GB1468578A - Microwave transistor circuit - Google Patents
Microwave transistor circuitInfo
- Publication number
- GB1468578A GB1468578A GB1812374A GB1812374A GB1468578A GB 1468578 A GB1468578 A GB 1468578A GB 1812374 A GB1812374 A GB 1812374A GB 1812374 A GB1812374 A GB 1812374A GB 1468578 A GB1468578 A GB 1468578A
- Authority
- GB
- United Kingdom
- Prior art keywords
- collector
- base
- region
- emitter
- input signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/54—Amplifiers using transit-time effect in tubes or semiconductor devices
- H03F3/55—Amplifiers using transit-time effect in tubes or semiconductor devices with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B9/00—Generation of oscillations using transit-time effects
- H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Amplifiers (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1812374A GB1468578A (en) | 1974-04-25 | 1974-04-25 | Microwave transistor circuit |
US05/553,351 US3946336A (en) | 1974-04-25 | 1975-02-26 | Microwave solid state circuit employing a bipolar transistor structure |
FR7512933A FR2269235B1 (US07321065-20080122-C00126.png) | 1974-04-25 | 1975-04-25 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1812374A GB1468578A (en) | 1974-04-25 | 1974-04-25 | Microwave transistor circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1468578A true GB1468578A (en) | 1977-03-30 |
Family
ID=10107058
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1812374A Expired GB1468578A (en) | 1974-04-25 | 1974-04-25 | Microwave transistor circuit |
Country Status (3)
Country | Link |
---|---|
US (1) | US3946336A (US07321065-20080122-C00126.png) |
FR (1) | FR2269235B1 (US07321065-20080122-C00126.png) |
GB (1) | GB1468578A (US07321065-20080122-C00126.png) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2305857A1 (fr) * | 1975-03-28 | 1976-10-22 | Thomson Csf | Dispositif hyperfrequence a semiconducteur, du type utilisant le temps de transit, et appareils generateurs ou amplificateurs utilisant ce dispositif |
FR2408221A1 (fr) * | 1977-10-04 | 1979-06-01 | Thomson Csf | Structure du type metal-germanium - arseniure de gallium et oscillateur utilisant une telle structure |
US4649405A (en) * | 1984-04-10 | 1987-03-10 | Cornell Research Foundation, Inc. | Electron ballistic injection and extraction for very high efficiency, high frequency transferred electron devices |
US4849718A (en) * | 1987-09-03 | 1989-07-18 | Raytheon Company | Circuitry and method for controlling IMPATT diode |
US5107229A (en) * | 1990-11-26 | 1992-04-21 | Lectronic Research Labs | Solid state oscillator for generating microwave signals |
US5304919A (en) * | 1992-06-12 | 1994-04-19 | The United States Of America As Represented By The Department Of Energy | Electronic constant current and current pulse signal generator for nuclear instrumentation testing |
JP3219005B2 (ja) * | 1996-08-13 | 2001-10-15 | 日本電気株式会社 | 負性抵抗増幅器 |
US6560452B1 (en) | 2000-11-27 | 2003-05-06 | Rf Micro Devices, Inc. | Oscillator having a transistor formed of a wide bandgap semiconductor material |
DE10136032A1 (de) * | 2001-07-25 | 2003-02-20 | Forschungsverbund Berlin Ev | Gunn-Effekt-Halbleiterbauelement wie ein Hetero-Bipolar-Transistor (HBT) zur frequenzvariablen Schwingungserzeugung |
RU2341851C1 (ru) * | 2007-05-08 | 2008-12-20 | Закрытое Акционерное Общество "Сем Технолоджи" | Устройство для регулирования физиологических процессов в биологическом объекте |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3531698A (en) * | 1968-05-21 | 1970-09-29 | Hewlett Packard Co | Current control in bulk negative conductance materials |
US3855605A (en) * | 1972-06-19 | 1974-12-17 | Rca Corp | Carrier injected avalanche device |
-
1974
- 1974-04-25 GB GB1812374A patent/GB1468578A/en not_active Expired
-
1975
- 1975-02-26 US US05/553,351 patent/US3946336A/en not_active Expired - Lifetime
- 1975-04-25 FR FR7512933A patent/FR2269235B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2269235B1 (US07321065-20080122-C00126.png) | 1978-10-13 |
FR2269235A1 (US07321065-20080122-C00126.png) | 1975-11-21 |
US3946336A (en) | 1976-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |