GB202108180D0 - Glass frit compositions for semiconductor passivation applications - Google Patents

Glass frit compositions for semiconductor passivation applications

Info

Publication number
GB202108180D0
GB202108180D0 GBGB2108180.7A GB202108180A GB202108180D0 GB 202108180 D0 GB202108180 D0 GB 202108180D0 GB 202108180 A GB202108180 A GB 202108180A GB 202108180 D0 GB202108180 D0 GB 202108180D0
Authority
GB
United Kingdom
Prior art keywords
glass frit
frit compositions
semiconductor passivation
passivation applications
applications
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB2108180.7A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fenzi AGT Netherlands BV
Original Assignee
Johnson Matthey Advanced Glass Technologies BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johnson Matthey Advanced Glass Technologies BV filed Critical Johnson Matthey Advanced Glass Technologies BV
Priority to GBGB2108180.7A priority Critical patent/GB202108180D0/en
Publication of GB202108180D0 publication Critical patent/GB202108180D0/en
Priority to PCT/NL2022/050276 priority patent/WO2022260509A1/en
Priority to TW111121234A priority patent/TW202313508A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
GBGB2108180.7A 2021-06-08 2021-06-08 Glass frit compositions for semiconductor passivation applications Ceased GB202108180D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB2108180.7A GB202108180D0 (en) 2021-06-08 2021-06-08 Glass frit compositions for semiconductor passivation applications
PCT/NL2022/050276 WO2022260509A1 (en) 2021-06-08 2022-05-20 Glass frit compositions for semiconductor passivation applications
TW111121234A TW202313508A (en) 2021-06-08 2022-06-08 Glass frit compositions for semiconductor passivation applications

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB2108180.7A GB202108180D0 (en) 2021-06-08 2021-06-08 Glass frit compositions for semiconductor passivation applications

Publications (1)

Publication Number Publication Date
GB202108180D0 true GB202108180D0 (en) 2021-07-21

Family

ID=76838838

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB2108180.7A Ceased GB202108180D0 (en) 2021-06-08 2021-06-08 Glass frit compositions for semiconductor passivation applications

Country Status (3)

Country Link
GB (1) GB202108180D0 (en)
TW (1) TW202313508A (en)
WO (1) WO2022260509A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018026402A1 (en) 2016-08-03 2018-02-08 Ferro Corporation Passivation glasses for semiconductor devices

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140261662A1 (en) * 2013-03-18 2014-09-18 E I Du Pont De Nemours And Company Method of manufacturing a solar cell electrode
US10784383B2 (en) * 2015-08-07 2020-09-22 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
RU2701611C1 (en) * 2017-11-07 2019-09-30 Ферро Корпорэйшн Dielectric composition with low k for applications at high frequencies
GB201910100D0 (en) * 2019-07-15 2019-08-28 Johnson Matthey Plc Composition, paste and methods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018026402A1 (en) 2016-08-03 2018-02-08 Ferro Corporation Passivation glasses for semiconductor devices

Also Published As

Publication number Publication date
TW202313508A (en) 2023-04-01
WO2022260509A1 (en) 2022-12-15

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)
AT Applications terminated before publication under section 16(1)