GB1385149A - Inverter circuits - Google Patents

Inverter circuits

Info

Publication number
GB1385149A
GB1385149A GB3479073A GB3479073A GB1385149A GB 1385149 A GB1385149 A GB 1385149A GB 3479073 A GB3479073 A GB 3479073A GB 3479073 A GB3479073 A GB 3479073A GB 1385149 A GB1385149 A GB 1385149A
Authority
GB
United Kingdom
Prior art keywords
fets
potential
rapidly
charges
branch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3479073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1385149A publication Critical patent/GB1385149A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Static Random-Access Memory (AREA)
  • Logic Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

1385149 Inverters INTERNATIONAL BUSINESS MACHINES CORP 20 July 1973 [6 Sept 1972] 34790/73 Heading H3T An inverter such as is suitable for use in decoders or driver circuits for memory storage cells comprises two parallel branches each consisting of a series connection of an active circuit element T 1 or T 1 <SP>1</SP> with a controllable resistive element T 2 or T 2 <SP>1</SP>, a feed-back path C 2 between the commoned control electrodes of T 2 , T 2 <SP>1</SP> and a junction point S<SP>1</SP> in one branch, the control electrodes of T 1 , T 1 <SP>1</SP> being connected to a common input terminal and the junction point S in the other branch being for connection to a capacitive load C L . In operation, an application of a positive pulse at input I turns on FETs T 1 , T 1 <SP>1</SP> so that the load C L is rapidly discharged to earth potential via T 1 and points S, S<SP>1</SP> attain this low potential. Subsequently T 1 , T 1 <SP>1</SP> are turned off and as the gate G of T 2 is maintained positive by a diode connected FET T 3 , C L charges up via T 2 . As the stray capacitance at S<SP>1</SP> is less than C L present at S, the potential at S<SP>1</SP> increases faster than at S and due to feed-back via C 2 the potentials at points G, S also increase rapidly and C L charges up very rapidly to the supply potential V D . The diode connected transistor T 3 may be connected to a separate drain supply which can be lowered by switching to block FETs T 2 , T 2 <SP>1</SP> when FETs T 1 , T 1 <SP>1</SP> are conductive.
GB3479073A 1972-09-06 1973-07-20 Inverter circuits Expired GB1385149A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722243671 DE2243671A1 (en) 1972-09-06 1972-09-06 MONOLITHICALLY INTEGRATED INVERTERING

Publications (1)

Publication Number Publication Date
GB1385149A true GB1385149A (en) 1975-02-26

Family

ID=5855576

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3479073A Expired GB1385149A (en) 1972-09-06 1973-07-20 Inverter circuits

Country Status (5)

Country Link
JP (1) JPS4966040A (en)
DE (1) DE2243671A1 (en)
FR (1) FR2198319B1 (en)
GB (1) GB1385149A (en)
IT (1) IT993603B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1480984A (en) * 1975-09-25 1977-07-27 Standard Telephones Cables Ltd Schmitt trigger circuit
DE2929383A1 (en) * 1979-07-20 1981-02-12 Ibm Deutschland CIRCUIT FOR THE VOLTAGE LEVEL CONVERSION AND RELATED METHOD
US4354123A (en) * 1979-08-13 1982-10-12 Mostek Corporation High voltage clock generator
DE2935465A1 (en) * 1979-09-01 1981-03-19 Ibm Deutschland Gmbh, 7000 Stuttgart TTL LEVEL CONVERTER FOR CONTROLLING FIELD EFFECT TRANSISTORS
JPS59172832A (en) * 1983-03-23 1984-09-29 Fujitsu Ltd Low impedance output circuit
JP5665299B2 (en) * 2008-10-31 2015-02-04 三菱電機株式会社 Shift register circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710271A (en) * 1971-10-12 1973-01-09 United Aircraft Corp Fet driver for capacitive loads

Also Published As

Publication number Publication date
DE2243671A1 (en) 1974-03-28
FR2198319B1 (en) 1976-05-07
IT993603B (en) 1975-09-30
FR2198319A1 (en) 1974-03-29
JPS4966040A (en) 1974-06-26

Similar Documents

Publication Publication Date Title
US3521242A (en) Complementary transistor write and ndro for memory cell
US4176289A (en) Driving circuit for integrated circuit semiconductor memory
GB1113111A (en) Digital storage devices
US3806738A (en) Field effect transistor push-pull driver
GB1215698A (en) Mos field-effect transistor amplifier using capacitive feedback
US3618053A (en) Trapped charge memory cell
GB1196997A (en) Digital Memory Cell
KR880001109A (en) Integrated Logic Circuit
GB1473568A (en) Mos control circuit
GB1125218A (en) Field effect transistor circuits
GB1423726A (en) Gate and store circuit
US3619670A (en) Elimination of high valued {37 p{38 {0 resistors from mos lsi circuits
GB1436439A (en) Semiconductor memory cell
GB1129880A (en) Field effect switching circuit
GB1444237A (en) Field effect transistor circuit
GB1330679A (en) Tri-level voltage generator circuit
GB1385149A (en) Inverter circuits
GB1418083A (en) Logic circuit arrangement using insulated gate field effect transistors
SE328909B (en)
KR850003046A (en) Dynamic memory
ES470267A1 (en) Capacitor memory with an amplified cell signal
GB1526419A (en) Static storage elements for electronic data stores
GB1453708A (en) Driver pulse circuit
GB1466195A (en) Transistor latch circuit
GB1241746A (en) Buffer circuit for gating circuits

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees