired - Fee Related GB2260517B (en) 1991-10-19 1991-10-19 Plasma treatment process

Country Status (1)

Country Link
GB (1) GB2260517B (en)

Also Published As

Publication number Publication date
GB9122244D0 (en) 1991-12-04
GB2260517A (en) 1993-04-21

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20041019