GB1527060A - Capacitor dielectrics - Google Patents
Capacitor dielectricsInfo
- Publication number
- GB1527060A GB1527060A GB3229477A GB3229477A GB1527060A GB 1527060 A GB1527060 A GB 1527060A GB 3229477 A GB3229477 A GB 3229477A GB 3229477 A GB3229477 A GB 3229477A GB 1527060 A GB1527060 A GB 1527060A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- type dopant
- tio
- aug
- dopants
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 title abstract 2
- 239000003989 dielectric material Substances 0.000 title 1
- 239000002019 doping agent Substances 0.000 abstract 5
- 229910010413 TiO 2 Inorganic materials 0.000 abstract 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 abstract 2
- 229910002113 barium titanate Inorganic materials 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000000654 additive Substances 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052746 lanthanum Inorganic materials 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052758 niobium Inorganic materials 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910052726 zirconium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Capacitors (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Laminated Bodies (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
1527060 Barium titanate compositions SIEMENS AG 2 Aug 1977 [3 Aug 1976] 32294/77 Heading C1J [Also in Division H1] A capacitor dielectric comprises a barium titanate with a 1À005 to 1À05 stoichiometric excess of TiO 2 , Ba being partially replaceable by Ca, Sr, Pb, or Mg and Ti by Zr or Sn, the composition containing additives imparting p-type and n-type conductivity, the amount of n-type dopant being greater by a factor of 1À5 to 2À5 than the maximal doping quantity and the amount of p-type dopant being 0À01 to 0À15% by weight. The dielectric comprises n-conductive crystallites, separated by a TiO 2 -rich intermediate phase wherein the concentration of p-type dopant is greatest at the boundary with the crystallites. This structure is achieved by controlling the sintering conditions. The p-type dopants may be Cu, Co, Ni, Fe or Mn and the ntype dopants Sb, Nb, La, or Bi.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762634896 DE2634896C2 (en) | 1976-08-03 | 1976-08-03 | Capacitor dielectric with internal barrier layers and process for its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1527060A true GB1527060A (en) | 1978-10-04 |
Family
ID=5984626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3229477A Expired GB1527060A (en) | 1976-08-03 | 1977-08-02 | Capacitor dielectrics |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5317961A (en) |
| AT (1) | AT357240B (en) |
| DE (1) | DE2634896C2 (en) |
| FR (1) | FR2360997A1 (en) |
| GB (1) | GB1527060A (en) |
| IT (1) | IT1082238B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0043157A1 (en) * | 1980-06-30 | 1982-01-06 | Centralab Inc. | Ceramic dielectric for base metal electrode capacitors and method of manufacture |
| US4483933A (en) * | 1981-03-24 | 1984-11-20 | Murata Manufacturing Co., Ltd. | Semiconductor ceramic composition |
| WO1988008830A1 (en) * | 1986-11-03 | 1988-11-17 | Dean Terence C | Dielectric ceramic with high k, low df and flat tc |
| US4882305A (en) * | 1985-05-03 | 1989-11-21 | Tam Ceramics, Inc. | Dielectric ceramic composition with high dielectric constant and flat TC characteristics |
| US4939108A (en) * | 1986-11-03 | 1990-07-03 | Tam Ceramics, Inc. | Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics |
| US5084426A (en) * | 1988-07-14 | 1992-01-28 | Tdk Corporation | Semiconductive ceramic composition |
| GB2219287B (en) * | 1988-06-03 | 1992-09-09 | Nippon Oils & Fats Co Ltd | A method for manufacturing a reduction-reoxidation type semiconductive capacitor |
| US5550092A (en) * | 1995-02-10 | 1996-08-27 | Tam Ceramics Inc. | Ceramic dielectrics compositions |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59125B2 (en) * | 1978-10-20 | 1984-01-05 | ティーディーケイ株式会社 | Nonlinear dielectric element |
| JPS57167617A (en) * | 1981-04-08 | 1982-10-15 | Murata Manufacturing Co | Grain boundary insulating type semiconductor porcelain composition |
| JPS57167618A (en) * | 1981-04-08 | 1982-10-15 | Murata Manufacturing Co | Grain boundary insulating type semiconductor porcelain composition |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2277733A (en) * | 1939-04-27 | 1942-03-31 | Titanium Alloy Mfg Co | Dielectric material and method of making the same |
| DE1117766B (en) * | 1959-02-21 | 1961-11-23 | Rosenthal Isolatoren Ges Mit B | Ceramic capacitor dielectric with high dielectric constant and low temperature dependence |
| FR1279571A (en) * | 1960-04-29 | 1961-12-22 | Siemens Ag | Ceramic barrier capacitor and method of manufacture |
| NL135251C (en) * | 1963-02-22 | |||
| DE1646987C3 (en) * | 1965-03-19 | 1974-01-17 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Process for the production of polycrystalline disk-shaped, rod-shaped or foil-shaped ceramic PTC thermistors or dielectric or thermistor bodies |
| DE1646988B2 (en) * | 1965-03-19 | 1973-06-14 | Siemens AG, 1000 Berlin u 8000 München | PROCESS FOR MANUFACTURING POLYCRYSTALLINE DISC, ROD TUBE, OR FOIL-SHAPED CERAMIC COLD CONDUCTORS OR. DIELECTRIC AND HOT CONDUCTOR BODY |
| GB1186116A (en) * | 1966-12-19 | 1970-04-02 | Nippon Telegraph & Telephone | Improvements in or relating to the Production of High Dielectric Ceramics |
| DE1614605B2 (en) * | 1967-09-20 | 1974-06-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Capacitor dielectric with inner barrier layers and less temperature dependence |
-
1976
- 1976-08-03 DE DE19762634896 patent/DE2634896C2/en not_active Expired
-
1977
- 1977-07-20 AT AT527077A patent/AT357240B/en not_active IP Right Cessation
- 1977-07-27 IT IT2615677A patent/IT1082238B/en active
- 1977-08-02 GB GB3229477A patent/GB1527060A/en not_active Expired
- 1977-08-02 FR FR7723755A patent/FR2360997A1/en not_active Withdrawn
- 1977-08-03 JP JP9330477A patent/JPS5317961A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0043157A1 (en) * | 1980-06-30 | 1982-01-06 | Centralab Inc. | Ceramic dielectric for base metal electrode capacitors and method of manufacture |
| US4483933A (en) * | 1981-03-24 | 1984-11-20 | Murata Manufacturing Co., Ltd. | Semiconductor ceramic composition |
| US4882305A (en) * | 1985-05-03 | 1989-11-21 | Tam Ceramics, Inc. | Dielectric ceramic composition with high dielectric constant and flat TC characteristics |
| WO1988008830A1 (en) * | 1986-11-03 | 1988-11-17 | Dean Terence C | Dielectric ceramic with high k, low df and flat tc |
| US4939108A (en) * | 1986-11-03 | 1990-07-03 | Tam Ceramics, Inc. | Process for producing dielectric ceramic composition with high dielectric constant, low dissipation factor and flat TC characteristics |
| GB2219287B (en) * | 1988-06-03 | 1992-09-09 | Nippon Oils & Fats Co Ltd | A method for manufacturing a reduction-reoxidation type semiconductive capacitor |
| US5084426A (en) * | 1988-07-14 | 1992-01-28 | Tdk Corporation | Semiconductive ceramic composition |
| US5550092A (en) * | 1995-02-10 | 1996-08-27 | Tam Ceramics Inc. | Ceramic dielectrics compositions |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2634896C2 (en) | 1985-08-14 |
| AT357240B (en) | 1980-06-25 |
| ATA527077A (en) | 1979-11-15 |
| IT1082238B (en) | 1985-05-21 |
| JPS5317961A (en) | 1978-02-18 |
| FR2360997A1 (en) | 1978-03-03 |
| DE2634896A1 (en) | 1978-02-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |