GB1416220A - Waveform producing device - Google Patents
Waveform producing deviceInfo
- Publication number
- GB1416220A GB1416220A GB4982773A GB4982773A GB1416220A GB 1416220 A GB1416220 A GB 1416220A GB 4982773 A GB4982773 A GB 4982773A GB 4982773 A GB4982773 A GB 4982773A GB 1416220 A GB1416220 A GB 1416220A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistors
- taps
- produced
- potentiometer
- column
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000009527 percussion Methods 0.000 abstract 1
- 238000010079 rubber tapping Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10H—ELECTROPHONIC MUSICAL INSTRUMENTS; INSTRUMENTS IN WHICH THE TONES ARE GENERATED BY ELECTROMECHANICAL MEANS OR ELECTRONIC GENERATORS, OR IN WHICH THE TONES ARE SYNTHESISED FROM A DATA STORE
- G10H7/00—Instruments in which the tones are synthesised from a data store, e.g. computer organs
- G10H7/02—Instruments in which the tones are synthesised from a data store, e.g. computer organs in which amplitudes at successive sample points of a tone waveform are stored in one or more memories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/06—Continuously compensating for, or preventing, undesired influence of physical parameters
- H03M1/0617—Continuously compensating for, or preventing, undesired influence of physical parameters characterised by the use of methods or means not specific to a particular type of detrimental influence
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrophonic Musical Instruments (AREA)
- Analogue/Digital Conversion (AREA)
Abstract
1416220 Digital-to-analogue conversion NIPPON GAKKI SEIZO KK 25 Oct 1973 [25 Oct 1972 (4)] 49827/73 Heading H3H [Also in Divisions H1 and G5] A waveform is produced by deriving a sequence of voltages from taps on a potentiometer formed as a diffused resistive layer on a semi-conductor substrate. The potentiometer may thus be small and the ratio between voltages at taps independent of variation of specific resistance from sample to sample. The arrangement described is for generation of tones or the envelopes of tones in electronic musical instruments. Fig. 1 shows an overall arrangement comprising a potentiometer formed on a semiconductor substrate by three resistive layers 2a, 2b, 2c, connected together at 11a, 11b and connected at tapping points to output connections P0 to P63 by vacuum formed aluminium stripes. The sequence of connection is controlled by a reading switch under the control of a digital-to-digital decoder. As shown the resistance between each tap is the same but by adding shunt resistors and by shorting together terminals in appropriate sections of the resistance layer exponential leading and trailing edges of the output waveform may be produced to provide desired attack and decay rates, e.g. for percussion sound (Figs. 9, 10, 16, 17 and 18 and 20, not shown). The circuit arrangement (Fig. 2) comprises a D-A converter controlled by a stepping circuit 21. From the output of the latter are produced erect and inverted signals j, j which are connected row-wise to the gates of MOS field-effect transistors having their collectors connected column-wise to switching transistors U0-U63 connected between the resistor taps and the output terminal, the transistors in each column serving to earth the gate of the associated transistor U and thus to by-pass the 16 V gate supply derived through load transistors L0- L63. The transistors U are formed in pairs (Fig. 3) having a common source region S and respective gate and drain regions G, D. The field effect transistor matrix (Fig. 5) is likewise formed having a common region S for two adjacent columns and respective gates and drains. Connection to the 16 V supply is effected via transistors L0-L63 at the foot of the column. The circuit is covered by an insulating layer.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10694772A JPS528179B2 (en) | 1972-10-25 | 1972-10-25 | |
JP10694872A JPS528180B2 (en) | 1972-10-25 | 1972-10-25 | |
JP10694572A JPS528177B2 (en) | 1972-10-25 | 1972-10-25 | |
JP47106946A JPS528178B2 (en) | 1972-10-25 | 1972-10-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1416220A true GB1416220A (en) | 1975-12-03 |
Family
ID=27469492
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4982773A Expired GB1416220A (en) | 1972-10-25 | 1973-10-25 | Waveform producing device |
Country Status (4)
Country | Link |
---|---|
US (1) | US3890602A (en) |
DE (2) | DE2353502A1 (en) |
GB (1) | GB1416220A (en) |
NL (1) | NL167532C (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2429475A1 (en) * | 1978-06-19 | 1980-01-18 | Siemens Ag | SEMICONDUCTOR APPARATUS FOR REPRODUCING ACOUSTIC SIGNALS |
US5268651A (en) * | 1991-09-23 | 1993-12-07 | Crystal Semiconductor Corporation | Low drift resistor structure |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5228851A (en) * | 1975-08-29 | 1977-03-04 | Nat Semiconductor Corp | Converter circuit |
US4048626A (en) * | 1975-12-29 | 1977-09-13 | Honeywell Information Systems Inc. | Memory device |
US4160244A (en) * | 1976-02-25 | 1979-07-03 | National Semiconductor Corporation | Conversion circuit |
US4219797A (en) * | 1979-03-19 | 1980-08-26 | National Semiconductor Corporation | Integrated circuit resistance ladder having curvilinear connecting segments |
US4409877A (en) * | 1979-06-11 | 1983-10-18 | Cbs, Inc. | Electronic tone generating system |
US4668932A (en) * | 1985-07-26 | 1987-05-26 | Xicor, Inc. | Nonvolatile reprogrammable electronic potentiometer |
JP3654083B2 (en) * | 1999-09-27 | 2005-06-02 | ヤマハ株式会社 | Waveform generation method and apparatus |
US6331768B1 (en) | 2000-06-13 | 2001-12-18 | Xicor, Inc. | High-resolution, high-precision solid-state potentiometer |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3721964A (en) * | 1970-02-18 | 1973-03-20 | Hewlett Packard Co | Integrated circuit read only memory bit organized in coincident select structure |
US3735367A (en) * | 1970-04-29 | 1973-05-22 | Currier Smith Corp | Electronic resistance memory |
-
1973
- 1973-10-23 US US408430A patent/US3890602A/en not_active Expired - Lifetime
- 1973-10-24 NL NL7314597.A patent/NL167532C/en not_active IP Right Cessation
- 1973-10-25 DE DE19732353502 patent/DE2353502A1/en active Pending
- 1973-10-25 DE DE19737338355U patent/DE7338355U/en not_active Expired
- 1973-10-25 GB GB4982773A patent/GB1416220A/en not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2429475A1 (en) * | 1978-06-19 | 1980-01-18 | Siemens Ag | SEMICONDUCTOR APPARATUS FOR REPRODUCING ACOUSTIC SIGNALS |
US5268651A (en) * | 1991-09-23 | 1993-12-07 | Crystal Semiconductor Corporation | Low drift resistor structure |
Also Published As
Publication number | Publication date |
---|---|
DE7338355U (en) | 1978-10-26 |
NL167532B (en) | 1981-07-16 |
NL7314597A (en) | 1974-04-29 |
NL167532C (en) | 1981-12-16 |
DE2353502A1 (en) | 1974-05-09 |
US3890602A (en) | 1975-06-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PCNP | Patent ceased through non-payment of renewal fee |