GB2055243A - Tilting planar beam probes - Google Patents
Tilting planar beam probes Download PDFInfo
- Publication number
- GB2055243A GB2055243A GB7926814A GB7926814A GB2055243A GB 2055243 A GB2055243 A GB 2055243A GB 7926814 A GB7926814 A GB 7926814A GB 7926814 A GB7926814 A GB 7926814A GB 2055243 A GB2055243 A GB 2055243A
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- deflection
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- screen
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- 239000000523 sample Substances 0.000 title claims description 45
- 238000004804 winding Methods 0.000 claims description 21
- 210000001747 pupil Anatomy 0.000 claims description 18
- 238000003384 imaging method Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000006073 displacement reaction Methods 0.000 claims description 11
- 230000001902 propagating effect Effects 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 238000007493 shaping process Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 229910000859 α-Fe Inorganic materials 0.000 claims description 4
- 238000010894 electron beam technology Methods 0.000 abstract description 11
- 230000005284 excitation Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1505—Rotating beam around optical axis
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31776—Shaped beam
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
In the patterned electron beam irradiation of a target 20-the beam being shaped as a variable rectangle by deflection between rectangular aperture diaphragms 5 and 8, and being deflectable over the target by deflector 18-the beam impact area on the target is additionally rotatable about one of its corners (Fig. 3b) through a fixed angle, e.g. 45 DEG , and without upsetting either tile focussing, or the centering on diaphragm 12, by the simultaneous reversal of current through the additional magnetic lens 26 which produces a field parallel to the axis, and the additional deflection systems 29 and 30. Lens system 22, 23, 24 permits the plane of either the diaphragm 12 or the target 20 to be imaged on a screen 25 whereby, by periodically switching between the normal and rotated modes at 50 Hz, a stationary display may be produced on the screen to facilitate calibration of the apparatus (Fig. 3a to b). <IMAGE>
Description
SPECIFICATION
Method and device for tilting planar beam probes.
This invention relates to a particle beam device, and particularly to an electron beam device used for irradiating a target, which is provided with means for deflecting the electron beam on the target and is equipped with means for shaping the cross-section of the electron beam on the target.
Such electron beam devices are used, for example, for generating pre-programmed radiation patterns on lacquer-coated semi-conductor discs for the purpose of producing micro-electronic components.
In electron beam devices of the area of application mentioned, for the purpose of generating an electron probe on the target, the field of illumination bounded by a screen is imaged on to the target with the aid of electron-optical lenses and deflected with the aid of a deflection system to a location which is predetermined by the control programme. Devices have been described and developed in which the crosssection of the beam on the target has the shape of a rectangle, the lengths of the sides of the rectangle being adjustable electronically. This made it possible to increase the speed ot exposure considerably with respect to electron beam devices with a constant cross-section.
The elementary cell of the planar beam probe is a square of the size of the smallest structural detail to be exposed, the sides of the square parallel to the x and y-directions of deflection being set to a fixed value. In these directions the form of the planar beam probe can be distended to a rectangle of a size predetermined by the control programme within a few micro-seconds without loss of intensity of irradiation.
In the practice of circuit design, apart from exposure patterns which can be easily resolved into the range of mutually parallel rectangles of the planer beam probe, there are also structures in which the speed of exposure is greatly reduced because the planner beam probe has to be adjusted for its smallest unit. Such structures are, for example, oblique tracts.In circuit technology it is considered an advantage if the capability of the planar beam probe could be extended by rectangular shapes with an angle of inclination of, for example, 450C In order to generate planar beam probes which can also assume the shape of circular areas or oblique rectangles, it has been suggested to join the principle of the image of a first screen which can be displaced on a second screen, forming the basis of the devices with a planar beam probe, to the principle of pattern imaging (German
Democratic Republic Patent Specification 126,438). The difficulty here is that every additional shape must be represented by one opening each of corresponding shape in the second screen constructed as pattern.
Another possibility consists in adding to the beam-limiting cutting edges of the first and second screen, located at right angles to each other, in the planar beam devices further cutting edges in the manner of a polygonal shape in such a way that also beam cross-sections of oblique rectangular shape can be set on the target with the superimposed imaging of the two screens (German Offenlegungsschrift 2,674,855).
The disadvantage of such arrangement consists in that the field of illumination to be illuminated uniformly must be considerably greater than the greatest rectangular cross-section of the beam which can be set, thus reducing the intensity in the cross-section of the beam.
Another possibility consists in bringing about a rotation of the image by an angle, which can even be any angle, with the aid of a magnet lens disposed between the second screen and the target. it has not been possible hitherto to implement this method since the rotation of the image is inevitably associated with a defocusing and with an amount of deflection which is inadmissibly high, taking into consideration the high degree of accuracy demanded.
In order to avoid the defocusing occurring with rotation of the image it has been suggested, according to German Offenlegungsschrift 2,721,704, to combine the magnetic lens with a lens acting electrostatically by inserting a cylindrical electrode into the magnetic lens and applying it to a voltage depending on the excitation of the magnetic lens. Apart from the technical disadvantages associated with the installation of an electro-static electrode, this does not improve the conditions for image rotation without deflection.
It is an object of the invention to provide a method and a device for carrying it out, by means of which the restriction of the range of crosssectional shapes of the planar beam probe to one class, containing only mutually parallel rectangular shapes, is obviated and is extended by a second class containing again rectangular shapes which are mutually parallel in themselves, the difference between the first and the second class being that the rectangular shapes of the secpnd class are rotated by an angle of preferably 450 with respect to the rectangular shapes of the first class.
The advantage of the invention lies in that also oblique tracts, and particularly such tracts with an angle of inclination of 450, can be written at a high speed of exposure without restriction in accuracy, which considerably increases the flexibility and productivity of the electron beam devices with a planar beam probe.
The invention is based on the task of providing a method and an associated device which makes it possible to rotate the planar beam probe, which is variable in its rectangular shape, with a high accuracy by an angle of preferably 450.
Furthermore, the task consists in that the rotation takes place about a corner point of the planar beam probe without displacing it. The adjusting time from the one class to the other should be less than 1 millisecond without loss in sharpness and accuracy.
In a method for tilting planar beam probes in a particle beam device, particularly an electron radiation system in which the cross-section of the electron beam, called planar beam probe, is delimited in the plane of the target by the image of beam-shaping masks or cutting edges transferred by at least one electromagnetic propogating lens and in which the plane of the target can be imaged on a video screen with the aid of a projection system, the task is solved by applying the following steps:
In order to tiit the planar beam probe the image of the beam-shaping masks is rotated in the plane of the target by generating in front of the propagating lens in the direction of the beam a magnetic field, which is aligned parallel to the optical axis and acts on the shaped beam, and the polarity of which is reversed for tilting.In order to adjust the pole-reversal centre of image rotation to one corner of the planar beam probe which is the fixed point for the change of format, its image is deflected in the plane of the target by generating a magnetic field which is aligned vertically with respect to the optical axis and the polarity of which is reversed in synchronism with the pole-reversal of the magnetic field in parallel with the axis, and by adjusting the strength and the direction of deflection in such a manner that the fixed point for the format is also the fixed point for the pole reversal.It is of advantage if, in order to avoid a displacement of the pupil in the apertured screen during pole-reversal, the pupil is deflected by generating a further deflection field which is vertical with respect to the axis and the poles of which are reversed in synchronism with the pole-reversal of the magnetic field in parallel with the axis, and by adjusting its strength and direction in such a manner that the displacement of the pupil is compensated. It is of advantage if, in order to avoid a defocusing of the planar beam probe in the plane of the target during the polereversal of the magnetic field, the latter is overlaid by a DC magnetic field the strength of which is adjustable.It is useful that for adjusting the amplitude of pole-reversal of the magnetic field, of the amplitudes of pole-reversal of the first and second deflection fields and of the amplitude of the DC magnetic field the behaviour, on the one hand, of the planar beam probe in the plane of the target and, on the other hand, the behaviour of the pupil in the apertured screen, can be made visible during the pole-reversal by imaging the plane of the target or the plane of the aperture screen, respectively on a video screen with the aid of a projection system.
For carrying out the method of tilting planar beam probes an electron radiation system is used which contains first and second beam limiting masks for shaping the cross-section of the beam, at least one electro-magnetic propagation lens for imaging the beam limiting screens into the plane of the target and an imaging system for projecting the plane of the target on to a video screen.
According to the invention, in such an electron radiation system an additional lens consisting of a plurality of circular windings of wire is disposed coaxially with respect to the optical axis between the second beam limiting screen and the propagating lens and connected to a current generator via a pole-reversal switch. By reversing the polarity of the current the polarity of the magnetic field generated by this electric current is also reversed which rotates the image of the beam shaping screen, that is the planar beam probe.
Furthermore, at the front faces of the additional lens a deflection system is arranged for fixing the pole-reversal centre to the fixed point for the format and, if necessary, a further deflection system for preventing a displacement of the pupil in the apertured screen, and connected to current generators via pole-reversal switches. Additional deflection systems may be connected in opposition to the said deflection systems in order to place the pivot points of the beam deflection into the desired planes. For the purpose of limiting the field spatially the additional lens may be encapsulated with ferrite and the deflection systems may be toroidal deflection systems with a toroid made of ferrite. The poles of the current in the additional lens and in the deflection systems are reversed electronically.Since the pole-reversal in the additional lens can lead to undesirable defocusing it is useful to superimpose coaxially a second winding, fed with a constant direct current, on the additional lens. It is also possible, however, to add a constant direct current to the polereversal current in the exciter winding of the additional lens. It is also possible to add to the pole-reversal current in the exciter windings of the deflection system direct currents which are constant with respect to the pole-reversal and which can be adjusted for the purpose of centring the electron beam.
In order that the invention may be more readily understood, reference is made to the accompanying drawings which illustrate diagrammatically and by way of example embodiments thereof, and in which: Figure 1 shows a diagrammatic representation of an electron beam device which includes the device according to the invention;
Figure 2 shows an electric circuit of the device according to the invention; and
Figures 3a to 3h are used for explaining the setting of the adjusting device for tilting the planar beam probe.
In Figure 1 the beam 2 issuing from the
crossover 1 of a beam generating system is
clipped by the cutting edges 3 and 4, which are
placed vertically with respect to one another, of a
first beam limiting screen 5 and the cutting edges
6 and 7, which are also placed vertically with
respect to one another, of a second beam limiting
screen 8 in such a manner that in the plane of the
second beam limiting screen 8 the cross-section
of the beam has the shape of a rectangle by
imaging the beam limiting screen 5 in a
complementary manner on to the beam limiting
screen 8 with the aid of the condenser lenses 9
and 10.The format of the rectangular cross section of the beam is adjustable by displacing the position of the image of the first beam limiting screen 5 in the plane of the second beam limiting screen 8 vertically with respect to the axis by means of beam deflection by the format deflection system 11. So that during the adjustment of the format the image of the crossover 1, the so-called pupil, located in the plane of the apertured screen 12 is not displaced, at the level of the virtual pivoting plane of the format deflection system 11 an intermediate image 13 of the crossover is produced with the aid of the condenser lens 9, whereby the intermediate image 13 images the condenser lens 10 into the plane 14 of the second intermediate pupil which, in turn, is optically conjugated into the plane of the apertured screen 12 via the intermediate lens 1 5. The intermediate lens 1 5 images the cross-section of the beam, shaped into a rectangle with adjustable format and constant lateral alignment in the plane of the second beam limiting screen 8, at reduced size into the plane of the intermediate image 16, and the deflection lens 19 consisting of the propagating lens 17 and the deflection system 18 transfers this cross-section of the beam to any place within the operating field in the plane of the target 20 in that the lens 1 7 images the plane 1 6 on to the plane 20 and the deflection system 1 8 deflects the beam.The lateral directions of the rectangular planar beam probe are preferably aligned optically parallel to the x- and y- direction of deflection of the beam of the deflection system 1 8 in that the cutting edges of the beam limiting screens 5 and 8 are mechanically pre-adjusted, taking into consideration the image rotation of the lenses 15 and 17. A deflection system 21 makes it possible to centre the pupil for the centre of the apertured screen 12. An imaging system consisting of the lenses 22, 23 and 24 makes it possible to image the plane of the target 20 or of the apertured screen 12, respectively, on the video screen 25.
In principle it is possible to rotate the planar beam probe by altering the excitation of the intermediate screen 1 5. However, this will give rise both to axial displacements of the imaging planes 1 6 and 20 conjugated to the plane of the beam limiting screen 8 and an axial displacement of the pupil due to the defocusing effect of the intermediate lens 1 5. In order to compensate for the associated side effects the excitations of the lenses 1 7 and 10 must be re-adjusted which again causes maladjustment of the format, requiring readjustment and calibration of the format.Since there is no guarantee that the image of the intersection of the two cutting edges 6 and 7 of the second beam limiting screen 8 in the plane of the target 20 will not shift with an alteration of the excitation of the lens 1 5, after each format
rotation a new positioning must be effected which
is problematic, however, inasmuch as there is no parallelism of the planar beam probe with respect to the edge of the mark of the first positioning.
Finally there is no guarantee that with a change in
the excitation of the lens 1 5 the concentric
position of the pupil with respect to the opening of the apertured screen 12 is retained so that the pupil must be re-adjusted in that the displacement of the pupil which has occurred is compensated for by deflecting the beam with the aid of the deflection system 21.
In order to improve the method described, the function of tilting the planar beam probe is therefore transferred to an additional lens 26 which is disposed between the second beam limiting screen 8 and the intermediate lens 1 5. An electric current flows constantly through the exciter winding 27 of the additional lends 26 and the planar beam probe is tilted by reversing the polarity of this current. The initial adjustment in the electron-optical system, therefore, takes place already with the excited additional lens 26. With a pole-reversal at the additional lens 26 a small amount of defocusing can occur due to the fact that in the region of the axis of the additional lens 26 there is a constant magnetic field which does not originate from the exciter winding 27.In order to eliminate this interference a DC magnetic field, which is constant with respect to the magnetic pole-reversal field of the exciter winding 27, is generated either by adding a constant direct current to the pole-reversal current in the exciter winding 27 or by providing a second exciter winding 28 which is fed with a constant direct current. The amplitude and direction of the direct current are adjusted in such a manner that there is no defocusing of the planar beam probe in its normal and inclined position.In order to ensure that the intersection of the cutting edges 6 and 7 in the image of the beam limiting screen 8 is the pivoting point of the planar beam probe during the transition from its normal position to the inclined position and vice versa, a deflection system 29 is provided which is fed with a current the polarity of which is reversed in synchronism with the rotation of the planar beam probe. The amplitude of the current is adjusted in such a manner that the deflection generated with the pole-reversal of the deflection system 29 compensates for the displacement of the said corner of the beam limiting screen 8 occurring with the pole-reversal of the exciter winding 27. The poles of the deflection system can also be reversed by adding the pole-reversal current to a constant direct current of the deflection system.
Analogously, provision for retaining the centring of the pupil with respect to the apertured screen during the rotation of the planar beam probe is made by providing a deflection system 30 which is fed with a current the polarity of which is reversed in synchronism with the rotation of the planar beam probe. It is adjusted in such a manner that the deflection generated with the polereversal of the deflection system 30 compensates for the displacement of the pupil occurring with the pole-reversal of the exciter winding 27.
In Figure 2 the exciter winding 27 is connected to a current generator 33 via current lines 31 and a pole-reversal switch 32. Similarly, the deflection systems 29 and 30 are connected to current generators 38 and 39, respectively, via current lines 34 and 35, respectively, and pole-reversal switches 36 and 37, respectively. The deflection systems 29 and 30 consist each of two separately adjustable deflectors, one each for the x-direction of deflection and one each for the y-direction of deflection.
The deflectors for the y-direction of deflection and their power supplies, both of which are not shown in Fig. 2, are also connected to one current generator each via feeder lines and one polereversal switch each. Thus a command output by the control programme will cause the simultaneous switching of five pole-reversal switches. It is of advantage if the deflection systems 29 and 30 place the pivoting points of the beam deflection into the planes 14 of the intermediate pupil and of the second beam limiting screen 8 by connecting additional deflection systems 40 and 41 in opposition to the deflection systems 29 and 30. Exciter winding 28 is connected to a current generator 43 via feeder lines 42. The amplitude of the current and the direction of the current of the current generators are adjustable.
For the purpose of calibrating the adjusting device for tilting the planar beam probe a control programme can be used to alter the parameters of the cross-section of the beam, position, format and/or placement periodically at a frequency of, for example, 50 Hz. It is possible to make the respective periodic status sequence of the crosssection of the beam visible as a stationary image on the video screen 25 via the projection imaging system. By way of examples, in Figures 3a to 3f various possibilities are explained.In Figure 3a reference numeral 44 represents the square zero format of the planar beam probe in its normal position produced with non-excitement of the format deflection system 11 and with nonexcitement of the placement deflection system 1 8. Reference numeral 45 represents the zero format in the state of excitement of the winding 27 with reversed poles. Reference numeral 46 designates the image point of the intersection of the cutting edges 6 and 7 which has been deflected to image point 47 in the rotated state of the planar beam probe. The strength and direction of the deflection system 29, the poles of which have been reversed synchronously, are adjusted in such as manner that the two image points 46 and 47 coincide, as shown in Figure 3b.
If in addition to the rotation the format, too, is changed in the manner shown in Figure 3c, a criterion for the adjustment of the excitation of the winding 27 is obtained.
In Figure 3c the angle of rotation is smaller than the nominal angle 450, and in Figure 3dthe angle of rotation is exactly 45 0.
Another possibility for creating a criterion for adjusting the amplitudes of excitation of the winding 27 is shown in Figures 3e and 3f. Here a placement sequence of the zero format, used for the calibration of the format, is rotated by 450 or another predetermined nominal angle by rotating the direction of deflection of the placement deflection system, as shown in Figures 3g and 3h and applied to the rotated zero format. In Figure 3e the angle of rotation of the zero format is smaller and in Figure 3f larger than the nominal angle, which is predetermined by the electronic rotation of the direction of deflection of the placement deflection system 1 8 and determines the angle of inclination of the planar beam probe by causing the area 48, which is not illuminated, to disappear.
It is of advantage if the cycles of the placement sequence of Figures 3g and 3h follow one another periodically and produce a stationary image on the video screen 25. During the calibration of the pole-reversal amplitude of the winding 27 for disappearance of the piece of area 48, the zero format, too, is rotated in its normal position which in the placement cycle of the normal position of
Figure 3g now causes a piece of area analogous to 48 to stand out against its environment due to its contrast. It can be made to disappear by means of rotating the image by adjusting the excitation of the intermediate lens 1 5.
A displacement of the pupil in the apertured screen 12 can be made visible directly by imaging the apertured screen on the video screen, or indirectly by comparing the brightness of the four corners of the zero format abutting one another in the centre of the placement sequence. The displacement of the pupil is corrected by adjusting the strength and the direction of the deflection system 30, the polarity of which is reversed synchronously.
A difference in the edge sharpness of the planar beam brobe in its normal and in its inclined position is eliminated by adjusting the excitation of the winding 28.
Claims (11)
1. Method of tilting planar beam probes in a particle beam device, particularly in an electron radiation system in which the shaped crosssection of the beam is imaged by at least one electromagnetic propagating lens into the plane of the target and in which the plane of the target can be imaged on a video screen, characterised in that in the direction of the beam in front of the propagating lens a magnetic field acting on the shaped beam and aligned parallel to the optical axis is generated and that its poles are reversed for the purpose of tilting the planar beam probe, and that for adjusting the pole-reversal centre to a corner of the planar beam probe a deflection field placed perpendicularly with respect to the optical axis and of adjustable strength and direction is generated and its poles are reversed in synchronism with the field parallel to the axis.
2. Method according to claim 1, wherein for compensating a displacement of the pupil a further deflection field placed perpendicularly with respect to the axis and of adjustable strength and direction is generated and that its poles are reversed in synchronism with the field parallel to the axis.
3. Method according to claim 1 or 2, wherein any defocusing occurring with the rotation of the planar beam probe is compensated by superimposing a DC magnetic field of adjustable strength on the magnetic field parallel to the axis.
4. Method according to claim 1, wherein the inclination of the planar beam probe is checked according to criteria which can be made visible during the imaging of the plane of the target on the video screen by altering the angular position, the format and/or the placement of the crosssection of the beam periodically.
5. Method of tilting planar beam probes in a particule beam device, substantially as herein described with reference to and as shown in the accompanying drawings.
6. Device for tilting planar beam probes in a particle beam device, particularly in an electron radiation system, which includes first and second beam limiting screens for shaping the crosssection of the beam, at least one electromagnetic propagating lens for imaging the beam limiting screen into the plane of the target and one imaging system for projecting the plane of the target on to a video screen, characterised in that an additional lens consisting of a plurality of circular windings of wire is disposed coaxially with respect to the optical axis between the second beam limiting screen and the propagating lens and is connected to a current generator via a pole reversal switch, and that furthermore at at least one front face of the additional lens at least one deflection system is arranged and connected to a current generator via a pole-reversal switch.
7. Device according to claim 6, wherein a deflection system is arranged at both front faces of the additional lens.
8. Device according to claim 6 or 7, wherein additional deflection systems are connected in opposition to the or each of said first mentioned deflection systems.
9. Device according to claim 6, wherein the additional lens consists of two part-windings, the second part-winding being connected to a current generator which supplies a direct current of adjustable amplitude.
10. Device according to any of claims 6 to 9, wherein the additional lens is encapsulated with ferrite and that as deflection systems toroidal deflection systems are used with a toroid made of ferrite.
11. Device for tilting planar beam probes in a particle beam device, substantially as herein described with reference to and as shown in the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7926814A GB2055243B (en) | 1979-08-01 | 1979-08-01 | Method and device for tilting planar beam probes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB7926814A GB2055243B (en) | 1979-08-01 | 1979-08-01 | Method and device for tilting planar beam probes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB2055243A true GB2055243A (en) | 1981-02-25 |
| GB2055243B GB2055243B (en) | 1983-07-06 |
Family
ID=10506928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB7926814A Expired GB2055243B (en) | 1979-08-01 | 1979-08-01 | Method and device for tilting planar beam probes |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2055243B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125614A (en) * | 1982-07-28 | 1984-03-07 | Hitachi Ltd | Apparatus for electron beam lithography |
| EP0106154A2 (en) * | 1982-09-22 | 1984-04-25 | Siemens Aktiengesellschaft | Deflecting objective for neutral particle beams of variable shape, and method of operating it |
| EP0165772A2 (en) * | 1984-06-19 | 1985-12-27 | Texas Instruments Incorporated | Charged particle sources |
| GB2197751A (en) * | 1986-11-24 | 1988-05-25 | Philips Electronic Associated | Variable shaped spot electron beam pattern generator |
| EP0769800A3 (en) * | 1995-10-20 | 1997-12-17 | AT&T Corp. | An apparatus for controlling a charged particle beam and a lithographic process in which the apparatus is used |
-
1979
- 1979-08-01 GB GB7926814A patent/GB2055243B/en not_active Expired
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2125614A (en) * | 1982-07-28 | 1984-03-07 | Hitachi Ltd | Apparatus for electron beam lithography |
| EP0106154A2 (en) * | 1982-09-22 | 1984-04-25 | Siemens Aktiengesellschaft | Deflecting objective for neutral particle beams of variable shape, and method of operating it |
| EP0106154A3 (en) * | 1982-09-22 | 1986-08-06 | Siemens Aktiengesellschaft Berlin Und Munchen | Deflecting objective for neutral particle beams of variable shape, and method of operating it |
| EP0165772A2 (en) * | 1984-06-19 | 1985-12-27 | Texas Instruments Incorporated | Charged particle sources |
| EP0165772A3 (en) * | 1984-06-19 | 1987-05-27 | Texas Instruments Incorporated | Charged particle sources |
| GB2197751A (en) * | 1986-11-24 | 1988-05-25 | Philips Electronic Associated | Variable shaped spot electron beam pattern generator |
| EP0269181A2 (en) * | 1986-11-24 | 1988-06-01 | Philips Electronics Uk Limited | Variable shaped spot electron beam pattern generator |
| EP0269181A3 (en) * | 1986-11-24 | 1989-03-01 | Philips Electronics Uk Limited | Variable shaped spot electron beam pattern generator |
| EP0769800A3 (en) * | 1995-10-20 | 1997-12-17 | AT&T Corp. | An apparatus for controlling a charged particle beam and a lithographic process in which the apparatus is used |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2055243B (en) | 1983-07-06 |
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| PCNP | Patent ceased through non-payment of renewal fee |