GB1573473A - Semiconductor liquid junction photocell - Google Patents
Semiconductor liquid junction photocell Download PDFInfo
- Publication number
- GB1573473A GB1573473A GB6148/78A GB614878A GB1573473A GB 1573473 A GB1573473 A GB 1573473A GB 6148/78 A GB6148/78 A GB 6148/78A GB 614878 A GB614878 A GB 614878A GB 1573473 A GB1573473 A GB 1573473A
- Authority
- GB
- United Kingdom
- Prior art keywords
- gaas
- cell
- photocell
- approximately
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 239000007788 liquid Substances 0.000 title description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 35
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000003792 electrolyte Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000011669 selenium Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 238000005260 corrosion Methods 0.000 claims description 11
- 230000007797 corrosion Effects 0.000 claims description 11
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 229910052711 selenium Inorganic materials 0.000 claims description 9
- 150000003346 selenoethers Chemical class 0.000 claims description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052714 tellurium Inorganic materials 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000011244 liquid electrolyte Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical group CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 3
- 230000004580 weight loss Effects 0.000 claims description 3
- 150000001450 anions Chemical class 0.000 claims description 2
- 239000000969 carrier Substances 0.000 claims description 2
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 239000003574 free electron Substances 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims description 2
- 238000005215 recombination Methods 0.000 claims description 2
- 230000006798 recombination Effects 0.000 claims description 2
- 230000001172 regenerating effect Effects 0.000 claims description 2
- 230000001629 suppression Effects 0.000 claims description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- -1 Diselenide ion Chemical class 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011255 nonaqueous electrolyte Substances 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
- Hybrid Cells (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76995177A | 1977-02-18 | 1977-02-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1573473A true GB1573473A (en) | 1980-08-28 |
Family
ID=25087016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB6148/78A Expired GB1573473A (en) | 1977-02-18 | 1978-02-16 | Semiconductor liquid junction photocell |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS53124095A (ja) |
| BE (1) | BE864055A (ja) |
| CA (1) | CA1106484A (ja) |
| DE (1) | DE2806881A1 (ja) |
| FR (1) | FR2381391A1 (ja) |
| GB (1) | GB1573473A (ja) |
| IL (1) | IL54030A (ja) |
| IT (1) | IT1093111B (ja) |
| NL (1) | NL7801774A (ja) |
-
1978
- 1978-02-01 CA CA296,008A patent/CA1106484A/en not_active Expired
- 1978-02-13 FR FR7803997A patent/FR2381391A1/fr active Granted
- 1978-02-13 IL IL54030A patent/IL54030A/xx unknown
- 1978-02-16 IT IT20328/78A patent/IT1093111B/it active
- 1978-02-16 GB GB6148/78A patent/GB1573473A/en not_active Expired
- 1978-02-16 NL NL7801774A patent/NL7801774A/xx not_active Application Discontinuation
- 1978-02-17 BE BE185248A patent/BE864055A/xx not_active IP Right Cessation
- 1978-02-17 JP JP1667378A patent/JPS53124095A/ja active Pending
- 1978-02-17 DE DE19782806881 patent/DE2806881A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2381391A1 (fr) | 1978-09-15 |
| IT1093111B (it) | 1985-07-19 |
| IL54030A0 (en) | 1978-04-30 |
| NL7801774A (nl) | 1978-08-22 |
| BE864055A (fr) | 1978-06-16 |
| CA1106484A (en) | 1981-08-04 |
| IT7820328A0 (it) | 1978-02-16 |
| IL54030A (en) | 1980-06-30 |
| DE2806881A1 (de) | 1978-08-24 |
| FR2381391B1 (ja) | 1982-12-31 |
| JPS53124095A (en) | 1978-10-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Peter | The photoelectrochemical properties of anodic Bi2S3 films | |
| Ghosh et al. | Photoelectrolysis of water in sunlight with sensitized semiconductor electrodes | |
| US4400244A (en) | Photo-voltaic power generating means and methods | |
| US4656103A (en) | Liquid junction photoelectrodes using amorphous silicon-based thin film semiconductor | |
| US4626322A (en) | Photoelectrochemical preparation of a solid-state semiconductor photonic device | |
| CN113372914B (zh) | 一种铜掺杂磷化铟硒化锌量子点材料及其制备方法和光电化学电池 | |
| US4084044A (en) | Liquid-semiconductor photocell using sintered electrode | |
| Tsubomura et al. | Solar cells | |
| US4425194A (en) | Photo-voltaic power generating means and methods | |
| CN112133774A (zh) | 一种背结背接触太阳能电池及其制作方法 | |
| Takahashi et al. | Electrochemical deposition, optical properties, and photoelectrochemical behavior of CdTe films | |
| Gronet et al. | n‐type GaAs photoanodes in acetonitrile: Design of a 10.0% efficient photoelectrode | |
| US4182796A (en) | Semiconductor liquid junction photocell using surface modified GaAs electrode | |
| CA1237510A (en) | Liquid junction photoelectrodes using amorphous silicon-based thin film semiconductor | |
| Nakato et al. | Efficient photoelectrochemical conversion of solar energy with N-type silicon semiconductor electrodes surface-doped with IIIA-Group elements | |
| Neumann‐Spallart et al. | Photoelectrochemical properties of semiconducting cadmium mercury telluride thin films with bandgaps between 1.47 and 1.08 eV | |
| Wrighton | Thermodynamics and kinetics associated with semiconductor-based photoelectrochemical cells for the conversion of light to chemical energy | |
| US4343870A (en) | Semiconductor liquid junction photocell having a P-type photoactive electrode | |
| US4439301A (en) | Photoelectrochemical cells including chalcogenophosphate photoelectrodes | |
| Ang et al. | Photoelectrochemical systems with energy storage | |
| GB1573473A (en) | Semiconductor liquid junction photocell | |
| WO1994000887A1 (en) | Photoelectrochemical cell including nanocrystalline semiconductor layer | |
| US4180625A (en) | Semiconductor liquid junction photocell using a CuInS2 electrode | |
| CA1099808A (en) | Liquid-semiconductor junction photocell | |
| US4196263A (en) | Semiconductor devices with enhanced properties |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |