GB2252886A - I c sensor - Google Patents

I c sensor

Info

Publication number
GB2252886A
GB2252886A GB9206163A GB9206163A GB2252886A GB 2252886 A GB2252886 A GB 2252886A GB 9206163 A GB9206163 A GB 9206163A GB 9206163 A GB9206163 A GB 9206163A GB 2252886 A GB2252886 A GB 2252886A
Authority
GB
United Kingdom
Prior art keywords
realised
charge sensing
charge
stage
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB9206163A
Other versions
GB9206163D0 (en
GB2252886B (en
Inventor
Peter Brian Denyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VLSI Vision Ltd
Original Assignee
VLSI Vision Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB898921538A external-priority patent/GB8921538D0/en
Priority claimed from PCT/GB1990/001452 external-priority patent/WO1991004633A1/en
Application filed by VLSI Vision Ltd filed Critical VLSI Vision Ltd
Priority to GB9206163A priority Critical patent/GB2252886B/en
Publication of GB9206163D0 publication Critical patent/GB9206163D0/en
Publication of GB2252886A publication Critical patent/GB2252886A/en
Application granted granted Critical
Publication of GB2252886B publication Critical patent/GB2252886B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

An integrated circuit image array sensor is described in which charge sensing circuitry is implemented within a restricted cell pitch and which performs preliminary charge sensing as close as practicable to the cell site. The compact array is realised by incorporating a charge sensing amplifier (20) at the top of each array bit-line (18). Each charge sensing amplifier (20) has two amplification stages (34, 36); the first stage (34) performs preliminary detection of the charge accumulating in a cell (32) in response to incident radiation by converting this to a voltage which is stored capacitively prior to read-out, and the second stage (36) produces the required output. The circuit design is described as realised on CMOS but can be realised in a number of different fabrication technologies.
GB9206163A 1989-09-23 1992-03-20 I C Sensor Expired - Fee Related GB2252886B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9206163A GB2252886B (en) 1989-09-23 1992-03-20 I C Sensor

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB898921538A GB8921538D0 (en) 1989-09-23 1989-09-23 Circuits for integrated mos array sensors
GB909009332A GB9009332D0 (en) 1989-09-23 1990-04-26 Circuits for integrated mos array sensors
PCT/GB1990/001452 WO1991004633A1 (en) 1989-09-23 1990-09-20 I.c. sensor
GB9206163A GB2252886B (en) 1989-09-23 1992-03-20 I C Sensor

Publications (3)

Publication Number Publication Date
GB9206163D0 GB9206163D0 (en) 1992-05-27
GB2252886A true GB2252886A (en) 1992-08-19
GB2252886B GB2252886B (en) 1994-03-09

Family

ID=27264705

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9206163A Expired - Fee Related GB2252886B (en) 1989-09-23 1992-03-20 I C Sensor

Country Status (1)

Country Link
GB (1) GB2252886B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2044996A (en) * 1979-03-08 1980-10-22 Japan Broadcasting Corp Solid stage photo-electric converting device for solid state imaging apparatus
EP0260954A2 (en) * 1986-09-19 1988-03-23 Canon Kabushiki Kaisha Solid state image pickup apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2044996A (en) * 1979-03-08 1980-10-22 Japan Broadcasting Corp Solid stage photo-electric converting device for solid state imaging apparatus
EP0260954A2 (en) * 1986-09-19 1988-03-23 Canon Kabushiki Kaisha Solid state image pickup apparatus

Also Published As

Publication number Publication date
GB9206163D0 (en) 1992-05-27
GB2252886B (en) 1994-03-09

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040920