GB1384818A - Electrical capacitive storage cells - Google Patents
Electrical capacitive storage cellsInfo
- Publication number
- GB1384818A GB1384818A GB4322272A GB4322272A GB1384818A GB 1384818 A GB1384818 A GB 1384818A GB 4322272 A GB4322272 A GB 4322272A GB 4322272 A GB4322272 A GB 4322272A GB 1384818 A GB1384818 A GB 1384818A
- Authority
- GB
- United Kingdom
- Prior art keywords
- cells
- cell
- substrate
- gate
- bias
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 210000000352 storage cell Anatomy 0.000 title abstract 3
- 210000004027 cell Anatomy 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 210000003771 C cell Anatomy 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors with potential-jump barrier or surface barrier
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Abstract
1384818 Semi-conductor devices PLESSEY CO Ltd 8 Aug 1973 [18 Sept 1972] 43222/72 Heading H1K A plurality of capacitative storage cells are formed in a substrate 1 of a given conductivity type by diffused regions 2 of the opposite conductivity type and overlying capacitative electrodes 5. A magnetic field or an electric field if applied to the substrate to provide a bias such that minority carriers injected from one diffusion move to a particular neighbouring diffusion. The arrangement shown is a shift register (which in practice would have more storage cells) in which the bias is provided by a voltage source connected across contacts 7, 8. Information fed to one of the terminals 6 is shifted by clock pulses applied alternately to electrodes 5 such that when the potential applied to an electrode 5 is high and stored information is non-zero the corresponding PN junction 3 becomes forward biased and injects carriers in a number equivalent to the stored information into the substrate and these move in the bias field to be collected by the next diffusion, the electrode 5 of which is at that time at low potential. Losses in the substrate are reduced by the carrierreflecting NN<+> junction. The stored information, which may be in digital or analogue form, appears at the other terminal 6 and may be presented in electrical or optical form. Radiation could instead be used to supply the input information. Systems employing 3 clock pulse sources could replace the two pulse systems described, and a rectangular matrix of cells could use two electric fields, or one electric and one magnetic, to provide the perpendicular biases for the rows and columns. Fig. 5 shows a schematic arrangement for logic circuitry with three "first" cells A and a single "final" cell C. Stored charge from the A cells may be moved simultaneously or sequentially to the C cell. The logic operation performed depends on the relative capacitances of the cells. If all four cells are equivalent, the device is a 3 input OR gate; if cell C has twice the capacitance of each A cell the device is a 2-out-of-3-gate; and if cell C has three times the capacitance of each A cell, the device is an AND gate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4322272A GB1384818A (en) | 1972-09-18 | 1972-09-18 | Electrical capacitive storage cells |
| HK153/76*UA HK15376A (en) | 1972-09-18 | 1976-03-18 | Electrical capacitive storage cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4322272A GB1384818A (en) | 1972-09-18 | 1972-09-18 | Electrical capacitive storage cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1384818A true GB1384818A (en) | 1975-02-26 |
Family
ID=10427808
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4322272A Expired GB1384818A (en) | 1972-09-18 | 1972-09-18 | Electrical capacitive storage cells |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB1384818A (en) |
| HK (1) | HK15376A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2496343A1 (en) * | 1980-12-12 | 1982-06-18 | Clarion Co Ltd | VARIABLE CAPACITOR |
-
1972
- 1972-09-18 GB GB4322272A patent/GB1384818A/en not_active Expired
-
1976
- 1976-03-18 HK HK153/76*UA patent/HK15376A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2496343A1 (en) * | 1980-12-12 | 1982-06-18 | Clarion Co Ltd | VARIABLE CAPACITOR |
Also Published As
| Publication number | Publication date |
|---|---|
| HK15376A (en) | 1976-03-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |