GB201013236D0 - A photon detector - Google Patents

A photon detector

Info

Publication number
GB201013236D0
GB201013236D0 GBGB1013236.3A GB201013236A GB201013236D0 GB 201013236 D0 GB201013236 D0 GB 201013236D0 GB 201013236 A GB201013236 A GB 201013236A GB 201013236 D0 GB201013236 D0 GB 201013236D0
Authority
GB
United Kingdom
Prior art keywords
photon detector
photon
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB1013236.3A
Other versions
GB2469961A (en
GB2469961B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Research Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Research Europe Ltd filed Critical Toshiba Research Europe Ltd
Priority to GB1013236A priority Critical patent/GB2469961B/en
Publication of GB201013236D0 publication Critical patent/GB201013236D0/en
Publication of GB2469961A publication Critical patent/GB2469961A/en
Application granted granted Critical
Publication of GB2469961B publication Critical patent/GB2469961B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
GB1013236A 2007-02-27 2007-02-27 A photon detector Active GB2469961B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1013236A GB2469961B (en) 2007-02-27 2007-02-27 A photon detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0703848A GB2447054B (en) 2007-02-27 2007-02-27 A photon detector
GB1013236A GB2469961B (en) 2007-02-27 2007-02-27 A photon detector

Publications (3)

Publication Number Publication Date
GB201013236D0 true GB201013236D0 (en) 2010-09-22
GB2469961A GB2469961A (en) 2010-11-03
GB2469961B GB2469961B (en) 2011-05-18

Family

ID=37965639

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1013236A Active GB2469961B (en) 2007-02-27 2007-02-27 A photon detector
GB0703848A Active GB2447054B (en) 2007-02-27 2007-02-27 A photon detector

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB0703848A Active GB2447054B (en) 2007-02-27 2007-02-27 A photon detector

Country Status (2)

Country Link
GB (2) GB2469961B (en)
WO (1) WO2008104761A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2485400B (en) 2010-11-12 2014-12-10 Toshiba Res Europ Ltd Photon detector
JP5870721B2 (en) * 2012-02-02 2016-03-01 富士通株式会社 Photodetection semiconductor device
CN104409506B (en) * 2014-11-27 2017-10-17 京东方科技集团股份有限公司 Quantum dot field-effect transistor and preparation method, array base palte and detection means
AU2017205654B9 (en) 2016-01-07 2021-12-09 The Research Foundation For The State University Of New York Selenium photomultiplier and method for fabrication thereof
CN110459471B (en) * 2019-07-25 2020-09-04 中山大学 Preparation method of GaN-based pH sensor with double-gate structure

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9916182D0 (en) * 1999-07-10 1999-09-08 Toshiba Res Europ Ltd Photon detector
US6720589B1 (en) * 1998-09-16 2004-04-13 Kabushiki Kaisha Toshiba Semiconductor device
JP2006005312A (en) * 2004-06-21 2006-01-05 Nippon Hoso Kyokai <Nhk> Optical sensor and solid-state imaging apparatus

Also Published As

Publication number Publication date
WO2008104761A3 (en) 2009-01-15
GB2469961A (en) 2010-11-03
GB2447054A (en) 2008-09-03
GB0703848D0 (en) 2007-04-11
GB2447054B (en) 2011-05-18
GB2469961B (en) 2011-05-18
WO2008104761A2 (en) 2008-09-04

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