GB2064865A - Light-emitting diode assembly - Google Patents

Light-emitting diode assembly Download PDF

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Publication number
GB2064865A
GB2064865A GB8038206A GB8038206A GB2064865A GB 2064865 A GB2064865 A GB 2064865A GB 8038206 A GB8038206 A GB 8038206A GB 8038206 A GB8038206 A GB 8038206A GB 2064865 A GB2064865 A GB 2064865A
Authority
GB
United Kingdom
Prior art keywords
light
emitting diode
substrate plate
diode assembly
diode chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB8038206A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of GB2064865A publication Critical patent/GB2064865A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)

Abstract

There is disclosed a light-emitting diode assembly comprising a light- emitting diode chip (14), arranged on a substrate plate (5), and a light diffusion element associated with the light- emitting diode chip. The light diffusion element is formed by a transparent cast-resin material (16), which covers the light-emitting diode chip (14) right down to the substrate plate (5) and has a substantially convex surface. The substrate plate (5) is also made of transparent material. To the cast-resin material (16) there is applied a reflecting coating (17), which covers the cast-resin material (16) right down to the substrate plate (5). The light-emitting diode chip (14) is attached by means of an electrically conductive adhesive to a conductor path, formed from transparent material, arranged on the substrate plate (5). <IMAGE>

Description

SPECIFICATION Light-emitting diode assembly The invention relates to light-emitting diode assemblies and is particularly concerned with such an assembly of the type comprising a light-emitting diode chip arranged on a substrate plate, and a light diffusion element associated with the light-emitting diode chip.
In a known light-emitting diode assembly of this type, the light diffusion element is a discrete operating component which is arranged directly downstream of the light-emitting diode chip in the direction of light emission. The substrate plate is made of opaque material. The discrete operating component must be attached to the substrate plate by means of special retaining elements. The light-emitting diode chip must be viewed from the side of the substrate plate adjacent to the operating component.
A light-emitting diode assembly in accordance with the present invention comprises a lightemitting diode chip arranged on a substrate plate, and a light diffusion element associated with the light-emitting diode chip and formed by a transparent cast-resin material which covers the lightemitting diode chip right down to the substrate plate and has a substantially convex surface, the substrate plate also being made of transparent material, and there being applied to the cast-resin material a reflecting coating which covers the cast-resin material right down to the substrate plate.
In contrast to the known art, a light-emitting diode assembly in accordance with the present invention has the advantage that its manufacture is rendered substantially simpler and more economical, and that the light-emitting diode chip can be viewed through the substrate plate.
The invention is described further hereinafter, by way of example, with reference to the accompanying drawing which is a cross-sectional view, normal to the substrate plate, of one embodiment in accordance with the present invention.
In the light-emitting diode assembly shown in the drawing, there are applied to a transparent substrate plate 5, which is made, for example, of glass, a transparent first conductor path L1 of tin dioxide or indium oxide, and an opaque second conductor path L2. The second conductor path L2 comprises a base layer 4 of tin dioxide or indium oxide, an intermediate layer 8 of tin or indium, and a gold covering layer 9. To one end of the first conductor path L1 there is adhesively attached a light-emitting diode chip 14 by means of a conductive adhesive. A gold bonding wire 15 forms a conductive connection between the light-emitting diode chip 14 and the second conductor path L2. The light-emitting material 16, which serves as a light diffusion element, having a substantially convex surface and preferably consisting of silicone resin. The cast-resin material 16 is produced by drip-position, and also serves for protection of the chip 14 and the wire 15. There is also provided a reflecting coating 17, which is applied to the castresin material 16, for example, by silver-spraying, by treatment with white paint, or by vapour-coating with aluminium. The effect of the reflecting coating 17 is that the light-emitting diode chip 14 can be viewed through the substrate plate 5, since the light is reflected by the coating 17.

Claims (8)

1. A light-emitting diode assembly comprising a light-emitting diode chip, arranged on a substrate plate, and a light diffusion element associated with the light-emitting diode chip and formed by a transparent cast-resin material which covers the light-emitting diode chip right down to the substrate plate and has a substantially convex surface, the substrate plate also being made of transparent material, and there being applied to the cast-resin material a reflecting coating which covers the castresin material right down to the substrate plate.
2. A light-emitting diode assembly as claimed in claim 1, in which the light-emitting diode chip is attached by means of an electrically conductive adhesive to a first conductor path, made of transparent material, arranged on the substrate plate.
3. A light-emitting diode assembly as claimed in claim 1 or 2, in which the cast-resin material consists of silicone resin.
4. A light-emitting diode assembly as claimed in any of claims 1 to 3, in which the first conductor path consists of a metallic oxide.
5. A light-emitting diode assembly as claimed in claim 4, in which said metallic oxide is tin dioxide or indium oxide.
6. A light-emitting diode assembly as claimed in any of claims 1 to 5, in which the surface of the light-emitting diode chip remote from the substrate plate is connected by means of a bonding wire to a second conductor path.
7. A light-emitting diode assembly as claimed in any of claims 1 to 6, in which the substrate plate is made of glass.
8. A light-emitting diode assembly substantially as hereinbefore described with reference to the accompanying drawing.
GB8038206A 1979-11-30 1980-11-28 Light-emitting diode assembly Withdrawn GB2064865A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2948252 1979-11-30

Publications (1)

Publication Number Publication Date
GB2064865A true GB2064865A (en) 1981-06-17

Family

ID=6087279

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8038206A Withdrawn GB2064865A (en) 1979-11-30 1980-11-28 Light-emitting diode assembly

Country Status (3)

Country Link
JP (1) JPS5693382A (en)
FR (1) FR2471054A1 (en)
GB (1) GB2064865A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (en) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg OPTO-ELECTRONIC COMPONENT
WO1999014810A1 (en) * 1997-09-16 1999-03-25 Polaroid Corporation Light-emitting diode
EP1244152A2 (en) * 2001-01-26 2002-09-25 Toyoda Gosei Co., Ltd. Reflective light emitting diode, reflective optical device and its manufacturing method
WO2002090825A1 (en) * 2001-04-23 2002-11-14 Lab. Sphere Corporation Lighting device using light-emitting diode
EP1275331A1 (en) * 2001-07-11 2003-01-15 Linde Aktiengesellschaft Illumination system for display cabinet
US7222993B2 (en) 2003-03-31 2007-05-29 Citizen Electronics Co., Ltd. Light emitting diode device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3128187A1 (en) * 1981-07-16 1983-02-03 Joachim 8068 Pfaffenhofen Sieg OPTO-ELECTRONIC COMPONENT
EP0083627B1 (en) 1981-07-16 1985-10-30 Elcos Electronic Consulting Services Gesellschaft mit beschränkter Haftung Optoelectronic component
WO1999014810A1 (en) * 1997-09-16 1999-03-25 Polaroid Corporation Light-emitting diode
US5990498A (en) * 1997-09-16 1999-11-23 Polaroid Corporation Light-emitting diode having uniform irradiance distribution
EP1244152A2 (en) * 2001-01-26 2002-09-25 Toyoda Gosei Co., Ltd. Reflective light emitting diode, reflective optical device and its manufacturing method
EP1244152A3 (en) * 2001-01-26 2008-12-03 Toyoda Gosei Co., Ltd. Reflective light emitting diode, reflective optical device and its manufacturing method
WO2002090825A1 (en) * 2001-04-23 2002-11-14 Lab. Sphere Corporation Lighting device using light-emitting diode
EP1275331A1 (en) * 2001-07-11 2003-01-15 Linde Aktiengesellschaft Illumination system for display cabinet
US7222993B2 (en) 2003-03-31 2007-05-29 Citizen Electronics Co., Ltd. Light emitting diode device
DE102004015903B4 (en) * 2003-03-31 2013-11-14 Citizen Electronics Co., Ltd. Light-emitting diode device

Also Published As

Publication number Publication date
FR2471054A1 (en) 1981-06-12
JPS5693382A (en) 1981-07-28

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