GB1402927A - Monolithic memory system - Google Patents
Monolithic memory systemInfo
- Publication number
- GB1402927A GB1402927A GB5045572A GB5045572A GB1402927A GB 1402927 A GB1402927 A GB 1402927A GB 5045572 A GB5045572 A GB 5045572A GB 5045572 A GB5045572 A GB 5045572A GB 1402927 A GB1402927 A GB 1402927A
- Authority
- GB
- United Kingdom
- Prior art keywords
- inactive state
- driver transistors
- transistor
- driver
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
- G11C11/4116—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access via separately connected emittors of said transistors or via multiple emittors, e.g. T2L, ECL
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Static Random-Access Memory (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
Abstract
1402927 Transistor memory matrix INTERNATIONAL BUSINESS MACHINES CORP 2 Nov 1972 [10 Nov 1971] 50455/72 Addition to 1334307 Heading G4C The integrated circuit memory of the parent Specification 1,334,307 is modified in that the gating means comprises, for each row, a driver transistor whose base is connected to a plurality of diodes in parallel which, in the inactive state, are reversed biased, there being a diverter circuit connected to the base of the driver transistors to prevent current flow through the driver transistors due to leakage currents in the reverse biased diodes. The description is similar to that of the parent Specification 1,344,307 except that a resistor R26 is provided to divert any leakage current flowing through transistors T101-T116, which, in the inactive state, form four parallel reverse biased diodes, away from driver transistors T20. The arrangement reduces power dissipation in the driver transistors in the inactive state. The resistor R26, which may be replaced by a transistor which is conductive when the chip is in the inactive state and non-conductive otherwise is common to all memory cell rows on a chip.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19712155802 DE2155802C3 (en) | 1971-11-10 | Monolithically integrated storage array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1402927A true GB1402927A (en) | 1975-08-13 |
Family
ID=5824694
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5045572A Expired GB1402927A (en) | 1971-11-10 | 1972-11-02 | Monolithic memory system |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5238701B2 (en) |
| FR (1) | FR2159534B2 (en) |
| GB (1) | GB1402927A (en) |
| IT (1) | IT1012520B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5831673B2 (en) * | 1979-08-22 | 1983-07-07 | 富士通株式会社 | semiconductor storage device |
| JP2021507145A (en) | 2017-12-14 | 2021-02-22 | ペルマステーリサ エス．ピー．エイ． | Dynamic vibration damping system for high-rise buildings |
-
1972
- 1972-09-25 IT IT2962572A patent/IT1012520B/en active
- 1972-10-25 JP JP10634772A patent/JPS5238701B2/ja not_active Expired
- 1972-11-02 GB GB5045572A patent/GB1402927A/en not_active Expired
- 1972-11-08 FR FR7240413A patent/FR2159534B2/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2159534B2 (en) | 1975-03-28 |
| DE2155802B2 (en) | 1975-12-18 |
| JPS4857556A (en) | 1973-08-13 |
| DE2155802A1 (en) | 1973-05-17 |
| FR2159534A2 (en) | 1973-06-22 |
| JPS5238701B2 (en) | 1977-09-30 |
| IT1012520B (en) | 1977-03-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed |