GB2212270A - Gas sensor using phthalocyanine - Google Patents

Gas sensor using phthalocyanine Download PDF

Info

Publication number
GB2212270A
GB2212270A GB8825692A GB8825692A GB2212270A GB 2212270 A GB2212270 A GB 2212270A GB 8825692 A GB8825692 A GB 8825692A GB 8825692 A GB8825692 A GB 8825692A GB 2212270 A GB2212270 A GB 2212270A
Authority
GB
United Kingdom
Prior art keywords
gas sensor
sensor according
phthalocyanine
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8825692A
Other versions
GB8825692D0 (en
Inventor
Thomas Alwyn Jones
Barry Bott
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Development Corp UK
Original Assignee
National Research Development Corp UK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Development Corp UK filed Critical National Research Development Corp UK
Publication of GB8825692D0 publication Critical patent/GB8825692D0/en
Publication of GB2212270A publication Critical patent/GB2212270A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/126Composition of the body, e.g. the composition of its sensitive layer comprising organic polymers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Description

1 ill t, 0 221227 0 131512 - 1 GAS SENSOR USING PHTHALOCYANINE This
invention relates to a gas sensor using metal phthalocyanine. Sensors for strongly electron accepting gases, in particular N02 and C12, are described in Sensors & Actuators 5098043-53. These sensors are based on the electrical conductivity changes effected by the adsorption of these gases on vacuum- sublimed films of lead phthalocyanine. While insensitive to most other gases, these sensors can detect 1 ppb N02 in air and 0.1 PPM C12 in air. Similar sensors using metal-free phthalocyanine instead of lead phthalocyanine responded similarly but because of the very low conductivity of that material are difficult to use at concentrations below 100 ppb N02 in air. Unfortunately the response time and sensitivity of these sensors are strongly temperature-dependent, the response time being also concentration-dependent. At 1700C, the sensor on exposure to a gas (< I ppm) reaches 90% of its steady-state response in 100 seconds, but at 1250C this takes over 600 seconds. At gas concentrations towards 100 ppm the response times are more than five times as long. Likewise, on stepchange removal of the < 1 ppm gas, at 1700C the sensor recovers 90% of 20 its change within 120 seconds, but at 12511C this takes 600 seconds, and again more than five times as long on removing a 100 ppm gas. The optimum operating temperature for such sensors is typically 1600C - 1700C. Better performance is possible at 2300C - 2400C but shortens the lifetime of the sensor. 25 It has been suggested to overcome this problem by using a metal phthalocyanine film which has been deposited by repeated dipping of a substrate to deposit a monolayer of aligned molecules each dip (i.e. a Langmuir-Blodgett film). While fast response times at room temperature can be achieved, the recovery time of the sensor is still unacceptably long.
According to the present invention, a gas sensor comprising a layer, exposable to gas, of a phthalocyanine on a substrate, and means for measuring the conductivity of the layer, is characterised in that the layer is continuous and is mostly crystalline and (where such exists) preferably crystallised as the -polymorph. Its thickness is in practice most conveniently 05 at least 2000 nm, preferably at least 3000 nm, for example 4000nm (and it may exceed 5000nm), but may be as thin as the substrate surface topography allows for continuity; Langmuir-Blodgett films, which are of molecular thickness only, are usable but depend on the substrate's being very smooth to maintain the 10 film's continuity and integrity. The layer when originally laid down (e.g. by vacuum sublimation) may be at least partially amorphous. Complete crystallinity may be achieved by annealing the at least partially amorphous layer, preferably for at least 15 (more preferably 20) e.g. 60 minutes, preferably at at least 15 2500C, more preferably at least 3200C, conveniently in air. The phthalocyanine may be, in ascending order of preference, magnesium, iron, cobalt, nickel, copper, zinc, hydrogen and lead. Hydrogen (metal-free) phthalocyanine can be used only if the substrate is relatively non conductive. 20 The substrate may be pressed sintered A1203 or, for thinner layers, may be glass, sapphire, silicon or pressed-disc KBr. In principle the substrate may be any material which has a surface conductance lower than the phthalocyanine film, does not chemically react with the phthalocyanine and is stable to temperatures above 3500C.
Since the sensor may be desired to operate at high temperature, some means of heating the substrate may be associated with it. Platinum-based heaters are preferable since their high temperature coefficient of resistance makes them suitable for measuring temperatures and the high stability of the metal allows high operating temperatures.
The invention will now be described by way of example. Fig. I shows schematically an A120, substrate 3 mm x 3 mm square and 0.4 mm thick, having on one surface 1 a printed platinum heater trimmed to a OOC resistance value of 10:t O-M, the obverse side 2 being an interdigitated platinum electrode system, V four fingers per electrode with a gap between the electrodes of 125pm Films of several of the phthalocyanines were vacuum sublimed over this electrode array in a conventional 'vacuum coating unit. In a preferred case, lead phthalocyanine was used, deposited to a thickness of 4000 nm.
Such substrates are not suitable for Langmuir-Blodgett films which may require film deposition on to smooth surfaces followed by deposition of the electrodes over the phthahlocyanine film. Although other means of film deposition such as from solution would in principle be usable, most of the phthalocyanines are not easily dissolved even in mixed organic solvents.
The deposited film was heated to 3400C for 20 minutes. (3200C at 20 minutes is of borderline reliability, while at 3000C heating must be continued for hours if not days to achieve the desired effect.) It is likely that the heating not only ensures crystallinity of the film and formation of the polymorph but also causes an interaction of the solid surface with atmospheric oxygen, so that the chemical nature of the solid surface is changed and the mechanism of adsorption of strong electron acceptor gases changed. A combination of this crystallisation and interaction and CL4 polymorphic transformation may occur so that the phthalocyanine material is changed both physically and chemically.
Following the heating, the films are lower in conductance and less sensitive, but faster responding to changes in concentration of electron acceptor gases and faster recovering when electron acceptor gases are removed. A gas sensor using these films can have a performance at room temperature better than that of a conventional gas sensor at 1701C. Thanks to this lower temperature of operation, less power is consumed by the gas sensor according to the invention. This makes it more suitable for portable and spot-readings equipment.
Sensors having these annealed films show the following properties:
room temperature ISOCIC minimum detectable > 10Oppb < 10Oppb concentration of NO response time to 90% < 60 sec of steady-state value < 20 sec recovery time to 90% < 60 sec < 20 sec selectivity sensitive to only no sensitivity strongly electron to electron donor accepting gases gases e.g. H2S.
e.g. N02, C12, 03.
effect of water vapour depresses sensitivity no effect The effect of water vapour at lower temperatures may be due to physisorption of water on the film.
4 is

Claims (9)

  1. I - A gas sensor comprising a layer, exposable to gas, of a phthalocyanine on a substrate, and means for measuring the conductivity of the layer, characterised in that the layer is continuous and mostly crystalline.
  2. 2. A gas sensor according to Claim 1, wherein the layer is crystallised as the -polymorph.
  3. 3. A gas sensor according to Claim I or 2, wherein the layer at least 2000 nm thick.
  4. 4. A gas sensor according to Claim 3, wherein the layer is at least 3000 nm thick.
  5. 5. A gas sensor according to any preceding claim wherein the phthalocyanine is any one of magnesium, iron, cobalt, nickel, copper, zinc, hydrogen (where the substrate has a high resistance), and lead.
  6. 6. A gas sensor according to any preceding claim, wherein the substrate is any one of alumina, glass, sapphire, silicon or pressed-disc KBr.
  7. 7. A gas sensor according to any preceding claim, wherein the crystallinity of the phthalocyanine is achieved by heating to a temperature of at least 2500C.
  8. 8. A gas sensor according to Claim 7, wherein said temperature is at least 3200C.
  9. 9. A gas sensor according to Claim 7 or 8, wherein the heating is in air.
    Pnblinhed 1f389 at The Patent 0Mce. State House, 86 71 High Holborn, London WC1R 4TP. Further copies maybe obtained from The P tentomce- - - -- - __------ 11---
GB8825692A 1987-11-06 1988-11-03 Gas sensor using phthalocyanine Withdrawn GB2212270A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB878726079A GB8726079D0 (en) 1987-11-06 1987-11-06 Gas sensor

Publications (2)

Publication Number Publication Date
GB8825692D0 GB8825692D0 (en) 1988-12-07
GB2212270A true GB2212270A (en) 1989-07-19

Family

ID=10626568

Family Applications (2)

Application Number Title Priority Date Filing Date
GB878726079A Pending GB8726079D0 (en) 1987-11-06 1987-11-06 Gas sensor
GB8825692A Withdrawn GB2212270A (en) 1987-11-06 1988-11-03 Gas sensor using phthalocyanine

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB878726079A Pending GB8726079D0 (en) 1987-11-06 1987-11-06 Gas sensor

Country Status (2)

Country Link
DE (1) DE3836819A1 (en)
GB (2) GB8726079D0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2239706A (en) * 1989-11-08 1991-07-10 Nat Res Dev Gas sensors and compounds suitable therefor

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991006001A1 (en) * 1989-10-17 1991-05-02 E.T.R. Elektronik Technologie Rump Gmbh Gas sensor arrangement
DE4111113C2 (en) * 1991-04-03 2000-09-21 Itvi Inttech Venture Investa Phthalocyanine sensor for the purpose of detecting nitrogen oxides in the air
DE4302747C1 (en) * 1993-02-01 1994-03-17 Fraunhofer Ges Forschung Phthalocyanine type gas sensor for trace gas determination - has passivation layer to prevent contamination of sensitive layer
DE4317879B4 (en) * 1993-05-28 2005-02-10 I.T.V.I. International Techno Venture Invest Ag Apparatus for detecting inorganic-organic compounds, anesthetic gases, pesticides, insecticides and halogenated hydrocarbons in gas streams by means of semiconductor gas sensors
BE1010571A3 (en) * 1996-08-19 1998-10-06 Haan Andre Method of manufacturing an element form of semiconductor (s).
CN113777137A (en) * 2021-09-24 2021-12-10 昆明学院 Gas sensor based on chromium phthalocyanine monomolecular layer film and preparation method and application thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1578769A (en) * 1976-10-12 1980-11-12 Cerberus Ag Method of preparing gas sensor elements and sensor elements and sensor elements produced thereby
GB1602642A (en) * 1977-03-11 1981-11-11 Frey Y A R Detection of atmospheric conditions

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1578769A (en) * 1976-10-12 1980-11-12 Cerberus Ag Method of preparing gas sensor elements and sensor elements and sensor elements produced thereby
GB1602642A (en) * 1977-03-11 1981-11-11 Frey Y A R Detection of atmospheric conditions

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
pages 27-37 *
pages 43-53 *
pages 67 to 69 *
Sensors and Actuators 12 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2239706A (en) * 1989-11-08 1991-07-10 Nat Res Dev Gas sensors and compounds suitable therefor
GB2239706B (en) * 1989-11-08 1993-05-12 Nat Res Dev Gas sensors and compounds suitable therefor

Also Published As

Publication number Publication date
GB8825692D0 (en) 1988-12-07
GB8726079D0 (en) 1987-12-09
DE3836819A1 (en) 1989-05-18

Similar Documents

Publication Publication Date Title
Kim Microheater-integrated single gas sensor array chip fabricated on flexible polyimide substrate
Adamian et al. Smoke sensor on the base of Bi2O3 sesquioxide
WO2020263006A1 (en) Room temperature-driven gas sensor, method for manufacturing same, and gas sensor array
Liu et al. Surface morphology and gas sensing characteristics of nickel phthalocyanine thin films
US4324760A (en) Hydrogen detector
JPS6238313B2 (en)
US10571420B2 (en) Nanolaminate gas sensor and method of fabricating a nanolaminate gas sensor using atomic layer deposition
GB2212270A (en) Gas sensor using phthalocyanine
Passard et al. Doping mechanisms of phthalocyanines by oxidizing gases: application to gas sensors
Althainz et al. Reception tuning of gas-sensor microsystems by selective coatings
Hoflund et al. Surface characteristics of antimony-doped tin oxide films
JPH053895B2 (en)
US6059937A (en) Sensor having tin oxide thin film for detecting methane gas and propane gas, and process for manufacturing thereof
Michel et al. Structural and electrical characterization of PVD-deposited SnO2 films for gas-sensor application
Cranny et al. A comparison of thick-and thin-film gas-sensitive organic semiconductor compounds
Seki et al. Evolution of water vapor from indium-tin-oxide thin films fabricated by various deposition processes
Guillen et al. Electrical contacts on polyimide substrates for flexible thin film photovoltaic devices
Kiriakidis et al. Highly sensitive InOx ozone sensing films on flexible substrates
US5373738A (en) Humidity detector
JP3757667B2 (en) Carbon dioxide sensor element
Luo Indium tin oxide thin film strain gages for use at elevated temperatures
JP2001343345A (en) Gas sensor element
JPH01309385A (en) Solar cell
Yoo NOx Sensing Characteristics of the $ WO_ {3} $-Based Thin-Film Gas Sensors
Hayashi et al. Diamond film gas sensors for leak detection of semiconductor doping gases

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)