GB201211278D0 - Memristor and method of manufacture thereof - Google Patents

Memristor and method of manufacture thereof

Info

Publication number
GB201211278D0
GB201211278D0 GBGB1211278.5A GB201211278A GB201211278D0 GB 201211278 D0 GB201211278 D0 GB 201211278D0 GB 201211278 A GB201211278 A GB 201211278A GB 201211278 D0 GB201211278 D0 GB 201211278D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
layers
memristor
pcbs
nanowires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB1211278.5A
Other versions
GB2503290A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Swansea University
Original Assignee
Swansea University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Swansea University filed Critical Swansea University
Priority to GB1211278.5A priority Critical patent/GB2503290A/en
Publication of GB201211278D0 publication Critical patent/GB201211278D0/en
Publication of GB2503290A publication Critical patent/GB2503290A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Memories (AREA)

Abstract

A memristor formed of two layers 2A and 2B having conductive areas 3 on those layers. There are nanowires 5A and 5B comprising for example zinc oxide extending from tracks 3 on each of the layers 2A and 2B, which typically are PCBs. The incorporation of nanowires with the PCBs may allow for the manufacture of small scale devices very efficiently.
GB1211278.5A 2012-06-22 2012-06-22 Memristor and method of manufacture thereof Withdrawn GB2503290A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1211278.5A GB2503290A (en) 2012-06-22 2012-06-22 Memristor and method of manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1211278.5A GB2503290A (en) 2012-06-22 2012-06-22 Memristor and method of manufacture thereof

Publications (2)

Publication Number Publication Date
GB201211278D0 true GB201211278D0 (en) 2012-08-08
GB2503290A GB2503290A (en) 2013-12-25

Family

ID=46704198

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1211278.5A Withdrawn GB2503290A (en) 2012-06-22 2012-06-22 Memristor and method of manufacture thereof

Country Status (1)

Country Link
GB (1) GB2503290A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2582232C1 (en) * 2015-02-11 2016-04-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Иркутский государственный университет" Memristor material
CN108281548B (en) * 2018-02-07 2019-09-03 中南大学 A kind of bipolarity bistable state memristor and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110227022A1 (en) * 2009-01-15 2011-09-22 Cho Hans S Memristor Having a Nanostructure Forming An Active Region
US8207593B2 (en) * 2009-07-28 2012-06-26 Hewlett-Packard Development Company, L.P. Memristor having a nanostructure in the switching material

Also Published As

Publication number Publication date
GB2503290A (en) 2013-12-25

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)