GB2253925A - A method of producing pin holes - Google Patents
A method of producing pin holes Download PDFInfo
- Publication number
- GB2253925A GB2253925A GB9204066A GB9204066A GB2253925A GB 2253925 A GB2253925 A GB 2253925A GB 9204066 A GB9204066 A GB 9204066A GB 9204066 A GB9204066 A GB 9204066A GB 2253925 A GB2253925 A GB 2253925A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- electrically conductive
- conductive material
- photoresist
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
A method of producing pinholes comprises (a) applying a first conductive layer (8) and first positive photoresist layer (10) to a support (4), (b) exposing through opaque spheres (12) and developing to produce images (14), (c) filling in the removed areas with a second conductive layer (16) and removing the resist image to leave holes (18), (d) coating with a second positive photoresist and selecting a mask (22) with images (24) so that only selected holes will be exposed, (e) exposing and developing to leave a resist image(s) over the non-exposed holes, (f) applying a third conductive layer (26) in the non-resist image areas and (g) removing the support (4) and first conductive layer (8) to leave pinhole(s) (18) in the selected area(s). <IMAGE>
Description
A METHOD OF PRODUCING PINHOLES
This invention relates to a method of producing pinholes.
Pinholes are well known and they are used in laser expanders, optical collimators, x-ray cameras, electronic microscopy, and in spatial filtering apparatus. The pinholes are usually formed by precision laser drilling in a substrate, for example a stainless steel disc. The pinholes need to be produced to a very high standard of accuracy and this is difficult and sometimes not possible with the laser drilling.
It is an aim of the present invention to obviate or reduce the above mentioned problem by producing the pinholes using a photolithographic method instead of the laser drilling.
Accordingly, this invention provides a method of producing pinholes, which method comprises the following steps:
(i) providing a substrate which is such that it is removable with a selective chemical solvent;
(ii) depositing a first layer of a first electrically conductive material on to the substrate;
(iii) depositing a second layer of a photor#esist on the first layer;
(iv) providing microspheres of mercury on the surface of the second layer;
(v) irradiating the second layer of photoresist from above to form perfectly circular images of the microspheres of mercury in the second layer;
(vi) removing the microspheres;
(vii) developing the second layer of photoresist to remove exposed photoresist;;
(viii) depositing a third layer of a second electrically conductive material on to the first layer, the second electrically conductive material being different from the first electrically conductive material such that the first and the second electrically conductive materials can be separated from each other with a selective etching agent;
( ix) removing the unexposed photoresist in the second layer to leave pinholes corresponding to the microspheres of mercury;
( x) providing a fourth layer of photoresist on the third layer;
(xi) choosing at least one pinhole for retention and covering that pinhole with a mask, the mask being such that it does not mask non-chosen pinholes and the remainder of the fourth layer;
(xii) irradiating-the fourth layer through the mask;
(xiii).removingthe mask;;
(xiv) developing the exposed photoresist in the fourth layer and leaving the unexposed photoresist in the chosen pinhole;
(xv) providing a fifth layer of a third electrically conductive material over the third layer but not over the unexposed photoresist, the third electrically conductive material being different from the first electrically conductive material;
(xvi) removing the unexposed photoresist of the fourth layer; (xvii) removing the substrate; and
(xviii) removing the first layer of the first electrically conductive material to leave the chosen pinhole in the third layer, with the third layer being supported by the fifth layer.
The method of the present invention may be used to produce pinholes at approximately half the cost of producing pinholes using other methods. Furthermore, the pinholes produced by the method of the present invention are of a superior quality to pinholes produced by laser drilling. Still further, the method of the present invention enables the pinholes to be produced in an economic commercial manner using existing equipment so that expensive new equipment does not have to be purchased.
The method of the invention may be used to produce one pinhole at a time or, if desired, two or more pinholes may be produced at a time.
Preferably, the substrate used in step (i) is flat. The method is preferably one in which the substrate comprises a plate member and a layer of soluble material on the plate member, the soluble material being one which is insoluble in a developer used to process the photoresist in steps (vii) and (xiv) but soluble in a different sivEnt in order to enable removal of the plate member in step (xvii).
The plate member is preferably a glass plate member but other plate members may be employed. The soluble material is preferably photoresist but other materials may be employed.
Thus, for example, the soluble material may be salt.
Generally, any suitable and appropriate soluble material or mixture of soluble materials may be employed.
Preferably, the first layer of the first electrically conductive material is deposited in step (ii) by vacuum deposition. Other methods of depositing the first layer may be employed.
Preferably, the first electrically conductive material is a metal. A presently preferred metal is copper but other metals such for example as zinc or silver may be employed. Electrically conductive non-metallic materials such for example as graphite may also be employed.
The microspheres of mercury are preferably provided in step (iv) by condensation. Preferably, the condensation is effected in an atmosphere which is super saturated with mercury vapor. Other methods of providing the microspheres of mercury in step (iv) may be employed.
The irradiation of the second layer of photoresist in step (v) is preferably effected using a collimated ultraviolet beam.
The microspheres of mercury are preferably removed in step (vi) mechanically.# The mechanical removal may be effected by washing.
The third layer of the second electrically conductive material is preferably deposited in step (viii) by electro deposition. Other methods of depositing the third layer may be employed.
The second electrically conductive material is preferably a metal. A presently preferred metal is nickel.
Other metals such for example as tungsten may be employed providing that the second electrically conductive material is different from the first electrically conductive material for the purposes of separation by the use of a selective chemical solvent. Electrically conductive non-metallic materials may also be employed, including semi-conductor materials.
Usually, the mask in step (xi) masks a slightly greater area than the chosen pinhole.
The mask used in step (xi) is preferably a transparent rigid mask which is non-transparent over the masking area for the chosen pinhole. The transparent rigid mask is preferably a glass mask. The transparent rigid mask may also be made of a plastics material.
The irradiation in step (xii) is preferably effected with a collimated ultraviolet beam. Other types of irradiation may be employed.
Preferably, the fifth layer of the third electrically conductive material is provided by electro deposition. Other methods of providing the third electrically conductive material may be employed.
The third electrically conductive material may be the same as the second electrically conductive material.
The substrate is preferably removed in step (xvii)by the use of a selective chemical solvent. Other methods of removing the substrate in step (xvii) may be employed.
The first layer of the first electrically conductive material is preferably removed in step (xviii) by the use of a selective etching agent. Other methods of removing the first layer may be employed.
The present invention also provides a pinhole when produced using photolithography and deposition of electrically conductive materials.
The present invention also provides a pinhole when produced by the method of the invention.
An embodiment of the invention will now be described sole#ly by way of example and with reference to the accompanying drawings in which:
Figures la - e illustrate steps (i) - (x) of the method of the invention; and
Figures 2a - f illustrate steps (xi) - (xviii) of the method of the invention.
Referring to Figure la, there is shown a subs#trate 2 which is flat and which comprises a glass plate member 4 covered with a soluble material in the form of photoresist 6. The photoresist 6 is soluble in appropriate chemical solvents so that the entire substrate 2 is one which is removable with a selective chemical solvent. A first layer 8 of a first electrically conductive material is shown deposited on the substrate 2. The first electrically conductive material is a metal in the form of copper.
A second layer 10 of a photoresist is shown deposited on the first layer 8. Microspheres 12 of mercury are shown deposited on the surface of the second layer 10.
The microspheres of mercury are deposited by condensation in an atmosphere which is super# saturated with mercury vapour. In the method of the invention the second layer of photoresist 10 is irradiated from above to form perfectly circular images 14 of the microspheres 12 in the second layer 10. As shown in Figure lc, the microspheres 12 are then removed together with the exposed photoresist in the second layer 10, thereby just to leave the images 14. The irradiation of the microspheres 12 is effected using a collimated ultra-violet beam.
The microspheres 12 are removed mechanically by washing.
The exposed photoresist in the second layer 10 is then removed by developing with. an appropriate developing solvent.
Referring now to Figure ld, a third layer 16 of a second electrically conductive material is deposited on to the first layer 8. The second electrically conductive material is a metal in the form of nickel. Thus the second electrically conductive material is different from the first electrically conductive material whereby the two electrically conductive materials can be separated from each other as will be explained in more detail herein below using a selective etching agent. As can be seen from Figure ld, the third layer 16 is not quite as thick as the images 14 and does not cover the images 14.
Referring now to Figure le, it will be seen that the images 14 as formed in the second layer 10 are removed to leave pinholes 18 corresponding to the microspheres 12.
The third layer 16 may in practice be provided with a large number of the pinholes 18. These pinholes will usually be inspected and the single most suitable pinhole 18 will be selected for further isolation. If desired however two or more pinholes 18 may be selected for further isolation.
The isolation of the left hand pinhole 18 as shown in Figure le will now be described with reference to Figures 2a - f.
In Figure 2a, the third layer 16 and the pinholes 18 are covered with a fourth layer 20 of photoresist.
As shown in Figure 2b, the left hand pinhole 18 of Figure lb has been chosen as the pinhole for retention. A rigid transparent glass mask 22 is provided.
This mask 22 has a non-transparent area 24 and the area 24 is slightly larger than and is positioned above the chosen pinhole 18. The remainder of the mask 22 is transparent so that it does not mask the non-chosen pinhole (which is the pinhole of the right as shown in Figure 1) and so that it also does not mask the remainder of the fourth layer 20.
The fourth layer 20 is then irradiated through the mask 22 using a collimated ultrviolet beam. As shown in Figure 2b, the mask 22 is then removed together with the exposed photoresist in the fourth layer 20. Thus the fourth layer 20 only remains in the chosen pinhole 18 and extending slightly proud of the pinhole 18. The remaining part of the fourth layer 20 acts as a shield to protect the pinhole 18.
As shown in Figure 2d, a fifth layer 26 of a third electrically conductive material is provided on top of the third layer 16. The third electrically conductive
material is different from the first electrically
conductive material. The third electrically conductive
material is nickel, which is the same as the second
electrically conductive material. The third electrically
conductive material is provided by electrodeposition. The
fifth layer 26 does not extend to the top of the remaining part of the fourth layer 20 and it does not cover this
remaining part of the fourth layer 20, see Figure 2d.
Using a selective chemical solvent, the fourth layer 20 in the pinhole 18 is removed. Using the same or if desired a different chemical solvent, the photoresist 6 is removed so that the substrate 2 is effectively removed from the first layer 8, the third layer 16 and the fifth layer 26.
Using a further selective etching agent, the first layer 8 is selectively etched. Thus, as shown in Figure 2f, there is then just left the third layer 16 with the chosen pinhole 18 supported by the fifth layer 26. The fifth layer 26 has an aperture 28 which is larger than the pinhole 18 so that the fifth layer 26 does not interfere with the pinhole 18.
The pinhole 18 is able to be formed to a more optically perfect standard than is normally possible using laser beam drilling of a steel sheet as is presently employed.
It is to be appreciated that the embodiment of the invention described above with reference to the accompanying drawings has been given by way of example only and that modifications may be effected. Thus, for example, various types of known positive photoresists and various types of selective chemical solvents may be# employed.
Claims (27)
1. - A method of producing pinholes, which method comprises the following steps:
(i) providing a substrate which is such that it is removable with a selective chemical solvent;
(ii) depositing a first layer of a first electrically conductive material on to the substrate;
(iii) depositing a second layer of a photoresist on the first layer;
(iv) providing microspheres of mercury on the surface of the second layer;
(v) irradiating the second layer of photoresist from above to form perfectly circular images of the microspheres of mercury in the second layer;
(vi) removing the microspheres;
(vii) developing the second layer of photoresist to remove exposed photoresist;;
(viii) depositing a third layer of a second electrically conductive material on to the first layer, the second electrically conductive material being different from the first electrically conductive material such that the first and the second electrically conductive
materials can be separated from each other' with a
selective etching agent;.
(ix) removing the unexposed photoresist in the
second layer to Leave pinholes corresponding to the
microspheres of mercury;
(x) providing a fourth layer of photoresist
on the third layer.;
(xi) choosing at least one pinhole for retention and covering that pinhole with a mask, the mask being such that it does not mask non-chosen pinholes and the remainder of the fourth layer;
(xii) irradiating the fourth layer through the mask;
(xiii) removing the mask;
(xiv) developing the exposed photoresist in the fourth layer and leaving the unexposed photoresist in the chosen pinhole;
(xv) providing a fifth layer of a third electrically conductive material over the third layer but not over the unexposed photoresist, the third electrically conductive material being different from the first electrically conductive material;;
(xvi) removing the unexposed photoresist of the fourth layer;
(xvii) removing the substrate; and
(xviii) removing the first layer of the first electrically conductive material to leave the chosen pinhole in the third layer, with the third layer being supported by the fifth layer.
2. A method according to claim 1 in which the substrate used in step (i) is flat.
3. A method according to claim 1 or claim 2 in which the substrate comprises a plate member and a layer of soluble material on the plate member, the soluble material being one which is insoluble in a developer used to process the photoresist in steps(vii)and (xiv) but soluble in a.
different solvent in order to enable removal of the plate member in step (xvii).
4. A method according to claim 3 in which the plate member is a glass plate member.
5. A method according to claim 3 or claim 4 in which the soluble material is photoresist.
6. A method according to any one of the preceding claims in which the first layer of the first electrically conductive material is deposited in step (ii) by vacuum deposition.
7. A method according to any one of the preceding claims in which the first electrically conductive material is a metal.
8, A method according to claim 7 in which the metal is copper.
9. A method according to any one of the preceding claims in which the microspheres of mercury are provided in step (iv) by condensation.
10. A method according to claim 9 in which the condensation is effected in an atmosphere which is super saturated with mercury vapour.
11. A method according to any one of the preceding claims in which the irradiation of the second layer of photoresist in step (v) is effected using a collimated ultra-violet beam.
12. A method according to any one of the preceding claims in which the microspheres are removed in step (vi) mechanically.
13. A method according to claim 14 in which the microspheres are removed mechanically by washing.
14. A method according to any one of the preceding claims in which the third layer of the second electrically conductive material is deposited in step (viii) by electrodeposition.
15. A method according to any one of the preceding claims in which the second electrically conductive material is a metal.
16. A method according to claim 15 in which the metal is nickel.
17. A method according to any one of the preceding claims in which the mask in step(xi) tasks a slightly greater area than the chosen pinhole.
18. A method according to any one of the preceding claims in which the mask used in step (xi)is a transparent rigid mask which is non-transparent over the masking area for the pinhole.
19 A method according to claim 18 in which the transparent rigid mask is a glass mask.
20. A method according to any one of the preceding claims in which the irradiation in step (xii) is effected with a collimated ultraviolet beam.
21 A method according to any one of the preceding claims in which the fifth layer of the third electrically conducted material is provided by electrodeposition.
22. A method according to any one of the preceding claims in which the third electrically conductive material is the same as the second electrically conductive material.
23. A method according to any one of the preceding claims in which the substrate is removed in step (xvii) by the use of a selective chemical solvent.
24. A method according to any one of the preceding claims in which the first layer of the first electrically conductive material is removed in step (xviii) by the use of a selective etching agent.
25. A method of producing pinholes, substantially as herein described with reference to the accompanying drawings.
26. A pinhole when produced by using photolithography and deposition of electrically conductive materials.
27. A pinhole according to claim 26 when produced by a method as claimed in any one of claims 1 to 25.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB919104132A GB9104132D0 (en) | 1991-02-27 | 1991-02-27 | Photolithographical method of producing pinholes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9204066D0 GB9204066D0 (en) | 1992-04-08 |
| GB2253925A true GB2253925A (en) | 1992-09-23 |
Family
ID=10690677
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB919104132A Pending GB9104132D0 (en) | 1991-02-27 | 1991-02-27 | Photolithographical method of producing pinholes |
| GB9204066A Withdrawn GB2253925A (en) | 1991-02-27 | 1992-02-26 | A method of producing pin holes |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB919104132A Pending GB9104132D0 (en) | 1991-02-27 | 1991-02-27 | Photolithographical method of producing pinholes |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB9104132D0 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2725558A1 (en) * | 1994-10-10 | 1996-04-12 | Commissariat Energie Atomique | METHOD FOR FORMING HOLES IN A PHOTOSENSITIVE RESIN LAYER APPLICATION TO THE MANUFACTURE OF ELECTRON SOURCES WITH EMISSIVE CATHODES WITH MICROPOINTES AND DISPLAY FLAT SCREENS |
| FR2726098A1 (en) * | 1994-10-24 | 1996-04-26 | Commissariat Energie Atomique | PROCESS FOR PHOTOLITHOGRAVING DENSITY CIRCULAR PATTERNS |
| FR2737928A1 (en) * | 1995-08-17 | 1997-02-21 | Commissariat Energie Atomique | DEVICE FOR INSOLATING MICROMETRIC AND / OR SUBMITROMETRIC AREAS IN A PHOTOSENSITIVE LAYER AND METHOD OF MAKING PATTERNS IN SUCH A LAYER |
| FR3052880A1 (en) * | 2016-06-21 | 2017-12-22 | Hydromecanique & Frottement | SYSTEM AND METHOD FOR MAKING AN OPTICAL MASK FOR SURFACE MICRO-TEXTURATION, INSTALLATION AND SURFACE MICRO-TEXTURING METHOD |
| FR3052879A1 (en) * | 2016-06-21 | 2017-12-22 | Hydromecanique & Frottement | SYSTEM AND METHOD FOR MAKING AN OPTICAL MASK FOR SURFACE TREATMENT, INSTALLATION AND SURFACE TREATMENT METHOD |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113867043B (en) * | 2020-06-30 | 2023-01-10 | 京东方科技集团股份有限公司 | Light-emitting substrate, preparation method thereof and display device |
-
1991
- 1991-02-27 GB GB919104132A patent/GB9104132D0/en active Pending
-
1992
- 1992-02-26 GB GB9204066A patent/GB2253925A/en not_active Withdrawn
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5669800A (en) * | 1994-10-10 | 1997-09-23 | Commissariat A L'energie Atomique | Process of forming holes in a photosensitive resin layer to produce cathodes with microtips |
| EP0707237A1 (en) * | 1994-10-10 | 1996-04-17 | Commissariat A L'energie Atomique | Process for the fabrication of holes in photoresist layers, use for the fabrication of electron sources comprising emissive cathodes with microtips and flat display screens |
| FR2725558A1 (en) * | 1994-10-10 | 1996-04-12 | Commissariat Energie Atomique | METHOD FOR FORMING HOLES IN A PHOTOSENSITIVE RESIN LAYER APPLICATION TO THE MANUFACTURE OF ELECTRON SOURCES WITH EMISSIVE CATHODES WITH MICROPOINTES AND DISPLAY FLAT SCREENS |
| FR2726098A1 (en) * | 1994-10-24 | 1996-04-26 | Commissariat Energie Atomique | PROCESS FOR PHOTOLITHOGRAVING DENSITY CIRCULAR PATTERNS |
| EP0709741A1 (en) * | 1994-10-24 | 1996-05-01 | Commissariat A L'energie Atomique | Photolithographic process for circular dense patterns |
| US5776644A (en) * | 1994-10-24 | 1998-07-07 | Commissariat A L'energie Atomique | Photolithographic method for high resolution circle patterning utilizing calibrated opaque microspheres |
| FR2737928A1 (en) * | 1995-08-17 | 1997-02-21 | Commissariat Energie Atomique | DEVICE FOR INSOLATING MICROMETRIC AND / OR SUBMITROMETRIC AREAS IN A PHOTOSENSITIVE LAYER AND METHOD OF MAKING PATTERNS IN SUCH A LAYER |
| US5700627A (en) * | 1995-08-17 | 1997-12-23 | Commissariat A L'energie Atomique | Device for the insolation of micrometric and/or submicrometric areas in a photosensitive layer and a method for the creation of patterns in such a layer |
| EP0759578A1 (en) * | 1995-08-17 | 1997-02-26 | Commissariat A L'energie Atomique | Apparatus for the exposure of micropattern in a photosensitive layer and process for creating a pattern therein |
| FR3052880A1 (en) * | 2016-06-21 | 2017-12-22 | Hydromecanique & Frottement | SYSTEM AND METHOD FOR MAKING AN OPTICAL MASK FOR SURFACE MICRO-TEXTURATION, INSTALLATION AND SURFACE MICRO-TEXTURING METHOD |
| FR3052879A1 (en) * | 2016-06-21 | 2017-12-22 | Hydromecanique & Frottement | SYSTEM AND METHOD FOR MAKING AN OPTICAL MASK FOR SURFACE TREATMENT, INSTALLATION AND SURFACE TREATMENT METHOD |
| WO2017220930A1 (en) * | 2016-06-21 | 2017-12-28 | H.E.F. | System and method for producing an optical mask for surface microtexturing, and surface microtexturing plant and method |
| WO2017220929A1 (en) * | 2016-06-21 | 2017-12-28 | H.E.F. | System and method for producing an optical mask for surface treatment, and surface treatment plant and method |
| CN109416506A (en) * | 2016-06-21 | 2019-03-01 | H.E.F.公司 | The device and method of the manufacture system and method and surface microscopic veining of optical mask for surface microscopic veining |
| US10969679B2 (en) | 2016-06-21 | 2021-04-06 | H.E.F. | System and method for producing an optical mask for surface microtexturing, and surface microtexturing plant and method |
| US10969678B2 (en) | 2016-06-21 | 2021-04-06 | H.E.F. | System and method for producing an optical mask for surface treatment, and surface treatment plant and method |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9204066D0 (en) | 1992-04-08 |
| GB9104132D0 (en) | 1991-04-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |