GB1373119A - Magnetic devices - Google Patents

Magnetic devices

Info

Publication number
GB1373119A
GB1373119A GB5312571A GB5312571A GB1373119A GB 1373119 A GB1373119 A GB 1373119A GB 5312571 A GB5312571 A GB 5312571A GB 5312571 A GB5312571 A GB 5312571A GB 1373119 A GB1373119 A GB 1373119A
Authority
GB
United Kingdom
Prior art keywords
domain
transfer
field
pattern
movement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5312571A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US00193976A external-priority patent/US3837911A/en
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1373119A publication Critical patent/GB1373119A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/02Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/26Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on ferrites
    • C04B35/2675Other ferrites containing rare earth metals, e.g. rare earth ferrite garnets
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Thin Magnetic Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1373119 Magnetic storage arrangements WESTERN ELECTRIC CO Inc 16 Nov 1971 [16 Nov 1970 12 April 1971 29 Oct 1971] 53125/71 Heading H3B [Also in Division B1] A garnet substrate on which a garnet layer is grown by liquid phase epitaxial deposition (see Division B1) is used in magnetic devices in particular in "bubble" devices for switching, memory and logic functions. Such devices are shown in Figs. 1 and 2. Fig. 1 shows an arrangement 10 including a sheet or slice 11 of material in which single wall domains can be moved by bar and T-shaped segments and the reorienting in-plane field rotates clockwise in the plane of sheet 11 as viewed. The reorienting field is represented by block 12 and may comprise mutually orthogonal coil pairs (not shown) driven in quadrature. Only closed "information" loops are shown. The movement of domain patterns simultaneously in all the registers represented by loops is synchronized by the in-plane field source 12. Each rotation of the inplane field advances a next consecutive bit to location 13 in each register. The movement of bits in the vertical channel is synchronized with this movement. In normal operation the horizontal channels are occupied by domain patterns and the vertical channel is unoccupied. For read or write operations the domain pattern is transferred to the vertical loop and the locus of the transfer function is indicated by broken loop T encompassing the vertical channel. Transfer is under the control of a transfer circuit 14 which may include a shift register tracking circuit for controlling the transfer of a selected word from memory. A read or a write operation is responsive to signals under the control of control circuit 16. The termination of either a write or a read operation terminates in the transfer of a pattern of domains to the horizontal channel. Fig. 2 shows a portion of an overlay pattern defining a representative horizontal channel in which a domain is moved. The overlay pattern contains repetitive segments. When the field is initially in an orientation as indicated by arrow H, one cycle of the field comprises four phases which moves a domain consecutively to the positions designated by the encircled numerals 1, 2, 3 and 4. The domain patterns in the channels correspond to the repeat pattern of the overlay. Entire domain patterns representing consecutive binary words accordingly move consecutively to positions 13. A domain in position 4 is accordingly ready to begin its transfer cycle.
GB5312571A 1970-11-16 1971-11-16 Magnetic devices Expired GB1373119A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8963270A 1970-11-16 1970-11-16
US13336171A 1971-04-12 1971-04-12
US00193976A US3837911A (en) 1971-04-12 1971-10-29 Magnetic devices utilizing garnet epitaxial materials and method of production

Publications (1)

Publication Number Publication Date
GB1373119A true GB1373119A (en) 1974-11-06

Family

ID=27376328

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5312571A Expired GB1373119A (en) 1970-11-16 1971-11-16 Magnetic devices

Country Status (9)

Country Link
JP (1) JPS522120B1 (en)
BE (1) BE775382A (en)
CA (1) CA953191A (en)
DE (1) DE2156917C3 (en)
FR (1) FR2114774A5 (en)
GB (1) GB1373119A (en)
IT (1) IT951700B (en)
NL (1) NL152102B (en)
SE (1) SE380665B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114805073A (en) * 2022-05-16 2022-07-29 上海蕙黔化工科技有限公司 Catalytic hydrogenation equipment for gas-phase carbonyl synthesis dimethyl carbonate process

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2349348C2 (en) * 1972-10-07 1983-02-10 N.V. Philips' Gloeilampenfabrieken, 5621 Eindhoven Process for growing a monocrystalline, bismuth-doped yttrium or rare earth metal-iron garnet layer
DE3434631A1 (en) * 1984-09-21 1986-04-03 Philips Patentverwaltung Gmbh, 2000 Hamburg PLANAR OPTICAL WAVE GUIDE AND METHOD FOR THE PRODUCTION THEREOF

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114805073A (en) * 2022-05-16 2022-07-29 上海蕙黔化工科技有限公司 Catalytic hydrogenation equipment for gas-phase carbonyl synthesis dimethyl carbonate process
CN114805073B (en) * 2022-05-16 2024-03-12 上海蕙黔新材料科技有限公司 Catalytic hydrogenation equipment for gas-phase oxo-synthesis process of dimethyl carbonate

Also Published As

Publication number Publication date
DE2156917B2 (en) 1973-09-27
NL7115765A (en) 1972-05-18
DE2156917C3 (en) 1974-05-02
DE2156917A1 (en) 1972-05-31
IT951700B (en) 1973-07-10
CA953191A (en) 1974-08-20
NL152102B (en) 1977-01-17
JPS522120B1 (en) 1977-01-19
BE775382A (en) 1972-03-16
FR2114774A5 (en) 1972-06-30
SE380665B (en) 1975-11-10

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee