GB2087144A - Temperature compensation in strain gauge transducers - Google Patents
Temperature compensation in strain gauge transducers Download PDFInfo
- Publication number
- GB2087144A GB2087144A GB8035923A GB8035923A GB2087144A GB 2087144 A GB2087144 A GB 2087144A GB 8035923 A GB8035923 A GB 8035923A GB 8035923 A GB8035923 A GB 8035923A GB 2087144 A GB2087144 A GB 2087144A
- Authority
- GB
- United Kingdom
- Prior art keywords
- thin film
- resistance
- strain gage
- temperature compensation
- bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000000615 nonconductor Substances 0.000 claims 8
- 238000009877 rendering Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 230000002277 temperature effect Effects 0.000 description 6
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012858 resilient material Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
- G01B7/20—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance formed by printed-circuit technique
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2268—Arrangements for correcting or for compensating unwanted effects
- G01L1/2281—Arrangements for correcting or for compensating unwanted effects for temperature variations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Force In General (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
A thin film strain gauge transducer including a flexure element 16 on which strain gauges R1-R4 are mounted has temperature compensation resistances Rs, Rz on an unstrained portion 12 of the flexure element of the transducer. The compensation resistances are formed of the same material as the electrical leads interconnecting the strain gauges and are deposited simultaneously with the electrical leads during manufacture. The temperature compensation resistances have a temperature coefficient of resistance of opposite algebraic sign to that of the strain gauges. <IMAGE>
Description
SPECIFICATION
Improved thin film strain gage apparatus
Background of the invention
Force transducers embodying thin film strain gage resistance bridges have been in use for many years.
Typically, the gages are provided on a flexure element which deforms in response to an applied force. In such cases, temperature effects may cause unequal expansion of the legs of the bridge even when no actual force is being applied. This causes a shift in the zero point of the bridge since an output will be produced even when no force is applied.
Similarly, temperature effects may result in differential changes in the elasticity or spring constant of various parts of the transducer, so that a given deflection of the flexure element will cause different bridge outputs as the temperature varies. This causes a shift in the span of the bridge, also known as the gage factor or sensitivity.
Various approaches to compensation for temperature effects have been followed in the past. Bodner eft at disclosed in U.S. Patent 2,930,224 a type of temperature compensating strain gage in which a strain-insensitive thermocouple is used to generate a current flow opposite to that flowing in the gage resistance in order to cancel out temperature effects.
The temperature compensating elements, however, are located on the strained portion of the flexure element and therefore in fact are subject to resistance variations due to applied strain. Starr also disclosed in U.S. Patent 3,034,346 a technique for compensation of strain gage nonlinearity in which the compensating resistances are placed on the strained portion of the flexure element. Billette et al show in U.S. Patent No. 3,886,799 a type of semiconductor pressure transducer in which compensating elements are provided on the flexure element with the strain gage bridge.
While these prior art devices have achieved a measure of success in compensating for temperature effects, the location of the compensating elements on the strained portion of the flexure element causes resistance variations due to strain which tend to interfere with the desired function of the compensating elements: the minimization of temperature effects. Moreover, due to the complicated procedures by which prior art thin film strain gage transducers have been made, manufacturing time has been rather long and cost high.
Objects of the invention
An object of the invention is to provide an improved thin film strain gage transducer having provision for temperature compensation.
Another object of the invention is to provide such a transducer in which the compensating elements are not subject to applied strain which would influence their performance.
Still another object of the invention is to provide such a transducer in which the structure of the strain gages and compensating elements is quite simple, thereby facilitating quick and less expensive manufacture.
These objects are given only by way of example; thus, other desirable objectives and advantages inherently achieved by the disclosed invention may occur to those skilled in the art. Nonetheless, the scope of protection is to be limited only by the appended claims.
Summary of the invention
The above objects and other advantages are achieved wilh the invention which comprises, in one embodiment, a flexure element having at least one thin film strain gage resistance element deposited thereon in a position to be strained upon deformation of the flexure element. Leads of a material having a temperature coefficient of resistance opposite to that of the strain gage resistances are attached to the gages. Temperature compensation resistors are formed in the leads and deposited at a location on the flexure element which is unstrained during operation. A bridge of the strain gages is usually used. Due to the simplified process used to make the transducer, the leads are superposed on an underlying thin layer of the same material as the strain gage resistances.
As used in this application, the term "thin film" refers to elements of minute thickness which are deposited using sputtering or vacuum deposition techniques. The thickness of such films is typically measured in Angstrom units or microns so that several layers of such "thin films" may have a thickness of only 4 to 30 microns and an individual layer may have a thickness of about 200 Angstrom units to 1 micron. Such thin film elements are used in integrated circuits and are readily distinguishable from discrete elements or, as in the case of strain gages, from bonded gages or wire gages.
Brief description of the drawing
Figure 1 shows a greatly enlarged, perspective view of a flexure element having deposited thereon a temperature compensated strain gage bridge according to the present invention.
Figure 2 shows a schematic diagram of the bridge illustrated in Figure 1.
Figure 3 shows a greatly enlarged cross-section taken along line 3-3 in Figure 1, indicating portions of the individual thin films deposited to form the bridge strain gage resistances and electrical leads.
Detailed description ofa preferred embodiment
The following is a detailed description of the invention, reference being made to the drawing in which like reference numerals identify like elements of the structure in each of the several Figures.
Referring to Figures 1 to 3, a force transducer embodying the invention is seen to comprise a flexure beam or element 10 having an immovable portion 12 and a movable portion 14 joined by a flexible portion 16. Flexure element 10 typically is made from a resilient material such as steel in a rectangular parallelepiped configuration, as illustrated; however, any suitably resilient material may be used. Flexible portion 16 is formed by drilling or otherwise forming two holes 18,20 laterally through element 10, joining the holes with a slot 22, and opening hole 20 to the bottom of element 10 with a slot 24.Thus, when immovable portion 12 is fixed and a force is applied to movable portion 14 as indicated by the arrow in Figure 1, the upper surface 26 of flexible portion 16 deforms into a curved configuration so that the thin section 28 above hole 18 is placed in tension; and the thin section 30 above hole 20 is placed in compression.
Four thin film strain gage resistance elements R1,
R2, R3 and R4 are deposited on upper surface 26 in a manner to be described below, so that R1 and R3 are above thin section 28 and R2 and R4 are above thin section 30. Figure 2 indicates schematically which strain gage resistance elements are in tension (T) and compression (C), and also shows their interconnections into a Wheatstone bridge pattern. Resistance elements R1 and R4 are connected at node 32 by thin film metal leads 34,36. A long thin film lead 38 runs from node 32 off movable portion 14, onto immovable portion 12 and to a serpentine thin film temperature compensation resistance element Rs1 which is of the same metal as lead 38. The other end of resistance element Rsi joins a connector pad 40.A thin film lead 42 runs from resistance element R4 off movable portion 14, onto immovable portion 12 and to a serpentine thin film temperature compensation resistance element Rzi which also is of the same metal as lead 42. The other end of resistance element Rzi joins a second of connector pads 44.
Resistance elements R1 and R2 are connected at node 46 by thin film metal leads 48,50. A long thin film lead 52 runs from node 46 to a connector pad 54 deposited on immovable portion 12. Athin film lead 56 runs from resistance element R2 to node 58 which is connected to resistance element R3 by thin film lead 60. A long thin film lead 62 runs from node 58 to a further serpentine thin film temperature compensation resistance element R32 deposited on immovable portion 12. The other end of resistance element
Rs2 joins a connector pad 64. Finally, a long thin film lead 66 runs from resistance element R3 to a further serpentine thin film temperature compensation resistance element Rz2 deposited on immovable portion 12 and formed of the same metal as lead 66.
Resistance element R22 terminates at a second of connector pads 68.
In Figure 3, a schematic sectional view is shown, taken along line 3-3 of Figure 1, next to resistance element R1. Resistance elements R1 to R4 and elements 32 to 68 preferably are deposited on flexure element 12 using a unique four layer structure and conventional photo lithographic techniques to define resistor and lead geometries. Following suitable cleaning of flexure element 12, an electrically insulative layer 70, a resistive layer 72 and a conductive layer 74 are deposited seriatim on surface 26, so that the entire surface 26 is covered by three congruent layers. Then, using a suitable photomask, layer 74 is etched away to leave behind only those portions of layer 74 required for the lead pattern and temperature compensation resistance geometries discussed above.After that, using another suitable photomask, layer 72 is etched away to leave behind only resistance elements R1, R2, R3 and R4 joined to their respective leads. As shown in
Figure 3, each lead and teemperature compensation resistance element actually is made up of two superposed thin films of congruent geometry, an upper metal film remaining from layer 74 and beneath it a lower resistive film remaining from layer 72. A passivation layer 76 preferably is applied over the entire gage assembly, following which through holes or vias (not shown), are etched through to connector pads 40,44 (2), 54, 64 and 68 (2).The process of depositing the strain gage bridge is discussed in more detail in applicant's British Patent
Application No. 8035793 filed concurrently herewith on 7th November 1980 with priority from US Serial No. 093834 filed 13th November 1979. Those skilled in the art will appreciate, however, that other processes of manufacture may also be used without departing from the scope of the present invention.
Insulative layer 70 may be formed of TA205; resistive layer 72, of conventional cermet material; and conductive layer 74, of gold. Other suitable materials may also be used such as alumina or
Fosterite for insulative layer 70; Nichrome (Registered Trade Mark), MOSI or CRSI, for resistive layer 72; and nickel, for conductive layer 74. The temperature coefficient of resistance of the strain gage resistive material 72 is chosen to be of opposite polarity to that of the lead material 74.
In operation, as movable portion 14 is deflected upwardly due to applied force, the resistances of elements R1 to R4 will change due to the applied strain. Bridge power is applied across connector pads 40,64 and the bridge output is taken across connector pads 54 and 44-68, in the well-known manner. Should the temperature of the various resistances change from the level at which the transducer was calibrated, the resistance of elements R1 or R4 will change in one direction; and that of elements Rsi and Rs2 and the elements of Rzi and/or Rz2 (left in the circuit) will change in the opposite direction. The determining factor of whether Rzi and Rz2 are left in the circuit or shorted out of the circuit during calibration depends on the zero setting calibration requirements.The changes in resistance Rsi and Rs2 tend to maintain a relatively constant span or gage factor; whereas, the changes in Rzi and/or R22 tend to maintain a relatively constant zero setting when no load is applied, even as temperature varies.
Resistances Rsi and Rsi are shown in the input circuit to the bridge; however, placing them in the output circuit is also within the scope of the invention. Similarly, resistances R21 and R22 are shown in series with the strain gage resistances in the legs of the bridge; but they could also be placed in parallel with the strain gage resistances and still be within the scope of the invention. Also, while serpentine geometries are shown for the temperature compensation resistances, this geometry is not critical, other arrangements being encompassed by the invention.
For example, variation of the thickness of the gold layer to affect the compensation resistances is an alternate approach.
Claims (9)
1. An improved thin film gage transducer comç prising:
a flexure element deformable in response to an applied force;
at least one thin film strain gage resistance element deposited on said flexure element in a position to be strained upon deformation of said flexure element, said strain gage resistance element being made from a first material having a first temperature coefficient of resistance;
at least two electrically conductive thin film leads deposited on said flexure element and connected to said at least one thin film strain gage resistance element for the purpose of conducting current to and from said resistance element, said thin film leads being made from a second material having a second temperature coefficient of resistance opposite in algebraic sign to that of said first material; and
at least one thin film temperature compensation resistance element deposited on said flexure element, connected in circuit with said leads and located in a position on said flexure element not subject to strain upon deformation of said flexure element, said temperature compensation element also being made from said second material, whereby changes in resistance of said strain gage resistance element due to temperature variations are offset by opposite changes in resistance of said temperature compensation resistance element thus rendering the transducer less sensitive to variations in ambient temperature.
2. A transducer according to Claim 1, wherein there are at least four of said strain gage resistance elements connected in a Wheatstone bridge configuration; and said at least one thin film temperature compensation resistance is connected in the input power circuit of said bridge to provide temperature compensation of the span or gage factor of said bridge.
3. A transducer according to Claim 1, wherein there are at least four of said strain gage resistance elements connected in a Wheatstone bridge configuration; and said at least one thin film temperature compensation resistance is connected in at least one leg of said bridge to provide temperature compensation of the zero setting of said bridge.
4. A transducer according to Claim 1, further comprising a thin film of electrical insulator material deposited on said flexure element beneath said at least one thin film strain gage resistance element, and a thin film of said first material deposited on said electrical insulator material beneath said thin film leads.
5. A transducer according to Claim 2, wherein another thin film temperature compensation resistance is connected in at least one leg of said bridge to provide temperature compensation of the zero setting of said bridge.
6. A transducer according to Claim 2, further comprising a thin film of electrical insulator material deposited on said flexure element beneath said at least one thin film strain gage resistance element, and a thin film of said first material deposited on said
electrical insulator material beneath said thin film
leads.
7. A transducer according to Claim 3, further comprising a thin film of electrical insulator material deposited on said flexure element beneath said at least one thin film strain gage resistance element, and a thin film of said first material deposited on said electrical insulator material beneath said thin film leads.
8. Atrnrsducer according to Claim 5, further comprising a thin film of electrical insulator material deposited on said flexure element beneath said at least one thin film strain gage resistance element, and a thin film of said first material deposited on said electrical insulator material beneath said thin film leads.
9. The improved thin film strain gage transducer substantially shown and described in the foregoing specification and accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8035923A GB2087144B (en) | 1980-11-07 | 1980-11-07 | Temperature compensation in strain gage transducers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8035923A GB2087144B (en) | 1980-11-07 | 1980-11-07 | Temperature compensation in strain gage transducers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2087144A true GB2087144A (en) | 1982-05-19 |
| GB2087144B GB2087144B (en) | 1984-04-26 |
Family
ID=10517174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8035923A Expired GB2087144B (en) | 1980-11-07 | 1980-11-07 | Temperature compensation in strain gage transducers |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2087144B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0082698A2 (en) * | 1981-12-23 | 1983-06-29 | Kabushiki Kaisha Ishida Koki Seisakusho | Temperature compensation circuit for strain gauges |
| GB2142776A (en) * | 1983-06-13 | 1985-01-23 | Tokyo Electric Co Ltd | Strain sensor |
| WO2012010301A1 (en) * | 2010-07-23 | 2012-01-26 | Sartorius Weighing Technology Gmbh | Strain gauge |
| DE102016104306A1 (en) * | 2016-03-09 | 2017-09-14 | Infineon Technologies Ag | EXPANSION SENSOR BZW. REDUCTION OF A DRIFT OF A BRIDGE SWITCHING THROUGH A STRETCHING |
| US11287347B2 (en) * | 2019-07-31 | 2022-03-29 | Abb Schweiz Ag | Temperature-compensated strain gauge measurements |
-
1980
- 1980-11-07 GB GB8035923A patent/GB2087144B/en not_active Expired
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0082698A2 (en) * | 1981-12-23 | 1983-06-29 | Kabushiki Kaisha Ishida Koki Seisakusho | Temperature compensation circuit for strain gauges |
| EP0082698A3 (en) * | 1981-12-23 | 1984-08-22 | Kabushiki Kaisha Ishida Koki Seisakusho | Temperature compensation circuit for strain gauges |
| GB2142776A (en) * | 1983-06-13 | 1985-01-23 | Tokyo Electric Co Ltd | Strain sensor |
| WO2012010301A1 (en) * | 2010-07-23 | 2012-01-26 | Sartorius Weighing Technology Gmbh | Strain gauge |
| DE102016104306A1 (en) * | 2016-03-09 | 2017-09-14 | Infineon Technologies Ag | EXPANSION SENSOR BZW. REDUCTION OF A DRIFT OF A BRIDGE SWITCHING THROUGH A STRETCHING |
| DE102016104306B4 (en) * | 2016-03-09 | 2020-04-09 | Infineon Technologies Ag | EXPANSION SENSOR OR REDUCING EXTENSION DRIFT OF A BRIDGE CIRCUIT |
| US11287347B2 (en) * | 2019-07-31 | 2022-03-29 | Abb Schweiz Ag | Temperature-compensated strain gauge measurements |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2087144B (en) | 1984-04-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PCNP | Patent ceased through non-payment of renewal fee |