GB1370988A - Production of tubes of semiconductor material closed at one end - Google Patents
Production of tubes of semiconductor material closed at one endInfo
- Publication number
- GB1370988A GB1370988A GB5003472A GB5003472A GB1370988A GB 1370988 A GB1370988 A GB 1370988A GB 5003472 A GB5003472 A GB 5003472A GB 5003472 A GB5003472 A GB 5003472A GB 1370988 A GB1370988 A GB 1370988A
- Authority
- GB
- United Kingdom
- Prior art keywords
- tubes
- production
- semiconductor material
- material closed
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/073—Hollow body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2158257A DE2158257A1 (de) | 1971-11-24 | 1971-11-24 | Anordnung zum herstellen von einseitig geschlossenen rohren aus halbleitermaterial |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1370988A true GB1370988A (en) | 1974-10-23 |
Family
ID=5826011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5003472A Expired GB1370988A (en) | 1971-11-24 | 1972-10-31 | Production of tubes of semiconductor material closed at one end |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US3793984A (enExample) |
| JP (1) | JPS5743526B2 (enExample) |
| AT (1) | AT324434B (enExample) |
| BE (1) | BE787577R (enExample) |
| CH (1) | CH550609A (enExample) |
| DD (1) | DD105727A6 (enExample) |
| DE (1) | DE2158257A1 (enExample) |
| DK (1) | DK141557C (enExample) |
| FR (1) | FR2160903B2 (enExample) |
| GB (1) | GB1370988A (enExample) |
| IT (1) | IT1046828B (enExample) |
| NL (1) | NL7212471A (enExample) |
| SE (1) | SE375555B (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5478787A (en) * | 1991-12-26 | 1995-12-26 | Uop | Discrete molecular sieve and use |
| US5453233A (en) * | 1993-04-05 | 1995-09-26 | Cvd, Inc. | Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique |
| EP1014455B1 (en) | 1997-07-25 | 2006-07-12 | Nichia Corporation | Nitride semiconductor device |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| DE60043536D1 (de) * | 1999-03-04 | 2010-01-28 | Nichia Corp | Nitridhalbleiterlaserelement |
| TWI362769B (en) * | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB450959A (en) * | 1934-10-22 | 1936-07-22 | Robert Calvert Knight Young | Electric resistance heaters |
| US2271838A (en) * | 1939-11-06 | 1942-02-03 | Dow Chemical Co | Electric furnace resistor element |
| US2355343A (en) * | 1941-07-23 | 1944-08-08 | Ind De L Aluminum Sa | Furnace for the electrothermal production of magnesium |
| US2858403A (en) * | 1956-04-23 | 1958-10-28 | Carborundum Co | Silicon carbide immersion heating device |
| US2955566A (en) * | 1957-04-16 | 1960-10-11 | Chilean Nitrate Sales Corp | Dissociation-deposition unit for the production of chromium |
| GB944009A (en) * | 1960-01-04 | 1963-12-11 | Texas Instruments Ltd | Improvements in or relating to the deposition of silicon on a tantalum article |
| US3451772A (en) * | 1967-06-14 | 1969-06-24 | Air Reduction | Production of ultrapure titanium nitride refractory articles |
| US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
-
1971
- 1971-11-24 DE DE2158257A patent/DE2158257A1/de active Pending
-
1972
- 1972-08-14 BE BE787577A patent/BE787577R/xx active
- 1972-09-14 NL NL7212471A patent/NL7212471A/xx unknown
- 1972-10-02 AT AT843372A patent/AT324434B/de not_active IP Right Cessation
- 1972-10-03 CH CH1440472A patent/CH550609A/xx unknown
- 1972-10-31 GB GB5003472A patent/GB1370988A/en not_active Expired
- 1972-11-10 JP JP47112844A patent/JPS5743526B2/ja not_active Expired
- 1972-11-13 US US00306011A patent/US3793984A/en not_active Expired - Lifetime
- 1972-11-14 DK DK564772A patent/DK141557C/da active
- 1972-11-17 SE SE7215010A patent/SE375555B/xx unknown
- 1972-11-21 IT IT31886/72A patent/IT1046828B/it active
- 1972-11-21 FR FR7241300A patent/FR2160903B2/fr not_active Expired
- 1972-11-22 DD DD167018A patent/DD105727A6/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IT1046828B (it) | 1980-07-31 |
| NL7212471A (enExample) | 1973-05-28 |
| DE2158257A1 (de) | 1973-05-30 |
| FR2160903B2 (enExample) | 1976-08-20 |
| JPS4863976A (enExample) | 1973-09-05 |
| DD105727A6 (enExample) | 1974-05-12 |
| BE787577R (fr) | 1972-12-01 |
| JPS5743526B2 (enExample) | 1982-09-16 |
| DK141557B (da) | 1980-04-21 |
| FR2160903A2 (enExample) | 1973-07-06 |
| DK141557C (da) | 1980-09-08 |
| AT324434B (de) | 1975-08-25 |
| US3793984A (en) | 1974-02-26 |
| SE375555B (enExample) | 1975-04-21 |
| CH550609A (de) | 1974-06-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |