GB2044749A - Heterophasic ceramic composition - Google Patents

Heterophasic ceramic composition Download PDF

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Publication number
GB2044749A
GB2044749A GB7920788A GB7920788A GB2044749A GB 2044749 A GB2044749 A GB 2044749A GB 7920788 A GB7920788 A GB 7920788A GB 7920788 A GB7920788 A GB 7920788A GB 2044749 A GB2044749 A GB 2044749A
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United Kingdom
Prior art keywords
composition
heterophasic
ceramic
lead germanate
barium titanate
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GB7920788A
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GB2044749B (en
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University of Illinois
University of Illinois Foundation
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University of Illinois
University of Illinois Foundation
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Priority claimed from US06/024,099 external-priority patent/US4218723A/en
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Publication of GB2044749A publication Critical patent/GB2044749A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • H01G4/1209Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics
    • H01G4/129Ceramic dielectrics containing a glassy phase, e.g. glass ceramic

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  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)
  • Ceramic Capacitors (AREA)

Abstract

A heterophasic ceramic composition comprises a major amount of barium titanate and a minor amount of a lead germanate composition having the formula (PbO)x(GeO2)y-z(SiO2)z wherein 1<x</= 6, y ranges from 1 to 3, and Z ranges from more than 0.0 to 0.75 y, the ceramic composition being characterized in that densification is effected by liquid phase sintering to yield the heterophasic structure in which the lead germanate composition provides a continuous intergranular phase which separates the barium titanate phase into discrete localized volumes.

Description

SPECIFICATION Heterophasic ceramic composition This invention relates to novel ceramic compositions, to methods for producing them and to ceramic capacitors utilizing such compositions.
In modern electronic circuitry where high volumetric efficiency in capacitance is required, miniaturized capacitors based upon high dielectric constant materials are increasingly important. Most representative of all high dielectric ceramics is barium titanate, a material that offers a wide range of applications in the fabrication of monolithic multi-layer ceramic capacitors. Such multi-layer capacitors are well known in the art and comprise alternate layers of a ceramic dielectric and metal electrodes, bonded together in a monolithic structure. Alternate electrodes are connected together at one end of the structure and the other electrodes are connected together at the other end. Usually, the electrodes are connected together by a metal terminal applied to the ends of the structure.In the firing of such structures based upon conventional barium titanate ceramics, temperatures of the order of 1 300-1 4000C are required, and at these high temperatures in air expensive electrode systems utilizing the noble metals such as platinum and palladium must be used.
Our copending U K Patent Application No. 41933/78 Serial No. 2014126 describes and claims a BaTiO3 ceramic composition that can be fired at relatively low temperatures and provide, by liquid sintering, a heterophasic composition of high dielectric strength and low dissipation factor.
According to said application, there are provided compositions comprising a major amount of BaTiO3 and from 1 to 33 volume percent of Pb5Ge30", said composition being capable of forming a heterophasic ceramic body by liquid phase sintering at a temperature within the range of about 7500--10500C.
The present applications provided further compositions of similar utility.
According to the present invention there are provided heterophasic ceramic compositions comprising a heterophasic ceramic composition comprising a major amount of barium titanate and a minor amount of a lead germanate composition having the formula (PbO)x(GeO2)y-z(sio2)z wherein 1 xA6, y ranges from 1 to 3, and z ranges from 0.0 to 0.75y, the ceramic composition being characterized in that densification is effected by liquid phase sintering to yield the heterophasic structure in which the lead germanate composition provides a continuous intergrannular phase which separates the barium titanate phase into discrete localized volumes, with the proviso that when said heterophasic ceramic composition comprises from 1 to 33 volume percent of said lead germanate composition and x is 5 and y is 3, z is other than zero.
Compositions according to the invention can be fired at 750-1 0500C to provide heterophasic ceramic bodies of high dielectric strength and low dissipation factor. The relatively low firing temperature permits use of inexpensive, non-noble metals and alloys thereof as electrodes in the fabrication of monolithic multi-layer capacitors.
The invention will now be described in more detail with particular reference to the accompanying drawings of which: Figure 1 is a cross-sectional view of the monolithic multi-layer capacitor of this invention having alternate layers of ceramic dielectric 10, staggered electrodes 1 and terminal contact electrodes 12 at each end.
Figure 2 is a sectional view of the ceramic dielectric of Figure 1 taken along the axis 2-2'.
illustrated in the heterophasic microstructure of the mature ceramic comprising a continuous lead germanate derived phase 20 and a discrete barium titanate phase 21.
Figure 3 is a phase diagram of the PbO--GeO, system showing the melting points of various lead germanate compositions.
For the practice of this invention, the system barium titanate-lead germanate was found to be particularly suitable. For example, BaTiO3 of from about 1 to about 10 micron particle size is admixed with from about 1 to about 33, preferably from about 5 to about 25, volume % of a lead germanate composition; minor amounts of other ceramic materials can be incorporated in the mixture, for example, up to about 25 volume % of one or more of the following: SrTiO3, CaZrO3, TiO2, and the like. After the ceramic body is formed, a metal electrode of silver, copper, aluminum, iron, cobalt, nickel, or mixtures thereof is deposited thereon and multiple layers of the combination are stacked and pressed into a monolithic capacitor structure.The green ceramic structure is then fired, usually in air, for generally from about 1 to about 60, typically from about 2 to about 45, and preferably from about 2 to about 20 minutes, at a temperature of generally from about 750 to about 1050, typically from about 800 to about 1000, and preferably from about 850 to abdut 9500C. If firing temperatures substantially in excess of about 1 0500C were used, relatively inexpensive, non-noble metals and alloys thereof could not be used in the fabrication of monolithic multi-layer capacitors. Temperatures substantially below about 7500C are either not effective or require excessively long firing times.
Although firing temperatures and time for firing are interrelated (i.e., the higher the firing temperature, the shorter the firing time, and vice versa), it has been found that firing times in excess of about 60 minutes are unnecessary and uneconomical. Firing times substantially less than about 1 minute are not effective to produce the desired result even at relatively high firing temperatures.
Firing of the ceramic structure can also be carried out in controlled atmospheres, for example in an atmosphere having a low partial pressure of oxygen. Consolidation, or densification, of the ceramic occurs by liquid phase sintering to yield a pore-free, heterophasic structure in which a continuous intergranular lead germanate derived phase separates the major barium titanate phase into discrete localized volumes. Under the above-described conditions, there is essentially no reaction between the bariumtitanate phase and the lead germanate derived phase.
In the barium titanate-lead germanate system it was found that the degree of densification increased with the amount of liquid phase present. Dielectric constant, however, decreased with increasing amounts of liquid phase. By considering both dielectric and densification characteristics, the preferred amount of liquid phase for rapid sintering at 1 0000C was found to be from about 10 to about 1 5 volume %, which provided a ceramic having dielectric constant values in the range of from about 1000 to about 1500.
The term "lead germanate" in this specification is meant to include lead and germanium containing compounds such as Pb5Ge3O11, and lead, germanium, and silicon containing compounds as defined by the formula: (PbO),(GeO,),~,(Si0,), where 1 < xA6, y ranges from 1 to 3, and z ranges from 0.0 to 0.75y. Mixtures of two or more compounds can also be used.
Lead germanate compositions suitable for the liquid phase sintering step can be prepared by heating various mixtures of PbO and GeO2 up to temperatures of about 100000. The phase diagram in Figure 3 shows the melting points for various molar ratios of PbO and GeO2. For the purposes of this invention, lead germanate compositions having melting points below about 8500C are preferred.
Because of the relatively high cost of GeO2 a portion of it can be replaced advantageously with SiO2.
The lead germanate composition having the formula Pb5Ge3011 is a preferred composition because it melts congruently (i.e., solid and liquid phases have identical compositions) to provide a low viscosity melt which is advantageous for rapid and complete liquid phase sintering. The composition is prepared by heating in a platinum crucible at about 7500C 5 moles of PbO and 3 moles of GeO2 until a clear liquid is formed. The cooled product, having the formula Pb5Ge3011, is crushed and powdered in a mortar and pestle, screened through a 325 mesh sieve, and further reduced by ball milling. The final powder has a particle size ranging from about 0.5 to about 50 microns with the greatest concentration at about 5 microns.
The following description and data are presented to illustrate the practice and advantages of the instant invention. The materials used were reagent grade PbO and GeO2, and research grade BaTi03.
The lead germanate composition was prepared as described above. The research grade BaTlO3 had an average particle size of about 1 micron.
For the purpose of measuring electrical properties, BaTiO3 was admixed with 10, 20, and 30 volume % of Pb5Ge301,. Pellets 1.25 cm in diameter and 0.2 cm thick were prepared in a die by dry pressing at a pressure of 30,000 psi. The pellets were sintered isothermally at 850, 900, 950, 1000, and 1 0500C for 5 minutes. Quick air-drying silver paste was used to provide electrodes on the surface of the specimens.
Capacitance and dissipation factor were measured over a temperature range of 25 to 1 600 C.
Ratings were recorded at 100 KHz. The weak field signal voltage applied across the specimens was 0.5 volts r.m.s.
Table I lists dielectric constants, K', and dissipation factors, tan, for BaTiO3-PbGe3O11 ceramic compositions containing 10, 20, and 30 volume % of Pb5Ge301t sintered at 95000. These data illustrate that low temperature sintering of the compositions of this invention provides ceramic capacitors possessing excellent electrical characteristics.
TABLE I Dielectric Measurements on Liquid Phase Sintered BaTiO3(1 micron) + Pb5Ge3O11 (X) T5 = 950'C, ts = 5 min. 100 KHz
X = 10 Vol. % X = 20 Vol. % X = 30 Vol. % T(C ) K' tan # K' tan # K' tan # 25 1210 0.012 825 0.016 490 0.016 60 1180 0.010 822 0.017 495 0.015 70 1176 0.009 - - - 80 1205 0.009 828 0.013 498 0.0156 90 1248 0.009 841 0.014 - 100 1302 0.009 885 0.012 516 0.016 110 1387 0.0096 950 0.014 526 0.016 120 1440 0.0095 954 0.012 544 0.016 130 1319 0.009 911 0.011 537 0.016 140 1193 0.010 844 0.013 514 0.015 160 1000 0.012 - - 467 0.020 Table II lists dielectric constant and dissipation factor measurements for a BaTiO3-1 0 Vol.% Pb5Ge3O11 composition sintered at temperatures in the range of 850-1 0500 C. These data illustrate that especially good electrical characteristics are obtained with sintering temperatures at the high end of the range 850-1 0500C. Satisfactory electrical properties, however, are obtained over the entire range of sintering temperatures.
Table III lists comparative data for ceramic compositions liquid phase sintered at 900 C for 20 minutes with PbGeO3 derived from (PbO)(GeO2); Pb5Ge301' derived from (Pb0)5(GeO2)3; Pb5Ge2SiO11 derived from (PbO)5(GeO2)2Si02; and Pb5GeSi2O11 derived from (PbO)5(GeO2)(SiO2)2.
The data illustrate that ceramic compositions with excellent electrical properties can be obtained by liquid phase sintering with various lead germanate compositions and various lead germanate-silicate compositions.
Although this invention has been disclosed with particular reference to certain preferred embodiments thereof, it is understood that variations and modifications can be effected within the spirit and scope of the appended claims. It is intended that all matter contained in the above description and tables or shown in the accompanying drawings shall be interpreted in an illustrative and not in a limiting sense.
TABLE II Dielectric Measurements on Liquid Phase Sintered BaTiO3 (1 micron) + 10 Vol. % Pb5Ge3O11 ts = 5 min.
Ts = 850 C Ts = 900 C Ts = 950 C Ts = 1000 C Ts = 1050 C T( C) K' tan # K' tan # K' tan # K' tan # K' tan # 25 868 0.0125 963 0.012 1210 0.012 1315 0.021 1430 0.024 60 840 0.0085 945 0.009 1180 0.010 1310 0.016 1428 0.0175 70 858 0.009 - - 1176 0.009 1300 0.015 - 80 867 0.010 - - 1205 0.009 - - 1425 0.015 90 875 0.011 986 0.01 1248 0.009 - - 1478 0.014 100 881 0.011 1031 0.0103 1302 0.009 1367 0.014 1575 0.015 110 940 0.012 1114 0.0120 1387 0.0096 1475 0.014 1775 0.015 120 983 0.0135 1157 0.0135 1440 0.0095 1566 0.015 1830 0.0143 130 930 0.016 1075 0.015 1319 0.009 1480 0.016 1682 0.013 140 858 0.018 983 0.015 1193 0.010 1350 0.013 1500 0.013 160 738 0.023 837 0.017 1000 0.012 1130 0.018 1240 0.013 TABLE III Dielectric Measurements on Liquid Phase Sintered BaTiO3 Ts = 900 C. ts = 20 min.
BaTiO3 + BaTiO3 + BaTiO3 + BaTiO3 + 10 Wt. % PbGeO3 10 Wt. % Pt5Ge3O11 10 Wt. % Pb5Ge2SiO11 10 Wt. % Pb5GeSi2O11 T( C) K' tan # K' tan # K' tan # K' tan # 25 1068 1.8 1075 2.0 903 1.7 907 1.6 40 - - 1092 1.9 910 1.6 904 1.3 60 1075 1.7 1124 2.1 924 1.6 928 1.3 80 1080 1.4 1167 2.3 954 1.7 950 1.3 100 1135 1.4 1215 2.2 1034 1.7 1015 1.4 120 1312 1.4 1422 2.1 1105 1.4 1095 1.3 140 1150 1.2 1300 2.3 1067 1.5 1092 1.2 160 - - 1085 2.3 978 1.6 920 1.4

Claims (4)

1. A heterophasic ceramic composition comprising a major amount of barium titanate and a minor amount of a lead germanate composition having the formula (PbO)xlGeO2)y-z(sio2)z where 1 < xA6, y ranges from 1 to 3, and z ranges from 0.0 to 0.75y, the ceramic composition being characterized in that densification is effected by liquid phase sintering to yield the heterophasic structure in which the lead germanate composition provides a continuous intergranular phase which separates the barium titanate phase into discrete localized volumes, with the proviso that when said heterophasic ceramic composition comprises from 1 to 33 volume percent of said lead germanate composition and x is 5 and y is 3, z is other than zero.
2. A composition according to Claim 1 comprising a major amount of barium titanate and from about 1 to about 33 volume % of the lead germanate composition, wherein the liquid phase sintering is effected at a temperature in the range of from about 750 to about 10500 C.
3. A composition according to Claim 1 and substantially as hereinbefore described.
4. A high dielectric constant ceramic capacitor comprising a heterophasic dielectric ceramic body formed of a heterophasic ceramic body formed of a heterophasic ceramic composition as claimed in any preceding claim and electrode metal.
GB7920788A 1979-03-26 1979-06-14 Heterophasic ceramic composition Expired GB2044749B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/024,099 US4218723A (en) 1977-11-01 1979-03-26 Heterophasic ceramic composition

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GB2044749A true GB2044749A (en) 1980-10-22
GB2044749B GB2044749B (en) 1982-12-22

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1578179A2 (en) * 2004-03-16 2005-09-21 E.I. du Pont de Nemours and Company Thick-film dielectric and conductive compositions
US7531416B2 (en) 2005-12-21 2009-05-12 E. I. Du Pont De Nemours And Company Thick film capacitors on ceramic interconnect substrates
US7688569B2 (en) 2004-03-16 2010-03-30 E. I. Du Pont De Nemours And Company Thick-film dielectric and conductive compositions

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1578179A2 (en) * 2004-03-16 2005-09-21 E.I. du Pont de Nemours and Company Thick-film dielectric and conductive compositions
EP1578179A3 (en) * 2004-03-16 2006-05-03 E.I. du Pont de Nemours and Company Thick-film dielectric and conductive compositions
US7688569B2 (en) 2004-03-16 2010-03-30 E. I. Du Pont De Nemours And Company Thick-film dielectric and conductive compositions
US7531416B2 (en) 2005-12-21 2009-05-12 E. I. Du Pont De Nemours And Company Thick film capacitors on ceramic interconnect substrates

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Publication number Publication date
GB2044749B (en) 1982-12-22
DE2923981A1 (en) 1980-10-09

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