GB2227119B - A method of silicon integrated circuit manufacture - Google Patents

A method of silicon integrated circuit manufacture

Info

Publication number
GB2227119B
GB2227119B GB8900922A GB8900922A GB2227119B GB 2227119 B GB2227119 B GB 2227119B GB 8900922 A GB8900922 A GB 8900922A GB 8900922 A GB8900922 A GB 8900922A GB 2227119 B GB2227119 B GB 2227119B
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
silicon integrated
circuit manufacture
manufacture
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8900922A
Other versions
GB8900922D0 (en
GB2227119A (en
Inventor
Martin Clive Wilson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Semiconductors Ltd
Plessey Co Ltd
BAE Systems Electronics Ltd
Original Assignee
GEC Marconi Ltd
Plessey Semiconductors Ltd
Plessey Co Ltd
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GEC Marconi Ltd, Plessey Semiconductors Ltd, Plessey Co Ltd, Marconi Co Ltd filed Critical GEC Marconi Ltd
Priority to GB8900922A priority Critical patent/GB2227119B/en
Publication of GB8900922D0 publication Critical patent/GB8900922D0/en
Publication of GB2227119A publication Critical patent/GB2227119A/en
Application granted granted Critical
Publication of GB2227119B publication Critical patent/GB2227119B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
GB8900922A 1989-01-17 1989-01-17 A method of silicon integrated circuit manufacture Expired - Lifetime GB2227119B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8900922A GB2227119B (en) 1989-01-17 1989-01-17 A method of silicon integrated circuit manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8900922A GB2227119B (en) 1989-01-17 1989-01-17 A method of silicon integrated circuit manufacture

Publications (3)

Publication Number Publication Date
GB8900922D0 GB8900922D0 (en) 1989-03-08
GB2227119A GB2227119A (en) 1990-07-18
GB2227119B true GB2227119B (en) 1992-11-18

Family

ID=10650118

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8900922A Expired - Lifetime GB2227119B (en) 1989-01-17 1989-01-17 A method of silicon integrated circuit manufacture

Country Status (1)

Country Link
GB (1) GB2227119B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0260059A1 (en) * 1986-09-08 1988-03-16 BRITISH TELECOMMUNICATIONS public limited company Self-aligned bipolar fabrication process
GB2202370A (en) * 1987-02-27 1988-09-21 British Telecomm Self-aligned bipolar fabrication process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0260059A1 (en) * 1986-09-08 1988-03-16 BRITISH TELECOMMUNICATIONS public limited company Self-aligned bipolar fabrication process
GB2202370A (en) * 1987-02-27 1988-09-21 British Telecomm Self-aligned bipolar fabrication process

Also Published As

Publication number Publication date
GB8900922D0 (en) 1989-03-08
GB2227119A (en) 1990-07-18

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040117