GB1388387A - Manufacture of semiconductor devices - Google Patents
Manufacture of semiconductor devicesInfo
- Publication number
- GB1388387A GB1388387A GB913671A GB913671A GB1388387A GB 1388387 A GB1388387 A GB 1388387A GB 913671 A GB913671 A GB 913671A GB 913671 A GB913671 A GB 913671A GB 1388387 A GB1388387 A GB 1388387A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- substrate
- implantation
- formation
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- 238000002513 implantation Methods 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000000637 aluminium metallisation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1388387 lon-implantation into semi-conductors SMITHS INDUSTRIES Ltd 10 April 1972 [8 April 1971] 9136/71 Heading H1K Regions in a semi-conductor substrate 6 to which ohmic contact is to be made are formed by ion-implantation both through a window in an insulating layer 8 on the substrate 6 and through the part of the layer 8 which completely surrounds the window. Monoenergetic ions are used; this gives a higher surface doping level to the peripheral part of the region. Fig. 2 shows that part of an integrated circuit which contains an IGFET T and a resistor R. Boron ions are implanted into a (100) orientated N-type silicon substrate 6. Source and drain regions 3, 4 and resistor terminal regions 3, 4 are formed by the above process, the insulating layer 8 comprising a lower layer of thermal silicon oxide and an upper layer of silicon nitride, an aluminium layer (22, not present at the stage shown) having been used as an implantation mask. The shallow extensions 11, 12 of the source and drain regions are formed in a separate gateregistered implantation step; the channel region 13 of the resistor may be formed at the same time or at an earlier stage. The aluminium metallization used to form the gate electrode 9 and connections 14 is taken over thick silicon oxide walls 16 between devices to avoid the formation of parasitic channels. The many integrated circuits formed on the substrate are tested, separated and mounted on headers. Since the first process is the formation of insulating layer 8 and since it remains throughout the process and in the completed device, the structure is usefully tested for faults (such as pinholes) immediately after the formation of the layer 8.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB913671A GB1388387A (en) | 1971-04-08 | 1971-04-08 | Manufacture of semiconductor devices |
| IT49460/72A IT952552B (en) | 1971-04-08 | 1972-04-07 | IMPROVEMENT IN PROCEDURES FOR THE PRODUCTION OF SEMICONDUCTOR DEVICES |
| FR7212329A FR2132778A1 (en) | 1971-04-08 | 1972-04-07 | |
| DE19722217121 DE2217121A1 (en) | 1971-04-08 | 1972-04-10 | Process for the production of semiconductor components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB913671A GB1388387A (en) | 1971-04-08 | 1971-04-08 | Manufacture of semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1388387A true GB1388387A (en) | 1975-03-26 |
Family
ID=9866068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB913671A Expired GB1388387A (en) | 1971-04-08 | 1971-04-08 | Manufacture of semiconductor devices |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE2217121A1 (en) |
| FR (1) | FR2132778A1 (en) |
| GB (1) | GB1388387A (en) |
| IT (1) | IT952552B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2183905A (en) * | 1985-11-18 | 1987-06-10 | Plessey Co Plc | Semiconductor device manufacture |
-
1971
- 1971-04-08 GB GB913671A patent/GB1388387A/en not_active Expired
-
1972
- 1972-04-07 FR FR7212329A patent/FR2132778A1/fr not_active Withdrawn
- 1972-04-07 IT IT49460/72A patent/IT952552B/en active
- 1972-04-10 DE DE19722217121 patent/DE2217121A1/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2183905A (en) * | 1985-11-18 | 1987-06-10 | Plessey Co Plc | Semiconductor device manufacture |
| GB2183905B (en) * | 1985-11-18 | 1989-10-04 | Plessey Co Plc | Method of semiconductor device manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2217121A1 (en) | 1972-11-02 |
| FR2132778A1 (en) | 1972-11-24 |
| IT952552B (en) | 1973-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |