GB2201058B - Mosfet protection circuit - Google Patents

Mosfet protection circuit

Info

Publication number
GB2201058B
GB2201058B GB8702783A GB8702783A GB2201058B GB 2201058 B GB2201058 B GB 2201058B GB 8702783 A GB8702783 A GB 8702783A GB 8702783 A GB8702783 A GB 8702783A GB 2201058 B GB2201058 B GB 2201058B
Authority
GB
United Kingdom
Prior art keywords
protection circuit
mosfet protection
mosfet
circuit
protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8702783A
Other versions
GB8702783D0 (en
GB2201058A (en
Inventor
Michel Bron
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Priority to GB8702783A priority Critical patent/GB2201058B/en
Publication of GB8702783D0 publication Critical patent/GB8702783D0/en
Publication of GB2201058A publication Critical patent/GB2201058A/en
Application granted granted Critical
Publication of GB2201058B publication Critical patent/GB2201058B/en
Priority to HK131493A priority patent/HK131493A/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
GB8702783A 1987-02-07 1987-02-07 Mosfet protection circuit Expired - Lifetime GB2201058B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB8702783A GB2201058B (en) 1987-02-07 1987-02-07 Mosfet protection circuit
HK131493A HK131493A (en) 1987-02-07 1993-12-02 Mosfet protection circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8702783A GB2201058B (en) 1987-02-07 1987-02-07 Mosfet protection circuit

Publications (3)

Publication Number Publication Date
GB8702783D0 GB8702783D0 (en) 1987-03-11
GB2201058A GB2201058A (en) 1988-08-17
GB2201058B true GB2201058B (en) 1991-01-23

Family

ID=10611884

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8702783A Expired - Lifetime GB2201058B (en) 1987-02-07 1987-02-07 Mosfet protection circuit

Country Status (2)

Country Link
GB (1) GB2201058B (en)
HK (1) HK131493A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5029131A (en) * 1988-06-29 1991-07-02 Seeq Technology, Incorporated Fault tolerant differential memory cell and sensing
GB2222045B (en) * 1988-08-19 1993-04-07 Motorola Inc Transistor breakdown protection circuit
US10734988B2 (en) 2017-12-22 2020-08-04 Hewlett Packard Enterprise Development Lp Methods and apparatus to generate a circuit protection voltage

Also Published As

Publication number Publication date
GB8702783D0 (en) 1987-03-11
HK131493A (en) 1993-12-10
GB2201058A (en) 1988-08-17

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Legal Events

Date Code Title Description
746 Register noted 'licences of right' (sect. 46/1977)

Effective date: 19990930

732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PE20 Patent expired after termination of 20 years

Effective date: 20070206