GB201811005D0 - A level shifter - Google Patents
A level shifterInfo
- Publication number
- GB201811005D0 GB201811005D0 GBGB1811005.6A GB201811005A GB201811005D0 GB 201811005 D0 GB201811005 D0 GB 201811005D0 GB 201811005 A GB201811005 A GB 201811005A GB 201811005 D0 GB201811005 D0 GB 201811005D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- level shifter
- shifter
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
- H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0021—Modifications of threshold
- H03K19/0027—Modifications of threshold in field effect transistor circuits
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1811005.6A GB2575439A (en) | 2018-07-04 | 2018-07-04 | A level shifter |
PCT/EP2019/067993 WO2020007979A1 (en) | 2018-07-04 | 2019-07-04 | A level shifter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1811005.6A GB2575439A (en) | 2018-07-04 | 2018-07-04 | A level shifter |
Publications (3)
Publication Number | Publication Date |
---|---|
GB201811005D0 true GB201811005D0 (en) | 2018-08-15 |
GB2575439A GB2575439A (en) | 2020-01-15 |
GB2575439A9 GB2575439A9 (en) | 2020-11-25 |
Family
ID=63143580
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1811005.6A Withdrawn GB2575439A (en) | 2018-07-04 | 2018-07-04 | A level shifter |
Country Status (2)
Country | Link |
---|---|
GB (1) | GB2575439A (en) |
WO (1) | WO2020007979A1 (en) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3916430A (en) * | 1973-03-14 | 1975-10-28 | Rca Corp | System for eliminating substrate bias effect in field effect transistor circuits |
US4039869A (en) * | 1975-11-28 | 1977-08-02 | Rca Corporation | Protection circuit |
US7129751B2 (en) * | 2004-06-28 | 2006-10-31 | Intel Corporation | Low-leakage level shifter with integrated firewall and method |
US7205820B1 (en) * | 2004-07-08 | 2007-04-17 | Pmc-Sierra, Inc. | Systems and methods for translation of signal levels across voltage domains |
US9608604B2 (en) * | 2006-12-14 | 2017-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Voltage level shifter with single well voltage |
JP5816407B2 (en) * | 2009-02-27 | 2015-11-18 | ルネサスエレクトロニクス株式会社 | Semiconductor integrated circuit device |
-
2018
- 2018-07-04 GB GB1811005.6A patent/GB2575439A/en not_active Withdrawn
-
2019
- 2019-07-04 WO PCT/EP2019/067993 patent/WO2020007979A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2020007979A1 (en) | 2020-01-09 |
GB2575439A9 (en) | 2020-11-25 |
GB2575439A (en) | 2020-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) |
Free format text: REGISTERED BETWEEN 20201231 AND 20210106 |
|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |