GB2083699B - Phototransistor having an emitter-base heterojunction - Google Patents

Phototransistor having an emitter-base heterojunction

Info

Publication number
GB2083699B
GB2083699B GB8125935A GB8125935A GB2083699B GB 2083699 B GB2083699 B GB 2083699B GB 8125935 A GB8125935 A GB 8125935A GB 8125935 A GB8125935 A GB 8125935A GB 2083699 B GB2083699 B GB 2083699B
Authority
GB
United Kingdom
Prior art keywords
phototransistor
emitter
base heterojunction
heterojunction
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8125935A
Other versions
GB2083699A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB2083699A publication Critical patent/GB2083699A/en
Application granted granted Critical
Publication of GB2083699B publication Critical patent/GB2083699B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
GB8125935A 1980-09-11 1981-08-25 Phototransistor having an emitter-base heterojunction Expired GB2083699B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8019621A FR2490014A1 (en) 1980-09-11 1980-09-11 EMITTER-BASE HETEROJUNCTION PHOTOTRANSISTOR WITH TRANSMITTER LAYER LOCALLY OF REVERSE TYPE

Publications (2)

Publication Number Publication Date
GB2083699A GB2083699A (en) 1982-03-24
GB2083699B true GB2083699B (en) 1984-05-10

Family

ID=9245843

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8125935A Expired GB2083699B (en) 1980-09-11 1981-08-25 Phototransistor having an emitter-base heterojunction

Country Status (5)

Country Link
US (1) US4620210A (en)
JP (1) JPS5779677A (en)
DE (1) DE3135945A1 (en)
FR (1) FR2490014A1 (en)
GB (1) GB2083699B (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3436927A1 (en) * 1984-10-09 1986-04-10 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Bipolar phototransistor
US4987468A (en) * 1988-06-17 1991-01-22 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US5164797A (en) * 1988-06-17 1992-11-17 Xerox Corporation Lateral heterojunction bipolar transistor (LHBT) and suitability thereof as a hetero transverse junction (HTJ) laser
US5140400A (en) * 1989-03-29 1992-08-18 Canon Kabushiki Kaisha Semiconductor device and photoelectric converting apparatus using the same
US5245204A (en) * 1989-03-29 1993-09-14 Canon Kabushiki Kaisha Semiconductor device for use in an improved image pickup apparatus
US6629646B1 (en) * 1991-04-24 2003-10-07 Aerogen, Inc. Droplet ejector with oscillating tapered aperture
US5343054A (en) * 1992-09-14 1994-08-30 Kabushiki Kaisha Toshiba Semiconductor light-detection device with recombination rates
JP2773730B2 (en) * 1996-03-07 1998-07-09 日本電気株式会社 Photoconductive infrared detector
US6703647B1 (en) * 2002-04-22 2004-03-09 The United States Of America As Represented By The Secretary Of The Navy Triple base bipolar phototransistor
US10453984B2 (en) 2017-03-23 2019-10-22 Wavefront Holdings, Llc Conductive isolation between phototransistors

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3881113A (en) * 1973-12-26 1975-04-29 Ibm Integrated optically coupled light emitter and sensor
FR2352404A1 (en) * 1976-05-20 1977-12-16 Comp Generale Electricite HETEROJUNCTION TRANSISTOR
JPS5373990A (en) 1976-12-14 1978-06-30 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
FR2490014A1 (en) 1982-03-12
FR2490014B1 (en) 1984-01-06
JPS5779677A (en) 1982-05-18
DE3135945A1 (en) 1982-04-22
US4620210A (en) 1986-10-28
GB2083699A (en) 1982-03-24
JPH0451988B2 (en) 1992-08-20
DE3135945C2 (en) 1991-03-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940825