GB2103592A - Method of applying an antireflective and/or dielectric coating - Google Patents
Method of applying an antireflective and/or dielectric coating Download PDFInfo
- Publication number
- GB2103592A GB2103592A GB08124199A GB8124199A GB2103592A GB 2103592 A GB2103592 A GB 2103592A GB 08124199 A GB08124199 A GB 08124199A GB 8124199 A GB8124199 A GB 8124199A GB 2103592 A GB2103592 A GB 2103592A
- Authority
- GB
- United Kingdom
- Prior art keywords
- metal
- chloride
- metal halide
- vapor
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003667 anti-reflective effect Effects 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 39
- 238000000576 coating method Methods 0.000 title abstract description 13
- 239000011248 coating agent Substances 0.000 title abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 229910001507 metal halide Inorganic materials 0.000 claims abstract description 11
- 150000005309 metal halides Chemical class 0.000 claims abstract description 11
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract 8
- 239000002184 metal Substances 0.000 claims abstract 8
- 239000006117 anti-reflective coating Substances 0.000 claims description 11
- 150000002736 metal compounds Chemical class 0.000 claims description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 claims description 4
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims description 4
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 4
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 claims description 2
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 claims description 2
- NGCRLFIYVFOUMZ-UHFFFAOYSA-N 2,3-dichloroquinoxaline-6-carbonyl chloride Chemical compound N1=C(Cl)C(Cl)=NC2=CC(C(=O)Cl)=CC=C21 NGCRLFIYVFOUMZ-UHFFFAOYSA-N 0.000 claims 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 claims 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims 2
- YPGZIGPTYUDNTK-UHFFFAOYSA-N 1-pentoxypentane;zirconium Chemical compound [Zr].CCCCCOCCCCC YPGZIGPTYUDNTK-UHFFFAOYSA-N 0.000 claims 1
- XPGAWFIWCWKDDL-UHFFFAOYSA-N propan-1-olate;zirconium(4+) Chemical compound [Zr+4].CCC[O-].CCC[O-].CCC[O-].CCC[O-] XPGAWFIWCWKDDL-UHFFFAOYSA-N 0.000 claims 1
- ZGSOBQAJAUGRBK-UHFFFAOYSA-N propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] ZGSOBQAJAUGRBK-UHFFFAOYSA-N 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 10
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- -1 i.e. Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910001510 metal chloride Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000004704 methoxides Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical class CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
An anti reflective and/or dielectric coating for solar energy cells is produced by directing from different sources (1) a vapor of a metal halide or metal alkoxide alone or in combination with a reducing gas and (2) oxygen to the heated surface of a silicon wafer. The metal is deposited on the silicon as the oxide.
Description
SPECIFICATION
Method of applying an antireflective and/or dielectric coating
The present invention relates to a method of applying an antireflective and/or dielectric coating for solar energy cells, which coatings have as their purpose mitigation of reflection of useful light directed against the illuminated surface of the solar energy cell.
Semiconductor devices may be formed from crystalline silicon in which the silicon, often in the form of a wafer, has been doped with a certain type of impurity causing the silicon wafer to adopt a specific polarity. According to the impurity introduced, the silicon becomes either a p-type or an n-type material. If a dopant such as boron is used, the silicon wafer will be p-type, whereas the use of a dopant such as phosphorus yields n-type. A junction is then formed by diffusing into the wafer an impurity of the conductivity type opposite to that with which the water has previously been doped.
A junction having been established, radiant energy, usually in the form of light impinging on the surface, is rapidly absorbed as it penetrates the semiconductor (silicon) material generating free electrons and holes in pairs. The minority carriers of the hole-electron pairs, in the region of their generation, either recombine with the majority carriers or cross the p-n junction. The minority carriers which cross the p-n junction cause the body to become biased, the electrons being attracted to the n-type region (negative) and the holes into the p-type region (positive). This bias results in a useful electric~ al current which flows when the two regions are connected externally by an electrical conductor.The external connections are usually made to conductors which generally take the form of a metallic grid position on that surface of the cell that is to be exposed to light and a metallic contact the other, back, surface of the water.
An important criterion in obtaining maximum efficiency of a photovoltaic device, i.e., the output measured as a percent of the power input, is that there be maximum absorption of light energy under any given condition of light availability. The effeciency of the solar cell is limited, however, by a known optical phenomena whereby some of the light (both useful and non-useful) striking the top (grid) surface of the solar cell is partially reflected from the solar cell. To reduce the problem of light reflection it is a general practice to employ an anti-reflective coating positioned on the grid surface of the solar cell through which the light enters.
To function properly the antireflective coating must possess, among other things certain optical properties. With respect to one of its optical properties, the antireflective coating should reduce reflection of the useful light. In applications where a "cover" is placed over the antireflective coating to prevent damage to the solar cell, such as a quartz cover slide in space application and a transparent encapsulation for terrestial application, the index of refraction of the antireflective coating should be between that of the cover material and the underlying cell. This reduces the amount of light that is reflected. In connection with another optical property, i.e., its absorption property, the antireflective coating should not absorb the useful light, but should enable the passage of such light to the underlying solar cell.The use of a particular antireflective material is therefore, dependent upon the refledtive index of the underlying solar cell and the cover slide, as well as the absorption band wavelengths of the solar cell.
In the U.S. Patent No. 3,922,774 by Lindmayer, a process for placing an antireflective coating on a silicon wafer was disclosed whereby tantalum metal was evaporated by means of an electron beam and then thermally or anodically oxidizing the tantalum metal, on the silicon wafer, to tantalum pentoxide, i.e., Ta2O5.
In the U.S. Patent No. 3,533,850 by Tarneja et al, a method is disclosed for applying antireflective material, i.e., Ta205, by evaporating the tantalum pentoxide directly onto the light impinging surface of the solar cell. The coating produced by this method however, has an index of refraction that is much lower than the desired value.
Difficulties have also been experienced in the production of antireflective coatings on silicon solar cells utilizing the method described in U.S. Patent
No. 3,922,774. The difficulties involved in this method is in controlling the thickness of the tantalum pentoxide layer which is formed from the deposited elemental tantalum.
In a method disclosed in the specification of U.S.
Patent No.4,156,622 by Lindmayer, an antireflective coating of tantalum pentoxide is produced by the electron beam evaporation of a mixture of elemental tantalum and a tantalum oxide, followed by oxidation of the deposited layer to tantalum pentoxide.
This method has to a limited extend the same disadvantage of difficulty in controlling the thickness of the coating, high energy requirements for deposition and the need for high vacuums during the process.
In the present invention a means was developed for the deposition of an antireflective and/or dielectric coatings on silicon substrates by chemical vapor deposition. This present method eliminates the disadvantages enumerated for the prior art methods of metal deposition. In addition, this invention offers the advantages of being easier to control, and requiring relatively less energy for deposition. An additional advantage offered by this invention is that the process, unlike most other processes which require high vacuums, is normally carried out at atmospheric conditions.
In the process of this invention, a metal halide or alkoxide is heated to its vapor state and as the vapor comes in contract with oxygen in close proximity to or at the surface of a heated silicon substrate, an oxide is formed which is deposited on the silicon substrate. The formed coating requires no further heat treatment to convert the coating to a hard, high index, optical quality and chemically stable coating.
The metal ion for use in this invention is selected from the group consisting of tantalum, niobium, titanium, zirconium, yttrium and hafnium. The halide ion is selected from the group consisting of chloride, bromide or iodide and the alkoxide has preferably 1 to 6 carbon atoms, such as methoxides, ethoxides, propoxides, isoproproxides, pentoxides and hexoxides.
In the preferred process of this invention, a metal chloride, selected from the group consisting of tantalum chloride, niobium chloride, titanium tetrachloride, zirconium chloride, yttrium chloride and hafnium chloride is heated to its vapor phase. The phase is then transported, by itself or mixed with a reducing gas, through conventional apparatuses, to a dispensing nozzle which is directed to the lightimpinging surface of a heated silicon substrate. At the same time that the metal chloride vapor comes in contact with the silicon substrate, the substrate is also contacted with a stream of oxygen. This procedure oxidizes the metal chloride to the oxide and deposits the oxide on the silicon substrate.
The metal compound vapours may be combined with a slightly reducing gaseous medium such as forming gas, methanol and nitrogen. The use of a slightly reducing gaseous medium in conjunction with the metal compound vapor, is to assist in transporting the vapor to the reaction area and also to control the character of the gaseous medium in the reaction area. A reducing atmosphere is also useful in preventing premature oxidation of the vapor, that is, other than on the surface of the silicon wafer.
The stiochiometry of the oxide layer deposited on the silicon substrate is controlled by the composition of the atmosphere in the reaction area, i.e., the concentration of metal compound, oxygen and reducing medium and the reaction temperature.
The temperature of the reaction area, i.e., the temperature to which the silicon substrate is heated is above approximately 325 C and preferably in the approximate range of 325C to 450 C.
Ideally the metal oxide deposited on the silicon substrate will approach its highest stable oxidative state, which is the pentoxide for tantalum and niobium; MO2 for titanium, hafnium and zirconium; and Y203 for yttrium. The higher the temperature of the reaction area and the higher the ratio of oxygen to metal compound, the closer the product will be to its stiochiometric composition.
The thickness of the coating can be determined by the various known instruments which are available for that purpose. The thickness of the coating may vary but is preferrable approximately one-quarter wavelength of light energy having a wavelength in the range of about 0.5 to 0.75 micron. For tantalum pentoxide, this thickness is in the range of about 550An to about 650A . The thickness for the other metal oxides are also in this general range but may vary slightly from either end of the range.
Although the invention has been shown in connection with certain embodiments, it will be readily apparent to those skilled in the art that various changes may be made to suit requirements without departing from the spirit and scope of the invention.
Claims (21)
1. A method of applying an antireflective coating to a surface of a solar energy cell, said surface being adapted to absorb light impinging thereon, comprising (1) heating said surface to a temperature above approximately 325 C, and (2) directing from separate sources (a) a vapor of a metal compound, selected from the group consisting of a metal halide or metal alkoxide, alone or in combination with a reducing gas and (b) oxygen, to said surface so that an antireflective layer of the respective oxide is deposited on said silicon surface.
2. A method as claimed in Claim 1 in which said metal compound is a metal halide.
3. A method as claimed in Claim 2 in which said metal halide is selected from the group consisting of tantalum chloride, niobium chloride, titanium tetrachloride, zirconium chloride, yttrium chloride and hafnium chloride.
4. A method as claimed in Claim 3 in which said anti reflective layer is in a thickness of the approximate range of 550An to 650An.
5. A method as claimed in Claim 4 in which said metal halide vapor is tantalum chloride.
6. A method as claimed in Claim 4 in which said metal halide vapor is niobium chloride.
7. A method as claimed in Claim 4 in which said metal vapor is titanium tetrachloride.
8. A method as claimed in Claim 2 in which the silicon wafer is heated to a temperature in the range of approximately 325 C to 450 C.
9. A method as claimed in Claim 1 in which the metal compound vapour is mixed with a reducing gas selected from the group consisting of forming gas, methanol and nitrogen.
10. A method as claimed in Claim 9 in which said metal compound is a metal halide.
11. A method as claimed in Claim 10 in which said metal halide vapor is tantalum chloride.
12. a method as claimed in Claim 10 in which said metal halide vapor is titanium tetrachloride.
13. A method as claimed in Claim 10 in which said metal halide vapor is niobium chloride.
14. A method as claimed in Claim 9 in which the silicon wafer is heated to a temperature in the range of approximately 325 C to 450"C.
15. A method as claimed in Claim 1 in which said metal compound is a metal alkoxide.
16. A method as claimed in Claim 15 in which said metal alkoxide is selected from the group consisting of tantalum ethoxide, titanium ethoxide, titanium isopropoxide, zirconium isopropoxide, zirconium n-propoxide and zirconium n-pentyloxide.
17. A method as claimed in Claim 16 in which said anti-reflective layer is in a thickness of the approximate range of 550An to 650An.
18. A method as claimed in Claim 17 in which said metal alkoxide is titanium ethoxide.
19. A method as claimed in Claim 17 in which said metal alkoxide is tantalum ethoxide.
20. A method as claimed in Claim 15 in which the silicon wafer is heated to a temperature in the range of approximately 325 C to 450 C.
21. A method of applying an antireflective coat ing to a surface of a solar energy cell substantially as described herein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08124199A GB2103592B (en) | 1981-08-07 | 1981-08-07 | Method of applying an antireflective and/or dielectric coating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08124199A GB2103592B (en) | 1981-08-07 | 1981-08-07 | Method of applying an antireflective and/or dielectric coating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2103592A true GB2103592A (en) | 1983-02-23 |
| GB2103592B GB2103592B (en) | 1985-05-01 |
Family
ID=10523780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08124199A Expired GB2103592B (en) | 1981-08-07 | 1981-08-07 | Method of applying an antireflective and/or dielectric coating |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2103592B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3905719C1 (en) * | 1989-02-24 | 1990-08-09 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Method for fabricating a solar cell |
| GB2294273A (en) * | 1994-10-22 | 1996-04-24 | Epichem Ltd | Depositing tin oxide from a tetraalkoxy compound |
| US5830530A (en) * | 1994-10-22 | 1998-11-03 | Epichem Limited | Chemical vapor deposition of tin oxide films |
-
1981
- 1981-08-07 GB GB08124199A patent/GB2103592B/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3905719C1 (en) * | 1989-02-24 | 1990-08-09 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De | Method for fabricating a solar cell |
| GB2294273A (en) * | 1994-10-22 | 1996-04-24 | Epichem Ltd | Depositing tin oxide from a tetraalkoxy compound |
| US5830530A (en) * | 1994-10-22 | 1998-11-03 | Epichem Limited | Chemical vapor deposition of tin oxide films |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2103592B (en) | 1985-05-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19930807 |