GB1539784A - Integrated circuit rectifier - Google Patents

Integrated circuit rectifier

Info

Publication number
GB1539784A
GB1539784A GB5415/76A GB541576A GB1539784A GB 1539784 A GB1539784 A GB 1539784A GB 5415/76 A GB5415/76 A GB 5415/76A GB 541576 A GB541576 A GB 541576A GB 1539784 A GB1539784 A GB 1539784A
Authority
GB
United Kingdom
Prior art keywords
integrated circuit
circuit rectifier
rectifier
integrated
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5415/76A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of GB1539784A publication Critical patent/GB1539784A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
GB5415/76A 1975-02-13 1976-02-11 Integrated circuit rectifier Expired GB1539784A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54961775A 1975-02-13 1975-02-13

Publications (1)

Publication Number Publication Date
GB1539784A true GB1539784A (en) 1979-02-07

Family

ID=24193753

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5415/76A Expired GB1539784A (en) 1975-02-13 1976-02-11 Integrated circuit rectifier

Country Status (2)

Country Link
FR (1) FR2301096A1 (enExample)
GB (1) GB1539784A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002056387A1 (de) * 2001-01-11 2002-07-18 Infineon Technologies Ag Schottky-diode

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2650439B1 (fr) * 1989-07-27 1991-11-15 Sgs Thomson Microelectronics Circuit integre vdmos/logique comprenant une diode

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564920B2 (de) * 1966-10-21 1971-12-30 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Halbleiteranordnung und verfahren zu seiner herstellung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002056387A1 (de) * 2001-01-11 2002-07-18 Infineon Technologies Ag Schottky-diode
US6885077B2 (en) 2001-01-11 2005-04-26 Infineon Technologies Ag Schottky diode

Also Published As

Publication number Publication date
FR2301096B1 (enExample) 1981-02-13
FR2301096A1 (fr) 1976-09-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee