GB2191631A - Laser array - Google Patents
Laser array Download PDFInfo
- Publication number
- GB2191631A GB2191631A GB08613937A GB8613937A GB2191631A GB 2191631 A GB2191631 A GB 2191631A GB 08613937 A GB08613937 A GB 08613937A GB 8613937 A GB8613937 A GB 8613937A GB 2191631 A GB2191631 A GB 2191631A
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- GB
- United Kingdom
- Prior art keywords
- elements
- array
- output
- laser
- regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/2804—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals forming multipart couplers without wavelength selective elements, e.g. "T" couplers, star couplers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4062—Edge-emitting structures with an external cavity or using internal filters, e.g. Talbot filters
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Lasers (AREA)
Description
1 GB 2 191 631 A 1
SPECIFICATION
Laser array This invention relates to laser arrays. A side-by-side array of n parallel identical injection single-mode 5 waveguide laser elements with a close enough spacing to provide significant mutual evanescent coupling between adjacent elements, hereinafter referred to as an evanescent coupled array, has been found typically to have a higher lasing threshold for the zero order supermode in which the light is in phase in all the elements than for the (n-1)th order supermode in which the light propagates down each element in antiphase with that propagating in its two immediately adjacent elements. The zero order supermode, which has a single-iobed 10 far field pattern, is generally preferred to the (n-1)th order supermode, which has a twin-lobed far field pattern. The design of such arrays can be modified to provide the zero order supermode with the lowest threshold, but it is generally found that operation of the zero order supermode tends to be unstable due primarily to self-focusing effects. The (n-1) h order supermode is by contrast much more stable because it does not tend to self-focus. It is therefore possible in principle to design laser arrays that should radiate stably 15 in the (n-1)th order supermode to high output powers. More detailed investigation of examples of such designs has, however, suggested that supermode stability is still sensitive to perturbations of the transverse built-in waveguide. In particular the small gain differences between the various supermodes with the highest gains can lead to solutions which oscillate between two or more supermodes.
An alternative design of injection laser array, hereinafter referred to as a Y-coupled array, is disclosed in 20 United Kingdom patent specification GB 2163001A (inventors M. Taneya et al) in which a first set of n elements are coupled to a set of (n+l) elements by means of a set of (2n- 1) Y couplers. An article entitied'O' phase mode operation in phase-array laser diode with symmetrically branching waveguide', by M. Taneya et al, appearing in Applied Physics Letters Vol. 47 No. 4 pp341-3 (15th August 1975) describes the most basic form of Y-coupled array in which the first set of elements comprises only a single element (n=l), whereas a 25 Y-coupled array with a larger number of elements is described by D.F. Welsh et & in an article entitled in-phase emission from index guided laser array up to 40Omm'appearing in Electronics Letters Vol. 22 No. 6 pp293-4 (13th March 1986). In such arrays the Y couplers serve to discriminate in favour of the zero order supermode because light propagating in phase into the two upper limits of an upright Y is guided out of the coupler via the stem of the Y whereas any out-of-phase component is beyond cut-off, and hence radiates out 30 from the stem.
For any Y-coupled arrayforwhich n_-2 it is to be noted that each of the intermediate elements of the set of (n+l) elements is coupled by Y couplers to two neighbouring elements in the set of n elements, whereas each of the outermost two elements of the array of (n+l) elements is coupled to only one element of the set of n elements and therefore has only half the photon density of the intermediate elements. This will lead to a 35 progressive difference in optical path length between that of the outermost elements and that of the intermediate elements as the drive current is increased. Eventually the phase difference that this engenders can be expected to feed back across the array and lead to a distorted radiated phase front, and even perhaps the generation of a higher order supermode. In principle it could be possible to modify the width and guiding strength of the two outermost elements so as to provide them with increased photon density to match that of 40 the intermediate elements, and so achieve carrier density clamping across the full width of the array above threshold. In practice, however, this would be difficult to achieve because it would involve knowledge of the precise guide strength remaining after taking into account the effects of carriers.
The present invention is concerned with a laser array where the coupling is similarly effected by means of Y-couplers, but in which the splitting of power is arranged in a tree configuration. 45 According to the present invention there is provided a branched tree laser array having a set of 2n Output single mode waveguide laser elements optically coupled, by means of 3- port single mode Y-couplers via one or more sets of intermediate single mode waveguide laser elements, with a single single-mode waveguide element, wherein the lateral separation of the elements within each set is sufficient to provide no significant mutual evanescent coupling between adjacent members of the set, and wherein the outboard end of the 50 single element and that of each member of the set of output elements, are provided respectively with relatively high and relatively low reflectivities whose values are such that, at lasing threshold, the optical gain in each member of the sets of output and intermediate elements is substantially equal to 2.
There follows a description of a tree configuration injection laser array embodying the invention in a preferred form. The description refers to the accompanying drawings in which: 55
Figure 1 is a schematic diagram of a branched tree laser array with 8 output elements, and Figures 2 and3 are diagrams of alternative forms of 7 coupler that may be used in the array of Figure 1.
A branched tree laser array according to the invention has 2 n output elements, where n is a positive integer equal to or greater than 2. For illustrative convenience Figure 1 of the accompanying drawings depicts an array with a set of eight identical output elements 1 (i.e. in this example n=3). These eight output elements are 60 equi-spaced with a lateral spacing 'd'which Is large enough to prevent any significant mutual coupling between adjacent elements via their evanescent fields. The set of eight output elements 1 are coupled by means of four Y couplers 2 to a set of four identical intermediate elements 3, which in turn are coupled by two Y-couplers 4 to a set of two identical intermediate elements 5. In their turn the two intermediate elements 5 are coupled by a Y-coupler 6 to a single element 7. The Y-couplers 2,4 and 6 and the elements 1, 3,5 and 7 are all65 2 GB 2 191631 A 2 single mode optical waveguiding elements at the laser emission wavelength.
The outboard end of the single element 7 is rendered relatively highly reflecting, for instance by means of a high reflectivity interference filter stack 8 at the rear facet of the array, while the outboard ends of the set of eight output elements 1 are rendered relatively low reflectivity, for instance by means of a low reflectivity interference filter stack 9 at the front facet of the array. A feature of branched tree laser arrays according to this 5 invention is that the reflectivities are chosen in relation to the geometry of the array so that, at the lasing threshold, the optical gain in each member of the sets of output and intermediate elements is substantially equal to 2. Generally it will be convenient for the drive to be the same for each of these elements, in which case they need to be of substantially equal optical path length if they are to be of identical cross-section.
Typically, the single element 7 will have a cross-section identical with that of all the other elements, but will 10 not be as long. This element needs to be long enough to provide adequate attenuation of any antiphase component of light fed into it from the two intermediate elements 5. Typically 20 to 30 gm are adequate for this purpose. Additional length provides additional gain for the structure which in turn means that, if the gain in the other element is to be maintained at 2, the reflectivity has to be reduced at at least one of the facets.
Reduction of reflectivity at the rear facet is undesirable because it reduces efficiency. Reduction of reflectivity 15 at the front facet may be difficult to achieve, particularly in the case of trees with a relatively large number of elements because, even with a gain not significantly greater than unity for the single element, the reflectivity required for the front facet is already quite low.
As explained previously, the reflectivity for the rear facet should, for reasons of efficiency, be maintained as high as conveniently possible. Typically this means that an optical power reflectivity of about 0.95 is provided 20 at this facet. Having regard to the fact that at lasing threshold there is unit round trip gain, it can be shown that under these conditions, and under the assumptions that the angle element exhibits unity gain and the other elements a gain of 2, the required reflectivities for the output facet respectively for arrays of 2, 4, 8 and 16 output elements are as listed in the accompanying table. (The array having only two output elements does not fall within the scope of the present invention, and details concerning its properties are provided merely for 25 comparison purposes).
Afeature of arranging fora gain substantially equal to two for all elements otherthan the single element is thatthe optical power levels in any memberof the setof output elements is roughly comparable with that of any member if any of the sets intermediate elements, and thus the array is relatively uniformly stressed. High power lasers are typically susceptible to problems of gain saturation near the ends of an optical cavity where 30 the increase in photon density becomes limited by the finite current density being applied to the device, but in this structure gain saturation is less of a problem than in some other designs because there is a continual dilution of the photon density by the fanning out of the array, and current is injected principally in the region where it is most required, namely in the high intensity and current injected is unevenly distributed down the array with more current injection in relatively high optical intensity regions nearthe output facet than in 35 regions of lower optical intensity situated further away.
In general the electric field strength at the laser facets is an important consideration in determining device reliability, particularly for devices fabricated in GaMAs. If an electric field Ei is incident on a facet with a field reffectivity'r', then the field strength at that facet is Ei(l +r). In the case of a branched tree array with a gain of 2 for all elements otherthan the single element, the rate of the field strength at the two facets is given by the 40 expression Efr.nt/Ere.r=20.5(1 +rfr.nt). Irrearl/(11 +rrear).
Assuming rrear=-(0.95)0.5, Efr,,n,/Er,a,=54.4(1+rfr,,nt). The accompanying table also liststhe calculated ratios 45 for the four arrays. The combination of a rearfacet neartotal reflectorand a front facet anti-ref lector is seen to introduce morethan afactorof 50 higherfield at the front facet. On a much more conservative basis power density incident on a facet might be considered to be the relevant parameter determining reliability. The ratio of the power density at the froritto the rear facet is 2.R,,, or 1.90, for all the arrays of Table 1. Hence on either count the frontfacetwould be expected to suffer damage before the rear. 50 Using the electric field strength atthe front facet as an indication of the degradation hazard, it is possible to calculate the relative power output of each design normalised to that from a single uncoated emitter. The power transmitted through a facet is proportional to 9M -r). However the field at the facet is E1(1 +r), so the power handling capability of a single emitter is proportional to (1 -r 2)1(1 + r 2). Table 1 shows that, from the reliability point of view, the output capability of the tree array increases superlinearly from 4.3 to 54.1 times 55 that of a single uncoated emitter as the number of output elements increases from 2 to 16 respectively. A half wavelength coated single matter might be expected to give twice the output of an uncoated device. Hence these calculated margins of the tree array over a single uncoated emitter would then change to 2.1 to 27.0 over a half wavelength coated emitter for arrays with 2 to 16 output elements respectively. It is to be noted that a higher front facet reflectivity than specified in Table 1 results in a reduction in the ratio of the maximum power 60 incident on the front facet to that on the rear. This arises since the power reflected from the front facet is amplified and concentrated back on the single element at the rear facet. Care therefore needs to be taken in achieving the desired front facet reflectivity.
An important consideration in designing a tree array is the maximum radius of curvature in the connecting guides that can be used without introducing unacceptable bending (radiation) losses. For strong ridge guides 65 3 GB 2 191 631 A 3 it is typicailyfound that a 300 [Lm radius of curvature will prevent significant losses. If care is also taken in reducing scattering due to guide wall roughness, then losses down to 4.9 cm-1 can be obtained on 300 [Lm radius bends. This loss is less than that due to free carrier absorption in a typical laserwaveguide. A tree array will, however, typically employ noticeably weaker guides that will necessitate larger radii of curvature, typically of the order of 1.5mm. 5 Once the radius of curvature of the curved sections of the array has been specified it is possible to estimate the total length of the array. The longest curved section is that between the Y coupler at the end of the first element and the Y couplers at the ends of the next two elements. This curve is formed by equal lengths of positive and negative curvature to give the requisite displacement from the centre line. In the case of an array having 2n output elements on a pitch of V, it can be seen that the combination of the positive curvature 10 component with the negative curvature component, both of radius'a', is required to produce a displacement of 2('-')d. From the intersecting chord therein it follows that the other length 1' of this section is given by (2 n d.a)0.5 15 Succeeding sections do not have to provide as much displacement, and so are made up of shorter areas of the same radius of curvature, and the individual sections are m - ade up to the same total length with straight portions. If the length of the first section 's' is short enough to be neglected, the approximate overall length of the array, ni, is given by 20 n(2 n. d. a)'.' The accompanying table lists approximate lengths for the arrays as calculated for an output element pitch Vof 10 [Lm and a radius of curvatureWof 1.5 mm.
