GB1542481A - Integrated circuit device - Google Patents

Integrated circuit device

Info

Publication number
GB1542481A
GB1542481A GB7637596A GB3759676A GB1542481A GB 1542481 A GB1542481 A GB 1542481A GB 7637596 A GB7637596 A GB 7637596A GB 3759676 A GB3759676 A GB 3759676A GB 1542481 A GB1542481 A GB 1542481A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
circuit device
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7637596A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1542481A publication Critical patent/GB1542481A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
GB7637596A 1975-09-12 1976-09-10 Integrated circuit device Expired GB1542481A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50109940A JPS5234680A (en) 1975-09-12 1975-09-12 Integrated circuit

Publications (1)

Publication Number Publication Date
GB1542481A true GB1542481A (en) 1979-03-21

Family

ID=14522956

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7637596A Expired GB1542481A (en) 1975-09-12 1976-09-10 Integrated circuit device

Country Status (2)

Country Link
JP (1) JPS5234680A (cg-RX-API-DMAC7.html)
GB (1) GB1542481A (cg-RX-API-DMAC7.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013482A3 (en) * 1978-12-27 1980-10-15 Fujitsu Limited Complementary metal-oxide semiconductor
EP0023791A1 (en) * 1979-07-24 1981-02-11 Fujitsu Limited CMOS semiconductor device
GB2158640A (en) * 1984-04-28 1985-11-13 Mitsubishi Electric Corp Integrated circuit
EP0198569A1 (en) * 1985-02-14 1986-10-22 Siliconix Limited Monolithic integrated circuits having protection against latch-up
EP0166386A3 (de) * 1984-06-29 1987-08-05 Siemens Aktiengesellschaft Integrierte Schaltung in komplementärer Schaltungstechnik

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0013482A3 (en) * 1978-12-27 1980-10-15 Fujitsu Limited Complementary metal-oxide semiconductor
EP0023791A1 (en) * 1979-07-24 1981-02-11 Fujitsu Limited CMOS semiconductor device
GB2158640A (en) * 1984-04-28 1985-11-13 Mitsubishi Electric Corp Integrated circuit
US4772930A (en) * 1984-04-28 1988-09-20 Mitsubishi Denki Kabushiki Kaisha Complementary metal oxide semiconductor integrated circuit with unequal reference voltages
EP0166386A3 (de) * 1984-06-29 1987-08-05 Siemens Aktiengesellschaft Integrierte Schaltung in komplementärer Schaltungstechnik
EP0198569A1 (en) * 1985-02-14 1986-10-22 Siliconix Limited Monolithic integrated circuits having protection against latch-up

Also Published As

Publication number Publication date
JPS5234680A (en) 1977-03-16
JPS617748B2 (cg-RX-API-DMAC7.html) 1986-03-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PE20 Patent expired after termination of 20 years

Effective date: 19960909