GB202010749D0 - Single crystal metal layers, methods of production and uses thereof - Google Patents
Single crystal metal layers, methods of production and uses thereofInfo
- Publication number
- GB202010749D0 GB202010749D0 GBGB2010749.6A GB202010749A GB202010749D0 GB 202010749 D0 GB202010749 D0 GB 202010749D0 GB 202010749 A GB202010749 A GB 202010749A GB 202010749 D0 GB202010749 D0 GB 202010749D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- production
- methods
- single crystal
- metal layers
- crystal metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB2010749.6A GB202010749D0 (en) | 2020-07-13 | 2020-07-13 | Single crystal metal layers, methods of production and uses thereof |
PCT/EP2021/069223 WO2022013111A1 (en) | 2020-07-13 | 2021-07-09 | Single crystal metal layers, methods of production and uses thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB2010749.6A GB202010749D0 (en) | 2020-07-13 | 2020-07-13 | Single crystal metal layers, methods of production and uses thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
GB202010749D0 true GB202010749D0 (en) | 2020-08-26 |
Family
ID=72140021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GBGB2010749.6A Ceased GB202010749D0 (en) | 2020-07-13 | 2020-07-13 | Single crystal metal layers, methods of production and uses thereof |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB202010749D0 (en) |
WO (1) | WO2022013111A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115287757A (en) * | 2022-07-08 | 2022-11-04 | 中国科学院电工研究所 | Preparation method of copper single crystal wafer and single crystal graphene |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3664191A (en) | 1970-06-01 | 1972-05-23 | Fischer & Porter Co | Explosion-proof self-cleaning electrodes |
US4325776A (en) | 1977-06-20 | 1982-04-20 | Siemens Aktiengesellschaft | Method for preparing coarse-crystal or single-crystal metal films |
US5443032A (en) | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
EP1349204A3 (en) * | 2002-02-28 | 2007-05-02 | Interuniversitair Microelektronica Centrum ( Imec) | A method for producing a device having a semiconductor layer on a lattice mismatched substrate |
-
2020
- 2020-07-13 GB GBGB2010749.6A patent/GB202010749D0/en not_active Ceased
-
2021
- 2021-07-09 WO PCT/EP2021/069223 patent/WO2022013111A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2022013111A1 (en) | 2022-01-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
AT | Applications terminated before publication under section 16(1) |