The spacing of the elements within each section is designed to provide no significant mutual evanescent 25 coupling because it is this coupling that is liable to introduce instabilities. However it will be appreciated that there will inevitably be a certain measure of evanescent coupling where the elements approach each other in the Y couplers. If this residual evanescent coupling is still large enough to introduce instability problems, such problems can be overcome by arranging forthese regions to be transparent in the absence of electrical pumping. It will be appreciated that this is effective because the instability results from interaction between 30 the light and the carriers in the region of evanescent coupling rather than from the evanescent coupling itself. By making such regions transparent in the absence of electrical pumping the interaction is removed. One convenient way in which the requisite localised transparency can be achieved is by IID (impurity induced disordering).
The relatively large separation of the output elements at the output facet can be a disadvantage. One way of 35 reducing this effect is to flare the individual elements to greater width as they approach the output facet. This will produce additional evanescent coupling, and so it may be preferred to arrange for part or all of these flares to be accommodated in a region which is transparent in the absence of electrical pumping. In Figure 1 there is depicted in broken outline a modified version of the array in which the array has been lengthened by the addition of a transparent region 10 accommodating the flared regions 11. In this instance the low 40 reflectivity facet is moved from 9 to 9a. An abrupt step to increased width may alternatively be used in place of a flared region without increasing too much additional loss.
The Y-couplers are 3-port devices arranged so that optical power fed into one port is divided equally between the other two ports acting as output ports. Conversely light fed in-phase into the two ports last-mentioned is combined for feeding out of the first-mentioned port. One physical form that such a coupler 45 can take is that of a single single mode waveguide 20 (Figure 2) divides at a small angle into two single mode waveguides 21, 22. An alternative form is provided by a balanced directional coupler configuration in which the first waveguide 30 (Figure 3) terminates in a region where it is symmetrically flanked on both sides by the starts of two other waveguides 31, 32.
The overlapping of the waveguides is such that power launched into the Y coupler via waveguide 30 is fully 50 coupled equally into the other two waveguides so that there is none to be reflected at the end 34 of the first waveguide. Similarly, operating in the reverse direction, in-phase power launched into the two waveguides.31, 32 is completely transferred to the waveguide 30 that extends from between them.
4 GB 2 191631 A 4 TABLE
No. of output elements 2 4 8 16 5 No. of couplers 1 5 7 15 Frontfacet power reflectivity 0.2632 0.0658 0.0164 0.0041 10 Field at front 68.5 61.5 58 56.2 facet/Field at rearfacet Output normalised 4.3 11.1 25.4 54.1 15 to standard uncoated element Approximate total 200 500 1100 2000 length (VLm) 20 Assuming 1.5mm radius of curvature and 10 lim output element spacings.
Claims (5)
1. A branched tree laser array having a set of 2n output single mode waveguide laser elements optically coupled, by means of 3-port single mode Y-couplers via one or more sets of intermediate single mode waveguide laser elements, with a single single-mode waveguide element, wherein the lateral separation of the elements within each set is sufficient to provide no significant mutual evanescent coupling between 30 adjacent members of the set, and wherein the outboard end of the single element and that of each member of the set of output elements, are provided respectively with relatively high and relatively low reflectivities whose values are such that, at lasing threshold, the optical gain in each member of the sets of output and intermediate elements is substantially equal to 2.
2. An array as claimed in claim 1 wherein one or more of the 3-part Y-cou piers are located in regions that 35 are transparent to the laser radiation in the absence of electrical pumping.
3. An array as claimed in claim 1 or 2 wherein the output elements are outwardly flared or stepped towards their outboard ends.
4. An array as claimed in claim 3 wherein at least the outboard ends of the flares or stepped regions on the ends of the output elements are located in regions that are transparent to the laser radiation in the absence of 40 electrical pumping.
5. An array substantially as described with reference to Figure 1 and Figure 2 or Figure 3 of the accompanying drawings.
Printed for Her Majesty's Stationery Office by Croydon Printing Company (UK) Ltd, 10187, D8991685. Published by The Patent Office, 25 Southampton Buildings, London WC2A lAY, from which copies may be obtained.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8613937A GB2191631B (en) | 1986-06-09 | 1986-06-09 | Laser array |
EP87302417A EP0251427B1 (en) | 1986-06-09 | 1987-03-20 | Laser array |
DE8787302417T DE3764410D1 (en) | 1986-06-09 | 1987-03-20 | MULTIPLE ARRANGEMENT OF LASERS. |
US07/032,779 US4760580A (en) | 1986-06-09 | 1987-03-31 | Laser array |
JP62129591A JP2511969B2 (en) | 1986-06-09 | 1987-05-26 | Laser array |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8613937A GB2191631B (en) | 1986-06-09 | 1986-06-09 | Laser array |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8613937D0 GB8613937D0 (en) | 1986-07-16 |
GB2191631A true GB2191631A (en) | 1987-12-16 |
GB2191631B GB2191631B (en) | 1990-01-31 |
Family
ID=10599164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8613937A Expired - Fee Related GB2191631B (en) | 1986-06-09 | 1986-06-09 | Laser array |
Country Status (5)
Country | Link |
---|---|
US (1) | US4760580A (en) |
EP (1) | EP0251427B1 (en) |
JP (1) | JP2511969B2 (en) |
DE (1) | DE3764410D1 (en) |
GB (1) | GB2191631B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2178233B (en) * | 1985-07-12 | 1989-05-10 | Sharp Kk | Semiconductor laser array device |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62235794A (en) * | 1986-04-07 | 1987-10-15 | Sharp Corp | Semiconductor laser array |
FR2625815B1 (en) * | 1988-01-08 | 1990-05-04 | Cit Alcatel | N BY N OPTICAL DIFFUSER |
DE3924060A1 (en) * | 1989-07-21 | 1991-01-24 | Bodenseewerk Perkin Elmer Co | ATOMIC ABSORPTION SPECTRAL PHOTOMETER FOR MULTI-ELEMENT ANALYSIS |
JP3102874B2 (en) * | 1990-11-05 | 2000-10-23 | 日本板硝子株式会社 | Y-branch optical circuit |
JP2966113B2 (en) * | 1990-12-27 | 1999-10-25 | 古河電気工業株式会社 | Waveguide type branch coupler |
US5101413A (en) * | 1991-05-10 | 1992-03-31 | Trw Inc. | Large-aperture light sources using resonant leaky-wave coupling |
FR2676548B1 (en) * | 1991-05-17 | 1993-09-17 | Corning Inc | OPTICAL COUPLER AND MANUFACTURING METHOD THEREOF. |
JP3107246B2 (en) * | 1992-02-12 | 2000-11-06 | 富士ゼロックス株式会社 | Star coupler |
US5305412A (en) * | 1992-12-14 | 1994-04-19 | Xerox Corporation | Semiconductor diode optical switching arrays utilizing low-loss, passive waveguides |
US5287376A (en) * | 1992-12-14 | 1994-02-15 | Xerox Corporation | Independently addressable semiconductor diode lasers with integral lowloss passive waveguides |
US5333219A (en) * | 1992-12-17 | 1994-07-26 | At&T Bell Laboratories | Asymmetric Y-branch optical device |
FR2714490B1 (en) * | 1993-12-29 | 1996-03-01 | Corning Inc | Optical coupler integrated with two inputs and 2N outputs. |
FR2716539B1 (en) * | 1994-02-18 | 1996-04-26 | Corning Inc | Optical coupler integrated into an entry door and 2n exit doors. |
US6733166B2 (en) | 1997-12-09 | 2004-05-11 | Federal -Mogul World Wide, Inc. | Illuminated interior article system utilizing a Y-branch waveguide |
KR100310086B1 (en) * | 1998-11-17 | 2002-11-27 | 삼성전자 주식회사 | Optical coupler and its manufacturing method |
US6580850B1 (en) | 2000-11-24 | 2003-06-17 | Applied Wdm, Inc. | Optical waveguide multimode to single mode transformer |
JP4284892B2 (en) * | 2001-07-13 | 2009-06-24 | オムロン株式会社 | Multi-branch optical waveguide |
US6931179B2 (en) * | 2001-10-29 | 2005-08-16 | Harris Corporation | Lossless optical splitter |
US6954568B2 (en) * | 2003-04-29 | 2005-10-11 | Intel Corporation | Method and apparatus for splitting or combining optical beams with A Y coupler with reduced loss and electrical isolation |
WO2008140718A1 (en) * | 2007-05-09 | 2008-11-20 | The Board Of Trustees Of The University Of Illinois | Curved coupled waveguide array and laser |
WO2011140544A2 (en) * | 2010-05-07 | 2011-11-10 | President And Fellows Of Harvard College | Integrated nanobeam cavity array spectrometer |
US20150104130A1 (en) * | 2013-10-14 | 2015-04-16 | Cisco Technology, Inc. | Optical power splitter |
JP7302430B2 (en) * | 2019-10-24 | 2023-07-04 | 富士通株式会社 | Wavelength tunable light source, optical transmission device using the same, and wavelength tunable light source control method |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4461007A (en) * | 1982-01-08 | 1984-07-17 | Xerox Corporation | Injection lasers with short active regions |
US4578791A (en) * | 1982-12-20 | 1986-03-25 | Trw Inc. | High-power injection laser diode structure |
US4671605A (en) * | 1985-02-06 | 1987-06-09 | The United States Of America As Represented By The Secretary Of The Air Force | Length dependent, optical time delay/filter device for electrical signals |
-
1986
- 1986-06-09 GB GB8613937A patent/GB2191631B/en not_active Expired - Fee Related
-
1987
- 1987-03-20 EP EP87302417A patent/EP0251427B1/en not_active Expired
- 1987-03-20 DE DE8787302417T patent/DE3764410D1/en not_active Expired - Fee Related
- 1987-03-31 US US07/032,779 patent/US4760580A/en not_active Expired - Lifetime
- 1987-05-26 JP JP62129591A patent/JP2511969B2/en not_active Expired - Fee Related
Non-Patent Citations (3)
Title |
---|
APPLIED PHYSICS LETTERS, VOL. 47, NO. 2 15 JULY 1985, PAGES 89 TO 91 * |
APPLIED PHYSICS LETTERS, VOL. 47, NO. 4, 15 AUGUST 1985 PAGES 341 TO 343 * |
ELECTRONICS LETTERS, VOL. 22, NO 6 13 MARCH 1986, PAGES 293 TO 294 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2178233B (en) * | 1985-07-12 | 1989-05-10 | Sharp Kk | Semiconductor laser array device |
Also Published As
Publication number | Publication date |
---|---|
JPS62293684A (en) | 1987-12-21 |
DE3764410D1 (en) | 1990-09-27 |
US4760580A (en) | 1988-07-26 |
EP0251427B1 (en) | 1990-08-22 |
GB2191631B (en) | 1990-01-31 |
JP2511969B2 (en) | 1996-07-03 |
GB8613937D0 (en) | 1986-07-16 |
EP0251427A1 (en) | 1988-01-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20020609 |