GB2081226A - Magazine for electrical components - Google Patents

Magazine for electrical components Download PDF

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Publication number
GB2081226A
GB2081226A GB8122467A GB8122467A GB2081226A GB 2081226 A GB2081226 A GB 2081226A GB 8122467 A GB8122467 A GB 8122467A GB 8122467 A GB8122467 A GB 8122467A GB 2081226 A GB2081226 A GB 2081226A
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GB
United Kingdom
Prior art keywords
magazine
high molecular
molecular compound
portions
electrical components
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8122467A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB2081226A publication Critical patent/GB2081226A/en
Withdrawn legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/0084Containers and magazines for components, e.g. tube-like magazines
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Packaging Frangible Articles (AREA)

Abstract

Herein disclosed is a tubular magazine 10 for electrical components 2, which is made of a high molecular compound and which is constructed of a transparent top portion 11 so that the components can be identified and conductive terminal housing portions 13 to prevent electrostatic breakdown. The terminal housing portions 13 can be made conductive by incorporation of a conductive material into the high molecular compound of which they are made.

Description

SPECIFICATION Magazine for electrical components The present invention relates to a magazine for electrical components, and more particularly to a magazine for semiconductor devices.
A semiconductor device such as an MOSIC or a bipolar IC may electrically permanently break down due to static electricity.
In order to prevent the semiconductor device from permanently breaking down, it is known in the art to electrically short-circuit the external terminals of the semiconductor device, and a magazine for housing the semiconductor device has adopted a construction, in which the external terminals of the semiconductor device are shortcircuited. One example is a magazine 1 which is shown in Fig. 1. This magazine 1 is disclosed in Japanese Patent Publication No. 54-1 7626.
This magazine is fabricated of a metal material such as aluminum by an extrusion-molding process or the like, and is constructed of a supporting portion 5 for supporting the body 3 of a semiconductor device 2, terminal housing portions 6 for housing the external terminals 4 of the semiconductor device 2, and a top wall portion 7 for preventing the semiconductor device 2 from coming out, undesirably.
A plurality of semiconductor devices 2 are carried in the magazine 1 while having their external terminals 4 short-circuited because they contact with the magazine 1. Thus, the semiconductor devices 2 are prevented from electrostatically breaking down. Moreover, the names of the semiconductor devices 2, which are written in the bodies 3 thereof, can be recognized from the outside through an aperture 8 which is formed in the aforementioned top wall 7.
However, the use of such metal as the material of the magazine raises problems that the weight is increased to raise the cost of the magazines per se and the cost for transportation.
On the other hand, magazines of a synthetic resin, which are lighter and more inexpensive than the aforementioned magazines and to which electrostatic breakdown preventing means is applied, are disclosed in either the foregoing publication of Japanese Utility Model Publication No. 51-24192. The magazine disclosed in the former Publication is made to have its top wall portion formed with the aperture similarly to the magazine 1 shown in Fig. 1 thereby to raise a problem that its mechanical strength is low.On the contrary, the magazine disclosed in the latter Publication is made, as shown in Fig. 2, to have its whole inner surface formed with a conductive cover film 9 by a coating or plating process which is adopted as means for preventing the electrostatic breakdown, thus making it difficult to recognize the name or number of the semiconductor devices which are accommodated in the magazine. Moreover, the conductive cover film 9 has a surface resistance as high as 10'2 52/cam2 so that it cannot sufficiently protect the semiconductor devices against the charge voltage which may become as high as 1000 V.
In one aspect, the present invention provides a tubular magazine for electrical components, comprising a top wall portion made of a transparent high molecular compound, and a terminal housing portion comprising a conductive material.
In a second aspect, the present invention provides a method of fabricating a magazine for accommodating electrical components, comprising the steps of: extruding a first material of a transparent high molecular compound through a first die to form a first portion of the magazine; extruding a second material of a high molecular compound containing a conductive material through a second die to form a second portion of the magazine; and joining the first and second portions of the magazine so as to result in the magazine having a tubular shape.
In the drawings: Fig. 1 is a sectional view showing a conventional magazine and a semiconductor device placed in the magazine; Fig. 2 is a sectional view showing another conventional magazine and a semiconductor device placed in the magazine; Fig. 3 is a perspective view showing a magazine according to the present invention; Fig. 4 is a perspective view showing semiconductor devices placed in the magazine; Fig. 5 is a perspective view for explaining the method of fabricating the magazine; Fig. 6 is a sectional view showing a magazine according to another embodiment of the present invention, and a semiconductor device placed in the magazine; Fig. 7 is a perspective view showing the semiconductor device to be placed in the magazine shown in Fig. 6; Fig. 8 is a perspective view showing another semiconductor device to be placed in the magazine shown in Fig. 6;; Fig. 9 is a perspective view showing a magazine according to a further embodiment of the present invention; Fig. 10 is a perspective view showing a semiconductor device to be placed in the magazine shown in Fig. 9; Fig. 11 is a sectional view showing a magazine according to a further embodiment of the present invention, and a semiconductor device placed in the magazine; Fig. 12 is a perspective view showing a further embodiment of the present invention; Fig. 13 is a sectional view showing a magazine according to a further embodiment of the present invention, and a semiconductor device placed in the magazine; and Fig. 14 is a perspective view for explaining the method of fabricating the magazine shown in Fig. 13.
Fig. 3 shows a magazine 10 according to the present invention and caps C1 and C2 which are fitted in each end of the magazine 10. This magazine 10 is constructed of a transparent top wall portion 11, and a supporting portion 12 and terminal housing portions 13, both of which contain metal. More specifically, the magazine 10 is constructed to have its top wall portion 11 molded of a transparent high molecular compound and its supporting portion 12 and terminal housing portions 13 molded of a high molecular compound containing metal such that both of the portions made of different materials are integrated. As a result, the top wall portion 1 1 is made transparent so that the inside of the magazine can be seen therethrough from the outside.On the other hand, the aforementioned supporting portion 12 and terminal housing portions 13 are made to have their surface resistances close to that of the metal so that these portions have a high electrostatic breakdown preventing effect.
Fig. 4 shows a semiconductor device 2 placed in the magazine 10 shown in Fig. 3. The semiconductor device 2 is constructed of either a MOSIC pellet or a bipolar IC pellet which is formed with a plurality of elements such as transistors, a sealing body of resin for hermetically sealing that pellet, and a plurality of external terminals extending from that sealing body to the outside and electrically connected with the transistors.
Moreover. the body (i.e., the sealing resin body) 3 of that semiconductor device 2 has its upper surface printed with the name of the maker, the name of the product and so on. The semiconductor device 2 shown in Fig. 4 is generally called a "Dual-In line type semiconductor device".
When the semiconductor device 2 is placed in the magazine 10, the product name, which is printed on the upper surface of the body 3 placed on the supporting portion 12, can be recognized as it is through the transparent top wall portion 11. Moreover, the plural external terminals 4 (i.e., the metal leads), which are placed in the terminal housing portions 13, are either in contact with or in the vicinity of the inner sides of the terminal housing portions 13 having a low surface resistance so that an excellent electrostatic breakdown preventing effect can be attained. In other words, the external terminals 4 are shortcircuited with one another through those contacts.
At the same time, since the magazine 10 is made of a high molecular compound as a whole, it can be made lighter and more inexpensive than one made of metal. Moreover, since the semiconductor device can be recognised without forming the top wall portion 11 with the aperture shown in Fig. 1, the magazine can have a sufficient strength for a packaging magazine.
Polyvinyl chloride or a styrene resin such as polystyrene is adopted as the high molecular material making the aforementioned magazine 10.
The former material is excellent in strength and the latter material is excellent in weight and cost.
The top wall portion 11 is prepared by making the above-specified material transparent. The supporting portion 12 and the terminal housing portions 13 are prepared by containing a conductive material such as carbon or metal in the same material.
The method of fabricating the magazine according to the present invention will now be described with reference to Fig. 5. A material 14 of the above-specified transparent high molecular compound and a material 1 5 of the high molecular compound containing metal or the like are extruded in the direction of the arrows through independent dies 16 and 17 into members 18 and 19 corresponding to the top wall portion and the supporting and terminal accommodating portions.
After that (or immediately after that), both the members 18 and 19 are made to pass through a jointing furnace 30 so that their side edges may be melted and jointed into an integrated structure. As a result, the aforementioned magazine 10 can be fabricated. It is nqt necessary with this method to coat a metallic mqterial on the inner surface of the magazine.
Fig. 6 shows another embodiment of the present invention, namely, a magazine 1 OA which has such a relatively simple rectangular crosssection as is suitable for a Single-In line type semiconductor device. In other words, the magazine 1 OA is suitable for housing a semiconductor device 2A, which is equipped with a plurality of external terminals 4A extending in one direction from a sealing resin body 3A, such as a single transistor device shown in Fig. 7 or an IC device shown in Fig. 8.
In Fig. 6, the magazine 1 OA is constructed of an upper wall portion 1 A having its upper half made transparent, and a terminal accommodating portion 1 3A having its lower haif containing metal or the like. This magazine 1 OA is fabricated by molding the material of the high molecular compound similarly to the foregoing embodiment and is formed into such an elongated tubular shape as can house a plurality of the semiconductor devices shown in Fig. 7 or 8.
Fig. 9 shows a further embodiment of the present invention, i.e., a magazine 1 OB which is suitable for flat type semiconductor devices. More specifically, the magazine 1 OB is suitable for housing the flat type semiconductor devices 2A (Fig. 10), each of which is constructed of a sealing ceramic body 3A and plural external terminals 4A extending in a horizontal direction from both the sides of the sealing body.
In Fig. 9, the magazine 1 OB is an elongated tubular magazine constructed of a transparent top wall portion 11 B, opaque side wall portions 1 2B and 1 3B containing metal or the like, and a bottom wall portion 1 4B. As shown especially in the same Figure, the top wall portion 1 B is formed with a recessed portion 110, and the bottom wall portion 1 4B is formed with a projecting well 140 such that the width W1 of the recessed portion 1 10 is made substantially equal to or slightly larger than the width W2 of the projecting well 140. As a result, the plural magazines having the construction thus far described are stacked such that the recessed and projecting portions of the adjoining magazines are nested so that their transportation can be remarkably facilitated.Moreover, the width W3 of the inner side of that rising portion 140 is designed to be smaller than the width W4 of the sealing body 3A of the semiconductor device 2A shown in Fig. 10.
When the semiconductor devices 2A are placed in such magazine 1 OB, the leading ends of the plural external terminals 4A shown in Fig. 10 contact with the inner sides of the side wall portions 1 2B and 1 3B of the magazine 1 OB so that the external terminals 4A are short-circuited and can be prevented from electrostatically breaking down. Moreover, there is established a gap between the lower side of the sealing body 3A and the inner side of the projecting well 140. As a result, in case the semiconductor device 2A is to be taken out of the magazine 1 OB, it can be easily pinched out without any contact with the external terminals 4A merely by inserting a pincette into that gap and by pinching the sealing body 3A by means of that pincette.
In order to more reliably prevent the semiconductor device 2A shown in Fig. 10 from electrostatically breaking down, it is better to make the width W3 larger than the width W4.
More specifically, where the semiconductor devices 2A are accommodated in the magazine 1 OB thus designed, the lower sides of the external terminals 4A contact, as shown in Fig. 11, with the opaque bottom wall portion 1 4B containing the metal or the like. As a result, even if the semiconductor devices 2A vibrate in the magazine 1 OB while the latter is being transported, the external terminals 4A can be maintained under their short-circuited conditions.
Incidentally, the magazine 1 0B shown in Fig. 11 may be so constructed that only the bottom wall portion 1 4B contains the metal or the like.
The magazine 1 OB shown in Figs. 9 and 11 are fabricated by molding a material of a high molecular compound similarly to the fabricating method of the magazine shown in Fig. 5 and are formed into such an elongated tubular shape as can house a plurality of the semiconductor devices shown in Fig. 10.
Here, an integral molding, in which the aforementioned plural magazines 1 OB are arranged in parallel, can be conceived as a modification of that magazine 1 OB.
Fig. 12 shows a further embodiment of the present invention, i.e., a magazine 1 OC which is suitable for a Dual-In line type semiconductor device. Above all, the magazine 1 OC is equipped at a predetermined interval, as is apparent from the same Figure, with a plurality of partitions 1 30C at its conductive portion 1 3C so that the semiconductor devices 2 may be accommodated in a plurality of rows.
In the magazine 1 OC thus constructed, as shown, the cap Cr is attached to one side opening, and the semiconductor devices 2 are inserted into the other side opening.
The confirmations of the name, number and so on of the products or the semiconductor devices 2 can be remarkably facilitated because the top wall portion 1 C is made transparent. Moreover, since the external terminals 4 of the semiconductor devices 2 are in contact with the conductive portion 1 3C, they are short-circuited so that the semiconductor devices can be prevented from electrically permanently breaking down due to the electrostatistics.
The magazine 1 OC having the construction thus far described can also be fabricated by molding the material of the high molecular compound similarly to the fabricating method of the magazine shown in Fig. 5.
Incidentally, the magazine 1 OC thus far described can be made to house the semiconductor devices shown in Figs. 7, 8 and 10 by suitably setting the interval of the partitions 1 30C.
Since the magazine thus far described is constructed such that its contacting portions which contact with the external terminals are made of a high molecular compound containing metal or the like, its function in preventing electrostatic breakdown does not deteriorate similarly to metal magazines even if the contacting portions are damaged by the external terminals of the semiconductor devices while the magazine is being transported with semiconductor devices inside. As a result, the magazine having the construction thus far described has an advantage that it can be used for a long time.
Fig. 1 3 shows a further embodiment of the present invention, i.e., a magazine which is suitable for the Dual-In line type semiconductor device similarly to the magazine shown in Fig. 3.
That magazine 1 OC has all its top wall portion 11 C, supporting portion 1 2C and terminal accommodating portions 1 3C integrally formed of a transparent high molecular compound and is fabricated by applying or non-electroplating a conductive cover film 20 of a conductive material, i.e., metal to at least the inner side of the terminal housing portions 1 3C excepting at least the top wall portion 1 C. The above-specified conductive cover film 20 is generally opaque but is not formed in the upper wall portion 1 1 C. As a result, the product name and so on of the semiconductor device can be easily recognized through the top wall portion. The magazine 1 OC thus constructed can achieve the prevention of the electrostatic breakdown similarly to the foregoing embodiments.Since especially this magazine 1 OC is fabricated, after it has been integrally molded, by coating or non-electroplating the desired conductive material under a desired condition thereby to form the conductive film 20, the surface resistance of the terminal housing portions 1 3C can be relatively freely set so that the electrostatic breakdown preventing effect can be adjusted.
In the embodiment described just above, the conductive film 20 may be formed by the method shown in Fig. 14. Specifically, after the magazine 1 1OC is integrally molded of the high molecular compound, its lower half is dipped into a liquid of the conductive material 200 so that its surface is formed with the conductive cover film. Although, in this case, the conductive cover film is also formed on the outer surface of the magazine, it may be left as it is.
As has been described hereinbefore, the magazine can be made light and inexpensive because it is wholly made of the high molecular compound; the product can be recognized without requiring any aperture, while retaining a sufficient strength, because its top wall portion is made transparent, and it can be excellently prevented from electrostatically breaking down because its terminal accommodating portions are integrally made of the conductive material such as metal.
The high molecular compound to be used for making the magazine of the present invention may be polyethylene or polypropylene in addition to the above-recited materials.
The magazine according to the present invention is also effective in preventing electrical components such as condensers from electrostatically breaking down.

Claims (10)

1. A tubular magazine for electrical components, comprising a top wall portion made of a transparent high molecular compound, and a terminal housing portion comprising a conductive material.
2. A magazine according to claim 1, wherein the terminal housing portion is made of a high molecular compound containing a conductive material.
3. A magazine according to claim 2, wherein the conductive material contained in the high molecular compound is metal.
4. A magazine according to claim 2, wherein the conductive material contained in the high molecular compound is carbon.
5. A magazine according to claim 1 , wherein the terminal housing portion is made of a high molecular compound coated internally with a conductive layer which does not extend to the top wall portion.
6. A tubular magazine for electrical components, substantially as any described herein with reference to Figs. 3, 4 and 6 to 13 of the accompanying drawings.
7. A method of fabricating a magazine for accommodating electrical components, comprising the steps of: extruding a first material of a transparent high molecular compound through a first die to form a first portion of the magazine; extruding a second material of a high molecular compound containing a conductive material through a second die to form a second portion of the magazine; and joining the first and second portions of the magazine so as to result in the magazine having a tubular shape.
8. A method according to claim 7, wherein the step of joining includes melting side edges of the first and second portions so as to enable a joining of the first and second portions into an integral structure.
9. A method according to claim 8, wherein the melting of the side edges is effected by passing the first and second portions through a bonding furnace.
10. A method of fabricating a magazine for electrical components, substantially as described herein with reference to Fig. 5 of the accompanying drawings.
GB8122467A 1980-07-23 1981-07-21 Magazine for electrical components Withdrawn GB2081226A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9978280A JPS5726457A (en) 1980-07-23 1980-07-23 Magazine

Publications (1)

Publication Number Publication Date
GB2081226A true GB2081226A (en) 1982-02-17

Family

ID=14256503

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8122467A Withdrawn GB2081226A (en) 1980-07-23 1981-07-21 Magazine for electrical components

Country Status (3)

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JP (1) JPS5726457A (en)
DE (1) DE3129138A1 (en)
GB (1) GB2081226A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2119755A (en) * 1982-04-26 1983-11-23 Meritex Plastic Ind Inc Protective enclosure for electronic devices
GB2127380A (en) * 1982-08-10 1984-04-11 Peak Plastic & Metal Prod Packaging tubes for electronic components
US4553190A (en) * 1982-08-26 1985-11-12 Minnesota Mining And Manufacturing Co. Transparent container for electrostatic sensitive electronic components
EP0210670A1 (en) * 1985-05-15 1987-02-04 Koninklijke Philips Electronics N.V. Container for electronic components
EP0227292A2 (en) * 1985-11-28 1987-07-01 Wei Hsiung Yen Packaging of electrical components
FR2605982A1 (en) * 1986-10-29 1988-05-06 Murata Manufacturing Co CASSETTE FOR STORING AN ARRAY OF ELECTRONIC COMPONENTS
US4752005A (en) * 1982-08-12 1988-06-21 Siemens Aktiengesellschaft Storage tray for semifinished and finished products, particularly for electric pin coil forms
GB2298412A (en) * 1995-02-28 1996-09-04 Menvier Research Ltd Packaging tubes

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2112753B (en) * 1981-12-29 1985-05-22 Mitsubishi Plastics Ind Magazine for electronic devices
JPS60101799U (en) * 1983-12-17 1985-07-11 日産化学工業株式会社 Container for transporting semiconductor integrated circuit packages
DE3443783C2 (en) * 1984-11-30 1996-09-26 Siemens Ag Process for the production of carriers for electrical components
US4632246A (en) * 1985-02-21 1986-12-30 Amp Incorporated Package for card edge connectors
US4671407A (en) * 1985-02-21 1987-06-09 Amp Incorporated Tray for card edge connectors
DE4443061A1 (en) * 1994-12-03 1996-06-05 Elmako Damm Gmbh Chip handling appts. for conveying chips from magazine to processing station or vice versa

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3435949A (en) * 1967-10-06 1969-04-01 Signetics Corp Magazine for integrated circuit modules
US3653498A (en) * 1970-12-24 1972-04-04 Rca Corp Static charge protective packages for electron devices
US4037267A (en) * 1976-05-24 1977-07-19 Rca Corporation Package for semiconductor components
JPS5417626A (en) 1977-07-11 1979-02-09 Hitachi Denshi Ltd Color pickup unit

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2119755A (en) * 1982-04-26 1983-11-23 Meritex Plastic Ind Inc Protective enclosure for electronic devices
GB2127380A (en) * 1982-08-10 1984-04-11 Peak Plastic & Metal Prod Packaging tubes for electronic components
US4752005A (en) * 1982-08-12 1988-06-21 Siemens Aktiengesellschaft Storage tray for semifinished and finished products, particularly for electric pin coil forms
US4553190A (en) * 1982-08-26 1985-11-12 Minnesota Mining And Manufacturing Co. Transparent container for electrostatic sensitive electronic components
EP0102185B1 (en) * 1982-08-26 1988-03-09 Minnesota Mining And Manufacturing Company Transparent container for electrostatic sensitive electronic components
EP0210670A1 (en) * 1985-05-15 1987-02-04 Koninklijke Philips Electronics N.V. Container for electronic components
EP0227292A2 (en) * 1985-11-28 1987-07-01 Wei Hsiung Yen Packaging of electrical components
EP0227292A3 (en) * 1985-11-28 1988-01-13 Yen Wei Hsiung Packaging of electrical components
FR2605982A1 (en) * 1986-10-29 1988-05-06 Murata Manufacturing Co CASSETTE FOR STORING AN ARRAY OF ELECTRONIC COMPONENTS
GB2298412A (en) * 1995-02-28 1996-09-04 Menvier Research Ltd Packaging tubes

Also Published As

Publication number Publication date
JPS5726457A (en) 1982-02-12
DE3129138A1 (en) 1982-03-18

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