GB2056767A - A process and structure for Schottky transistor logic circuit - Google Patents
A process and structure for Schottky transistor logic circuit Download PDFInfo
- Publication number
- GB2056767A GB2056767A GB8023082A GB8023082A GB2056767A GB 2056767 A GB2056767 A GB 2056767A GB 8023082 A GB8023082 A GB 8023082A GB 8023082 A GB8023082 A GB 8023082A GB 2056767 A GB2056767 A GB 2056767A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- npn
- pnm
- base
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract 4
- 239000007943 implant Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims 6
- 239000010410 layer Substances 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 3
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/084—Diode-transistor logic
- H03K19/0846—Schottky transistor logic [STL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
- H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Bipolar Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6695979A | 1979-08-16 | 1979-08-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB2056767A true GB2056767A (en) | 1981-03-18 |
Family
ID=22072826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB8023082A Withdrawn GB2056767A (en) | 1979-08-16 | 1980-07-15 | A process and structure for Schottky transistor logic circuit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5630753A (de) |
| DE (1) | DE3030884A1 (de) |
| FR (1) | FR2463544A1 (de) |
| GB (1) | GB2056767A (de) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0062982A2 (de) * | 1981-03-23 | 1982-10-20 | Fujitsu Limited | Integrierte Schaltung mit einer Isolationszone und mit einer Substratelektrode |
| EP0178968A2 (de) * | 1984-09-14 | 1986-04-23 | Fairchild Semiconductor Corporation | Basisgekoppelte Transistorlogik |
| US6573582B2 (en) * | 2001-07-23 | 2003-06-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
-
1980
- 1980-07-15 GB GB8023082A patent/GB2056767A/en not_active Withdrawn
- 1980-08-13 FR FR8017835A patent/FR2463544A1/fr active Pending
- 1980-08-14 DE DE19803030884 patent/DE3030884A1/de not_active Withdrawn
- 1980-08-14 JP JP11229280A patent/JPS5630753A/ja active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0062982A2 (de) * | 1981-03-23 | 1982-10-20 | Fujitsu Limited | Integrierte Schaltung mit einer Isolationszone und mit einer Substratelektrode |
| EP0062982A3 (en) * | 1981-03-23 | 1986-05-21 | Fujitsu Limited | Isolated integrated circuit comprising a substrate electrode |
| EP0178968A2 (de) * | 1984-09-14 | 1986-04-23 | Fairchild Semiconductor Corporation | Basisgekoppelte Transistorlogik |
| EP0178968A3 (en) * | 1984-09-14 | 1988-09-14 | Fairchild Semiconductor Corporation | Base coupled transistor logic |
| US4947230A (en) * | 1984-09-14 | 1990-08-07 | Fairchild Camera & Instrument Corp. | Base-coupled transistor logic |
| US6573582B2 (en) * | 2001-07-23 | 2003-06-03 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5630753A (en) | 1981-03-27 |
| DE3030884A1 (de) | 1981-03-26 |
| FR2463544A1 (fr) | 1981-02-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |