GB1378568A - Memory arrangements - Google Patents
Memory arrangementsInfo
- Publication number
- GB1378568A GB1378568A GB2354972A GB2354972A GB1378568A GB 1378568 A GB1378568 A GB 1378568A GB 2354972 A GB2354972 A GB 2354972A GB 2354972 A GB2354972 A GB 2354972A GB 1378568 A GB1378568 A GB 1378568A
- Authority
- GB
- United Kingdom
- Prior art keywords
- capacitor
- charge
- terminal
- gate
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colourĀ
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colourĀ based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
1378568 Capacitor stores MARCONI CO Ltd 28 Feb 1973 [19 May 1972] 23549/72 Heading G4C [Also in Division H1] A store comprises a capacitor with liquid crystal material between the electrodes. Means is provided to charge the capacitor according to a data input signal, to read out the charge, and to erase the charge. A capacitor comprising electrodes 2, 4, Fig. 2, is charged by data on terminal 15 when terminal 17 of a MOST gate 13 is made positive. The charge is read out to terminal 30 by applying a positive read pulse to dual gate MOST gate 24. Charge on the capacitor may be erased by applying a negative potential to electrode 2 on opening MOST gate 22 or by applying an alternating potential to terminal 35. The "store may comprise a plurality of such capacitors, one electrode being common to each capacitor. The common electrode is formed by evaporating tin-oxide on to a glass substrate, and the other electrodes by evaporating aluminium, magnesium or tantalum on to a glass substrate.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2354972A GB1378568A (en) | 1972-05-19 | 1972-05-19 | Memory arrangements |
DE19732325379 DE2325379A1 (en) | 1972-05-19 | 1973-05-18 | STORAGE DEVICE |
FR7318227A FR2185834B1 (en) | 1972-05-19 | 1973-05-18 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB2354972A GB1378568A (en) | 1972-05-19 | 1972-05-19 | Memory arrangements |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1378568A true GB1378568A (en) | 1974-12-27 |
Family
ID=10197457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2354972A Expired GB1378568A (en) | 1972-05-19 | 1972-05-19 | Memory arrangements |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE2325379A1 (en) |
FR (1) | FR2185834B1 (en) |
GB (1) | GB1378568A (en) |
-
1972
- 1972-05-19 GB GB2354972A patent/GB1378568A/en not_active Expired
-
1973
- 1973-05-18 FR FR7318227A patent/FR2185834B1/fr not_active Expired
- 1973-05-18 DE DE19732325379 patent/DE2325379A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2325379A1 (en) | 1973-11-22 |
FR2185834B1 (en) | 1976-09-17 |
FR2185834A1 (en) | 1974-01-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |