GB1364288A - Method and apparatus for recording and retrieving information - Google Patents

Method and apparatus for recording and retrieving information

Info

Publication number
GB1364288A
GB1364288A GB3657871A GB3657871A GB1364288A GB 1364288 A GB1364288 A GB 1364288A GB 3657871 A GB3657871 A GB 3657871A GB 3657871 A GB3657871 A GB 3657871A GB 1364288 A GB1364288 A GB 1364288A
Authority
GB
United Kingdom
Prior art keywords
catalyst
memory material
layer
memory
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3657871A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of GB1364288A publication Critical patent/GB1364288A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/705—Compositions containing chalcogenides, metals or alloys thereof, as photosensitive substances, e.g. photodope systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)

Abstract

1364288 Data store ENERGY CONVERSION DEVICES Inc 4 Aug 1971 [13 Aug 1970] 36578/71 Heading G4C [Also in Divisions H1 and B6] An Ovonic record of retrievable data is made using a layer of material having two structural conditions, a detectable characteristic whose value is different in the two conditions, and internal biasing forces towards one structural condition and internal inhibitions against the action of the biasing forces, and a catalyst which is capable of changing the biasing forces and/or the inhibitions against those forces by actuating the catalyst in desired regions of the material in order to change the structural condition of those portions thereby to record the data. The memory material is such as to exhibit the ovshinsky effect by being reversibly changeable between a generally disordered amorphous state and a more ordered crystalline state by the application of energy, the two states exhibiting widely different values of at least one physical characteristic, e.g. electrical resistance. Other possible structural conditions are mentioned and the Specification gives a large number of examples of a suitable material. The effect of the catalyst, which may for example be iodine, is to reduce (or increase) the energy required to cause a change of structure. Numerous embodiments are described. Briefly the memory may consist of the memory material 11 deposited on a glass substrate and covered by a mask 12 having openings 13 at selected positions. The memory material is then exposed to iodine vapour through the mask and the structure is heated to cause structure changes where the layer 11 is exposed to the iodine vapour. The mask is then removed and the stored information retrieved using light beams which are dispersed only by the altered regions 14. In a modification of this embodiment the iodine vapour is trapped in contact with the memory material selected regions of which are irradiated with light so as to actuate the catalyst in these regions. The data may be erased by a pulse of energy to evaporate the catalyst followed by rapid cooling to freeze the new structure. In a further embodiment the catalyst is a material which dissociates when irradiated formed in a layer on the memory material. This layer may be on top of the memory material or between it and the substrate. Several electrical embodiments are described, e.g. see Fig. 9. As shown an electrode 26 which includes a catalyst is deposited between the memory layer 27 and substrate 25. Various voltages are applied by means of switches 30, 34, 38 to an electrode 28 to read, write and erase data stored in the memory material. The electrode 28 may be transparent so that recording, &c. may be by means of a combination of light 40 and/or the applied voltages. In another embodiment a system is described briefly for recording etc. using a scanning light beam. In two further embodiments, Figs. 20, 21 (not shown), a printing system is described. The memory material is wrapped around a rotating drum and charge is applied to the drum so that, due to the different resistance of the two structural conditions a charge pattern is built up on the drum. Ink particles are attracted to the charged portions and may by contact, be transferred to a carrier on which they are fixed by heat. The fact that the two structural conditions are wetted to different degrees may be used in printing by applying a pigment to the surface. Parts of the surface retain the pigment and parts do not and the pigment is transferred to a carrier again by contact.
GB3657871A 1970-08-13 1971-08-04 Method and apparatus for recording and retrieving information Expired GB1364288A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6340470A 1970-08-13 1970-08-13

Publications (1)

Publication Number Publication Date
GB1364288A true GB1364288A (en) 1974-08-21

Family

ID=22048972

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3657871A Expired GB1364288A (en) 1970-08-13 1971-08-04 Method and apparatus for recording and retrieving information

Country Status (6)

Country Link
JP (1) JPS5441902B1 (en)
CH (1) CH534410A (en)
FR (1) FR2103896A5 (en)
GB (1) GB1364288A (en)
NL (1) NL7110881A (en)
ZA (1) ZA715197B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1636825A2 (en) * 2003-03-10 2006-03-22 Energy Conversion Devices, Inc. Multi-terminal chalcogenide switching devices

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2248054B2 (en) * 1972-09-30 1974-12-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Electrophotographic recording material
DE2441263A1 (en) * 1974-08-28 1976-03-18 Philips Patentverwaltung RECORDING PROCEDURES
FR2460205A1 (en) * 1979-07-03 1981-01-23 Inst Elektrodinamiki Akademii Radiation-sensitive recording material - with a metallic layer e.g. of copper or silver and an inorganic layer of arsenic, antimony or bismuth chalcogenide, with an intermediate s

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1636825A2 (en) * 2003-03-10 2006-03-22 Energy Conversion Devices, Inc. Multi-terminal chalcogenide switching devices
EP1636825B1 (en) * 2003-03-10 2013-04-10 Energy Conversion Devices, Inc. Multi-terminal chalcogenide switching devices

Also Published As

Publication number Publication date
JPS5441902B1 (en) 1979-12-11
NL7110881A (en) 1972-02-15
AU3197271A (en) 1973-02-08
CH534410A (en) 1973-02-28
ZA715197B (en) 1972-07-26
FR2103896A5 (en) 1972-04-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years