GB201419981D0 - A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method - Google Patents

A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method

Info

Publication number
GB201419981D0
GB201419981D0 GBGB1419981.4A GB201419981A GB201419981D0 GB 201419981 D0 GB201419981 D0 GB 201419981D0 GB 201419981 A GB201419981 A GB 201419981A GB 201419981 D0 GB201419981 D0 GB 201419981D0
Authority
GB
United Kingdom
Prior art keywords
single crystal
synthetic diamond
crystal synthetic
diamond products
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB1419981.4A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Element Six Technologies Ltd
Original Assignee
Element Six Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Element Six Technologies Ltd filed Critical Element Six Technologies Ltd
Priority to GBGB1419981.4A priority Critical patent/GB201419981D0/en
Publication of GB201419981D0 publication Critical patent/GB201419981D0/en
Priority to GB1519320.4A priority patent/GB2535572B/en
Priority to PCT/EP2015/075438 priority patent/WO2016074965A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
    • C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
GBGB1419981.4A 2014-11-10 2014-11-10 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method Ceased GB201419981D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB1419981.4A GB201419981D0 (en) 2014-11-10 2014-11-10 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method
GB1519320.4A GB2535572B (en) 2014-11-10 2015-11-02 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method
PCT/EP2015/075438 WO2016074965A1 (en) 2014-11-10 2015-11-02 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB1419981.4A GB201419981D0 (en) 2014-11-10 2014-11-10 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method

Publications (1)

Publication Number Publication Date
GB201419981D0 true GB201419981D0 (en) 2014-12-24

Family

ID=52118262

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB1419981.4A Ceased GB201419981D0 (en) 2014-11-10 2014-11-10 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method
GB1519320.4A Active GB2535572B (en) 2014-11-10 2015-11-02 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB1519320.4A Active GB2535572B (en) 2014-11-10 2015-11-02 A method of fabricating single crystal synthetic diamond products and single crystal synthetic diamond products fabricated using said method

Country Status (2)

Country Link
GB (2) GB201419981D0 (en)
WO (1) WO2016074965A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7232186B2 (en) * 2017-09-19 2023-03-02 住友電気工業株式会社 SINGLE CRYSTAL DIAMOND AND PRODUCTION METHOD THEREOF

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0865065B1 (en) * 1997-03-10 2003-09-03 Sumitomo Electric Industries, Ltd. Electron-emitting element, method of making the same, and electronic device
US9277792B2 (en) * 2010-08-24 2016-03-08 Board Of Trustees Of Michigan State University Multicolored single crystal diamond gemstones and methods for forming the same
GB201021985D0 (en) * 2010-12-24 2011-02-02 Element Six Ltd Dislocation engineering in single crystal synthetic diamond material

Also Published As

Publication number Publication date
WO2016074965A1 (en) 2016-05-19
GB201519320D0 (en) 2015-12-16
GB2535572B (en) 2018-01-10
GB2535572A (en) 2016-08-24

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)