GB1518258A - Field effect transistor opto-coupler - Google Patents

Field effect transistor opto-coupler

Info

Publication number
GB1518258A
GB1518258A GB2156177A GB2156177A GB1518258A GB 1518258 A GB1518258 A GB 1518258A GB 2156177 A GB2156177 A GB 2156177A GB 2156177 A GB2156177 A GB 2156177A GB 1518258 A GB1518258 A GB 1518258A
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
coupler
opto
transistor opto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2156177A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siliconix Ltd
Original Assignee
Siliconix Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Ltd filed Critical Siliconix Ltd
Priority to GB2156177A priority Critical patent/GB1518258A/en
Publication of GB1518258A publication Critical patent/GB1518258A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optical Communication System (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

1518258 Optical couplers SILICOMX Ltd 20 May 1977 21561/77 Heading H1K A junction-gate field effect transistor is employed as the receiver of light from an LED in an optical coupler. The transistor parameter which responds to light from the LED is stated to be the gate leakage.
GB2156177A 1977-05-20 1977-05-20 Field effect transistor opto-coupler Expired GB1518258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB2156177A GB1518258A (en) 1977-05-20 1977-05-20 Field effect transistor opto-coupler

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2156177A GB1518258A (en) 1977-05-20 1977-05-20 Field effect transistor opto-coupler

Publications (1)

Publication Number Publication Date
GB1518258A true GB1518258A (en) 1978-07-19

Family

ID=10164983

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2156177A Expired GB1518258A (en) 1977-05-20 1977-05-20 Field effect transistor opto-coupler

Country Status (1)

Country Link
GB (1) GB1518258A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053028A1 (en) * 1980-11-24 1982-06-02 Canadian Patents and Development Limited Semiconductor switch
EP0094972A1 (en) * 1981-11-30 1983-11-30 Semiconductor Research Foundation Photocoupler

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0053028A1 (en) * 1980-11-24 1982-06-02 Canadian Patents and Development Limited Semiconductor switch
EP0094972A1 (en) * 1981-11-30 1983-11-30 Semiconductor Research Foundation Photocoupler
EP0094972A4 (en) * 1981-11-30 1984-06-13 Semiconductor Res Found Photocoupler.

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940520