GB202212798D0 - A novel transistor device - Google Patents

A novel transistor device

Info

Publication number
GB202212798D0
GB202212798D0 GBGB2212798.9A GB202212798A GB202212798D0 GB 202212798 D0 GB202212798 D0 GB 202212798D0 GB 202212798 A GB202212798 A GB 202212798A GB 202212798 D0 GB202212798 D0 GB 202212798D0
Authority
GB
United Kingdom
Prior art keywords
transistor device
novel transistor
novel
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
GBGB2212798.9A
Other versions
GB2622086A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Search For the Next Ltd
Original Assignee
Search For the Next Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Search For the Next Ltd filed Critical Search For the Next Ltd
Priority to GB2212798.9A priority Critical patent/GB2622086A/en
Publication of GB202212798D0 publication Critical patent/GB202212798D0/en
Priority to TW112131867A priority patent/TW202412260A/en
Priority to PCT/GB2023/052252 priority patent/WO2024047353A1/en
Publication of GB2622086A publication Critical patent/GB2622086A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H01L29/66295—Silicon vertical transistors with main current going through the whole silicon substrate, e.g. power bipolar transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB2212798.9A 2022-09-02 2022-09-02 A novel transistor device Pending GB2622086A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB2212798.9A GB2622086A (en) 2022-09-02 2022-09-02 A novel transistor device
TW112131867A TW202412260A (en) 2022-09-02 2023-08-24 A novel transistor device
PCT/GB2023/052252 WO2024047353A1 (en) 2022-09-02 2023-08-31 A novel transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2212798.9A GB2622086A (en) 2022-09-02 2022-09-02 A novel transistor device

Publications (2)

Publication Number Publication Date
GB202212798D0 true GB202212798D0 (en) 2022-10-19
GB2622086A GB2622086A (en) 2024-03-06

Family

ID=83933302

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2212798.9A Pending GB2622086A (en) 2022-09-02 2022-09-02 A novel transistor device

Country Status (3)

Country Link
GB (1) GB2622086A (en)
TW (1) TW202412260A (en)
WO (1) WO2024047353A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction
JPS5598871A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor
IT1202313B (en) * 1985-09-26 1989-02-02 Sgs Microelettronica Spa SEMICONDUCTOR POWER DEVICE, NORMALLY INTERDICTED FOR HIGH VOLTAGES AND WITH MODULATED RON
KR19990006170A (en) * 1997-06-30 1999-01-25 κΉ€μ˜ν™˜ Horizontal bipolar field effect transistor and method of manufacturing same
WO2022123261A1 (en) * 2020-12-09 2022-06-16 Search For The Next Ltd A transistor device

Also Published As

Publication number Publication date
TW202412260A (en) 2024-03-16
GB2622086A (en) 2024-03-06
WO2024047353A1 (en) 2024-03-07

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